CN104781936A - 具有电镀的金属格栅的光伏器件 - Google Patents

具有电镀的金属格栅的光伏器件 Download PDF

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CN104781936A
CN104781936A CN201380052255.6A CN201380052255A CN104781936A CN 104781936 A CN104781936 A CN 104781936A CN 201380052255 A CN201380052255 A CN 201380052255A CN 104781936 A CN104781936 A CN 104781936A
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metal
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傅建明
J·B·衡
C·J·贝泰尔
徐征
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Silevo LLC
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Abstract

本发明的一种实施例提供了一种太阳能电池。该太阳能电池包含光伏结构以及位于光伏结构上方的正面金属格栅(300)。正面金属格栅还包含一个或多个电镀的金属层。正面金属格栅包含一个或多个指状线(302，304)，并且各个指状线的每个端部经由附加的金属线(306，308，314，316，318，320)耦接至相邻指状线的相应端部，从而确保各个指状线没有开口端。

Description

具有电镀的金属格栅的光伏器件
技术领域
本公开内容一般地涉及太阳能电池。更特别地，本公开内容涉及包含通过电镀技术制成的金属格栅的太阳能电池。
背景技术
由化石燃料的使用造成的负面环境影响以及化石燃料不断上升的成本已经导致迫切需要更清洁的、更廉价的可替代能源。在不同形式的可替代能源当中，太阳能因其清洁性和广泛的可用性而受到青睐。
太阳能电池利用光伏效应将光转换成电。现有若干基本的太阳能电池结构，包括单p-n结太阳能电池、p-i-n/n-i-p太阳能电池和多结太阳能电池。典型的单p-n结结构包含p型掺杂层和n型掺杂层。具有单p-n结的太阳能电池可以是同质结太阳能电池或异质结太阳能电池。如果p型掺杂层和n型掺杂层两者都由相似的材料(具有相等带隙的材料)制成，则该太阳能电池称为同质结太阳能电池。与此相比，异质结太阳能电池包含至少两个不同带隙的材料层。p-i-n/n-i-p结构包含p型掺杂层、n型掺杂层以及夹于p层与n层之间的本征(未掺杂的)半导体层(i层)。多结结构包含一个在另一个顶部地彼此堆叠的具有不同带隙的多个单结结构。
在太阳能电池内，光在p-n结附近被吸收，生成载流子。载流子扩散到p-n结内并且由内建电场分离，从而在器件和外部电路间产生电流。确定太阳电池的质量的重要度量是它的能量转换效率，该能量转换效率被定义为所转换的功率(从所吸收的光到电能)与在太阳能电池连接至电路时所收集的功率之比。
图1给出了说明基于晶体硅(c-Si)基板的示例性同质结太阳能电池(现有技术)的示意图。太阳能电池100包含正面银电极格栅102、抗反射层104、发射极层106、基板108和铝(Al)背面电极110。在图1中的箭头指示入射的太阳光。
在常规的基于c-Si的太阳能电池内，电流由正面银格栅102收集。要形成银格栅102，常规的方法涉及将银浆料(该银浆料通常包含Ag粒子、有机粘结剂和玻璃料)印刷到晶片上并且然后在700～800℃的温度下焙烧银浆料。银浆料的高温焙烧确保了在Ag与Si之间的良好接触，并且降低了银线的电阻率。焙烧后的银浆料的电阻率典型为5×10- 6～8×10-6ohm-cm，该电阻率比块体银的电阻率高得多。
除了高串联电阻之外，通过丝网印刷银浆料而获得的电极格栅还具有其他缺点，包括较高的材料成本、较宽的线宽，以及有限的线高。随着银价升高，银电极的材料成本已经超过了用于制造太阳能电池的处理成本的一半。以现有技术水平的印刷技术，银线典型地具有100～120微米的线宽，并且难以进一步缩小线宽。尽管喷墨印刷能够产生更窄的线，但是喷墨印刷存在其他问题，例如，低生产率。银线的高度同样受到印刷方法限制。一次印刷能够产生具有小于25微米的高度的银线。尽管多次印刷能够产生具有增大高度的线，但是它同样会增大线宽，这是高效率的太阳能电池所不希望的。类似地，Ag或Cu在印制银线上的电镀能够以增大的线宽为代价来增大线高。另外，这样的银线的电阻仍然过高以致无法满足高效率的太阳能电池的要求。
另一种解决方案是将Ni/Cu/Sn金属叠层直接电镀于Si发射极上。这种方法能够产生具有较低电阻的金属格栅(镀铜的电阻率典型为2×l0-6～3×l0-6ohm-cm)。但是，Ni对Si的粘附力小于理想值，并且来自金属叠层的应力可能会导致整个金属线的剥离。
发明内容
本发明的一种实施例提供一种太阳能电池。该太阳能电池包含光伏结构以及位于光伏结构上方的正面金属格栅。正面金属格栅还包含一个或多个电镀的金属层。正面金属格栅还包含一个或多个指状线(fingerlines)，并且各个指状线的每个端部经由附加的金属线耦接至相邻指状线的对应端部，从而确保各个指状线没有开口端。
在该实施例的一个变型中，附加的金属线位于太阳能电池的边缘附近并且具有比各个指状线的宽度大的宽度。
在该实施例的一个变型中，使在附加的金属线与各自的指状线之间的相交部成圆角或倒角。
在该实施例的一个变型中，金属格栅还包含位于电镀的金属层与光伏结构之间的金属粘附层。金属粘附层还包含下列项中的一项或多项：Cu、Al、Co、W、Cr、Mo、Ni、Ti、Ta、氮化钛(TiNx)、钛钨(TiWx)、硅化钛(TiSix)、氮化硅钛(TiSiN)、氮化钽(TaNx)、氮化硅钽(TaSiNx)、镍钒(NiV)、氮化钨(WNX)，以及它们的组合。
在另一个变型中，光伏结构包含透明导电氧化物(TCO)层，并且金属粘附层与TCO层直接接触。
在该实施例的一个变型中，电镀的金属层包含下列项中的一项或多项：Cu层、Ag层和Sn层。
在该实施例的一个变型中，金属格栅还包含位于电镀的金属层和光伏结构之间的金属籽晶层。
在另一个变型中，金属籽晶层使用包括蒸发沉积和溅射沉积之一的物理气相沉积(PVD)技术来形成。
在该实施例的一个变型中，各个指状线的预定边缘部分具有比各自指状线的中心部分的宽度大的宽度。
在该实施例的一个变型中，光伏结构包含基体层以及位于基体层上方的发射极层。发射极层包含下列项中的至少一项：位于基体层内的扩散有掺杂剂的区域、位于基体层上方的扩散有掺杂剂的多晶硅层，以及位于基体层上方的掺杂的非晶硅(a-Si)层。
在另一个变型中，掺杂剂包含下列项之一：磷和硼。
附图说明
图1给出了说明示例性太阳能电池(现有技术)的示意图。
图2给出了说明位于太阳能电池的前表面上的示例性的电镀金属格栅(现有技术)的示意图。
图3A给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。
图3B给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。
图3C给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。
图3D给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。
图4给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。
图5给出了说明根据本发明的一种实施例的用于制造太阳能电池的示例性过程的示意图。
在附图中，相同的附图标记指代相同的附图元件。
具体实施方式
下面的描述被给出以使本领域技术人员能够构造并使用实施例，并且在特定的应用及其要求的背景下被提供。所公开的实施例的各种改型对本领域技术人员而言将是明显的，并且本文所限定的一般原理在不脱离本公开内容的精神和范围的情况下可以应用于其他实施例和应用。因而，本发明并不限制于所示出的实施例，但应当符合与本文所公开的原理和特征一致的最宽广范围。
概述
本发明的实施例提供用于在包含电镀的金属格栅的太阳能电池内避免金属剥离的解决方案。该太阳能电池包含晶体硅(c-Si)基板、发射极层、钝化层、金属粘附层，以及正面和背面电极金属格栅。金属粘附层使用物理气相沉积(PVD)技术(例如，溅射或蒸发)来形成。正面金属格栅通过选择性地在金属粘附层上电镀出金属叠层来形成，该叠层能够是单层或多层结构。要减轻能够导致金属线剥离的应力，格栅图形被特别地设计以确保没有开口端或间断点存在。背面电极金属格栅能够使用被用来形成正面电极金属格栅的同一方法来形成。另外，还可以通过金属格栅的丝网印刷、电镀或气溶胶喷射印刷来形成背面电极。
电镀的金属格栅
用作太阳能电池电极的电镀的金属格栅已经展示出了比印刷的铝格栅低的电阻。但是，在电镀的金属线与下垫的(underlying)透明导电氧化物(TCO)层或半导体层之间的粘附力可能是个问题。即使引入了粘附层，随着电镀的金属线的厚度增加(以确保较低的电阻)，金属线剥离仍然会在应力过高时发生。金属线的剥离能够是累积于电镀金属与下垫结构(该下垫结构能够是TCO层或半导体结构)之间的界面处的应力的结果。在金属与硅基板之间的热膨胀系数差异以及太阳能电池所处的环境的热循环通常会导致这样的应力。如果应力大小超过由粘附层提供的粘附强度，则在金属与下垫层之间的接合将会开裂。
图2给出了说明位于太阳能电池的前表面上的示例性电镀的金属格栅(现有技术)的示意图。在图2中，金属格栅200包含多个指状条带(例如，指状条带202和204)以及母线206和208。注意，母线是与外部引线直接连接的较厚的金属条带，而指状条带是用于收集待输送给母线的光电流的较细的金属条带。
在设计太阳能电池时，为了减少因发射极电阻和遮光所致的损失，最好是设计高的金属高宽比。但是，指状线的高宽比通常受到用于形成金属格栅的制造技术限制。常规的印刷技术(例如，丝网印刷)通常会产生具有相对较低的高宽比的金属线。电镀技术能够产生具有较高的高宽比的金属线。但是，电镀的金属线在被放置于温度变化的环境中时可能会发生剥离。如同前面所讨论的，金属与硅基板之间的热膨胀系数的差异以及变化的温度能够导致应力累积以及在金属与下垫层之间的粘附最终开裂。即使开裂可能发生于单个位置，但是电镀金属(例如，镀铜)的良好韧性能够导致整个金属线剥离。
注意，应力的大小涉及金属线的高宽比；高宽比越大，应力就越大。因此，假定金属线具有均匀的宽度(该宽度能够在制造过程中受到很好控制)，则金属线的较厚部分将会遭受到更大的应力。对于电镀的金属格栅，由于发生于晶片的边缘处的电流拥挤效应，沉积于晶片边缘处的金属倾向于比沉积于晶片中心处的金属更厚。在图2所示的实例中，位于边缘区(例如，区域210和212)内的电镀金属倾向于具有较大的厚度。从图2中能够看出，常规的金属格栅200包含在边缘区210和212处具有开口端的指状条带。这些端部倾向于具有较大的厚度，并且因而可能会遭受到更大的热应力。
更糟糕的是，除了热应力之外，器件在太阳能模块的制造过程中的附加处理，例如，储存、跨接(tabbing)及串接(stringing)，同样能够导致金属格栅剥离。例如，在太阳能电池正由机器或人处理时，指状线可能会被其他对象(例如，不同晶片的边缘或者在堆叠于上方的晶片上的金属线)左右推动。巧合的是，指状条带的端部在抵抗外力方面通常是最弱的点。从图2中可看出，指状条带的端部不与金属线的其他部分连接，并且从而得到的支撑较少。在被左右推动时，指状条带的端部比指状条带的中部更容易从下垫层上裂开。一旦端部开裂，金属通常的良好韧性会导致整个金属线剥离。注意，金属剥离通常由于指状条带的高宽比高而发生于指状条带。另一方面，母线要宽得多并且通常不会发生剥离。
因此，要防止金属线剥离，重要的是加强在指状条带的端部与下垫层之间的接合。基于前面的分析，要加强在线端处的金属与下垫层之间的接合，能够降低端部的高度使其与线的剩余部分的高度相同。这样做的一种方式是增加末端区域的线宽。增大的线宽意味着所收集的电流现在分布于更大的区域内，从而减轻了在线端处的电流拥挤。但是，要避免遮光损失，线宽的增量必须要小，并且整体影响受到限制。另外，这仍然无法防止由外力导致的端部剥离。
本发明的实施例提供通过重新设计格栅图形而使指状条带对剥离的抵抗力更强的解决方案。图3A给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。在图3A中，金属格栅300包含多个水平取向的指状条带(例如，指状条带302和304)以及母线310和312。但是，与每个指状条带都是与其他指状条带不连接的线段的金属格栅200不同，在图3A中，每个指状条带的两个端点都连接至相邻的指状条带的端点。例如，指状条带302的端点经由两个短线306和308连接至指状条带304的端点。
注意，两个目标能够通过添加桥接两个相邻的指状条带的短线而同时实现。第一个目标是在电镀期间使电流于晶片边缘处转向，从而减小沉积于指状条带的端部的金属的厚度。与图2所示的实例相比，在只有一个指状物图形导电的电镀处理中，所添加的短线(例如，线306和308)能够促使原先集中于指状条带(例如，指状条带302和304)的尖端处的电流通过这些所添加的短线转移离开。因此，在指状条带的尖端处的电流密度被降低。这能够进一步导致沉积金属的更均匀的高度。增加的金属线的高度均匀性意味着在温度改变时于指状条带的端部将会有更小的额外应力累积。
通过附加的短线来实现的第二个目标是排除存在开口端。通过将在一个指状条带上的开口端点桥接到在相邻的指状条带上的端点，原先间断的指状条带变为没有任何开口端的连续的线。注意，如同前面所讨论的，开口端或间断端会在施加外力时由于缺少结构支撑而断裂。与此相比，在图3A所示的实例中，当外力被施加于指状条带302时，例如，当指状条带302被左右推动时，因为端部现在已连接至附加线306和308并由它们所支撑，所以指状条带302的端部不大可能从下垫层上裂开。注意，对端部的支撑由在那些附加线与下垫层之间的粘附力提供。开口端的消除还消除了在抵抗外力方面最弱的点。注意，因为母线不涉及金属剥离，所以没有必要消除母线上的开口端。在一种实施例中，母线的端部被配置为在晶片的上边缘和下边缘处与指状条带对齐，如图3A所示。换言之，母线的端部能够合并到末端的指状条带之内，这使得母线同样没有开口端。
通过同时提高厚度均匀性以及消除开口端，本发明的实施例有效地降低了指状条带剥离的可能性。除了图3A所示的实例之外，其他格栅图形同样能够被用来降低剥离的概率，只要它们在晶片边缘处添加额外的金属线并且指状条带由没有任何开口端的连续线构成。图3B给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。在所示的实例中图3B，短线被添加，不是用于仅创建两个相邻的指状条带之间的连接，而是用于连接超过两个的指状条带的端点。在图3B中，多个短线(例如，线314和316)被添加于晶片边缘处以使超过两个的指状条带耦接。像图3A所示的格栅图形那样，所产生的格栅图形包含没有开口端的连续的指状线。
图3C给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。在图3C中，在晶片的每个边缘上，垂直取向的长线，例如，线318和320，被添加用于将所有水平取向的指状条带的端点接合在一起。图3D给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。在图3D中，短线被交替地添加于两个相邻的指状条带之间的晶片的左边缘和右边缘(除了上边缘和下边缘外)，以确保指状条带的每个端点至少经由短的金属线耦接至相邻的指状条带的端点。注意，图3A-3D所示的指状物图形仅为示例，并且它们并非意指为穷尽性的或者将本发明限制于这些附图所公开的指状物图形。本发明的实施例能够包括在晶片边缘处添加金属线以连接不同的(otherwise)分立的指状条带的任意指状物图形。这样的附加线在减轻面向电镀的金属格栅的金属剥离问题方面起着重要作用，因为它们有助于使电流从指状条带的端部转向并且提供对指状条带的端部的结构支撑。
注意，尽管在晶片边缘处的附加线可以增加遮光，但是这样的影响在大多数情况下能够忽略不计。例如，在图3A中，附加线的整体影响能够等同于单个指状条带的添加。对于尺寸为125×125mm2的晶片，具有大约75μm的宽度的附加的指状条带仅增加大约0.05％的遮光，这是可忽略的。而且，附加的遮光还可以通过这些附加线所收集的附加电流来抵消。
在图3A-3D所示的实例中，在附加的垂直线与水平的指状条带连接的地方会造成尖角。这些尖角同样会积聚可能会导致金属断裂的横向应力。要进一步提高金属线的粘附力，在一种实施例中，指状条带通过具有圆角的线来连接。图4给出了说明根据本发明的一种实施例的位于太阳能电池的表面上的示例性的电镀金属格栅的示意图。在图4中，金属格栅400包括包含连续的、未断裂的线的指状条带。更特别地，每两个相邻的平行指状条带通过附加的短线在端部处接合在一起，以形成连续的回路。为进一步减小应力，在设计指状物图形时要避免平角或急转弯。例如，平角能够进行圆角化以具有弧形或者以直线形成倒角。在图4中，区域402和404示出了指状条带的弯转位置的示例性详细视图。
在区域402中示出的详细视图示出了圆弧被用来连接两个正交的金属线，一个是水平的指状条带，而另一个是用于桥接两个相邻的指状物的垂直短线。这会产生圆角。在一种实施例中，圆弧的半径能够为0.05mm至指状物间距的一半。注意，指状物间距能够为2～3mm。在区域404中示出的详细视图示出了倒角在转角处被形成以消除由这两个正交的金属线形成的直角。
在一种实施例中，在晶片边缘处的金属线，例如，用于连接两个相邻的指状条带的短线(包含圆角或倒角部分)被稍稍加宽以便在这些位置进一步降低电流密度。结果，在电镀期间，布置于那些边缘位置的金属的厚度被减小，并且所增加的接触面积还确保了在电镀金属与下垫层之间的更佳粘附。在图4中，区域406示出了指状条带的边缘部分的示例性的详细视图，表明边缘部分的宽度大于指状条带的中心部分的宽度。在一种实施例中，指状物的边缘部分的宽度能够比中心部分的宽度大至少20％～30％。在另一种实施例中，指状物的边缘部分的宽度能够高达0.2mm。这个加宽部分的长度(在图4中标示为L)能够为1～30mm。注意，加宽的指状物边缘越长，粘附就越佳，并且遮光影响就越大。在某些实施例中，在指状物的中心部分与指状物的加宽的边缘部分之间的界面可以逐渐变窄。
图5给出了说明根据本发明的一种实施例的用于制造太阳能电池的示例性过程的示意图。
在操作5A中，基板500被制备。在一种实施例中，基板500能够是晶体硅(c-Si)晶片。在另一种实施例中，制备c-Si基板500包括标准的切锯损伤蚀刻(该蚀刻去除损伤的硅外层)以及表面纹理化。c-Si基板500能够以n型或p型掺杂剂进行轻掺杂。在一种实施例中，c-Si基板500以p型掺杂剂进行轻掺杂。注意，除了c-Si外，其他材料(例如，冶金级Si)同样能够被用来形成基板500。
在操作5B中，掺杂的发射极层502被形成于c-Si基板500的顶部上。根据c-Si基板500的掺杂类型，发射极层502能够为n型掺杂的或者p型掺杂的。在一种实施例中，发射极层502以n型掺杂剂来掺杂。在另一种实施例中，发射极层502通过使磷扩散而形成。注意，如果磷扩散被用于形成发射极层502，则需要磷硅酸盐玻璃(PSG)蚀刻以及边缘隔离。用于形成发射极层502的其他方法同样是可能的。例如，一种方法能够首先在基板500的顶部上形成多晶硅层，并然后使掺杂剂扩散到多晶硅层内。掺杂剂能够包括磷或硼。而且，发射极层502同样能够通过在基板500的顶部上沉积掺杂的非晶硅(a-Si)层来形成。
在操作5C中，抗反射层504被形成于发射极层502的顶部上。在一种实施例中，抗反射层504包括(但不限于)：氮化硅(SiNx)、氧化硅(SiOx)、氧化钛(TiOx)、氧化铝(A12O3)，以及它们的组合。在一种实施例中，抗反射层504包括透明导电氧化物(TCO)材料层，例如，氧化铟锡(ITO)、氧化铝锌(AZO)、氧化镓锌(GZO)、掺钨氧化锌(IWO)，以及它们的组合。
在操作5D中，背面电极506被形成于Si基板500的背面上。在一种实施例中，形成背面电极506包括印刷全铝层以及通过焙烧进行的后续的合金化。在一种实施例中，形成背面电极506包括印刷Ag/Al格栅以及后续的炉烧。
在操作5E中，多个接触窗口(包括窗口508和510)形成于抗反射层504内。在一种实施例中，重掺杂区(例如，区域512和514)形成于发射极层502内，分别在接触窗口508和510的正下方。在另一种实施例中，接触窗口508和510以及重掺杂区512和514通过以下操作形成：将磷喷涂于抗反射层504上，随后是激光凹槽局部扩散处理。注意，操作5E是可任选的，并且在抗反射层504电绝缘时需要。如果抗反射层504导电(例如，当抗反射层504使用TCO材料来形成时)，则有必要形成接触窗口。
在操作5F中，金属粘附层516形成于抗反射层504上。在一种实施例中，用来形成粘附层516的材料包括(但不限于)：Ti、氮化钛(TiNX)、钛钨(TiWX)、硅化钛(TiSix)、氮化硅钛(TiSiN)、Ta、氮化钽(TaNx)、氮化硅钽(TaSiNx)、镍钒(NiV)、氮化钨(WNX)、Cu、Al、Co、W、Cr、Mo、Ni，以及它们的组合。在另一种实施例中，金属粘附层516使用物理气相沉积(PVD)技术(例如，溅射或蒸发)来形成。粘附层516的厚度能够为几纳米到100nm。注意，Ti及其合金倾向于形成与Si材料形成很好的粘附，并且它们能够与重掺杂区512和514形成良好的欧姆接触。在电镀处理之前于抗反射层504的顶部上形成金属粘附层514确保了后续形成的层与抗反射层504的更佳粘附。
在操作5G中，金属籽晶层518形成于粘附层516上。金属籽晶层518能够包含Cu或Ag。金属籽晶层518的厚度能够为5nm～500nm。在一种实施例中，金属籽晶层518具有100nm的厚度。像金属粘附层516一样，金属籽晶层518能够使用PVD技术来形成。在一种实施例中，用来形成金属籽晶层518的金属是用来形成第一电镀金属层的同一种金属。金属籽晶层提供了后续电镀的金属层的更佳粘附。例如，镀在铜上的铜通常具有比镀在其他材料上的铜更佳的粘附。
在操作5H中，图形化的掩蔽层520被沉积于金属籽晶层518的顶部上。掩蔽层520的开口，例如，开口522和524，对应于接触窗口508和510的位置，并从而位于重掺杂区512和514上方。注意，开口522和524略大于接触窗口508和510。掩蔽层520能够包括图形化的光刻胶层，该图形化的光刻胶层能够使用光刻技术来形成。在一种实施例中，光刻胶层通过将光刻胶丝网印刷于晶片的顶部上而形成。光刻胶然后被烘焙以去除熔剂。掩膜平铺于光刻胶上，并且晶片暴露于UV光。在UV曝光之后，掩膜被去除，并且光刻胶在光刻胶显影液中显影。开口522和524在显影之后形成。光刻胶同样能够通过喷涂、浸涂或帘式涂布来施加。干膜光刻胶同样能够被使用。作为选择，掩蔽层520能够包括图形化的氧化硅(SiO2)层。在一种实施例中，掩蔽层520通过使用低温等离子体增强的化学气相沉积(PECVD)技术来首先沉积SiO2层而形成。在另一种实施例中，掩蔽层520通过以下操作来形成：使用二氧化硅浆料来浸涂晶片的前表面，随后是丝网印刷包括氢氟酸或氟化物在内的蚀刻剂。其他掩蔽材料同样是可能的，只要该掩蔽材料是电绝缘的。
注意，掩蔽层520限定了正面的金属格栅的图形，因为在后续的电镀处理中金属材料只能够沉积于开口(例如，开口522和524)上方的由掩蔽层520限定的区域上。要确保较佳的厚度均匀性以及较佳的粘附，由掩蔽层520限定的图形包括以连续的非间断的线形成的指状条带。由掩蔽层520形成的示例性图形包括图3A-3D所示的图形。在另一种实施例中，用于限定靠近晶片边缘处定位的线的开口被加宽。在晶片边缘处的示例性图形包括图4所示的图形。图5G示出了根据本发明的一种实施例的图形化的掩蔽层的顶视图。在图5G中可看出，在晶片表面上的遮光区以掩蔽层520覆盖，因此不是导电的。开口使下垫的金属籽晶层518露出，该金属籽晶层518是导电的。在图5I所示的示例性图形中，具有较小宽度的开口限定了指状物图形，该指状物图形包含没有任何开口端的连续的线。另一方面，具有较大宽度的开口限定了母线，该母线可以包含具有开口端的线段，因为对母线来说不涉及金属剥离。
在操作5J中，一个或多个金属层被沉积于掩蔽层520的开口处，以形成正面金属格栅526。正面金属格栅526能够使用电镀技术来形成，该电镀技术能够包括电沉积、光诱导镀和/或化学沉积(electrolessdeposition)。在一种实施例中，金属籽晶层518和/或粘附层516经由电极耦接至电镀电源的阴极，该电镀电源能够为直流(DC)电源。金属籽晶层518以及包含开口的掩蔽层520被浸没于允许电流的电解质溶液中。注意，因为掩蔽层520是电绝缘的，所以金属将被选择性地沉积于开口内，从而形成具有与由那些开口所限定的图形对应的图形的金属格栅。根据形成金属籽晶层518的材料，正面金属格栅526能够使用铜或银来形成。例如，如果金属籽晶层518使用铜来形成，则正面金属格栅526同样使用铜来形成。另外，正面金属格栅526能够包括多层结构，例如，Cu/Sn双层结构或Cu/Ag双层结构。Sn或Ag顶层被沉积以辅助后续的焊接处理。当沉积铜时，在阳极处使用铜板，并且太阳能电池被浸没于适用于镀铜的电解液中。对于尺寸为125mm×125mm的晶片，用来镀铜的电流为0.1～2安培，并且铜层的厚度约为数十微米。在一种实施例中，电镀的金属层的厚度为30～50μm。
在操作5K中，掩蔽层520被去除。
在操作5L中，粘附层516的和金属籽晶层518的原先由掩蔽层520覆盖的部分被蚀刻掉，仅留下正面金属格栅526下方的部分。在一种实施例中，使用了湿法化学蚀刻工艺。注意，因为正面金属格栅526比粘附层516和金属籽晶层518厚得多(厚几个量级)，该蚀刻对正面金属格栅526的影响可以忽略。在一种实施例中，所产生的金属格栅的厚度能够为30～50μm。指状条带的宽度能够为10～100μm，而母线的厚度能够为0.5～2mm。而且，指状条带的间距能够为2～3mm。
在制造过程中，在金属粘附层和籽晶金属层形成之后，同样可以形成用于覆盖与接触窗口及重掺杂区的位置对应的区域的图形化的掩蔽层，并且可以蚀刻掉金属粘附层的和金属籽晶层的没有被图形化的掩蔽层覆盖的部分。在一种实施例中，金属粘附层及金属籽晶层的残留部分形成了与图3A-3D和图4所示的图形相似的图形。注意，这样的图形包括由连续的非间断的线构成的指状条带。一旦图形化的掩蔽层被去除，则一个或多个金属层能够被电镀到太阳能电池的表面上。在太阳能电池的表面上，只有金属籽晶层的残留部分的位置是导电的，电镀处理能够将金属选择性地沉积于金属籽晶层的残留部分的顶部上。
在图5所示的实例中，背面电极使用常规的印刷技术来形成(操作5D)。在实践中，背面电极同样能够通过将一个或多个金属层电镀于太阳能电池的背面上而形成。在一种实施例中，背面电极能够使用与操作5F-5L类似的操作来形成，这些操作包括在基板的背面上形成金属粘附层、金属籽晶层和图形化的掩蔽层。注意，背面上的图形化的掩蔽层限定了背面金属格栅的图形。在一种实施例中，背面金属格栅包含以连续的非间断的线形成的指状条带。在另一种实施例中，背面金属格栅可以包括图3A-3D和图4所示的示例性图形。
前面已经给出了仅出于说明和描述的目的而给出的关于各种实施例的描述。它们并非意指为穷尽性的或者将本发明限制于所公开的形式。因此，许多修改和变化对于本领域技术人员而言将是明显的。另外，以上的公开内容并非旨在限制本发明。

Claims (23)

1.一种太阳能电池，包含：
光伏结构；以及
位于所述光伏结构上方的正面金属格栅，其中所述正面金属格栅包含一个或多个电镀的金属层，其中所述正面金属格栅包含一个或多个指状线，并且其中各个指状线的每个端部经由附加的金属线耦接至相邻指状线的对应端部，从而确保所述各个指状线没有开口端。
2.根据权利要求1所述的太阳能电池，其中所述附加的金属线位于所述太阳能电池的边缘附近，并且其中所述附加的金属线具有比所述各个指状线的宽度大的宽度。
3.根据权利要求1所述的太阳能电池，其中所述附加的金属线与所述各个指状线之间的相交部成圆角或倒角。
4.根据权利要求1所述的太阳能电池，其中所述金属格栅还包含位于所述电镀的金属层与所述光伏结构之间的金属粘附层，其中所述金属粘附层还包含下列项中的一项或多项：Cu、Al、Co、W、Cr、Mo、Ni、Ti、Ta、氮化钛(TiNx)、钛钨(TiWx)、硅化钛(TiSix)、氮化硅钛(TiSiN)、氮化钽(TaNx)、氮化硅钽(TaSiNx)、镍钒(NiV)、氮化钨(WNX)，以及它们的组合。
5.根据权利要求4所述的太阳能电池，其中所述光伏结构包含透明导电氧化物(TCO)层，并且其中所述金属粘附层与所述TCO层直接接触。
6.根据权利要求1所述的太阳能电池，其中所述电镀的金属层包含下列项中的一项或多项：
Cu层；
Ag层；以及
Sn层。
7.根据权利要求1所述的太阳能电池，其中所述金属格栅还包含位于所述电镀的金属层与光伏结构之间的金属籽晶层。
8.根据权利要求7所述的太阳能电池，其中所述金属籽晶层使用包括蒸发沉积和溅射沉积之一的物理气相沉积(PVD)技术来形成。
9.根据权利要求1所述的太阳能电池，其中所述各个指状线的预定边缘部分具有比所述各个指状线的中心部分的宽度大的宽度。
10.根据权利要求1所述的太阳能电池，其中所述光伏结构包含：
包含Si的基体层；以及
位于所述基体层上方的发射极层，其中所述发射极层包含下列项中的至少一项：
位于所述基体层内的以掺杂剂扩散的区域；
位于所述基体层上方的以掺杂剂扩散的多晶硅层；以及
位于所述基体层上方的掺杂的非晶硅(a-Si)层。
11.根据权利要求10所述的太阳能电池，其中所述掺杂剂包括下列项之一：
磷；以及
硼。
12.根据权利要求1所述的太阳能电池，还包含位于所述光伏结构下方的背面金属格栅，其中所述背面金属格栅包含一个或多个电镀的金属层，其中所述背面金属格栅包含一个或多个指状线，并且其中各个指状线的每个端部经由附加的金属线耦接至相邻指状线的对应端部，从而确保所述各个指状线没有开口端。
13.一种用于制造太阳能电池的方法，包括：
在半导体结构的顶部上沉积透明导电氧化物(TCO)层以形成光伏结构；
在所述光伏结构的顶部上形成正面金属格栅，其中所述正面金属格栅包含一个或多个电镀的金属层，其中所述正面金属格栅包含一个或多个指状线，并且其中各个指状线的每个端部经由附加的金属线耦接至相邻指状线的对应端部，从而确保所述各个指状线没有开口端。
14.根据权利要求13所述的方法，其中所述附加的金属线位于所述太阳能电池的边缘附近，并且其中所述附加的金属线具有比所述各个指状线的宽度大的宽度。
15.根据权利要求13所述的方法，其中所述附加的金属线与所述各个指状线之间的相交部成圆角或倒角。
16.根据权利要求13所述的方法，其中形成所述正面金属格栅涉及使用物理气相沉积(PVD)技术在所述TCO层的顶部上沉积金属粘附层，其中所述金属粘附层包含下列项中的一项或多项：Cu、Al、Co、W、Cr、Mo、Ni、Ti、Ta、氮化钛(TiNx)、钛钨(TiWx)、硅化钛(TiSix)、氮化硅钛(TiSiN)、氮化钽(TaNx)、氮化硅钽(TaSiNx)、镍钒(NiV)、氮化钨(WNX)，以及它们的组合。
17.根据权利要求13所述的方法，其中所述电镀的金属层包含下列项中的一项或多项：
Cu层；
Ag层；以及
Sn层。
18.根据权利要求13所述的方法，其中形成所述正面金属格栅涉及在形成所述电镀的金属层之前使用物理气相沉积(PVD)技术来沉积金属籽晶层。
19.根据权利要求18所述的方法，其中形成所述电镀的金属层涉及：
在所述金属籽晶层的顶部上沉积图形化的掩蔽层，其中所述掩蔽层的开口对应于正面电极格栅的位置，并且其中所述掩蔽层是电绝缘的；
通过将所述太阳能电池浸没于电解质溶液中来将一个或多个金属层电镀于所述图形化的掩蔽层的顶部上；
去除所述图形化的掩蔽层；以及
执行蚀刻处理以去除所述金属籽晶层的没有被所述电镀的金属层覆盖的部分。
20.根据权利要求13所述的方法，其中所述各个指状线的预定边缘部分具有比所述各个指状线的中心部分的宽度大的宽度。
21.根据权利要求13所述的方法，其中形成所述光伏结构还包括在轻掺杂的基体层的顶部上形成发射极层，并且其中形成所述发射极层涉及下列项中的至少一项：
将掺杂剂扩散到包含Si的所述轻掺杂的基体层之内；
将掺杂剂扩散到位于所述基体层上方的多晶硅层之内；以及
沉积掺杂的非晶硅层。
22.根据权利要求21所述的方法，其中所述掺杂剂包括下列项之一：
磷；以及
硼。
23.根据权利要求13所述的方法，还包括形成位于所述光伏结构下方的背面金属格栅，其中所述背面金属格栅包含一个或多个电镀的金属层，其中所述背面金属格栅包含一个或多个指状线，并且其中各个指状线的每个端部经由附加的金属线耦接至相邻指状线的对应端部，从而确保所述各个指状线没有开口端。
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US20140096823A1 (en) 2014-04-10
US9461189B2 (en) 2016-10-04
AU2013326971B2 (en) 2016-06-30
MX342532B (es) 2016-09-30
US9343595B2 (en) 2016-05-17
US20160233354A1 (en) 2016-08-11
EP2904643B1 (en) 2018-12-05
MX2015004291A (es) 2015-08-06
US20150311360A1 (en) 2015-10-29
JP6351601B2 (ja) 2018-07-04

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