GB2130793B - Forming a doped region in a semiconductor body - Google Patents

Forming a doped region in a semiconductor body

Info

Publication number
GB2130793B
GB2130793B GB08330342A GB8330342A GB2130793B GB 2130793 B GB2130793 B GB 2130793B GB 08330342 A GB08330342 A GB 08330342A GB 8330342 A GB8330342 A GB 8330342A GB 2130793 B GB2130793 B GB 2130793B
Authority
GB
United Kingdom
Prior art keywords
forming
doped region
semiconductor body
semiconductor
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08330342A
Other versions
GB8330342D0 (en
GB2130793A (en
Inventor
Michael Joseph Kelly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB08330342A priority Critical patent/GB2130793B/en
Publication of GB8330342D0 publication Critical patent/GB8330342D0/en
Publication of GB2130793A publication Critical patent/GB2130793A/en
Application granted granted Critical
Publication of GB2130793B publication Critical patent/GB2130793B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08330342A 1982-11-22 1983-11-14 Forming a doped region in a semiconductor body Expired GB2130793B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08330342A GB2130793B (en) 1982-11-22 1983-11-14 Forming a doped region in a semiconductor body

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8233245 1982-11-22
GB08330342A GB2130793B (en) 1982-11-22 1983-11-14 Forming a doped region in a semiconductor body

Publications (3)

Publication Number Publication Date
GB8330342D0 GB8330342D0 (en) 1983-12-21
GB2130793A GB2130793A (en) 1984-06-06
GB2130793B true GB2130793B (en) 1986-09-03

Family

ID=26284463

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08330342A Expired GB2130793B (en) 1982-11-22 1983-11-14 Forming a doped region in a semiconductor body

Country Status (1)

Country Link
GB (1) GB2130793B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0779136B2 (en) * 1986-06-06 1995-08-23 株式会社日立製作所 Semiconductor device
JPH0644559B2 (en) * 1987-09-04 1994-06-08 株式会社東芝 Method for manufacturing semiconductor integrated circuit
US5284793A (en) * 1989-11-10 1994-02-08 Kabushiki Kaisha Toshiba Method of manufacturing radiation resistant semiconductor device
JPH04199507A (en) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp Solid phase diffusion of n-type impurity to iii-v compound semiconductor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99619C (en) * 1955-06-28
NL6706005A (en) * 1967-04-28 1968-10-29
US3485685A (en) * 1967-05-31 1969-12-23 Bell Telephone Labor Inc Method and source composition for reproducible diffusion of zinc into gallium arsenide
US3764411A (en) * 1970-06-23 1973-10-09 Gen Electric Glass melt through diffusions
GB1503017A (en) * 1974-02-28 1978-03-08 Tokyo Shibaura Electric Co Method of manufacturing semiconductor devices
DE2449688C3 (en) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for producing a doped zone of one conductivity type in a semiconductor body
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells

Also Published As

Publication number Publication date
GB8330342D0 (en) 1983-12-21
GB2130793A (en) 1984-06-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee