DE3434552C2 - - Google Patents

Info

Publication number
DE3434552C2
DE3434552C2 DE3434552A DE3434552A DE3434552C2 DE 3434552 C2 DE3434552 C2 DE 3434552C2 DE 3434552 A DE3434552 A DE 3434552A DE 3434552 A DE3434552 A DE 3434552A DE 3434552 C2 DE3434552 C2 DE 3434552C2
Authority
DE
Germany
Prior art keywords
implantation
ion implantation
mass separation
ion source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3434552A
Other languages
German (de)
English (en)
Other versions
DE3434552A1 (de
Inventor
Haruo Hino Jp Itoh
Tadashi Tokio/Tokyo Jp Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Energy and Industrial Technology Development Organization
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3434552A1 publication Critical patent/DE3434552A1/de
Application granted granted Critical
Publication of DE3434552C2 publication Critical patent/DE3434552C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
DE19843434552 1983-09-21 1984-09-20 Verfahren zur bildung einer pn-grenzschicht Granted DE3434552A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172987A JPS6065528A (ja) 1983-09-21 1983-09-21 ｐｎ接合形成法

Publications (2)

Publication Number Publication Date
DE3434552A1 DE3434552A1 (de) 1985-04-11
DE3434552C2 true DE3434552C2 (fr) 1989-10-19

Family

ID=15952071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843434552 Granted DE3434552A1 (de) 1983-09-21 1984-09-20 Verfahren zur bildung einer pn-grenzschicht

Country Status (3)

Country Link
JP (1) JPS6065528A (fr)
DE (1) DE3434552A1 (fr)
FR (1) FR2552265B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
US6982215B1 (en) * 1998-11-05 2006-01-03 Chartered Semiconductor Manufacturing Ltd. N type impurity doping using implantation of P2+ ions or As2+ Ions
KR101832230B1 (ko) 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915377B1 (fr) * 1968-10-04 1974-04-15

Also Published As

Publication number Publication date
DE3434552A1 (de) 1985-04-11
FR2552265A1 (fr) 1985-03-22
FR2552265B1 (fr) 1990-02-02
JPS6065528A (ja) 1985-04-15

Similar Documents

Publication Publication Date Title
DE69827319T2 (de) Solarzelle und Verfahren zu deren Herstellung
DE102012102341B4 (de) Halbleiterbauelement und Substrat mit chalkogen-dotiertem Gebiet
DE3427977C2 (fr)
DE69333173T2 (de) Verfahren zur Herstellung eines Substrates mit einer Halbleiterschicht auf einem Isolator
DE3043913A1 (de) Halbleiteranordnung und verfahren zu ihrer herstellung
DE4126955C2 (de) Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen
DE2160427C3 (fr)
DE19919955A1 (de) Halbleitervorrichtung mit hoher Spannungsfestigkeit
DE2702860A1 (de) Solarzelle und verfahren zu ihrer herstellung
DE2917564A1 (de) Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende
DE2917455A1 (de) Verfahren zur vollstaendigen ausheilung von gitterdefekten in durch ionenimplantation von phosphor erzeugten n-leitenden zonen einer siliciumhalbleitervorrichtung und zugehoerige siliciumhalbleitervorrichtung
DE112016005749T5 (de) Verfahren zum Produzieren eines Halbleiterepitaxialwafers und Verfahren zum Produzieren einer Festkörperbildgebungsvorrichtung
DE2627855A1 (de) Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung
DE2039381A1 (de) Verfahren zur Herstellung einer Elektrolumineszenz-Vorrichtung und Vorrichtung dieser Art
DE2808645A1 (de) Verfahren zum einstellen des leckstromes von sos-isolierschicht-feldeffekttransistoren
DE102015114361B4 (de) Verfahren zum prozessieren eines sauerstoff enthaltenden halbleiterkörpers
DE3434552C2 (fr)
DE3340583C2 (fr)
DE3147535C2 (fr)
DE3540452A1 (de) Verfahren zur herstellung eines duennschichttransistors
EP1050076B1 (fr) Procede de production de diodes
DE2832153A1 (de) Verfahren zur herstellung von halbleitervorrichtungen
DE112016003412T5 (de) Siliziumepitaxialwafer
DE3937393C2 (fr)
DE102009042514B4 (de) Verfahren und Vorrichtung mit SOI-Substratdotierung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 8000 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O

8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H.,DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN