UA83887C2 - Method for production of photoelectric converter - Google Patents

Method for production of photoelectric converter

Info

Publication number
UA83887C2
UA83887C2 UAA200608171A UAA200608171A UA83887C2 UA 83887 C2 UA83887 C2 UA 83887C2 UA A200608171 A UAA200608171 A UA A200608171A UA A200608171 A UAA200608171 A UA A200608171A UA 83887 C2 UA83887 C2 UA 83887C2
Authority
UA
Ukraine
Prior art keywords
layer
face side
forming
production
substrate
Prior art date
Application number
UAA200608171A
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Олександра Миколаївна Шмирєва
Олександр Дмитрович Скуртул
Микола Миколайович Мельниченко
Вячеслав Олександрович Кочелап
Вадим Володимирович Наумов
Валентин Миколайович Голотюк
Дмитро Васильович Лукомський
Original Assignee
Вадим Володимирович Наумов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Вадим Володимирович Наумов filed Critical Вадим Володимирович Наумов
Priority to UAA200608171A priority Critical patent/UA83887C2/en
Priority to PCT/UA2007/000020 priority patent/WO2008010782A1/en
Publication of UA83887C2 publication Critical patent/UA83887C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0284—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table comprising porous silicon as part of the active layer(s)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to semiconductor optoelectronic technique, in particular, to technique for manufacturing photoelectric converters – solar elements based on silicon, which transform solar energy and being used as effective energy sources. A method for production of a photoelectric converter based on a silicon substrate p-type of conductivity includes operation for forming p+- layer on a backside of plate, forming n-layer on the face side with further contacts forming. Additionally it is grown a layer of porous silicon, layer of p+-type on face side is formed during process of simultaneous diffusion of barium and phosphorus out of borosilicate and phosphorus-silicate emulsions previously deposited on the face side of substrate, accordingly, with simultaneously forming n-layer substrate on the face side, than n+-type conductivity layer is removed , n-layer is formed using a layer of porous silicon. The invention provides enhanced effectiveness and decrease in expenditure of energy for production of photoelectric converters.
UAA200608171A 2006-07-21 2006-07-21 Method for production of photoelectric converter UA83887C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
UAA200608171A UA83887C2 (en) 2006-07-21 2006-07-21 Method for production of photoelectric converter
PCT/UA2007/000020 WO2008010782A1 (en) 2006-07-21 2007-03-30 The method of production of the photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAA200608171A UA83887C2 (en) 2006-07-21 2006-07-21 Method for production of photoelectric converter

Publications (1)

Publication Number Publication Date
UA83887C2 true UA83887C2 (en) 2008-08-26

Family

ID=38957037

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200608171A UA83887C2 (en) 2006-07-21 2006-07-21 Method for production of photoelectric converter

Country Status (2)

Country Link
UA (1) UA83887C2 (en)
WO (1) WO2008010782A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007036921A1 (en) * 2007-02-28 2008-09-04 Centrotherm Photovoltaics Technology Gmbh Method for producing solar cells, involves applying boron glass on part of surface of silicon wafer, and applying boron glass as etching barrier during etching of silicon wafer in texture etching solution
DE102010035582B4 (en) * 2010-08-27 2017-01-26 Universität Konstanz Process for producing a solar cell with a textured front side and corresponding solar cell
RU2469439C1 (en) * 2011-06-23 2012-12-10 Общество с ограниченной ответственностью "Солнечный ветер" Method of making solar cell with double-sided sensitivity
CN102925982B (en) * 2012-11-15 2015-05-20 英利能源（中国）有限公司 Solar cell and diffusion method of solar cell
FR3077930B1 (en) * 2018-02-15 2021-08-06 Total Solar Int PHOTOVOLTAIC OR PHOTODETECTOR DEVICE OF THE REAR CONTACT PASSIVE EMITTER TYPE AND METHOD FOR MANUFACTURING SUCH A DEVICE
CN109378357B (en) * 2018-09-06 2020-06-05 横店集团东磁股份有限公司 Wet etching process for PERC double-sided solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2151449C1 (en) * 1999-01-15 2000-06-20 Всероссийский научно-исследовательский институт электрификации сельского хозяйства Method for producing photoelectric transducers with porous silicon film
RU2210142C1 (en) * 2002-04-17 2003-08-10 Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" Solar cell manufacturing process
JP4232597B2 (en) * 2003-10-10 2009-03-04 株式会社日立製作所 Silicon solar cell and manufacturing method thereof

Also Published As

Publication number Publication date
WO2008010782A1 (en) 2008-01-24

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