GB2130793A - Forming a doped region in a semiconductor body - Google Patents
Forming a doped region in a semiconductor body Download PDFInfo
- Publication number
- GB2130793A GB2130793A GB08330342A GB8330342A GB2130793A GB 2130793 A GB2130793 A GB 2130793A GB 08330342 A GB08330342 A GB 08330342A GB 8330342 A GB8330342 A GB 8330342A GB 2130793 A GB2130793 A GB 2130793A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloy
- doped region
- layer
- amorphous
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000002019 doping agent Substances 0.000 claims abstract description 24
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- FEBJSGQWYJIENF-UHFFFAOYSA-N nickel niobium Chemical compound [Ni].[Nb] FEBJSGQWYJIENF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001257 Nb alloy Inorganic materials 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000011521 glass Substances 0.000 claims abstract description 3
- 239000003870 refractory metal Substances 0.000 claims abstract description 3
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 claims description 2
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 2
- ATLAQRSQSGOMOU-UHFFFAOYSA-N niobium platinum Chemical compound [Nb].[Pt] ATLAQRSQSGOMOU-UHFFFAOYSA-N 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 229910001260 Pt alloy Inorganic materials 0.000 claims 1
- 229910052752 metalloid Inorganic materials 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Abstract
A doped region (9, 19) in a body (1, 15) of semiconductor material is formed by depositing on a surface of the semiconductor body (1, 15) a layer of an amorphous metallic alloy (7, 17) containing a quantity of a material, e.g. boron or arsenic, capable of acting as a dopant in the semiconductor material, and heating the layer (7, 17) to cause diffusion of the dopant material into the region (9, 19) of the semiconductor body (1, 15). The amorphous alloy may serve as an electrical contact (7) and may act as a barrier (17) to prevent diffusion of lead material (21) into the semiconductor body (1, 15). The amorphous alloy suitably comprises a metal-metal alloy such as nickel- niobium alloy, or a metal-metalloid glassy alloy such as silicide glass of a refractory metal. <IMAGE>
Description
SPECIFICATION
Semiconductor devices
This invention relates to semiconductor devices.
In the manufacture of semiconductor devices it is frequently required to form in a body of semiconductor material a region extending into the body from a surface thereof and containing a dopant material which serves to confer on the doped region electrical properties different from those of the surrounding material. A typical application of such a process is for the formation of source and drain regions in field effect transistors.
Many processes have been devised for forming such regions, but in general such processes essentially comprise covering the surface of the body with a masking layer, forming a window in the masking layer and causing dopant material to enter the body via the window, typically either by diffusion from an atmosphere above the surface or by ion implantation of dopant material into the part of the surface of the body exposed through the window and subsequent annealing to drive the dopant material further into the semiconductor body.
Having formed such a region it is normally required to provide an electrical contact thereto.
Conventionally, such contacts are in the form of metallised layers on the surface of the body which contact the doped region via a window in a layer of insulating material which carries the metallised layer and serves to insulate it from other parts of the semiconductor body.
For a variety of reasons it is frequently found to be quite difficult to obtain a satisfactory electrical connection between such a contact and the associated doped region. Thus such contacts may be subject to mechanical weakness, thermal instability, or to the effect of electro migration of material of the contact into the doped region.
It is an object of the present invention to provide a method of forming a doped region in a semi-conductor body whereby the above difficulties may be alleviated.
According to the present invention a method of forming a doped region in a body of semiconductor material comprises: depositing on a surface of the semiconductor body a layer of an amorphous metallic alloy containing a quantity of a material capable as acting as a dopant in the semiconductor material; and heating the layer to cause diffusion of the dopant material from said amorphous alloy into the semiconductor body.
The amorphous alloy suitably comprises a metal-metal alloy or a metal-metalloid glassy alloy.
In one particular embodiment of the invention the material of the amorphous alloy is chosen so that the alloy serves as an electric contact to the doped region.
Alternatively the method further includes the step of subsequently providing an electric contact
to the doped region in the form of a metal layer
which contacts the doped region via the
amorphous layer, the material of the amorphous
layer being chosen so as to serve as a barrier layer
between the doped region and the metal layer to
inhibit diffusion of material into the doped region
from the metal layer.
In a method according to the invention the
region into which dopant material is diffused may
already contain dopant material, the diffused
dopant material serving to improve the ohmic
contact between the alloy layer and the already
doped region.
Various methods in accordance with the
invention will now be described, by way of
example, with reference to the accompanying
drawings in which:~
Figure 1 is a diagram illustrating a first method;
Figure 2 is a graph illustrating a doping profile
obtained with the first method; and
Figure 3 is a diagram illustrating a second
method.
Referring to Figure 1, in the first method, the
starting material is an n-type silicon substrate 1.
On a main face of the substrate there is formed,
in conventional manner, a layer of silicon oxide 3 provided with a window 5 in register with a portion of the substrate where it is desired to form a doped region extending into the substrate from
its surface.
A layer 7 of an amorphous nickel-niobium alloy containing a few percent by weight of boron is then deposited on the exposed surface of the oxide layer and the substrate, the layer filling the window 5 and extending therefrom in a pattern corresponding to a required connection to the doped region to be formed.
The structure is then heated to cause outdiffusion of boron from the layer 7, thus forming a shallow region 9 of p-type doped material in the
region of the substrate defined by the window 5.
Typically the heat treatment is at a temperature of 900cm for 30 minutes, as is typically used for driving in ion-implanted dopants into a silicon substrate. It will be understood that the heat treatment may therefore conveniently be arranged also to effect drive in of material ion-implanted into other regions of the substrate to form other doped regions in conventional manner.
The relative diffusion of boron in nickel-niobium is six orders of magnitude greater than in silicon at the temperatures involved. Consequently, after the heat treatment the boron has a half Gaussian distribution in the substrate, as illustrated in Figure 2, with a peak value determined by the original boron concentration in the nickel-niobium alloy and a half width a determined by the diffusion constant of boron in silicon which, with a typical annealing schedule, will give a value for a of 0.05 #m.
Referring now to Figure 3, in the second method to be described, an oxide layer 11 provided with a window 13 is formed on a main face of an n-type silicon substrate 1 5, as in the first described method.
A layer 17 of nickel-niobium alloy containing boron is then formed in the region of the window 13 only, the layer being thin compared with the oxide layer 11.
After heat treatment, as in the first described method, to form a p-type region 19 in the substrate by out-diffusion of boron from the layer 17, an aluminium layer is deposited onto the surface of the structure and selectively etched to provide a lead 21 on the surface of the oxide layer which contacts the region 19 through the window 13 via the layer 17.
In addition to providing a source of dopant material for formation of the region 1 9, the layer 17 also acts as a barrier to prevent diffusion of aluminium from the lead 21 into the silicon.
Such a method may be used to enable the use of a metal for a contact to a doped region which would otherwise be unacceptable because of electro-migration problems.
In other methods in accordance with the invention the region into which dopant material is diffused from the amorphous metallic alloy layer may already contain dopant material, for example, by virtue of an earlier implantation process. Such a method may be used to improve the ohmic contact to a pre-existing doped region, the outdiffusion from the amorphous metallic alloy layer creating in the adjacent part of the pre-existing doped region a suitable sharp, narrow doping profile. Such a method may therefore be used as described above with reference to Figure 3 to enable the use of a metal for a contact to a preexisting doped region which would otherwise be unacceptable because of poor ohmic contact.
It will be understood that dopant materials other than boron may be used in a method according to the invention, for example, arsenic where an n-type dopant material is required.
Similarly, amorphous metal alloys other than nickel-niobium may be used in methods in accordance with the invention. However, it will be appreciated that an important requirement of the amorphous metal alloy in a method according to the invention is that it should consist of elements with low diffusion constants in the material of the semiconductor body. Other suitable metal-metal alloys are molybdenum-nickel, nickel-titanium and niobium-platinum. Other suitable alloys are glassy
metal-metalloid alloys such as the silicide glasses of refractory metals.
It will be understood that a method according to the invention is especially suitable for fabricating shallow doped regions in a semiconducoor body, for example the source and drain regions of MOS transistors in VLSI circuits.
Claims (15)
1. A method of forming a doped region in a body of semiconductor material comprising depositing on a surface of the semiconductor body a layer of an amorphous metallic alloy containing a quantity of a material capable as acting as a dopant in the semi-conductor material; and heating the layer to cause diffusion of the dopant material from said amorphous alloy into the semiconductor body.
2. A method according to Claim 1 wherein the amorphous alloy is chosen so that the alloy serves as an electric contact to the doped region.
3. A method according to Claim 1 further including the step of subsequently providing an electric contact to the doped region in the form of a metal layer which contacts the doped region via the amorphous layer, the material of the amorphous layer being chosen so as to serve as a barrier layer between the doped region and the metal layer to inhibit the diffusion of material into the doped region from the metal layer.
4. A method according to any one of the preceding claims wherein the region into which dopant material is diffused already contains dopant material, the diffused dopant material serving to improve the ohmic contact between the alloy layer and the already doped region.
5. A method according to any one of the preceding claims wherein said amorphous alloy is a metal-metal alloy.
6. A method according to Claim 5 wherein said amorphous alloy is a nickel-niobium alloy.
7. A method according to Claim 5 wherein said amorphous alloy is a molybdenum-nickel alloy.
8. A method according to Claim 5 wherein said amorphous alloy is a nickel-titanium alloy.
9. A method according to Claim 5 wherein said amorphous alloy is a niobium-platinum alloy.
10. A method according to any one of Claims 1 to 4 wherein said amorphous alloy is a metalmetalloid glassy alloy.
11. A method according to Claim 10 wherein said amorphous alloy is a silicide glass of a refractory metal.
12. A method according to any one of the preceding claims wherein said dopant material is boron.
13. A method according to any one of Claims 1 to 11 wherein said dopant material is arsenic.
14. A method of forming a doped region in a body of semiconductur material substantially as hereinbefore described with reference to Figure 1 or Figure 3 of the accompanying drawings.
15. A semiconductor body including a doped region formed by a method according to any one of the preceding claims.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08330342A GB2130793B (en) | 1982-11-22 | 1983-11-14 | Forming a doped region in a semiconductor body |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8233245 | 1982-11-22 | ||
| GB08330342A GB2130793B (en) | 1982-11-22 | 1983-11-14 | Forming a doped region in a semiconductor body |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8330342D0 GB8330342D0 (en) | 1983-12-21 |
| GB2130793A true GB2130793A (en) | 1984-06-06 |
| GB2130793B GB2130793B (en) | 1986-09-03 |
Family
ID=26284463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08330342A Expired GB2130793B (en) | 1982-11-22 | 1983-11-14 | Forming a doped region in a semiconductor body |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2130793B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0248445A2 (en) * | 1986-06-06 | 1987-12-09 | Hitachi, Ltd. | Semiconductor device having a diffusion barrier and process for its production |
| EP0305977A2 (en) * | 1987-09-04 | 1989-03-08 | Kabushiki Kaisha Toshiba | Method for doping a semiconductor integrated circuit |
| DE4139159A1 (en) * | 1990-11-28 | 1992-06-04 | Mitsubishi Electric Corp | METHOD FOR DIFFUSING N INTERFERENCE POINTS IN AIII-BV CONNECTION SEMICONDUCTORS |
| US5284793A (en) * | 1989-11-10 | 1994-02-08 | Kabushiki Kaisha Toshiba | Method of manufacturing radiation resistant semiconductor device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB816799A (en) * | 1955-06-28 | 1959-07-22 | Western Electric Co | Improvements in or relating to semi-conductor devices and to methods of making them |
| GB1227985A (en) * | 1967-05-31 | 1971-04-15 | ||
| GB1231103A (en) * | 1967-04-28 | 1971-05-12 | ||
| GB1345231A (en) * | 1970-06-23 | 1974-01-30 | Gen Electric | Semiconductor doping |
| GB1464801A (en) * | 1974-10-18 | 1977-02-16 | Siemens Ag | Production of doped zones of one conductivity type in semi conductor bodies |
| GB1503017A (en) * | 1974-02-28 | 1978-03-08 | Tokyo Shibaura Electric Co | Method of manufacturing semiconductor devices |
| GB2012107A (en) * | 1977-12-30 | 1979-07-18 | Mobil Tyco Solar Energy Corp | Manufacture of solar cells |
-
1983
- 1983-11-14 GB GB08330342A patent/GB2130793B/en not_active Expired
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB816799A (en) * | 1955-06-28 | 1959-07-22 | Western Electric Co | Improvements in or relating to semi-conductor devices and to methods of making them |
| GB1231103A (en) * | 1967-04-28 | 1971-05-12 | ||
| GB1227985A (en) * | 1967-05-31 | 1971-04-15 | ||
| GB1345231A (en) * | 1970-06-23 | 1974-01-30 | Gen Electric | Semiconductor doping |
| GB1503017A (en) * | 1974-02-28 | 1978-03-08 | Tokyo Shibaura Electric Co | Method of manufacturing semiconductor devices |
| GB1464801A (en) * | 1974-10-18 | 1977-02-16 | Siemens Ag | Production of doped zones of one conductivity type in semi conductor bodies |
| GB2012107A (en) * | 1977-12-30 | 1979-07-18 | Mobil Tyco Solar Energy Corp | Manufacture of solar cells |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0248445A2 (en) * | 1986-06-06 | 1987-12-09 | Hitachi, Ltd. | Semiconductor device having a diffusion barrier and process for its production |
| EP0248445A3 (en) * | 1986-06-06 | 1988-10-12 | Hitachi, Ltd. | Semiconductor device having a diffusion barrier and process for its production |
| US4965656A (en) * | 1986-06-06 | 1990-10-23 | Hitachi, Ltd. | Semiconductor device |
| EP0305977A2 (en) * | 1987-09-04 | 1989-03-08 | Kabushiki Kaisha Toshiba | Method for doping a semiconductor integrated circuit |
| EP0305977A3 (en) * | 1987-09-04 | 1990-11-22 | Kabushiki Kaisha Toshiba | Method for doping a semiconductor integrated circuit |
| US5284793A (en) * | 1989-11-10 | 1994-02-08 | Kabushiki Kaisha Toshiba | Method of manufacturing radiation resistant semiconductor device |
| DE4139159A1 (en) * | 1990-11-28 | 1992-06-04 | Mitsubishi Electric Corp | METHOD FOR DIFFUSING N INTERFERENCE POINTS IN AIII-BV CONNECTION SEMICONDUCTORS |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8330342D0 (en) | 1983-12-21 |
| GB2130793B (en) | 1986-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |