FR2413791A1 - Fabrication de piles solaires - Google Patents
Fabrication de piles solairesInfo
- Publication number
- FR2413791A1 FR2413791A1 FR7834964A FR7834964A FR2413791A1 FR 2413791 A1 FR2413791 A1 FR 2413791A1 FR 7834964 A FR7834964 A FR 7834964A FR 7834964 A FR7834964 A FR 7834964A FR 2413791 A1 FR2413791 A1 FR 2413791A1
- Authority
- FR
- France
- Prior art keywords
- layer
- openings
- diffused regions
- conductivity
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/153—Solar cells-implantations-laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
SUR LA SURFACE D'UN SUBSTRAT SEMI-CONDUCTEUR 2 D'UN PREMIER TYPE DE CONDUCTIVITE, ON FORME UNE COUCHE CONTINUE 4 D'UN MATERIAU CONTENANT UN DOPANT CAPABLE DE FORMER UNE REGION 12 D'UN SECOND TYPE DE CONDUCTIVITE. UNE COUCHE 5 D'OXYDE NON DOPE EST DEPOSEE SUR LA COUCHE 4. DES OUVERTURES 6 SONT PRATIQUEES PAR ATTAQUE CHIMIQUE DES COUCHES 4 ET 5. LE SUBSTRAT EST ENSUITE CHAUFFE DANS UNE ATMOSPHERE CONTENANT LE DOPANT DE MANIERE A FORMER A PARTIR DE LA COUCHE 4 ET DE L'ATMOSPHERE DES REGIONS DIFFUSEES RELATIVEMENT EPAISSES 10 DANS L'ALIGNEMENT DES OUVERTURES 4 ET DES REGIONS DIFFUSEES RELATIVEMENT SUPERFICIELLES 12 DANS L'ALIGNEMENT DES PARTIES SITUEES ENTRE LES OUVERTURES 4, CES REGIONS FORMANT UNE JONCTION. DES CONTACTS CONDUCTEURS SONT ENFIN FORMES SUR LA SURFACE EPOUSANT LA FORME DES REGIONS DIFFUSEES PROFONDES QU'ILS RECOUVRENT. APPLICATIONS: PILES SOLAIRES PHOTOVOLTAIQUES A SEMI-CONDUCTEUR.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/865,953 US4152824A (en) | 1977-12-30 | 1977-12-30 | Manufacture of solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2413791A1 true FR2413791A1 (fr) | 1979-07-27 |
FR2413791B1 FR2413791B1 (fr) | 1984-12-14 |
Family
ID=25346596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7834964A Granted FR2413791A1 (fr) | 1977-12-30 | 1978-12-12 | Fabrication de piles solaires |
Country Status (10)
Country | Link |
---|---|
US (1) | US4152824A (fr) |
JP (1) | JPS5498189A (fr) |
AU (1) | AU521800B2 (fr) |
CA (1) | CA1114050A (fr) |
DE (1) | DE2856797A1 (fr) |
FR (1) | FR2413791A1 (fr) |
GB (1) | GB2012107B (fr) |
IL (1) | IL55866A (fr) |
IN (1) | IN150245B (fr) |
NL (1) | NL7812620A (fr) |
Families Citing this family (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4198262A (en) * | 1979-03-29 | 1980-04-15 | Atlantic Richfield Company | Solar cell manufacture |
EP0018744B1 (fr) * | 1979-05-01 | 1984-07-18 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Détecteurs de rayonnement |
US4255212A (en) * | 1979-07-02 | 1981-03-10 | The Regents Of The University Of California | Method of fabricating photovoltaic cells |
US4321283A (en) * | 1979-10-26 | 1982-03-23 | Mobil Tyco Solar Energy Corporation | Nickel plating method |
JPS5927579A (ja) * | 1982-08-04 | 1984-02-14 | Hoxan Corp | 太陽電池の製造方法 |
GB2130793B (en) * | 1982-11-22 | 1986-09-03 | Gen Electric Co Plc | Forming a doped region in a semiconductor body |
US4451969A (en) * | 1983-01-10 | 1984-06-05 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
DE3490600T1 (de) * | 1983-12-19 | 1985-11-28 | Mobil Solar Energy Corp., Waltham, Mass. | Verfahren zur Herstellung von Solarzellen |
AU574761B2 (en) * | 1983-12-19 | 1988-07-14 | Mobil Solar Energy Corp. | Method of fabricating solar cells |
US4650695A (en) * | 1985-05-13 | 1987-03-17 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
US4818337A (en) * | 1986-04-11 | 1989-04-04 | University Of Delaware | Thin active-layer solar cell with multiple internal reflections |
JPS6445176A (en) * | 1987-08-14 | 1989-02-17 | Hitachi Ltd | Manufacture of solar cell element |
US5075259A (en) * | 1989-08-22 | 1991-12-24 | Motorola, Inc. | Method for forming semiconductor contacts by electroless plating |
US5110369A (en) * | 1990-10-24 | 1992-05-05 | Mobil Solar Energy Corporation | Cable interconnections for solar cell modules |
US5225372A (en) * | 1990-12-24 | 1993-07-06 | Motorola, Inc. | Method of making a semiconductor device having an improved metallization structure |
US5112409A (en) * | 1991-01-23 | 1992-05-12 | Solarex Corporation | Solar cells with reduced recombination under grid lines, and method of manufacturing same |
JPH0812849B2 (ja) * | 1991-05-31 | 1996-02-07 | 株式会社日立製作所 | 太陽電池の製造方法 |
US5424570A (en) * | 1992-01-31 | 1995-06-13 | Sgs-Thomson Microelectronics, Inc. | Contact structure for improving photoresist adhesion on a dielectric layer |
US5270248A (en) * | 1992-08-07 | 1993-12-14 | Mobil Solar Energy Corporation | Method for forming diffusion junctions in solar cell substrates |
US6153501A (en) | 1998-05-19 | 2000-11-28 | Micron Technology, Inc. | Method of reducing overetch during the formation of a semiconductor device |
US5498570A (en) * | 1994-09-15 | 1996-03-12 | Micron Technology Inc. | Method of reducing overetch during the formation of a semiconductor device |
DE19522539C2 (de) * | 1995-06-21 | 1997-06-12 | Fraunhofer Ges Forschung | Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben |
US5716873A (en) * | 1996-05-06 | 1998-02-10 | Micro Technology, Inc. | Method for cleaning waste matter from the backside of a semiconductor wafer substrate |
US6051501A (en) * | 1996-10-09 | 2000-04-18 | Micron Technology, Inc. | Method of reducing overetch during the formation of a semiconductor device |
US6552414B1 (en) | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
EP0851511A1 (fr) * | 1996-12-24 | 1998-07-01 | IMEC vzw | Dispositif semi-conducteur avec deux régions diffusées sélectivement |
DE19910816A1 (de) | 1999-03-11 | 2000-10-05 | Merck Patent Gmbh | Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern |
NL1012961C2 (nl) * | 1999-09-02 | 2001-03-05 | Stichting Energie | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
DE10021440A1 (de) * | 2000-05-03 | 2001-11-15 | Univ Konstanz | Verfahren zur Herstellung einer Solarzelle und nach diesem Verfahren hergestellte Solarzelle |
WO2002019390A2 (fr) * | 2000-08-31 | 2002-03-07 | Chemtrace, Inc. | Nettoyage de parties des chambres d'équipement de traitement de semi-conducteurs au moyen de solvants organiques |
US20040005468A1 (en) * | 2002-07-03 | 2004-01-08 | Steinecker Carl P. | Method of providing a metallic contact on a silicon solar cell |
US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
JP4232597B2 (ja) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
US8502064B2 (en) * | 2003-12-11 | 2013-08-06 | Philip Morris Usa Inc. | Hybrid system for generating power |
US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
US7790574B2 (en) * | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
JP4481869B2 (ja) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法 |
DE102006003283A1 (de) * | 2006-01-23 | 2007-07-26 | Gp Solar Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen |
EP1843389B1 (fr) * | 2006-04-04 | 2008-08-13 | SolarWorld Industries Deutschland GmbH | Procédé de dopage au moyen de diffusion, oxydation superficielle et rétrogravure ainsi que procédé de fabrication d'une cellule solaire |
JP2008066437A (ja) * | 2006-09-06 | 2008-03-21 | Mitsubishi Heavy Ind Ltd | 太陽電池パネルの製造方法 |
CA2568136C (fr) * | 2006-11-30 | 2008-07-29 | Tenxc Wireless Inc. | Implementation de matrice de butler |
WO2008080160A1 (fr) * | 2006-12-22 | 2008-07-03 | Advent Solar, Inc. | Technologies d'interconnexion pour cellules et modules solaires à contact arrière |
GB2449504A (en) * | 2007-05-25 | 2008-11-26 | Renewable Energy Corp Asa | Photovoltaic module with reflective V-grooves |
WO2009029901A1 (fr) * | 2007-08-31 | 2009-03-05 | Applied Materials, Inc. | Module de chaîne de production pour former des dispositifs photovoltaïques de plusieurs tailles |
US20100047954A1 (en) * | 2007-08-31 | 2010-02-25 | Su Tzay-Fa Jeff | Photovoltaic production line |
DE102007051725B4 (de) * | 2007-10-27 | 2014-10-30 | Centrotherm Photovoltaics Ag | Verfahren zur Kontaktierung von Solarzellen |
WO2009064870A2 (fr) * | 2007-11-13 | 2009-05-22 | Advent Solar, Inc. | Procédés de fabrication de photopiles à contact arrière du type à texture et émetteur sélectif |
US20090139568A1 (en) * | 2007-11-19 | 2009-06-04 | Applied Materials, Inc. | Crystalline Solar Cell Metallization Methods |
CN101889348B (zh) * | 2007-11-19 | 2013-03-27 | 应用材料公司 | 使用图案化蚀刻剂物质以形成太阳能电池接点的工艺 |
US20090188603A1 (en) * | 2008-01-25 | 2009-07-30 | Applied Materials, Inc. | Method and apparatus for controlling laminator temperature on a solar cell |
DE102008017647A1 (de) * | 2008-04-04 | 2009-10-29 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
DE102008019402A1 (de) * | 2008-04-14 | 2009-10-15 | Gebr. Schmid Gmbh & Co. | Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat |
TWI390747B (zh) * | 2008-04-29 | 2013-03-21 | Applied Materials Inc | 使用單石模組組合技術製造的光伏打模組 |
US20100116942A1 (en) * | 2008-06-09 | 2010-05-13 | Fitzgerald Eugene A | High-efficiency solar cell structures |
EP2304803A1 (fr) * | 2008-06-11 | 2011-04-06 | Solar Implant Technologies Inc. | Fabrication de cellule solaire à l aide d une implantation |
WO2010009295A2 (fr) * | 2008-07-16 | 2010-01-21 | Applied Materials, Inc. | Confection de cellules solaires hybrides à hétérojonction à l’aide d’un masque en couche métallique |
US7951637B2 (en) * | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
JP5344872B2 (ja) * | 2008-08-27 | 2013-11-20 | 三菱電機株式会社 | 光起電力装置 |
TWI371115B (en) * | 2008-09-16 | 2012-08-21 | Gintech Energy Corp | One-step diffusion method for fabricating a differential doped solar cell |
DE102009008786A1 (de) * | 2008-10-31 | 2010-06-10 | Bosch Solar Energy Ag | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
DE102008056456A1 (de) * | 2008-11-07 | 2010-06-17 | Centrotherm Photovoltaics Technology Gmbh | Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung |
US20110162703A1 (en) * | 2009-03-20 | 2011-07-07 | Solar Implant Technologies, Inc. | Advanced high efficientcy crystalline solar cell fabrication method |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
US8163587B2 (en) * | 2009-07-02 | 2012-04-24 | Innovalight, Inc. | Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles |
DE102009034087A1 (de) * | 2009-07-21 | 2011-01-27 | Solsol Gmbh | Verfahren zur Herstellung eines selektiven Solarzellenemitters |
US8574950B2 (en) * | 2009-10-30 | 2013-11-05 | International Business Machines Corporation | Electrically contactable grids manufacture |
US8796060B2 (en) | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
US8586862B2 (en) * | 2009-11-18 | 2013-11-19 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
US20110114147A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Wind Ltd. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
DE102009058786A1 (de) * | 2009-12-18 | 2011-06-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Verfahren zur Herstellung lokal strukturierter Halbleiterschichten |
US20110162701A1 (en) * | 2010-01-03 | 2011-07-07 | Claudio Truzzi | Photovoltaic Cells |
FR2959351B1 (fr) * | 2010-04-26 | 2013-11-08 | Photowatt Int | Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium |
DE102010016992B4 (de) * | 2010-05-18 | 2015-07-23 | Hanwha Q.CELLS GmbH | Herstellungsverfahren einer Halbleitervorrichtung |
US8981208B2 (en) | 2010-06-21 | 2015-03-17 | Lg Electronics Inc. | Solar cell |
KR101835293B1 (ko) * | 2010-09-03 | 2018-03-06 | 테트라썬, 아이엔씨. | 광학코팅의 부분적 리프트-오프에 의한 광기전력 장치의 미세라인 금속화 |
US8969122B2 (en) * | 2011-06-14 | 2015-03-03 | International Business Machines Corporation | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom |
WO2013070978A2 (fr) | 2011-11-08 | 2013-05-16 | Intevac, Inc. | Système et procédé de traitement de substrat |
US8679889B2 (en) * | 2011-12-21 | 2014-03-25 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
US8597970B2 (en) | 2011-12-21 | 2013-12-03 | Sunpower Corporation | Hybrid polysilicon heterojunction back contact cell |
TWI559563B (zh) * | 2011-12-21 | 2016-11-21 | 太陽電子公司 | 混合式多晶矽異質接面背接觸電池 |
CN104011882A (zh) | 2012-01-12 | 2014-08-27 | 应用材料公司 | 制造太阳能电池装置的方法 |
DE102012200559A1 (de) * | 2012-01-16 | 2013-07-18 | Deutsche Cell Gmbh | Verfahren zur Herstellung eines Emitters einer Solarzelle und Solarzelle |
KR20140142690A (ko) * | 2012-03-30 | 2014-12-12 | 데이진 가부시키가이샤 | 반도체 적층체 및 그 제조 방법, 반도체 디바이스의 제조 방법, 반도체 디바이스, 도펀트 조성물, 도펀트 주입층, 그리고 도프층의 형성 방법 |
KR20140011462A (ko) * | 2012-07-18 | 2014-01-28 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
BR102012030606B1 (pt) * | 2012-11-30 | 2021-02-09 | União Brasileira De Educação E Assistência - Mantenedora Da Puc Rs | processo de difusão de dopantes em lâminas de silício para a fabricação de células solares |
WO2014100506A1 (fr) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grille pour implantation ionique par plasma |
FR3002545B1 (fr) * | 2013-02-22 | 2016-01-08 | Alchimer | Procede de formation d'un siliciure metallique a l'aide d'une solution contenant des ions or et des ions fluor |
US9455368B2 (en) * | 2014-07-03 | 2016-09-27 | Varian Semiconductor Equipment Associates, Inc. | Method of forming an interdigitated back contact solar cell |
JPWO2016111132A1 (ja) * | 2015-01-07 | 2017-04-27 | 三菱電機株式会社 | 太陽電池の製造方法 |
FR3035740B1 (fr) * | 2015-04-28 | 2017-05-12 | Commissariat Energie Atomique | Procede de fabrication d'une cellule photovoltaique. |
FR3035741B1 (fr) * | 2015-04-28 | 2018-03-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une cellule photovoltaique. |
US9673341B2 (en) | 2015-05-08 | 2017-06-06 | Tetrasun, Inc. | Photovoltaic devices with fine-line metallization and methods for manufacture |
US10126656B2 (en) * | 2016-09-08 | 2018-11-13 | Goodrich Corporation | Apparatus and methods of electrically conductive optical semiconductor coating |
US10228495B2 (en) | 2016-09-08 | 2019-03-12 | Goodrich Corporation | Apparatus and methods of electrically conductive optical semiconductor coating |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2080611A1 (fr) * | 1970-02-19 | 1971-11-19 | Siemens Ag | |
FR2238251A1 (fr) * | 1973-07-03 | 1975-02-14 | Telecommunications Sa | |
FR2246066A1 (fr) * | 1973-09-17 | 1975-04-25 | Ibm | |
