FR2578681B1 - Procede pour former une couche mince monocristalline d'element semi-conducteur - Google Patents

Procede pour former une couche mince monocristalline d'element semi-conducteur

Info

Publication number
FR2578681B1
FR2578681B1 FR858511518A FR8511518A FR2578681B1 FR 2578681 B1 FR2578681 B1 FR 2578681B1 FR 858511518 A FR858511518 A FR 858511518A FR 8511518 A FR8511518 A FR 8511518A FR 2578681 B1 FR2578681 B1 FR 2578681B1
Authority
FR
France
Prior art keywords
forming
thin film
semiconductor element
monocrystalline thin
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR858511518A
Other languages
English (en)
Other versions
FR2578681A1 (fr
Inventor
Junichi Nishizawa
Hitoshi Abe
Soubei Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of FR2578681A1 publication Critical patent/FR2578681A1/fr
Application granted granted Critical
Publication of FR2578681B1 publication Critical patent/FR2578681B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
FR858511518A 1984-07-26 1985-07-26 Procede pour former une couche mince monocristalline d'element semi-conducteur Expired - Lifetime FR2578681B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59153978A JPH0766909B2 (ja) 1984-07-26 1984-07-26 元素半導体単結晶薄膜の成長法

Publications (2)

Publication Number Publication Date
FR2578681A1 FR2578681A1 (fr) 1986-09-12
FR2578681B1 true FR2578681B1 (fr) 1990-10-26

Family

ID=15574233

Family Applications (1)

Application Number Title Priority Date Filing Date
FR858511518A Expired - Lifetime FR2578681B1 (fr) 1984-07-26 1985-07-26 Procede pour former une couche mince monocristalline d'element semi-conducteur

Country Status (4)

Country Link
JP (1) JPH0766909B2 (fr)
DE (1) DE3526825A1 (fr)
FR (1) FR2578681B1 (fr)
GB (1) GB2162206B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8508699D0 (en) * 1985-04-03 1985-05-09 Barr & Stroud Ltd Chemical vapour deposition of products
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
JPH08973B2 (ja) * 1986-03-31 1996-01-10 キヤノン株式会社 堆積膜形成法
US4877650A (en) * 1986-03-31 1989-10-31 Canon Kabushiki Kaisha Method for forming deposited film
JPS62228471A (ja) * 1986-03-31 1987-10-07 Canon Inc 堆積膜形成法
AU7077087A (en) * 1986-03-31 1987-10-08 Canon Kabushiki Kaisha Forming a deposited film
GB2191510A (en) * 1986-04-16 1987-12-16 Gen Electric Plc Depositing doped polysilicon films
US5246536A (en) * 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JPH0639357B2 (ja) * 1986-09-08 1994-05-25 新技術開発事業団 元素半導体単結晶薄膜の成長方法
CA1328796C (fr) * 1986-09-12 1994-04-26 Bernard Steele Meyerson Methode et appareil de depot epitaxial de couches de silicium en phase vapeur a basse temperature et a basse pression
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
JP2587624B2 (ja) * 1986-11-28 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
JP2742789B2 (ja) * 1987-08-12 1998-04-22 セイコーエプソン株式会社 シリコン薄膜の製造方法及びシリコン薄膜製造装置
KR890003983A (ko) * 1987-08-27 1989-04-19 엔.라이스 머레트 종래의 cvd 반응로를 사용한 스트레인층 초격자의 연속 화학 증착 성장 방법
DE3741672A1 (de) * 1987-12-09 1989-06-22 Asea Brown Boveri Verfahren und anordnung zur oberflaechenbehandlung von substraten
EP0430274A3 (en) * 1989-12-01 1993-03-24 Seiko Instruments Inc. Method of producing bipolar transistor
US5338389A (en) * 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
JPH0649633B2 (ja) * 1990-01-19 1994-06-29 新技術事業団 化合物結晶のエピタキシャル成長におけるドーピング方法
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
TW209253B (fr) * 1990-09-21 1993-07-11 Nidden Aneruba Kk
JP3507072B2 (ja) * 1991-07-16 2004-03-15 セイコーエプソン株式会社 化学気相推積装置及び半導体膜形成方法と薄膜半導体装置の製造方法
US7435665B2 (en) 2004-10-06 2008-10-14 Okmetic Oyj CVD doped structures
JP5696530B2 (ja) 2010-05-01 2015-04-08 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5741382B2 (ja) 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
DD153899A5 (de) * 1980-02-26 1982-02-10 Lohja Ab Oy Verfahren und vorrichtung zur durchfuehrung des wachstums von zusammengesetzten duennen schichten
JPS5898917A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 原子層エビタキシヤル装置
JPS58102516A (ja) * 1981-12-14 1983-06-18 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
GB2162206B (en) 1987-05-28
FR2578681A1 (fr) 1986-09-12
DE3526825C2 (fr) 1993-05-13
GB2162206A (en) 1986-01-29
JPS6134928A (ja) 1986-02-19
GB8518833D0 (en) 1985-08-29
JPH0766909B2 (ja) 1995-07-19
DE3526825A1 (de) 1986-02-06

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