GB2167899B - Methods of manufacturing thin film transistors - Google Patents

Methods of manufacturing thin film transistors

Info

Publication number
GB2167899B
GB2167899B GB08527737A GB8527737A GB2167899B GB 2167899 B GB2167899 B GB 2167899B GB 08527737 A GB08527737 A GB 08527737A GB 8527737 A GB8527737 A GB 8527737A GB 2167899 B GB2167899 B GB 2167899B
Authority
GB
United Kingdom
Prior art keywords
methods
thin film
film transistors
manufacturing thin
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08527737A
Other versions
GB8527737D0 (en
GB2167899A (en
Inventor
Hisao Hayashi
Takashi Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8527737D0 publication Critical patent/GB8527737D0/en
Publication of GB2167899A publication Critical patent/GB2167899A/en
Application granted granted Critical
Publication of GB2167899B publication Critical patent/GB2167899B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
GB08527737A 1984-11-15 1985-11-11 Methods of manufacturing thin film transistors Expired GB2167899B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59241239A JPH0824184B2 (en) 1984-11-15 1984-11-15 Method for manufacturing thin film transistor

Publications (3)

Publication Number Publication Date
GB8527737D0 GB8527737D0 (en) 1985-12-18
GB2167899A GB2167899A (en) 1986-06-04
GB2167899B true GB2167899B (en) 1988-04-27

Family

ID=17071271

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08527737A Expired GB2167899B (en) 1984-11-15 1985-11-11 Methods of manufacturing thin film transistors

Country Status (7)

Country Link
JP (1) JPH0824184B2 (en)
KR (1) KR930010978B1 (en)
CN (1) CN85109088A (en)
DE (1) DE3540452C2 (en)
FR (1) FR2573248B1 (en)
GB (1) GB2167899B (en)
NL (1) NL194524C (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242507A (en) * 1989-04-05 1993-09-07 Boston University Impurity-induced seeding of polycrystalline semiconductors
US5242858A (en) * 1990-09-07 1993-09-07 Canon Kabushiki Kaisha Process for preparing semiconductor device by use of a flattening agent and diffusion
JP3556679B2 (en) * 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 Electro-optical device
US5403756A (en) * 1991-11-20 1995-04-04 Sharp Kabushiki Kaisha Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor
KR950003235B1 (en) * 1991-12-30 1995-04-06 주식회사 금성사 Semiconductor device structure
JP3587537B2 (en) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US5985741A (en) 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
KR100612853B1 (en) * 2004-07-21 2006-08-14 삼성전자주식회사 Si based material layer having wire type silicide and method of forming the same
CN104409635B (en) 2014-12-16 2017-02-22 京东方科技集团股份有限公司 Organic thin film transistor and manufacturing method thereof, array substrate, and display unit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
JPS558026A (en) * 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
JPS5856409A (en) * 1981-09-30 1983-04-04 Toshiba Corp Production of semiconductor device
JPS59165451A (en) * 1983-03-11 1984-09-18 Toshiba Corp Manufacture of semiconductor device
JPS61191070A (en) * 1985-02-20 1986-08-25 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE3540452C2 (en) 1999-07-29
GB8527737D0 (en) 1985-12-18
NL194524C (en) 2002-06-04
JPH0824184B2 (en) 1996-03-06
CN85109088A (en) 1986-08-27
FR2573248A1 (en) 1986-05-16
FR2573248B1 (en) 1991-06-21
KR860004455A (en) 1986-06-23
GB2167899A (en) 1986-06-04
NL194524B (en) 2002-02-01
JPS61119079A (en) 1986-06-06
NL8503123A (en) 1986-06-02
KR930010978B1 (en) 1993-11-18
DE3540452A1 (en) 1986-06-05

Similar Documents

Publication Publication Date Title
EP0249211A3 (en) Method of manufacturing a thin film transistor
GB2169442B (en) Forming thin semiconductor films
AU567465B2 (en) Duster-polisher made of plastic film
GB2077039B (en) Method of making planar thin film transistors
GB2153589B (en) Thin film transistor
GB8411967D0 (en) Thin film transistors
EP0196915A3 (en) Thin film transistor array and method of manufacturing same
DE3279239D1 (en) Thin-film transistor and method of manufacture therefor
GB8421403D0 (en) Thin film transistor
DE3461302D1 (en) Method of forming thin film
JPS57121064A (en) Formation of surface-even thin film
GB2171842B (en) Thin film transistor
GB2172745B (en) Method of manufacturing thin film transistor
GB8518833D0 (en) Forming moncrystalline thin film
EP0194748A3 (en) Magnetic thin film and method of manufacturing the same
GB2169746B (en) Thin film transistor
EP0159027A3 (en) Magnetic thin film
DE3274700D1 (en) Method of forming thin film transistors
GB8510576D0 (en) Producing thin film
GB8518834D0 (en) Forming moncrystalline thin film
GB2166685B (en) Manufacturing method of laminate film
GB8517988D0 (en) Manufacturing transistors
GB2167899B (en) Methods of manufacturing thin film transistors
GB8704714D0 (en) Thin film transistors
DE3571725D1 (en) Thin film transistor and method of making the same

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee