DE3306515A1 - Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen - Google Patents

Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen

Info

Publication number
DE3306515A1
DE3306515A1 DE19833306515 DE3306515A DE3306515A1 DE 3306515 A1 DE3306515 A1 DE 3306515A1 DE 19833306515 DE19833306515 DE 19833306515 DE 3306515 A DE3306515 A DE 3306515A DE 3306515 A1 DE3306515 A1 DE 3306515A1
Authority
DE
Germany
Prior art keywords
bandfoermigen
siliziumkoerpern
grossflaechigen
manufacture
apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833306515
Other languages
English (en)
Other versions
DE3306515C2 (de
Inventor
Richard Dr Rer Nat Falckenberg
Josef Dr Rer Nat Grabmaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE3306515A priority Critical patent/DE3306515C2/de
Publication of DE3306515A1 publication Critical patent/DE3306515A1/de
Application granted granted Critical
Publication of DE3306515C2 publication Critical patent/DE3306515C2/de
Application status is Expired legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903Dendrite or web or cage technique
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/02Bead coater
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1036Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y10T117/1048Pulling includes a horizontal component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1052Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1056Seed pulling including details of precursor replenishment
DE3306515A 1983-02-24 1983-02-24 Expired DE3306515C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3306515A DE3306515C2 (de) 1983-02-24 1983-02-24

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE3306515A DE3306515C2 (de) 1983-02-24 1983-02-24
US06/560,047 US4563979A (en) 1983-02-24 1983-12-09 Apparatus for manufacturing large-surface, band-shaped silicon for solar cells
JP59030125A JPS59156906A (en) 1983-02-24 1984-02-20 Apparatus for manufacturing large area silicon ribbon for solar cell

Publications (2)

Publication Number Publication Date
DE3306515A1 true DE3306515A1 (de) 1984-08-30
DE3306515C2 DE3306515C2 (de) 1989-11-02

Family

ID=6191740

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3306515A Expired DE3306515C2 (de) 1983-02-24 1983-02-24

Country Status (3)

Country Link
US (1) US4563979A (de)
JP (1) JPS59156906A (de)
DE (1) DE3306515C2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3524997A1 (de) * 1985-07-12 1987-01-15 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
DE3524983A1 (de) * 1985-07-12 1987-01-22 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
US4748014A (en) * 1982-12-27 1988-05-31 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
EP0170119B1 (de) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung
JPS62291977A (en) * 1986-06-06 1987-12-18 Siemens Ag Method and apparatus for cutting silicon plate for solar battery
DE3736339A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Anordnung zum kontinuierlichen aufschmelzen von siliziumgranulat fuer das bandziehverfahren
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036177A1 (de) * 1979-10-09 1981-04-30 Siltec Corp Vorrichtung zum herstellen von festen kristallen aus geschmolzenem material
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2928212A (en) * 1955-01-24 1960-03-15 Cie Reunies Glaces Et Verres Method and apparatus for continuously drawing a glass sheet
US3607115A (en) * 1969-10-29 1971-09-21 Gen Motors Corp Crystal pulling from molten melts including solute introduction means below the seed-melt interface
US3759671A (en) * 1971-10-15 1973-09-18 Gen Motors Corp Horizontal growth of crystal ribbons
JPS5720278B2 (de) * 1975-11-14 1982-04-27
JPH0116050B2 (de) * 1978-10-11 1989-03-22 Nippon Electric Co
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
DE3036177A1 (de) * 1979-10-09 1981-04-30 Siltec Corp Vorrichtung zum herstellen von festen kristallen aus geschmolzenem material
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3524997A1 (de) * 1985-07-12 1987-01-15 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
DE3524983A1 (de) * 1985-07-12 1987-01-22 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung

Also Published As

Publication number Publication date
JPS59156906A (en) 1984-09-06
DE3306515C2 (de) 1989-11-02
US4563979A (en) 1986-01-14

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8110 Request for examination paragraph 44
D2 Grant after examination
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee