US5364518A - Magnetron cathode for a rotating target - Google Patents
Magnetron cathode for a rotating target Download PDFInfo
- Publication number
- US5364518A US5364518A US07/976,960 US97696092A US5364518A US 5364518 A US5364518 A US 5364518A US 97696092 A US97696092 A US 97696092A US 5364518 A US5364518 A US 5364518A
- Authority
- US
- United States
- Prior art keywords
- magnet means
- target
- stretches
- end stretches
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004907 flux Effects 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 abstract description 5
- 238000002679 ablation Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Definitions
- the invention relates to a magnetron cathode for a rotating tubular target, wherein the plasma is in the shape of a racetrack with two long straight stretches joined together.
- a target is provided as a coating on the outer cylindrical surface of a copper support tube which is mounted for rotation in a vacuum chamber.
- Inner and outer loops of magnets are arranged inside the support tube to form a closed tunnel of magnetic flux which serves to trap a plasma loop over the target.
- FIGS. 1 and 2 illustrate such apparatus, which is also applicable for the present invention.
- the target 1 is applied to support tube 2 having closed ends which form a drum.
- Axles in the form of tubes 5, 6 are journaled for rotation in walls 3, 4 of the vacuum chamber and serve as conduits for coolant 11 whose flow is indicated by arrows 7 and 8.
- the drum is sealed against leakage by seals 13 and 14.
- a row of magnets 17 on a yoke 19 and holder 21 inside the drum serves to concentrate a plasma 12 outside the target when power is supplied to the cathode.
- the magnets 17 are part of the inner loop and have a single polarity facing radially outward.
- the magnets 18 are part of the outer loop and have the opposite polarity facing radially outward.
- a racetrack shaped yoke 19 on a holder 21 serves to complete the flux path.
- FIG. 2A is a schematic section of another known rotating cathode system having a single central row of magnets 16 and an outer loop 17 on a yoke 20. Once again a racetrack shaped plasma loop is entrapped by the closed loop of magnetic flux 10.
- a magnetron of this type is disclosed in U.S. Pat. No. 5,047,131.
- FIG. 3 illustrates the racetrack shape of the plasma having straight stretches 22, 23 which parallel the axis of rotation, and end stretches or turns 24, 25.
- a point 26 on the rotating target 44 moves in the direction of arrow 27 through the end stretch 25, while a point 28 moves in the parallel direction 29 through the side stretches 22, 23. Since the point 26 is exposed to the active area of the plasma longer than the point 28, the target 44 forms an ablation profile 35 as shown (exaggerated) in FIG. 4. If the ring-like pits 30, 31 eroded in the surface of the target 44 reach the support tube 2 (FIG. 1), the coating of the substrate will be contaminated. If the support tube 45 is eroded through, cooling water can be released into the vacuum chamber and cause major damage.
- the apparatus and methods of the present invention achieve a uniform ablation profile by altering the magnet field affecting the end stretches of the plasma loop. More particularly, the arcuate magnetic flux is widened so that the entrapped plasma is less intense and covers a wider area at the ends of the loop.
- FIG. 5 is a schematic illustration of the plasma loop formed according to the invention. Note that the width 43 of the end stretches 39, 40 is considerably wider than the width of the straight stretches 41, 42. By proper adjustment of the width 43, a uniform ablation profile as illustrated in FIG. 6 may be achieved. Here the ablation profile 36 has steep flanks 37, 38 and is essentially rectangular. The target 44 is therefore consumed efficiently without premature burn-through to the underlying support tube.
- the magnetic field geometry may be affected by changing the distance between magnets forming the flux arcs over the end stretches, by changing the distance between the magnet and the rotating target, or changing the number of magnets.
- the strength of at least one magnet may be varied by the action of an electromagnet.
- Other means affecting the flux geometry, and thus the plasma shape and the erosion profile of the target include arranging a shunt on at least one magnetic pole, and affixing specially shaped pole shoes to the poles.
- FIG. 1 is a diagrammatic cross section of a rotatable tubular cathode
- FIG. 2 is an axial cross section taken along line II--II of FIG. 1,
- FIG. 2A is an axial cross section of an alternative embodiment of magnetron with a rotating tubular target
- FIG. 3 is a diagrammatic plan view of the plasma formed by prior art apparatus
- FIG. 4 is a diagrammatic partial side view of the erosion trench formed in the target with the prior art apparatus
- FIG. 5 is a diagrammatic plan view of the plasma formed by the inventive apparatus
- FIG. 6 is a diagrammatic partial side view of the erosion trench formed on the target with the inventive apparatus
- FIG. 7 is a partial side section showing the pairs of magnets over the end stretches
- FIG. 7A is a schematic of the flux without any fixtures on the magnets
- FIG. 7B is a schematic of the flux with a shunt traversing the yoke and a permanent magnet
- FIG. 7C is a schematic of the flux with special pole shoes fixed to the permanent magnets.
- FIG. 7 shows the magnet pairs 52, 53 and 61, 62 which provide the arcuate flux for the end stretches of the plasma loop.
- the magnets 53, 61 are part of the inner loop, while magnets 52, 62 are part of the outer loop.
- Yoke sections 50, 51 represent part of a single racetrack shaped yoke.
- the magnets 53, 61 may be seen as the end magnets of a single row within the outer loop (see FIG. 2A).
- the field geometry of the flux confining the plasma loop can be altered by varying the distances 54, 60 between magnets in each pair. More particularly, if the distances 54, 60 are greater than the spacing between magnets over the stretches parallel to the axis of rotation, without more, the plasma distribution of FIG. 5, and the erosion profile of FIG. 6, may be achieved. The actual spacing is determined experimentally.
- the shape of the magnetic field may also be controlled by increasing or decreasing the distance 55 between at least one of the magnets and the target 1, or by placing a shunt 59.
- FIG. 7A illustrates the shape of the flux field without any additional fixtures
- FIG. 7B illustrates the shape of the flux field with the shunt 59 in place
- FIG. 7C shows the flux field with pole shoes 70, 71 in place.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/976,960 US5364518A (en) | 1991-05-28 | 1992-11-13 | Magnetron cathode for a rotating target |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4117367 | 1991-05-28 | ||
DE19914117367 DE4117367C2 (en) | 1991-05-28 | 1991-05-28 | Method for generating a homogeneous removal profile on a rotating target of a sputtering device |
US74428091A | 1991-08-13 | 1991-08-13 | |
US07/976,960 US5364518A (en) | 1991-05-28 | 1992-11-13 | Magnetron cathode for a rotating target |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US74428091A Continuation-In-Part | 1991-05-28 | 1991-08-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
US5364518A true US5364518A (en) | 1994-11-15 |
Family
ID=25903987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/976,960 Expired - Lifetime US5364518A (en) | 1991-05-28 | 1992-11-13 | Magnetron cathode for a rotating target |
Country Status (1)
Country | Link |
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US (1) | US5364518A (en) |
Cited By (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996021750A1 (en) * | 1995-01-12 | 1996-07-18 | The Boc Group, Inc. | Rotatable magnetron with curved or segmented end magnets |
WO1998035070A1 (en) * | 1997-02-07 | 1998-08-13 | Coatinvest C.V.A. | Apparatus and method for sputtering a magnetron target |
US5812405A (en) * | 1995-05-23 | 1998-09-22 | Viratec Thin Films, Inc. | Three variable optimization system for thin film coating design |
US5997705A (en) * | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
US6350356B1 (en) | 1997-11-26 | 2002-02-26 | Vapor Technologies, Inc. | Linear magnetron arc evaporation or sputtering source |
US6416639B1 (en) | 1999-06-21 | 2002-07-09 | Sinvaco N.V. | Erosion compensated magnetron with moving magnet assembly |
US6445503B1 (en) | 2000-07-10 | 2002-09-03 | Guardian Industries Corp. | High durable, low-E, heat treatable layer coating system |
US6576349B2 (en) | 2000-07-10 | 2003-06-10 | Guardian Industries Corp. | Heat treatable low-E coated articles and methods of making same |
US20030230482A1 (en) * | 2002-06-18 | 2003-12-18 | Hannstar Display Corp. | Magnetic control oscillating-scanning sputter |
US6736948B2 (en) | 2002-01-18 | 2004-05-18 | Von Ardenne Anlagentechnik Gmbh | Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation |
US20040121163A1 (en) * | 2002-12-20 | 2004-06-24 | Laird Ronald E. | Heat treatable coated article with reduced color shift at high viewing angles |
US20040129561A1 (en) * | 2003-01-07 | 2004-07-08 | Von Ardenne Anlagentechnik Gmbh | Cylindrical magnetron magnetic array mid span support |
US20050051422A1 (en) * | 2003-02-21 | 2005-03-10 | Rietzel James G. | Cylindrical magnetron with self cleaning target |
US20060000705A1 (en) * | 2004-07-01 | 2006-01-05 | Klaus Hartig | Cylindrical target with oscillating magnet for magnetron sputtering |
US7014741B2 (en) | 2003-02-21 | 2006-03-21 | Von Ardenne Anlagentechnik Gmbh | Cylindrical magnetron with self cleaning target |
US20060065524A1 (en) * | 2004-09-30 | 2006-03-30 | Richard Newcomb | Non-bonded rotatable targets for sputtering |
US20060096855A1 (en) * | 2004-11-05 | 2006-05-11 | Richard Newcomb | Cathode arrangement for atomizing a rotatable target pipe |
US20060278521A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for controlling ion density and energy using modulated power signals |
US20060278519A1 (en) * | 2005-06-10 | 2006-12-14 | Leszek Malaszewski | Adaptable fixation for cylindrical magnetrons |
US20060278524A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
US20060289304A1 (en) * | 2005-06-22 | 2006-12-28 | Guardian Industries Corp. | Sputtering target with slow-sputter layer under target material |
CN1296513C (en) * | 1999-11-05 | 2007-01-24 | W.C.贺利氏股份有限及两合公司 | Tube target |
US20070080056A1 (en) * | 2005-10-07 | 2007-04-12 | German John R | Method and apparatus for cylindrical magnetron sputtering using multiple electron drift paths |
US20070089982A1 (en) * | 2005-10-24 | 2007-04-26 | Hendryk Richert | Sputtering target and method/apparatus for cooling the target |
US20070095281A1 (en) * | 2005-11-01 | 2007-05-03 | Stowell Michael W | System and method for power function ramping of microwave liner discharge sources |
US20070098916A1 (en) * | 2005-11-01 | 2007-05-03 | Stowell Michael W | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
US20070251816A1 (en) * | 2006-05-01 | 2007-11-01 | Vapor Technologies, Inc. | Bi-directional filtered arc plasma source |
US20080121515A1 (en) * | 2006-11-27 | 2008-05-29 | Seagate Technology Llc | Magnetron sputtering utilizing halbach magnet arrays |
US20110127157A1 (en) * | 2007-08-15 | 2011-06-02 | Gencoa Ltd. | Low impedance plasma |
US20110186427A1 (en) * | 2010-01-29 | 2011-08-04 | Angstrom Sciences, Inc. | Cylindrical Magnetron Having a Shunt |
WO2011056581A3 (en) * | 2009-10-26 | 2011-09-09 | General Plasma, Inc. | Rotary magnetron magnet bar and apparatus containing the same for high target utilization |
CN101877300B (en) * | 2009-04-30 | 2012-01-04 | 深圳市豪威薄膜技术有限公司 | Sputter magnetron device |
WO2011123688A3 (en) * | 2010-04-02 | 2012-03-08 | NuvoSun, Inc. | Target utilization improvement for rotatable magnetrons |
WO2012094566A2 (en) | 2011-01-06 | 2012-07-12 | Sputtering Components, Inc. | Sputtering apparatus |
US20120174864A1 (en) * | 2009-10-05 | 2012-07-12 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Plasma cvd apparatus |
WO2014039426A1 (en) | 2012-09-04 | 2014-03-13 | Sputtering Components, Inc. | Sputtering apparatus |
US20140183037A1 (en) * | 2012-12-28 | 2014-07-03 | Silevo, Inc. | Radio-frequency sputtering system with rotary target for fabricating solar cells |
GB2510389A (en) * | 2013-02-01 | 2014-08-06 | Camvac Ltd | Apparatus and methods for defining a plasma |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9343595B2 (en) | 2012-10-04 | 2016-05-17 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US9887306B2 (en) | 2011-06-02 | 2018-02-06 | Tesla, Inc. | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
WO2018068833A1 (en) * | 2016-10-11 | 2018-04-19 | Applied Materials, Inc. | Magnet arrangement for a sputter deposition source and magnetron sputter deposition source |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US10084099B2 (en) | 2009-11-12 | 2018-09-25 | Tesla, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US10115839B2 (en) | 2013-01-11 | 2018-10-30 | Tesla, Inc. | Module fabrication of solar cells with low resistivity electrodes |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
KR20190097699A (en) * | 2018-02-13 | 2019-08-21 | 한국알박(주) | Magnet aggregate of magnetron sputtering apparatus |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
US11501959B2 (en) | 2015-02-03 | 2022-11-15 | Cardinal Cg Company | Sputtering apparatus including gas distribution system |
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-
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Cited By (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996021750A1 (en) * | 1995-01-12 | 1996-07-18 | The Boc Group, Inc. | Rotatable magnetron with curved or segmented end magnets |
US5812405A (en) * | 1995-05-23 | 1998-09-22 | Viratec Thin Films, Inc. | Three variable optimization system for thin film coating design |
WO1998035070A1 (en) * | 1997-02-07 | 1998-08-13 | Coatinvest C.V.A. | Apparatus and method for sputtering a magnetron target |
US6264803B1 (en) * | 1997-02-07 | 2001-07-24 | Steven V. Morgan | Apparatus and method for sputtering |
US6350356B1 (en) | 1997-11-26 | 2002-02-26 | Vapor Technologies, Inc. | Linear magnetron arc evaporation or sputtering source |
DE19853943B4 (en) * | 1997-11-26 | 2006-04-20 | Vapor Technologies, Inc. (Delaware Corporation), Longmont | Cathode for sputtering or arc vapor deposition as well as apparatus for coating or ion implantation with such a cathode |
US5997705A (en) * | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
US6416639B1 (en) | 1999-06-21 | 2002-07-09 | Sinvaco N.V. | Erosion compensated magnetron with moving magnet assembly |
CN1296513C (en) * | 1999-11-05 | 2007-01-24 | W.C.贺利氏股份有限及两合公司 | Tube target |
US6686050B2 (en) | 2000-07-10 | 2004-02-03 | Guardian Industries Corp. | Heat treatable low-E coated articles and methods of making same |
US20030194567A1 (en) * | 2000-07-10 | 2003-10-16 | Guardian Industries Corp | Heat treatable low-E coated articles and methods of making same |
US20060029816A1 (en) * | 2000-07-10 | 2006-02-09 | Guardian Industries Corp. | Low-E coated articles having zirconium inclusive dielectric layer |
US7300701B2 (en) | 2000-07-10 | 2007-11-27 | Guardian Industries Corp. | High durable, low-e, heat treatable layer coating system |
US6723211B2 (en) | 2000-07-10 | 2004-04-20 | Guardian Industries Corp | Method of making coated articles with contact layer that is more oxidized further from IR reflecting layer |
US6445503B1 (en) | 2000-07-10 | 2002-09-03 | Guardian Industries Corp. | High durable, low-E, heat treatable layer coating system |
US7314668B2 (en) | 2000-07-10 | 2008-01-01 | Guardian Industries Corp. | Low-E coated articles having zirconium inclusive dielectric layer |
US6576349B2 (en) | 2000-07-10 | 2003-06-10 | Guardian Industries Corp. | Heat treatable low-E coated articles and methods of making same |
US8173263B2 (en) | 2000-07-10 | 2012-05-08 | Guardian Industries Corp. | Heat treatable low-E coated articles and methods of making same |
US20050006233A1 (en) * | 2002-01-18 | 2005-01-13 | Barrett Richard L. | Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation |
US6736948B2 (en) | 2002-01-18 | 2004-05-18 | Von Ardenne Anlagentechnik Gmbh | Cylindrical AC/DC magnetron with compliant drive system and improved electrical and thermal isolation |
US6793785B2 (en) * | 2002-06-18 | 2004-09-21 | Hannstar Display Corp. | Magnetic control oscillating-scanning sputter |
US20050011758A1 (en) * | 2002-06-18 | 2005-01-20 | Hannstar Display Corp. | Magnetic control oscillation-scanning sputter |
US20030230482A1 (en) * | 2002-06-18 | 2003-12-18 | Hannstar Display Corp. | Magnetic control oscillating-scanning sputter |
JP2004019006A (en) * | 2002-06-18 | 2004-01-22 | Hannstar Display Corp | Magnetron sputtering system |
US7005190B2 (en) | 2002-12-20 | 2006-02-28 | Guardian Industries Corp. | Heat treatable coated article with reduced color shift at high viewing angles |
US20040121163A1 (en) * | 2002-12-20 | 2004-06-24 | Laird Ronald E. | Heat treatable coated article with reduced color shift at high viewing angles |
WO2004061894A1 (en) * | 2003-01-07 | 2004-07-22 | Von Ardenne Anlagentechnik Gmbh | Mid span support for a magnetic array of a cylindrical magnetron sputter device |
US20040129561A1 (en) * | 2003-01-07 | 2004-07-08 | Von Ardenne Anlagentechnik Gmbh | Cylindrical magnetron magnetic array mid span support |
US7014741B2 (en) | 2003-02-21 | 2006-03-21 | Von Ardenne Anlagentechnik Gmbh | Cylindrical magnetron with self cleaning target |
US20050051422A1 (en) * | 2003-02-21 | 2005-03-10 | Rietzel James G. | Cylindrical magnetron with self cleaning target |
US20060000705A1 (en) * | 2004-07-01 | 2006-01-05 | Klaus Hartig | Cylindrical target with oscillating magnet for magnetron sputtering |
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