NL194524B - Method for manufacturing a thin film transistor. - Google Patents
Method for manufacturing a thin film transistor.Info
- Publication number
- NL194524B NL194524B NL8503123A NL8503123A NL194524B NL 194524 B NL194524 B NL 194524B NL 8503123 A NL8503123 A NL 8503123A NL 8503123 A NL8503123 A NL 8503123A NL 194524 B NL194524 B NL 194524B
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- thin film
- film transistor
- transistor
- thin
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59241239A JPH0824184B2 (en) | 1984-11-15 | 1984-11-15 | Method for manufacturing thin film transistor |
JP24123984 | 1984-11-15 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8503123A NL8503123A (en) | 1986-06-02 |
NL194524B true NL194524B (en) | 2002-02-01 |
NL194524C NL194524C (en) | 2002-06-04 |
Family
ID=17071271
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8503123A NL194524C (en) | 1984-11-15 | 1985-11-13 | Method for manufacturing a thin film transistor. |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0824184B2 (en) |
KR (1) | KR930010978B1 (en) |
CN (1) | CN85109088A (en) |
DE (1) | DE3540452C2 (en) |
FR (1) | FR2573248B1 (en) |
GB (1) | GB2167899B (en) |
NL (1) | NL194524C (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242507A (en) * | 1989-04-05 | 1993-09-07 | Boston University | Impurity-induced seeding of polycrystalline semiconductors |
US5242858A (en) * | 1990-09-07 | 1993-09-07 | Canon Kabushiki Kaisha | Process for preparing semiconductor device by use of a flattening agent and diffusion |
JP3556679B2 (en) * | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | Electro-optical device |
US5403756A (en) * | 1991-11-20 | 1995-04-04 | Sharp Kabushiki Kaisha | Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor |
KR950003235B1 (en) * | 1991-12-30 | 1995-04-06 | 주식회사 금성사 | Semiconductor device structure |
JP3587537B2 (en) * | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US5985741A (en) | 1993-02-15 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
KR100612853B1 (en) * | 2004-07-21 | 2006-08-14 | 삼성전자주식회사 | Si based material layer having wire type silicide and method of forming the same |
CN104409635B (en) | 2014-12-16 | 2017-02-22 | 京东方科技集团股份有限公司 | Organic thin film transistor and manufacturing method thereof, array substrate, and display unit |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4177084A (en) * | 1978-06-09 | 1979-12-04 | Hewlett-Packard Company | Method for producing a low defect layer of silicon-on-sapphire wafer |
JPS558026A (en) * | 1978-06-30 | 1980-01-21 | Matsushita Electric Ind Co Ltd | Semi-conductor device manufacturing method |
JPS5856409A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Production of semiconductor device |
JPS59165451A (en) * | 1983-03-11 | 1984-09-18 | Toshiba Corp | Manufacture of semiconductor device |
JPS61191070A (en) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | Manufacture of semiconductor device |
-
1984
- 1984-11-15 JP JP59241239A patent/JPH0824184B2/en not_active Expired - Lifetime
-
1985
- 1985-10-16 KR KR1019850007608A patent/KR930010978B1/en not_active IP Right Cessation
- 1985-11-11 GB GB08527737A patent/GB2167899B/en not_active Expired
- 1985-11-13 NL NL8503123A patent/NL194524C/en not_active IP Right Cessation
- 1985-11-14 DE DE3540452A patent/DE3540452C2/en not_active Expired - Fee Related
- 1985-11-15 FR FR858516906A patent/FR2573248B1/en not_active Expired - Lifetime
- 1985-11-15 CN CN198585109088A patent/CN85109088A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2167899B (en) | 1988-04-27 |
DE3540452C2 (en) | 1999-07-29 |
GB8527737D0 (en) | 1985-12-18 |
NL194524C (en) | 2002-06-04 |
JPH0824184B2 (en) | 1996-03-06 |
CN85109088A (en) | 1986-08-27 |
FR2573248A1 (en) | 1986-05-16 |
FR2573248B1 (en) | 1991-06-21 |
KR860004455A (en) | 1986-06-23 |
GB2167899A (en) | 1986-06-04 |
JPS61119079A (en) | 1986-06-06 |
NL8503123A (en) | 1986-06-02 |
KR930010978B1 (en) | 1993-11-18 |
DE3540452A1 (en) | 1986-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20030601 |