UA83887C2 - Спосіб виготовлення фотоелектричного перетворювача - Google Patents

Спосіб виготовлення фотоелектричного перетворювача

Info

Publication number
UA83887C2
UA83887C2 UAA200608171A UAA200608171A UA83887C2 UA 83887 C2 UA83887 C2 UA 83887C2 UA A200608171 A UAA200608171 A UA A200608171A UA A200608171 A UAA200608171 A UA A200608171A UA 83887 C2 UA83887 C2 UA 83887C2
Authority
UA
Ukraine
Prior art keywords
layer
face side
forming
production
substrate
Prior art date
Application number
UAA200608171A
Other languages
English (en)
Russian (ru)
Inventor
Олександра Миколаївна Шмирєва
Олександр Дмитрович Скуртул
Микола Миколайович Мельниченко
Вячеслав Олександрович Кочелап
Вадим Володимирович Наумов
Валентин Миколайович Голотюк
Дмитро Васильович Лукомський
Original Assignee
Вадим Володимирович Наумов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Вадим Володимирович Наумов filed Critical Вадим Володимирович Наумов
Priority to UAA200608171A priority Critical patent/UA83887C2/uk
Priority to PCT/UA2007/000020 priority patent/WO2008010782A1/en
Publication of UA83887C2 publication Critical patent/UA83887C2/uk

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

+(57)Винахід належить до засобів напівпровідникової оптоелектронної техніки, зокрема до технології виготовлення фотоелектричних перетворювачів - сонячних елементів на основі кремнію. Спосіб виготовлення фотоелектричного перетворювача на основі підкладки кремнію р-типу провідності включає операції створення на тильній поверхні підкладки шару р+-типу провідності, формування на лицьовій поверхні шару n-типу провідності з наступним формуванням контактів. Додатково вирощують шар поруватого кремнію, при цьому шар p+-типу провідності на тильній поверхні формують у процесі одночасної дифузії бору і фосфору із попередньо нанесених на тильну і лицьову поверхні підкладки боросилікатної і фосфоросилікатної емульсій, відповідно, з одночасним формуванням на лицьовій поверхні підкладки шару n+-типу провідності, потім вибірково видаляють шар n+-типу провідності, а шар n-типу провідності на лицьовій поверхні формують через шар поруватого кремнію. Винахід забезпечує підвищення ефективності та зменшення енергетичних витрат на виготовлення фотоелектричних перетворювачів.
UAA200608171A 2006-07-21 2006-07-21 Спосіб виготовлення фотоелектричного перетворювача UA83887C2 (uk)

Priority Applications (2)

Application Number Priority Date Filing Date Title
UAA200608171A UA83887C2 (uk) 2006-07-21 2006-07-21 Спосіб виготовлення фотоелектричного перетворювача
PCT/UA2007/000020 WO2008010782A1 (en) 2006-07-21 2007-03-30 The method of production of the photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAA200608171A UA83887C2 (uk) 2006-07-21 2006-07-21 Спосіб виготовлення фотоелектричного перетворювача

Publications (1)

Publication Number Publication Date
UA83887C2 true UA83887C2 (uk) 2008-08-26

Family

ID=38957037

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200608171A UA83887C2 (uk) 2006-07-21 2006-07-21 Спосіб виготовлення фотоелектричного перетворювача

Country Status (2)

Country Link
UA (1) UA83887C2 (uk)
WO (1) WO2008010782A1 (uk)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007036921A1 (de) * 2007-02-28 2008-09-04 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung von Siliziumsolarzellen
DE102010035582B4 (de) * 2010-08-27 2017-01-26 Universität Konstanz Verfahren zum Herstellen einer Solarzelle mit einer texturierten Frontseite sowie entsprechende Solarzelle
RU2469439C1 (ru) * 2011-06-23 2012-12-10 Общество с ограниченной ответственностью "Солнечный ветер" Способ изготовления солнечного элемента с двухсторонней чувствительностью
CN102925982B (zh) * 2012-11-15 2015-05-20 英利能源（中国）有限公司 一种太阳能电池及其扩散方法
FR3077930B1 (fr) * 2018-02-15 2021-08-06 Total Solar Int Dispositif photovoltaique ou photodetecteur de type emetteur passive contact arriere et procede de fabrication d'un tel dispositif
CN109378357B (zh) * 2018-09-06 2020-06-05 横店集团东磁股份有限公司 一种perc双面太阳电池湿法刻蚀工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2151449C1 (ru) * 1999-01-15 2000-06-20 Всероссийский научно-исследовательский институт электрификации сельского хозяйства Способ изготовления фотопреобразователей с пленкой пористого кремния
RU2210142C1 (ru) * 2002-04-17 2003-08-10 Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" Способ изготовления солнечного элемента с n+-p-p+ структурой
JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法

Also Published As

Publication number Publication date
WO2008010782A1 (en) 2008-01-24

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