FR2455363A1 - Procede continu de fabrication de cellules solaires et produit ainsi obtenu - Google Patents

Procede continu de fabrication de cellules solaires et produit ainsi obtenu

Info

Publication number
FR2455363A1
FR2455363A1 FR7910883A FR7910883A FR2455363A1 FR 2455363 A1 FR2455363 A1 FR 2455363A1 FR 7910883 A FR7910883 A FR 7910883A FR 7910883 A FR7910883 A FR 7910883A FR 2455363 A1 FR2455363 A1 FR 2455363A1
Authority
FR
France
Prior art keywords
layer
solar cells
semiconductor material
continuous production
small grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7910883A
Other languages
English (en)
Other versions
FR2455363B1 (fr
Inventor
Czeslaw Deminet
William E Horne
Richard E Oettel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US05/702,416 priority Critical patent/US4152535A/en
Application filed by Boeing Co filed Critical Boeing Co
Priority to FR7910883A priority patent/FR2455363B1/fr
Priority to DE19792917564 priority patent/DE2917564A1/de
Publication of FR2455363A1 publication Critical patent/FR2455363A1/fr
Application granted granted Critical
Publication of FR2455363B1 publication Critical patent/FR2455363B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PROCEDE DE FABRICATION DE CELLULES SOLAIRES QUI UTILISENT UN MATERIAU SEMI-CONDUCTEUR COMME ELEMENT ACTIF, LE PROCEDE COMPRENANT LES ETAPES CONSISTANT: A FORMER UN SUBSTRAT; A FORMER UNE PREMIERE ELECTRODE; A DEPOSER UNE COUCHE DE MATERIAU SEMI-CONDUCTEUR DE SORTE QU'UNE DE SES SURFACES EST EN CONTACT OHMIQUE AVEC LADITE PREMIERE ELECTRODE, LADITE PREMIERE ELECTRODE ETANT PLACEE ENTRE LEDIT SUBSTRAT ET LADITE COUCHE DE SEMI-CONDUCTEUR; A RECRISTALLISER LADITE COUCHE DE SEMI-CONDUCTEUR DE FACON A AUGMENTER SUBSTANTIELLEMENT SA DIMENSION DE GRAINS JUSQU'AU POINT OU IL EST UTILISABLE DANS UNE CELLULE SOLAIRE; A FORMER UNE JONCTION PN DANS LADITE COUCHE DE SEMI-CONDUCTEUR RECRISTALLISE; ET A FORMER UNE SECONDE ELECTRODE DE SORTE QU'ELLE SOIT EN CONTACT OHMIQUE AVEC L'AUTRE SURFACE DE LA COUCHE DE SEMI-CONDUCTEUR RECRISTALLISE, LADITE CELLULE SOLAIRE AINSI PRODUITE POUVANT DONNER UN COURANT ELECTRIQUE DES QUE DE LA LUMIERE TOMBE SUR LADITE COUCHE DE SEMI-CONDUCTEUR RECRISTALLISE.
FR7910883A 1976-07-06 1979-04-27 Procede continu de fabrication de cellules solaires et produit ainsi obtenu Expired FR2455363B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US05/702,416 US4152535A (en) 1976-07-06 1976-07-06 Continuous process for fabricating solar cells and the product produced thereby
FR7910883A FR2455363B1 (fr) 1976-07-06 1979-04-27 Procede continu de fabrication de cellules solaires et produit ainsi obtenu
DE19792917564 DE2917564A1 (de) 1976-07-06 1979-04-30 Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US05/702,416 US4152535A (en) 1976-07-06 1976-07-06 Continuous process for fabricating solar cells and the product produced thereby
FR7910883A FR2455363B1 (fr) 1976-07-06 1979-04-27 Procede continu de fabrication de cellules solaires et produit ainsi obtenu
DE19792917564 DE2917564A1 (de) 1976-07-06 1979-04-30 Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende

Publications (2)

Publication Number Publication Date
FR2455363A1 true FR2455363A1 (fr) 1980-11-21
FR2455363B1 FR2455363B1 (fr) 1986-06-27

Family

ID=41508342

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7910883A Expired FR2455363B1 (fr) 1976-07-06 1979-04-27 Procede continu de fabrication de cellules solaires et produit ainsi obtenu

Country Status (3)

Country Link
US (1) US4152535A (fr)
DE (1) DE2917564A1 (fr)
FR (1) FR2455363B1 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264962A (en) * 1978-02-07 1981-04-28 Beam Engineering Kabushiki Kaisha Small-sized electronic calculator
US4234351A (en) * 1978-07-14 1980-11-18 The Boeing Company Process for fabricating glass-encapsulated solar cell arrays and the product produced thereby
US4525223A (en) * 1978-09-19 1985-06-25 Noboru Tsuya Method of manufacturing a thin ribbon wafer of semiconductor material
US4229231A (en) * 1978-10-13 1980-10-21 Massachusetts Institute Of Technology Method of forming a laminated ribbon structure
US4255208A (en) * 1979-05-25 1981-03-10 Ramot University Authority For Applied Research And Industrial Development Ltd. Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer
US4318938A (en) * 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4273950A (en) * 1979-05-29 1981-06-16 Photowatt International, Inc. Solar cell and fabrication thereof using microwaves
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
EP0053150A1 (fr) * 1980-06-13 1982-06-09 Establishment For Science And Technology Procede de fabrication d'une couche mince a structure orientee, dispositif pour la mise en oeuvre de ce procede et produits obtenus
US4379020A (en) * 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
JPS5717174A (en) * 1980-07-03 1982-01-28 Hitachi Ltd Semiconductor device
JPS57132372A (en) * 1981-02-09 1982-08-16 Univ Tohoku Manufacture of p-n junction type thin silicon band
US4383130A (en) * 1981-05-04 1983-05-10 Alpha Solarco Inc. Solar energy cell and method of manufacture
US4778478A (en) * 1981-11-16 1988-10-18 University Of Delaware Method of making thin film photovoltaic solar cell
US4400256A (en) * 1981-12-18 1983-08-23 Riley Leon H Method of making layered semiconductor laser
DE3247532A1 (de) * 1982-12-22 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer grossflaechige siliziumkoerper verwendbaren substraten aus mit kohlenstoff beschichteten siliziumdioxid-gewebe
JPS59217378A (ja) * 1983-05-25 1984-12-07 Semiconductor Energy Lab Co Ltd 光電変換装置
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
EP0197034A1 (fr) * 1984-10-16 1986-10-15 TODOROF, William J. Cellules photovoltaiques en alliage de silicium flexible multicouches a film mince
DE3813737A1 (de) * 1988-04-23 1989-11-02 Fraunhofer Ges Forschung Verfahren zum herstellen von solarzellen sowie spiegelofen zur durchfuehrung des verfahrens
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
AUPM982294A0 (en) * 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
JP2009539255A (ja) * 2006-05-31 2009-11-12 コーニング インコーポレイテッド 薄膜光起電構造および製造
US20070277874A1 (en) * 2006-05-31 2007-12-06 David Francis Dawson-Elli Thin film photovoltaic structure
US20070277875A1 (en) * 2006-05-31 2007-12-06 Kishor Purushottam Gadkaree Thin film photovoltaic structure
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
US20080295885A1 (en) * 2007-05-30 2008-12-04 Shing Man Lee Thick Crystalline Silicon Film On Large Substrates for Solar Applications
EP2171770A1 (fr) * 2007-06-20 2010-04-07 Cisel S.r.l. - Circuiti Stampati Per Applicazioni Elettroniche Module photovoltaïque et panneau modulaire fait avec celui-ci pour collecter de l'énergie solaire rayonnante et sa transformation en énergie électrique
US8145021B2 (en) * 2010-01-13 2012-03-27 Atomic Energy Council-Institute of Nuclear Research Cable for concentrating photovoltaic module
US8878048B2 (en) 2010-05-17 2014-11-04 The Boeing Company Solar cell structure including a silicon carrier containing a by-pass diode
US9130113B2 (en) 2012-12-14 2015-09-08 Tsmc Solar Ltd. Method and apparatus for resistivity and transmittance optimization in TCO solar cell films
US9105799B2 (en) * 2013-06-10 2015-08-11 Tsmc Solar Ltd. Apparatus and method for producing solar cells using light treatment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1029663A (en) * 1964-03-30 1966-05-18 Ibm Method of producing a group of crystals such as semiconductor crystals on a polycrystalline substrate
FR1556497A (fr) * 1967-02-17 1969-02-07
DE1933690A1 (de) * 1968-10-18 1970-04-30 Ibm Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten
US4034127A (en) * 1975-03-31 1977-07-05 Rca Corporation Method of forming and treating cadmium selenide photoconductive bodies
DE2659366A1 (de) * 1975-12-31 1977-07-14 Motorola Inc Verfahren zum modifizieren der kristallinen struktur einer schicht aus halbleitermaterial

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1029663A (en) * 1964-03-30 1966-05-18 Ibm Method of producing a group of crystals such as semiconductor crystals on a polycrystalline substrate
FR1556497A (fr) * 1967-02-17 1969-02-07
DE1933690A1 (de) * 1968-10-18 1970-04-30 Ibm Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten
US4034127A (en) * 1975-03-31 1977-07-05 Rca Corporation Method of forming and treating cadmium selenide photoconductive bodies
DE2659366A1 (de) * 1975-12-31 1977-07-14 Motorola Inc Verfahren zum modifizieren der kristallinen struktur einer schicht aus halbleitermaterial

Also Published As

Publication number Publication date
FR2455363B1 (fr) 1986-06-27
US4152535A (en) 1979-05-01
DE2917564A1 (de) 1980-11-06

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