GB2162206B - Process for forming monocrystalline thin film of element semiconductor - Google Patents

Process for forming monocrystalline thin film of element semiconductor

Info

Publication number
GB2162206B
GB2162206B GB08518833A GB8518833A GB2162206B GB 2162206 B GB2162206 B GB 2162206B GB 08518833 A GB08518833 A GB 08518833A GB 8518833 A GB8518833 A GB 8518833A GB 2162206 B GB2162206 B GB 2162206B
Authority
GB
United Kingdom
Prior art keywords
thin film
element semiconductor
monocrystalline thin
forming monocrystalline
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08518833A
Other versions
GB2162206A (en
GB8518833D0 (en
Inventor
Junichi Nishizawa
Hitoshi Abe
Soubei Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of GB8518833D0 publication Critical patent/GB8518833D0/en
Publication of GB2162206A publication Critical patent/GB2162206A/en
Application granted granted Critical
Publication of GB2162206B publication Critical patent/GB2162206B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
GB08518833A 1984-07-26 1985-07-25 Process for forming monocrystalline thin film of element semiconductor Expired GB2162206B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59153978A JPH0766909B2 (en) 1984-07-26 1984-07-26 Element semiconductor single crystal thin film growth method

Publications (3)

Publication Number Publication Date
GB8518833D0 GB8518833D0 (en) 1985-08-29
GB2162206A GB2162206A (en) 1986-01-29
GB2162206B true GB2162206B (en) 1987-05-28

Family

ID=15574233

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08518833A Expired GB2162206B (en) 1984-07-26 1985-07-25 Process for forming monocrystalline thin film of element semiconductor

Country Status (4)

Country Link
JP (1) JPH0766909B2 (en)
DE (1) DE3526825A1 (en)
FR (1) FR2578681B1 (en)
GB (1) GB2162206B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8508699D0 (en) * 1985-04-03 1985-05-09 Barr & Stroud Ltd Chemical vapour deposition of products
GB2185758B (en) * 1985-12-28 1990-09-05 Canon Kk Method for forming deposited film
US5322568A (en) * 1985-12-28 1994-06-21 Canon Kabushiki Kaisha Apparatus for forming deposited film
GB2193976B (en) * 1986-03-19 1990-05-30 Gen Electric Plc Process for depositing a polysilicon film on a substrate
JP2662396B2 (en) * 1986-03-31 1997-10-08 キヤノン株式会社 Method of forming crystalline deposited film
JPS62228471A (en) * 1986-03-31 1987-10-07 Canon Inc Formation of deposited film
AU7077087A (en) * 1986-03-31 1987-10-08 Canon Kabushiki Kaisha Forming a deposited film
US4877650A (en) * 1986-03-31 1989-10-31 Canon Kabushiki Kaisha Method for forming deposited film
GB2191510A (en) * 1986-04-16 1987-12-16 Gen Electric Plc Depositing doped polysilicon films
US5246536A (en) * 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JPH0639357B2 (en) * 1986-09-08 1994-05-25 新技術開発事業団 Method for growing element semiconductor single crystal thin film
CA1328796C (en) * 1986-09-12 1994-04-26 Bernard Steele Meyerson Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
JP2587623B2 (en) * 1986-11-22 1997-03-05 新技術事業団 Epitaxial crystal growth method for compound semiconductor
JP2587624B2 (en) * 1986-11-28 1997-03-05 新技術事業団 Epitaxial crystal growth method for compound semiconductor
JP2742789B2 (en) * 1987-08-12 1998-04-22 セイコーエプソン株式会社 Silicon thin film manufacturing method and silicon thin film manufacturing apparatus
KR890003983A (en) * 1987-08-27 1989-04-19 엔.라이스 머레트 Continuous Chemical Vapor Deposition Growth of Strain Layer Superlattice Using Conventional CVD Reactor
DE3741672A1 (en) * 1987-12-09 1989-06-22 Asea Brown Boveri METHOD AND ARRANGEMENT FOR THE SURFACE TREATMENT OF SUBSTRATES
EP0430274A3 (en) * 1989-12-01 1993-03-24 Seiko Instruments Inc. Method of producing bipolar transistor
JPH0649633B2 (en) * 1990-01-19 1994-06-29 新技術事業団 Doping method in epitaxial growth of compound crystals
US5338389A (en) * 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
TW209253B (en) * 1990-09-21 1993-07-11 Nidden Aneruba Kk
EP0552375B1 (en) * 1991-07-16 2004-06-02 Seiko Epson Corporation Method of forming a semiconductor film with a chemical vapor deposition apparatus
US7435665B2 (en) 2004-10-06 2008-10-14 Okmetic Oyj CVD doped structures
JP5696530B2 (en) * 2010-05-01 2015-04-08 東京エレクトロン株式会社 Thin film forming method and film forming apparatus
JP5741382B2 (en) 2011-09-30 2015-07-01 東京エレクトロン株式会社 Thin film forming method and film forming apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1900116C3 (en) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of high-purity monocrystalline layers consisting of silicon
SE393967B (en) * 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
DD153899A5 (en) * 1980-02-26 1982-02-10 Lohja Ab Oy METHOD AND DEVICE FOR IMPLEMENTING THE GROWTH OF COMPOSED DUNY LAYERS
JPS5898917A (en) * 1981-12-09 1983-06-13 Seiko Epson Corp Atomic layer epitaxial device
JPS58102516A (en) * 1981-12-14 1983-06-18 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
GB2162206A (en) 1986-01-29
JPS6134928A (en) 1986-02-19
DE3526825C2 (en) 1993-05-13
JPH0766909B2 (en) 1995-07-19
FR2578681B1 (en) 1990-10-26
GB8518833D0 (en) 1985-08-29
DE3526825A1 (en) 1986-02-06
FR2578681A1 (en) 1986-09-12

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 20050724