DE2850805C2 - - Google Patents

Info

Publication number
DE2850805C2
DE2850805C2 DE2850805A DE2850805A DE2850805C2 DE 2850805 C2 DE2850805 C2 DE 2850805C2 DE 2850805 A DE2850805 A DE 2850805A DE 2850805 A DE2850805 A DE 2850805A DE 2850805 C2 DE2850805 C2 DE 2850805C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2850805A
Other versions
DE2850805A1 (de
Inventor
Josef Dipl.-Phys. Dr.Rer.Nat. 8131 Berg De Grabmaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2850805A priority Critical patent/DE2850805C2/de
Publication of DE2850805A1 publication Critical patent/DE2850805A1/de
Application granted granted Critical
Publication of DE2850805C2 publication Critical patent/DE2850805C2/de
Application status is Expired legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007Pulling on a substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06Non-vertical pulling
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
DE2850805A 1978-11-23 1978-11-23 Expired DE2850805C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE2850805A DE2850805C2 (de) 1978-11-23 1978-11-23

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE2850805A DE2850805C2 (de) 1978-11-23 1978-11-23
US06/092,637 US4305776A (en) 1978-11-23 1979-11-08 Method for producing disc or band-shaped SI crystals with columnar structure for solar cells
JP54151919A JPS6228119B2 (de) 1978-11-23 1979-11-22

Publications (2)

Publication Number Publication Date
DE2850805A1 DE2850805A1 (de) 1980-06-12
DE2850805C2 true DE2850805C2 (de) 1986-08-28

Family

ID=6055419

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2850805A Expired DE2850805C2 (de) 1978-11-23 1978-11-23

Country Status (3)

Country Link
US (1) US4305776A (de)
JP (1) JPS6228119B2 (de)
DE (1) DE2850805C2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3736341A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen durch horizontales ziehen aus der schmelze

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2059292A (en) * 1979-09-28 1981-04-23 Honeywell Inc Growing silicon films on substrates
DE3010557C2 (de) * 1980-03-19 1986-08-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
DE3017842A1 (de) * 1980-05-09 1981-11-12 Siemens Ag Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktor gleichwertigen saeulenstruktur durch sintern
DE3017923A1 (de) * 1980-05-09 1981-11-12 Siemens Ag Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern
DE3107596A1 (de) * 1981-02-27 1982-10-21 Heliotronic Gmbh "verfahren zur herstellung von halbleiterscheiben"
AU8670782A (en) * 1981-08-17 1983-02-24 Semix, Inc. Semicrystalline silicon sheets
US4778478A (en) * 1981-11-16 1988-10-18 University Of Delaware Method of making thin film photovoltaic solar cell
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
JPH089520B2 (ja) * 1983-05-25 1996-01-31 宇宙開発事業団 薄膜単結晶の製造方法
DE3338335A1 (de) * 1983-10-21 1985-05-09 Siemens Ag Verfahren zum herstellen von grossflaechigen siliziumkristallkoerpern fuer solarzellen
EP0158181B1 (de) * 1984-04-09 1987-09-16 Siemens Aktiengesellschaft Verfahren zum Herstellen von rissfreien, grossflächigen Siliziumkristallkörpern für Solarzellen
US4554203A (en) * 1984-04-09 1985-11-19 Siemens Aktiengesellschaft Method for manufacturing large surface silicon crystal bodies for solar cells, and bodies so produced
US4599244A (en) * 1984-07-11 1986-07-08 Siemens Aktiengesellschaft Method large-area silicon bodies
EP0170119B1 (de) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung
US4643797A (en) * 1984-08-28 1987-02-17 Siemens Aktiengesellschaft Method for the manufacture of large area silicon crystal bodies for solar cells
DE3520067A1 (de) * 1985-06-04 1986-12-04 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
US4677250A (en) * 1985-10-30 1987-06-30 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell
US4781766A (en) * 1985-10-30 1988-11-01 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell and method
US4772564A (en) * 1985-10-30 1988-09-20 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell fabrication process
JPS62291977A (en) * 1986-06-06 1987-12-18 Siemens Ag Method and apparatus for cutting silicon plate for solar battery
JP3656821B2 (ja) * 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
NL1030285C2 (nl) * 2005-10-27 2007-05-01 Rgs Dev B V Werkwijze en inrichting voor het fabriceren van metalen folies met een patroon.
DE102010026289B4 (de) * 2010-07-06 2014-10-30 Sameday Media Gmbh Solarzelle und Verfahren
CN104726932B (zh) * 2015-04-09 2017-06-06 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341361A (en) * 1963-02-21 1967-09-12 Union Carbide Corp Process for providing a silicon sheet
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen, De
DE2621145C3 (de) * 1976-05-13 1978-11-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen
US4169739A (en) * 1978-04-12 1979-10-02 Semix, Incorporated Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3736341A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen durch horizontales ziehen aus der schmelze

Also Published As

Publication number Publication date
DE2850805A1 (de) 1980-06-12
JPS5573450A (en) 1980-06-03
JPS6228119B2 (de) 1987-06-18
US4305776A (en) 1981-12-15

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OAR Request for search filed
OC Search report available
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee