FR2508237B1 - Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephson - Google Patents
Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephsonInfo
- Publication number
- FR2508237B1 FR2508237B1 FR8211126A FR8211126A FR2508237B1 FR 2508237 B1 FR2508237 B1 FR 2508237B1 FR 8211126 A FR8211126 A FR 8211126A FR 8211126 A FR8211126 A FR 8211126A FR 2508237 B1 FR2508237 B1 FR 2508237B1
- Authority
- FR
- France
- Prior art keywords
- josephson junction
- manufacture
- tunnel
- junction
- josephson
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/80—Material per se process of making same
- Y10S505/815—Process of making per se
- Y10S505/816—Sputtering, including coating, forming, or etching
- Y10S505/817—Sputtering, including coating, forming, or etching forming josephson element
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56096129A JPS57211286A (en) | 1981-06-22 | 1981-06-22 | Manufacture of josephson junction element |
JP56105345A JPS587890A (ja) | 1981-07-06 | 1981-07-06 | トンネル形ジヨセフソン接合素子の製造方法 |
JP56121577A JPS5821881A (ja) | 1981-08-03 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
JP56121578A JPS5821882A (ja) | 1981-08-03 | 1981-08-03 | トンネル形ジヨセフソン接合素子の製造方法 |
JP56128439A JPS5830178A (ja) | 1981-08-17 | 1981-08-17 | トンネル形ジヨセフソン接合素子の製造方法 |
JP57024194A JPS58140172A (ja) | 1982-02-16 | 1982-02-16 | トンネル形ジヨセフソン接合素子の製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2508237A1 FR2508237A1 (fr) | 1982-12-24 |
FR2508237B1 true FR2508237B1 (fr) | 1986-08-08 |
Family
ID=27549155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8211126A Expired FR2508237B1 (fr) | 1981-06-22 | 1982-06-22 | Procede pour la fabrication d'une jonction de josephson, notamment d'une jonction tunnel de josephson |
Country Status (4)
Country | Link |
---|---|
US (1) | US4412902A (fr) |
CA (1) | CA1168762A (fr) |
FR (1) | FR2508237B1 (fr) |
NL (1) | NL190858C (fr) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608296A (en) * | 1983-12-06 | 1986-08-26 | Energy Conversion Devices, Inc. | Superconducting films and devices exhibiting AC to DC conversion |
US4719120A (en) * | 1986-09-29 | 1988-01-12 | The United States Of America As Represented By The Secretary Of The Navy | Detection of oxygen in thin films |
US4929594A (en) * | 1988-03-14 | 1990-05-29 | E. I. Du Pont De Nemours And Company | Superconducting composition Tl2 Ba2 CuO6+x and process for manufacture |
JP2501118B2 (ja) * | 1988-06-17 | 1996-05-29 | 忠弘 大見 | 半導体装置の製造方法 |
DE68909945T2 (de) * | 1988-08-10 | 1994-03-03 | Du Pont | Supraleitende metalloxidzusammensetzungen und verfahren zur herstellung. |
US5017554A (en) * | 1988-08-24 | 1991-05-21 | E. I. Du Pont De Nemours And Company | Superconducting metal oxide Tl-Pb-Ca-Sr-Cu-O compositions and processes for manufacture and use |
EP0441903A4 (en) * | 1988-11-02 | 1991-12-04 | E.I. Du Pont De Nemours And Company | Superconducting metal oxide compositions and processes for manufacture and use |
DE69026339T2 (de) * | 1989-11-13 | 1996-08-14 | Fujitsu Ltd | Josephson-Übergang-Apparat |
FI950805A (fi) * | 1994-02-24 | 1995-08-25 | Shimadzu Corp | Suprajohtava tunneliliitos ja menetelmä sen valmistamiseksi |
US5783496A (en) * | 1996-03-29 | 1998-07-21 | Lam Research Corporation | Methods and apparatus for etching self-aligned contacts |
US5950104A (en) * | 1997-04-09 | 1999-09-07 | Vanguard International Semiconductor Corporation | Contact process using Y-contact etching |
US6165910A (en) * | 1997-12-29 | 2000-12-26 | Lam Research Corporation | Self-aligned contacts for semiconductor device |
US6133153A (en) * | 1998-03-30 | 2000-10-17 | Lam Research Corporation | Self-aligned contacts for semiconductor device |
US7042043B2 (en) | 2001-08-30 | 2006-05-09 | Micron Technology, Inc. | Programmable array logic or memory devices with asymmetrical tunnel barriers |
US7135734B2 (en) * | 2001-08-30 | 2006-11-14 | Micron Technology, Inc. | Graded composition metal oxide tunnel barrier interpoly insulators |
US6963103B2 (en) | 2001-08-30 | 2005-11-08 | Micron Technology, Inc. | SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7476925B2 (en) | 2001-08-30 | 2009-01-13 | Micron Technology, Inc. | Atomic layer deposition of metal oxide and/or low asymmetrical tunnel barrier interploy insulators |
US7068544B2 (en) | 2001-08-30 | 2006-06-27 | Micron Technology, Inc. | Flash memory with low tunnel barrier interpoly insulators |
US6778441B2 (en) | 2001-08-30 | 2004-08-17 | Micron Technology, Inc. | Integrated circuit memory device and method |
US6754108B2 (en) | 2001-08-30 | 2004-06-22 | Micron Technology, Inc. | DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators |
US7132711B2 (en) | 2001-08-30 | 2006-11-07 | Micron Technology, Inc. | Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers |
US7075829B2 (en) | 2001-08-30 | 2006-07-11 | Micron Technology, Inc. | Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
US7087954B2 (en) | 2001-08-30 | 2006-08-08 | Micron Technology, Inc. | In service programmable logic arrays with low tunnel barrier interpoly insulators |
US6784480B2 (en) * | 2002-02-12 | 2004-08-31 | Micron Technology, Inc. | Asymmetric band-gap engineered nonvolatile memory device |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US20040191697A1 (en) * | 2003-03-24 | 2004-09-30 | Communications Research Laboratory | Method for processing a niobium type thin film and method for manufacturing a superconducting integrated circuit |
US7097745B2 (en) * | 2003-06-27 | 2006-08-29 | Seagate Technology, Llc | Method of forming a tunneling magnetoresistive head |
US7099143B1 (en) * | 2005-05-24 | 2006-08-29 | Avx Corporation | Wet electrolytic capacitors |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7480130B2 (en) | 2006-03-09 | 2009-01-20 | Avx Corporation | Wet electrolytic capacitor |
US7511943B2 (en) | 2006-03-09 | 2009-03-31 | Avx Corporation | Wet electrolytic capacitor containing a cathode coating |
US7615385B2 (en) | 2006-09-20 | 2009-11-10 | Hypres, Inc | Double-masking technique for increasing fabrication yield in superconducting electronics |
US7760487B2 (en) * | 2007-10-22 | 2010-07-20 | Avx Corporation | Doped ceramic powder for use in forming capacitor anodes |
US7768773B2 (en) * | 2008-01-22 | 2010-08-03 | Avx Corporation | Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor |
US7852615B2 (en) * | 2008-01-22 | 2010-12-14 | Avx Corporation | Electrolytic capacitor anode treated with an organometallic compound |
US7760488B2 (en) * | 2008-01-22 | 2010-07-20 | Avx Corporation | Sintered anode pellet treated with a surfactant for use in an electrolytic capacitor |
US8203827B2 (en) * | 2009-02-20 | 2012-06-19 | Avx Corporation | Anode for a solid electrolytic capacitor containing a non-metallic surface treatment |
US10367134B2 (en) | 2017-06-07 | 2019-07-30 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
CN113517386B (zh) * | 2020-08-06 | 2022-05-31 | 阿里巴巴集团控股有限公司 | 约瑟夫森结、约瑟夫森结的制备方法、装置及超导电路 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5588382A (en) * | 1978-12-27 | 1980-07-04 | Fujitsu Ltd | Preparation of tunnel junction type josephson element |
-
1982
- 1982-06-16 CA CA000405292A patent/CA1168762A/fr not_active Expired
- 1982-06-18 US US06/390,116 patent/US4412902A/en not_active Expired - Lifetime
- 1982-06-22 FR FR8211126A patent/FR2508237B1/fr not_active Expired
- 1982-06-22 NL NL8202511A patent/NL190858C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
NL190858C (nl) | 1994-09-16 |
US4412902A (en) | 1983-11-01 |
FR2508237A1 (fr) | 1982-12-24 |
CA1168762A (fr) | 1984-06-05 |
NL8202511A (nl) | 1983-01-17 |
NL190858B (nl) | 1994-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address |