JP4232597B2 - シリコン太陽電池セルとその製造方法 - Google Patents
シリコン太陽電池セルとその製造方法 Download PDFInfo
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- JP4232597B2 JP4232597B2 JP2003351473A JP2003351473A JP4232597B2 JP 4232597 B2 JP4232597 B2 JP 4232597B2 JP 2003351473 A JP2003351473 A JP 2003351473A JP 2003351473 A JP2003351473 A JP 2003351473A JP 4232597 B2 JP4232597 B2 JP 4232597B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 40
- 229910052710 silicon Inorganic materials 0.000 title claims description 40
- 239000010703 silicon Substances 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 39
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 27
- 229910052796 boron Inorganic materials 0.000 claims description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 19
- 239000011574 phosphorus Substances 0.000 claims description 19
- 238000010304 firing Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- 238000005247 gettering Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 244000060701 Kaempferia pandurata Species 0.000 description 1
- 235000016390 Uvaria chamae Nutrition 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (7)
- p型シリコン基板に、リンを拡散したn+層とボロンを拡散したp+層とを形成したn+pp+構造を有するシリコン太陽電池セルの製造方法において、
該シリコン太陽電池セルの製造方法が、
前記シリコン基板の裏側の面にボロンの拡散処理を行う、裏面ボロン拡散工程と、
該裏面ボロン拡散工程の後に行う、前記シリコン基板の表側の面にリンを拡散する、おもて面リン拡散工程と、
該おもて面リン拡散工程の後に行う、温度600℃以下で1時間以上のアニール処理を行う低温アニール工程と、を有することを特徴とするシリコン太陽電池セルの製造方法。 - 請求項1に記載のシリコン太陽電池セルの製造方法において、
前記低温アニール工程の後で行う電極印刷工程と、
該電極印刷工程の後に行う電極焼成工程とを有し、
該電極焼成工程が、ピーク温度700℃以下でピーク温度時間1分以下の温度条件で、電極を焼成することを特徴とするシリコン太陽電池セルの製造方法。 - p型シリコン基板の第1の面にリンを拡散したn+層と、該基板の第2の面にボロンを拡散したp+層とを形成したn+pp+構造を有するシリコン太陽電池セルにおいて、
該シリコン基板のn+pp+構造が、請求項1あるいは請求項2の何れかに記載の製造法によって製造されたものであり、
前記第1の面と、第2の面とにそれぞれグリッド状電極を備え、
該グリッド状電極がバスバー電極とフィンガー電極とを備えていることを特徴とするシリコン太陽電池セル。 - 請求項3に記載のシリコン太陽電池セルにおいて、前記シリコン太陽電池セルが両面受光型太陽電池セルであることを特徴とするシリコン太陽電池セル。
- 請求項3に記載のシリコン太陽電池セルにおいて、前記第1の面に形成したグリッド状電極と、前記第2の面に形成したグリッド状電極とが異なる形状であることを特徴とするシリコン太陽電池セル。
- 請求項3に記載のシリコン太陽電池セルにおいて、前記第1の面に形成したグリッド状電極の面積が第1の面で占める割合が、前記第2の面に形成したグリッド状電極の面積が第2の面で占める割合より小さいことを特徴とするシリコン太陽電池セル。
- 請求項3から請求項6の何れかに記載のシリコン太陽電池セルにおいて、前記フィンガー電極の幅が100μmより狭く、前記バスバー電極の幅が該フィンガー電極の幅の10倍より大きく、かつ前記フィンガー電極とバスバー電極とが接続する付根部で、前記フィンガー電極の幅が拡大していることを特徴とするシリコン太陽電池セル。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003351473A JP4232597B2 (ja) | 2003-10-10 | 2003-10-10 | シリコン太陽電池セルとその製造方法 |
US10/960,517 US7495167B2 (en) | 2003-10-10 | 2004-10-08 | Silicon solar cell and production method thereof |
DE102004049160.7A DE102004049160B4 (de) | 2003-10-10 | 2004-10-08 | Silicium-Solarzelle mit gitterförmigen Elektroden auf beiden Seiten des Siliciumsubstrats und Herstellverfahren für diese Silicium-Solarzelle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003351473A JP4232597B2 (ja) | 2003-10-10 | 2003-10-10 | シリコン太陽電池セルとその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005116906A JP2005116906A (ja) | 2005-04-28 |
JP4232597B2 true JP4232597B2 (ja) | 2009-03-04 |
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JP2003351473A Expired - Fee Related JP4232597B2 (ja) | 2003-10-10 | 2003-10-10 | シリコン太陽電池セルとその製造方法 |
Country Status (3)
Country | Link |
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US (1) | US7495167B2 (ja) |
JP (1) | JP4232597B2 (ja) |
DE (1) | DE102004049160B4 (ja) |
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