FR2552265B1 - Procede de formation d'une jonction pn - Google Patents

Procede de formation d'une jonction pn

Info

Publication number
FR2552265B1
FR2552265B1 FR848414336A FR8414336A FR2552265B1 FR 2552265 B1 FR2552265 B1 FR 2552265B1 FR 848414336 A FR848414336 A FR 848414336A FR 8414336 A FR8414336 A FR 8414336A FR 2552265 B1 FR2552265 B1 FR 2552265B1
Authority
FR
France
Prior art keywords
junction
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR848414336A
Other languages
English (en)
Other versions
FR2552265A1 (fr
Inventor
Haruo Itoh
Tadashi Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2552265A1 publication Critical patent/FR2552265A1/fr
Application granted granted Critical
Publication of FR2552265B1 publication Critical patent/FR2552265B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
FR848414336A 1983-09-21 1984-09-19 Procede de formation d'une jonction pn Expired - Lifetime FR2552265B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172987A JPS6065528A (ja) 1983-09-21 1983-09-21 ｐｎ接合形成法

Publications (2)

Publication Number Publication Date
FR2552265A1 FR2552265A1 (fr) 1985-03-22
FR2552265B1 true FR2552265B1 (fr) 1990-02-02

Family

ID=15952071

Family Applications (1)

Application Number Title Priority Date Filing Date
FR848414336A Expired - Lifetime FR2552265B1 (fr) 1983-09-21 1984-09-19 Procede de formation d'une jonction pn

Country Status (3)

Country Link
JP (1) JPS6065528A (fr)
DE (1) DE3434552A1 (fr)
FR (1) FR2552265B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
US6982215B1 (en) * 1998-11-05 2006-01-03 Chartered Semiconductor Manufacturing Ltd. N type impurity doping using implantation of P2+ ions or As2+ Ions
KR101832230B1 (ko) 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915377B1 (fr) * 1968-10-04 1974-04-15

Also Published As

Publication number Publication date
DE3434552C2 (fr) 1989-10-19
FR2552265A1 (fr) 1985-03-22
DE3434552A1 (de) 1985-04-11
JPS6065528A (ja) 1985-04-15

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