DE3231326A1 - Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen - Google Patents

Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen

Info

Publication number
DE3231326A1
DE3231326A1 DE19823231326 DE3231326A DE3231326A1 DE 3231326 A1 DE3231326 A1 DE 3231326A1 DE 19823231326 DE19823231326 DE 19823231326 DE 3231326 A DE3231326 A DE 3231326A DE 3231326 A1 DE3231326 A1 DE 3231326A1
Authority
DE
Germany
Prior art keywords
grossflaechigen
bandfoermigen
siliziumkoerpern
manufacture
apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19823231326
Other languages
English (en)
Inventor
Helmut Dr Rer Nat Foell
Josef Dr Rer Nat Grabmaier
Richard Dr Rer Nat Falckenberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19823231326 priority Critical patent/DE3231326A1/de
Publication of DE3231326A1 publication Critical patent/DE3231326A1/de
Application status is Ceased legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007Pulling on a substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903Dendrite or web or cage technique
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1036Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y10T117/1048Pulling includes a horizontal component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1056Seed pulling including details of precursor replenishment
DE19823231326 1982-08-23 1982-08-23 Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen Ceased DE3231326A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19823231326 DE3231326A1 (de) 1982-08-23 1982-08-23 Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19823231326 DE3231326A1 (de) 1982-08-23 1982-08-23 Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
US06/512,733 US4563976A (en) 1982-08-23 1983-07-11 Device for manufacturing large-surface, tape-shaped silicon bodies for solar cells
JP15145583A JPS5954693A (en) 1982-08-23 1983-08-19 Solar cell large area ribbon silicon crystal manufacturing device

Publications (1)

Publication Number Publication Date
DE3231326A1 true DE3231326A1 (de) 1984-02-23

Family

ID=6171516

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823231326 Ceased DE3231326A1 (de) 1982-08-23 1982-08-23 Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen

Country Status (3)

Country Link
US (1) US4563976A (de)
JP (1) JPS5954693A (de)
DE (1) DE3231326A1 (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
EP0158180A1 (de) * 1984-04-09 1985-10-16 Siemens Aktiengesellschaft Verfahren zum Herstellen von grossflóchigen Siliziumkristallk rpern fòr Solarzellen
EP0158181A1 (de) * 1984-04-09 1985-10-16 Siemens Aktiengesellschaft Verfahren zum Herstellen von rissfreien, grossflächigen Siliziumkristallkörpern für Solarzellen
EP0165449A1 (de) * 1984-05-23 1985-12-27 Bayer Ag Verfahren zur Herstellung von Halbleiterfolien
US4599244A (en) * 1984-07-11 1986-07-08 Siemens Aktiengesellschaft Method large-area silicon bodies
DE3524997A1 (de) * 1985-07-12 1987-01-15 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
DE3524983A1 (de) * 1985-07-12 1987-01-22 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
DE19846072A1 (de) * 1998-10-06 2000-04-27 Daimler Chrysler Ag Vorrichtung zum Spülen von Lackiereinrichtungen

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4748014A (en) * 1982-12-27 1988-05-31 Sri International Process and apparatus for obtaining silicon from fluosilicic acid
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
EP0170119B1 (de) * 1984-07-31 1988-10-12 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Herstellen von bandförmigen Siliziumkristallen mit horizontaler Ziehrichtung
US4873063A (en) * 1986-01-06 1989-10-10 Bleil Carl E Apparatus for zone regrowth of crystal ribbons
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
US4775443A (en) * 1986-02-06 1988-10-04 Bleil Carl E Method and apparatus for zone regrowth of crystal ribbons from bulk material
JPS62291977A (en) * 1986-06-06 1987-12-18 Siemens Ag Method and apparatus for cutting silicon plate for solar battery
DE3806001A1 (de) * 1988-02-25 1989-09-07 Siemens Ag Anordnung zum vollstaendigen entleeren von mit siliziumschmelze gefuellten quarzwannen oder -tiegeln nach dem siliziumbandziehen
DE3901042C2 (de) * 1989-01-14 1993-07-15 Nukem Gmbh, 8755 Alzenau, De
US5229083A (en) * 1990-02-05 1993-07-20 Bleil Carl E Method and apparatus for crystal ribbon growth
US5069742A (en) * 1990-02-05 1991-12-03 Bleil Carl E Method and apparatus for crystal ribbon growth
US5055157A (en) * 1990-02-05 1991-10-08 Bleil Carl E Method of crystal ribbon growth
US5199990A (en) * 1990-05-08 1993-04-06 Zeniya Industry Co., Ltd. Apparatus for solder-plating a lead-frame carrying electronic components
JP2928664B2 (ja) * 1991-08-12 1999-08-03 株式会社東芝 酸化珪素成膜方法およびこの方法に用いる成膜装置
WO1994025177A1 (de) * 1993-05-05 1994-11-10 Steag Micro-Tech Gmbh Sternenfels Vorrichtung zur belackung oder beschichtung von platten oder scheiben
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace
WO2008039816A1 (en) * 2006-09-28 2008-04-03 Bp Corporation North America Inc. Method and apparatus for the production of crystalline silicon substrates
US8163090B2 (en) * 2007-12-10 2012-04-24 Solopower, Inc. Methods structures and apparatus to provide group VIA and IA materials for solar cell absorber formation
US8323408B2 (en) * 2007-12-10 2012-12-04 Solopower, Inc. Methods and apparatus to provide group VIA materials to reactors for group IBIIIAVIA film formation
US20150040819A1 (en) * 2013-08-08 2015-02-12 Energy Materials Research, LLC System and method for forming a silicon wafer

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638269A1 (de) * 1976-08-25 1978-03-02 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem halbleitermaterial
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4169739A (en) * 1978-04-12 1979-10-02 Semix, Incorporated Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action
US4174234A (en) * 1978-04-12 1979-11-13 Semix, Incorporated Silicon-impregnated foraminous sheet
DE2850805A1 (de) * 1978-11-23 1980-06-12 Siemens Ag Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen
DE2604351B2 (de) * 1975-02-07 1980-12-11 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande)
DE3036104A1 (de) * 1979-09-28 1981-04-16 Honeywell Inc Verfahren zum ziehen einer polykristallinen siliciumschicht auf einem substrat
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
DE3010557A1 (de) * 1980-03-19 1981-09-24 Siemens Ag Verfahren zum herstellen von grossflaechigen siliziumkoerpern fuer solarzellen

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US600250A (en) * 1898-03-08 Galvanized or metallic-coated wire-cloth
US2673549A (en) * 1952-02-02 1954-03-30 Frucki Alfred Moistening apparatus for flat surfaces
US2928212A (en) * 1955-01-24 1960-03-15 Cie Reunies Glaces Et Verres Method and apparatus for continuously drawing a glass sheet
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K.
JPS5720278B2 (de) * 1975-11-14 1982-04-27
US4325917A (en) * 1977-07-21 1982-04-20 Pelts Boris B Method and apparatus for producing sapphire tubes
US4269652A (en) * 1978-11-06 1981-05-26 Allied Chemical Corporation Method for growing crystalline materials
DE2850790C2 (de) * 1978-11-23 1987-02-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US4430305A (en) * 1979-02-12 1984-02-07 Mobil Solar Energy Corporation Displaced capillary dies
DE3231268A1 (de) * 1982-08-23 1984-02-23 Siemens Ag Verfahren und vorrichtung zum asymmetrischen beschichten eines bandfoermigen traegerkoerpers mit silizium fuer die weiterverarbeitung zu solarzellen

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2604351B2 (de) * 1975-02-07 1980-12-11 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande)
DE2638269A1 (de) * 1976-08-25 1978-03-02 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem halbleitermaterial
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4169739A (en) * 1978-04-12 1979-10-02 Semix, Incorporated Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action
US4174234A (en) * 1978-04-12 1979-11-13 Semix, Incorporated Silicon-impregnated foraminous sheet
DE2850805A1 (de) * 1978-11-23 1980-06-12 Siemens Ag Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
DE3036104A1 (de) * 1979-09-28 1981-04-16 Honeywell Inc Verfahren zum ziehen einer polykristallinen siliciumschicht auf einem substrat
DE3010557A1 (de) * 1980-03-19 1981-09-24 Siemens Ag Verfahren zum herstellen von grossflaechigen siliziumkoerpern fuer solarzellen

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens Ag Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
EP0158180A1 (de) * 1984-04-09 1985-10-16 Siemens Aktiengesellschaft Verfahren zum Herstellen von grossflóchigen Siliziumkristallk rpern fòr Solarzellen
EP0158181A1 (de) * 1984-04-09 1985-10-16 Siemens Aktiengesellschaft Verfahren zum Herstellen von rissfreien, grossflächigen Siliziumkristallkörpern für Solarzellen
EP0165449A1 (de) * 1984-05-23 1985-12-27 Bayer Ag Verfahren zur Herstellung von Halbleiterfolien
US4670096A (en) * 1984-05-23 1987-06-02 Bayer Aktiengesellschaft Process and apparatus for producing semi-conductor foils
US4599244A (en) * 1984-07-11 1986-07-08 Siemens Aktiengesellschaft Method large-area silicon bodies
DE3524997A1 (de) * 1985-07-12 1987-01-15 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
DE3524983A1 (de) * 1985-07-12 1987-01-22 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
DE19846072A1 (de) * 1998-10-06 2000-04-27 Daimler Chrysler Ag Vorrichtung zum Spülen von Lackiereinrichtungen
DE19846072B4 (de) * 1998-10-06 2006-01-19 Daimlerchrysler Ag Vorrichtung zum Spülen von Lackiereinrichtungen

Also Published As

Publication number Publication date
JPS5954693A (en) 1984-03-29
US4563976A (en) 1986-01-14

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
8131 Rejection