US4029518A (en) * | 1974-11-20 | 1977-06-14 | Sharp Kabushiki Kaisha | Solar cell |
US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3492167A (en) * | 1966-08-26 | 1970-01-27 | Matsushita Electric Ind Co Ltd | Photovoltaic cell and method of making the same |
US3841928A (en) * | 1969-06-06 | 1974-10-15 | I Miwa | Production of semiconductor photoelectric conversion target |
-
1977
- 1977-12-30 US US05/865,953 patent/US4152824A/en not_active Expired - Lifetime
-
1978
- 1978-10-31 CA CA315,184A patent/CA1114050A/fr not_active Expired
- 1978-11-03 IN IN791/DEL/78A patent/IN150245B/en unknown
- 1978-11-03 AU AU41336/78A patent/AU521800B2/en not_active Expired
- 1978-11-03 IL IL55866A patent/IL55866A/xx unknown
- 1978-11-15 GB GB7844665A patent/GB2012107B/en not_active Expired
- 1978-12-12 FR FR7834964A patent/FR2413791A1/fr active Granted
- 1978-12-28 NL NL7812620A patent/NL7812620A/xx not_active Application Discontinuation
- 1978-12-29 JP JP16451378A patent/JPS5498189A/ja active Pending
- 1978-12-29 DE DE19782856797 patent/DE2856797A1/de not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2080611A1 (fr) * | 1970-02-19 | 1971-11-19 | Siemens Ag | |
FR2238251A1 (fr) * | 1973-07-03 | 1975-02-14 | Telecommunications Sa | |
FR2246066A1 (fr) * | 1973-09-17 | 1975-04-25 | Ibm | |
US4029518A (en) * | 1974-11-20 | 1977-06-14 | Sharp Kabushiki Kaisha | Solar cell |
US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
Also Published As
Publication number | Publication date |
---|---|
DE2856797A1 (de) | 1979-07-12 |
IN150245B (fr) | 1982-08-21 |
CA1114050A (fr) | 1981-12-08 |
GB2012107B (en) | 1982-05-12 |
IL55866A0 (en) | 1979-01-31 |
GB2012107A (en) | 1979-07-18 |
FR2413791B1 (fr) | 1984-12-14 |
NL7812620A (nl) | 1979-07-03 |
JPS5498189A (en) | 1979-08-02 |
IL55866A (en) | 1981-09-13 |
US4152824A (en) | 1979-05-08 |
AU4133678A (en) | 1979-07-05 |
AU521800B2 (en) | 1982-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2413791A1 (fr) | Fabrication de piles solaires | |
FR2363898A1 (fr) | Pile solaire et procede pour la fabrication de celle-ci | |
FR2455363A1 (fr) | Procede continu de fabrication de cellules solaires et produit ainsi obtenu | |
US3686036A (en) | Solar cell with metal layered contact and method of manufacture | |
JPS56100486A (en) | Photoelectric conversion element | |
JPS57188105A (en) | Electret constituent | |
JPS5681982A (en) | Power phototransistor | |
JPS5661175A (en) | Thin-film solar cell | |
JPS5567161A (en) | Semiconductor memory storage | |
JPS55158680A (en) | Solar cell and manufacture thereof | |
GB2160360A (en) | Method of fabricating solar cells | |
JPS5578571A (en) | Manufacture of semiconductor device | |
JPS5541751A (en) | Manufacturing semiconductor device | |
JPS54101278A (en) | Manufacture for semiconductor device | |
JPS5493366A (en) | Bipolar type transistor | |
JPS5633855A (en) | Semiconductor device and its manufacture | |
JPS5583230A (en) | Producing semiconductor device | |
JPS56122162A (en) | Semiconductor device and manufacture thereof | |
GB2162998A (en) | Method of fabricating solar cells | |
JPS5768022A (en) | Manufacture of compound semiconductor device | |
JPS5578568A (en) | Manufacture of semiconductor device | |
JPS5489477A (en) | Production of semiconductor device | |
JPS5723221A (en) | Manufacture of semiconductor device | |
JPS57184219A (en) | Manufacture of semiconductor device | |
JPS6468976A (en) | Manufacture of semiconductor radiation detector |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |