FR2356282A1 - Procede de fabrication de rubans de matiere semi-conductrice, notamment pour la production de piles solaires - Google Patents

Procede de fabrication de rubans de matiere semi-conductrice, notamment pour la production de piles solaires

Info

Publication number
FR2356282A1
FR2356282A1 FR7636600A FR7636600A FR2356282A1 FR 2356282 A1 FR2356282 A1 FR 2356282A1 FR 7636600 A FR7636600 A FR 7636600A FR 7636600 A FR7636600 A FR 7636600A FR 2356282 A1 FR2356282 A1 FR 2356282A1
Authority
FR
France
Prior art keywords
semi
production
conductive material
solar batteries
ribbons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7636600A
Other languages
English (en)
Other versions
FR2356282B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Publication of FR2356282A1 publication Critical patent/FR2356282A1/fr
Application granted granted Critical
Publication of FR2356282B1 publication Critical patent/FR2356282B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Dans le procédé selon la présente invention, on forme un corps tubulaire 10 sensiblement monocristallin à l'aide d'une matière semi-conductrice en utilisant notamment une croissance à partir d'un bain de fusion et on divise ledit corps tubulaire dans le sens de sa longueur à plusieurs corps 26 analogues à des rubans après avoir formé une jonction photovoltaïque dans l'épaisseur dudit corps tubulaire Applications : piles solaires.
FR7636600A 1975-12-05 1976-12-03 Procede de fabrication de rubans de matiere semi-conductrice, notamment pour la production de piles solaires Granted FR2356282A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/638,186 US4095329A (en) 1975-12-05 1975-12-05 Manufacture of semiconductor ribbon and solar cells

Publications (2)

Publication Number Publication Date
FR2356282A1 true FR2356282A1 (fr) 1978-01-20
FR2356282B1 FR2356282B1 (fr) 1982-12-10

Family

ID=24558988

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7636600A Granted FR2356282A1 (fr) 1975-12-05 1976-12-03 Procede de fabrication de rubans de matiere semi-conductrice, notamment pour la production de piles solaires
FR7714077A Granted FR2353135A1 (fr) 1975-12-05 1977-05-09 Procede de fabrication de rubans de matiere semiconductrice, notamment pour la production de piles solaires

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7714077A Granted FR2353135A1 (fr) 1975-12-05 1977-05-09 Procede de fabrication de rubans de matiere semiconductrice, notamment pour la production de piles solaires

Country Status (10)

Country Link
US (1) US4095329A (fr)
JP (1) JPS5839391B2 (fr)
AU (2) AU499285B2 (fr)
CA (1) CA1083253A (fr)
DE (1) DE2654946A1 (fr)
FR (2) FR2356282A1 (fr)
GB (1) GB1563408A (fr)
IL (2) IL50723A (fr)
IN (1) IN147667B (fr)
NL (1) NL186609C (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4989059A (en) * 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US20050098202A1 (en) * 2003-11-10 2005-05-12 Maltby Robert E.Jr. Non-planar photocell
DE102004038718A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium
US20080210290A1 (en) * 2006-04-14 2008-09-04 Dau Wu Plasma inside vapor deposition apparatus and method for making multi-junction silicon thin film solar cell modules and panels
KR20110042051A (ko) 2008-06-11 2011-04-22 솔라 임플란트 테크놀로지스 아이엔씨. 주입을 사용하여 솔라 셀의 제작
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
WO2013070978A2 (fr) 2011-11-08 2013-05-16 Intevac, Inc. Système et procédé de traitement de substrat
TWI570745B (zh) 2012-12-19 2017-02-11 因特瓦克公司 用於電漿離子植入之柵極

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
FR2105936A5 (fr) * 1970-08-28 1972-04-28 Tyco Laboratories Inc
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB657485A (en) * 1947-08-06 1951-09-19 Megatron Ltd Improvements in or relating to photo-electric cells of the barrier layer type
NL270665A (fr) * 1960-10-31 1900-01-01
US3129061A (en) * 1961-03-27 1964-04-14 Westinghouse Electric Corp Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
GB1054331A (fr) * 1963-05-16
US3565719A (en) * 1967-05-17 1971-02-23 Nasa Solar panel fabrication
US3591348A (en) * 1968-01-24 1971-07-06 Tyco Laboratories Inc Method of growing crystalline materials
US3826625A (en) * 1971-11-08 1974-07-30 Tyco Laboratories Inc Method and apparatus for growing crystalline bodies from the melt using a porous die member

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
FR2105936A5 (fr) * 1970-08-28 1972-04-28 Tyco Laboratories Inc
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices

Also Published As

Publication number Publication date
IL54785A0 (en) 1978-07-31
IL50723A0 (en) 1976-12-31
DE2654946C2 (fr) 1989-03-09
FR2353135B1 (fr) 1983-06-03
DE2654946A1 (de) 1977-06-16
IL50723A (en) 1978-10-31
AU4339179A (en) 1979-05-17
JPS5839391B2 (ja) 1983-08-30
FR2353135A1 (fr) 1977-12-23
CA1083253A (fr) 1980-08-05
GB1563408A (en) 1980-03-26
IN147667B (fr) 1980-05-24
JPS52109885A (en) 1977-09-14
US4095329A (en) 1978-06-20
FR2356282B1 (fr) 1982-12-10
NL186609C (nl) 1991-01-02
AU499285B2 (en) 1979-04-12
NL7613497A (nl) 1977-06-07
AU1883876A (en) 1978-04-27
NL186609B (nl) 1990-08-01

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ST Notification of lapse