GB8330342D0 - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB8330342D0 GB8330342D0 GB838330342A GB8330342A GB8330342D0 GB 8330342 D0 GB8330342 D0 GB 8330342D0 GB 838330342 A GB838330342 A GB 838330342A GB 8330342 A GB8330342 A GB 8330342A GB 8330342 D0 GB8330342 D0 GB 8330342D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08330342A GB2130793B (en) | 1982-11-22 | 1983-11-14 | Forming a doped region in a semiconductor body |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8233245 | 1982-11-22 | ||
GB08330342A GB2130793B (en) | 1982-11-22 | 1983-11-14 | Forming a doped region in a semiconductor body |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8330342D0 true GB8330342D0 (en) | 1983-12-21 |
GB2130793A GB2130793A (en) | 1984-06-06 |
GB2130793B GB2130793B (en) | 1986-09-03 |
Family
ID=26284463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08330342A Expired GB2130793B (en) | 1982-11-22 | 1983-11-14 | Forming a doped region in a semiconductor body |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2130793B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0779136B2 (en) * | 1986-06-06 | 1995-08-23 | 株式会社日立製作所 | Semiconductor device |
JPH0644559B2 (en) * | 1987-09-04 | 1994-06-08 | 株式会社東芝 | Method for manufacturing semiconductor integrated circuit |
US5284793A (en) * | 1989-11-10 | 1994-02-08 | Kabushiki Kaisha Toshiba | Method of manufacturing radiation resistant semiconductor device |
JPH04199507A (en) * | 1990-11-28 | 1992-07-20 | Mitsubishi Electric Corp | Solid phase diffusion of n-type impurity to iii-v compound semiconductor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE548647A (en) * | 1955-06-28 | |||
NL6706005A (en) * | 1967-04-28 | 1968-10-29 | ||
US3485685A (en) * | 1967-05-31 | 1969-12-23 | Bell Telephone Labor Inc | Method and source composition for reproducible diffusion of zinc into gallium arsenide |
US3764411A (en) * | 1970-06-23 | 1973-10-09 | Gen Electric | Glass melt through diffusions |
GB1503017A (en) * | 1974-02-28 | 1978-03-08 | Tokyo Shibaura Electric Co | Method of manufacturing semiconductor devices |
DE2449688C3 (en) * | 1974-10-18 | 1980-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for producing a doped zone of one conductivity type in a semiconductor body |
US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
-
1983
- 1983-11-14 GB GB08330342A patent/GB2130793B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2130793B (en) | 1986-09-03 |
GB2130793A (en) | 1984-06-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |