CN107093649A - 一种hjt光伏电池的制备方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- 238000007650 screen-printing Methods 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- 238000013007 heat curing Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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Abstract
本发明公开了一种HJT光伏电池的制备方法，所述制备方法包括如下步骤：提供N型硅片，并对所述硅片进行制绒操作；在所述硅片的上表面依次沉积第一本征非晶硅层、N型非晶硅层以及氮化硅层；在所述硅片的下表面依次沉积第二本征非晶硅层和P型非晶硅层；在所述P型非晶硅层上形成背面减反层；形成正面接触金属电极；在所述背面减反层上进行丝网印刷。采用本发明提供的制备方法制备HJT光伏电池成本低、易操作，制备的电池转换效率高。
Description
技术领域
本发明属于太阳能电池技术领域，具体地说，涉及一种HJT光伏电池的制备方法。
背景技术
全世界十亿以上的人住在无电或缺电地区，人们的电量需求日益迫切。而随着全世界环境保护意识的高涨，以及地球升温所造成的自然灾害日益严重，人们对传统能源的关注点逐渐下降，转而对无污染、可再生的太阳能、风能等能源进行研究使用。太阳能电池市场将会正在持续快速发展。
异质结是指两种不同的半导体相接触所形成的界面区域。异质结通常具有两种半导体各自的PN结都不能达到的优良的光电特性，使它适宜于制作超高速开关器件、太阳能电池以及半导体激光器等。由于其具有不可替代的优势，目前对异质结太阳能电池(HJT光伏电池)的研究开展地如火如荼。
传统的HJT光伏电池的制备，生产成本较高，银浆、各种靶材以及光刻胶的消耗量较大，不适用于大面积推广使用。此外，由于在电池正面采用TCO材料，会因为TCO的吸光特性而造成大量的功率损失，电池效率不高。
因此，目前需要一种能够降低生产成本、提高光电转换效率的HTJ光伏电池的制备方法。
发明内容
为了克服现有技术中存在的缺陷，降低各种昂贵原材料的使用量、提高HJT光伏电池的电性能，本发明提供了一种HJT光伏电池的制备方法。
根据本发明的一个方面，提供一种HJT光伏电池的制备方法，所述制备方法包括如下步骤：
a)提供N型硅片，并对所述硅片进行制绒操作；
b)在所述硅片的上表面依次沉积第一本征非晶硅层、N型非晶硅层以及氮化硅层；
在所述硅片的下表面依次沉积第二本征非晶硅层和P型非晶硅层；
c)在所述P型非晶硅层上形成背面减反层；
d)形成正面接触金属电极；
e)在所述背面减反层上进行丝网印刷。
根据本发明的一个具体实施方式，所述步骤d)进一步为：
d1)利用皮秒激光对第一本征非晶硅层、N型非晶硅层以及氮化硅层进行开槽；
d2)在开槽同时进行激光掺杂；
d3)采用光诱导镀的方式形成金属电极。
根据本发明的另一个具体实施方式，在所述步骤e)之后还包括步骤：
f)将所述硅片置于保护气氛环境下进行热固化，所述热固化操作在200℃以下进行。
根据本发明的又一个具体实施方式，所述制绒操作为利用具有强氧化性物质对所述硅片表面进行化学处理。
在本发明提供个制备方法中，采用氮化硅薄膜取代传统HJT电池的透明导电层(TCO)作为电池的正面减反膜。同时，利用激光局部掺杂以及光诱导电镀(Light InducedPlating，LID)工艺形成埋栅效果。电池片栅线直接接触N型硅片基体，利用晶硅基体的相对优越导电性对光生电子进行收集，以弥补氮化硅薄膜本身高绝缘性的缺陷。在光伏电池的背面，在n-C-Si/i-a-Si/p-a-Si的异质结外层形成TCO背面减反膜，然后在TCO膜上形成金属网栅结构，高效收集电流，整个电池因此实现双面发电的效果。
采用本发明提供的制备方法，能够有效降低HJT光伏电池的生产成本，低温银浆消耗量能够降低一半，昂贵的含铟靶材(ITO，IWO，ITIO等)的消耗量也能降低一半。与传统的电镀HJT光伏电池工艺不同，无需使用昂贵的光刻胶。电池正面采用激光埋栅选择性发射极技术，降低了接触电阻；由于埋栅结构的特点，电极栅线对电子形成了三维立体吸收，而通过激光槽形成的优异高宽比形貌，使得栅线具备更好的电性能。正面电镀栅线相对于传统丝网印刷而言，得到的栅线更细、更密，能够更好地吸收电子。此外，HJT光伏电池正面采用氮化硅薄膜而非TCO薄膜，可以有效解决传统HJT光伏电池TCO吸光造成效率损失的问题。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：
图1所示为根据本发明提供的一种HJT光伏电池的制备方法的一个具体实施方式的流程示意图；
图2～图6所示为根据本发明提供的一种HJT光伏电池的制备方法中该HJT光伏电池的结构变化示意图。
附图中相同或相似的附图标记代表相同或相似的部件。
具体实施方式
下文的公开提供了许多不同的实施例或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。此外，本发明可以在不同例子中重复参考数字和/或字母。这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施例和/或设置之间的关系。应当注意，在附图中所图示的部件不一定按比例绘制。本发明省略了对公知组件和处理技术及工艺的描述以避免不必要地限制本发明。
参考图1，本发明提供的HJT光伏电池的制备方法包括：
步骤S101，提供N型硅片100，并对所述硅片100进行制绒操作。参考图2，在硅片100的表面形成绒面，可以有效提高硅片100的陷光作用。优选的，所述制绒操作为利用具有强氧化性物质对所述硅片表面进行化学处理，强氧化物质例如酸性溶液或者碱性溶液。更为具体的，如采用酸性溶液进行制绒，则处理温度为4℃～15℃，腐蚀时间为2min～5min；如采用碱性溶液进行制绒，则碱处理温度60℃～80℃，腐蚀时间为10min～20min。一般情况下，用碱性溶液处理后，可在硅片100的表面得到金字塔状绒面；用酸性溶液处理后，可在硅片100的表面得到虫孔状绒面。绒面大小为微米级尺寸。
参考图3，继续执行步骤S102，在所述硅片100的上表面依次沉积第一本征非晶硅层210、N型非晶硅层220以及氮化硅层400。
在所述硅片100的下表面依次沉积第二本征非晶硅层310和P型非晶硅层330，以形成背面异质PN结。
优选的，上述各层均采用PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积)的方式进行沉积。为了达到更好的沉积效果，优选的，PECVD的具体工艺参数范围如下：硅烷流量：100～500sccm、硼烷流量：100～1000sccm、氢气流量：500～1500sccm、功率密度:200～1000W/m2、温度：100～250摄氏度、压力：0.5～3mbar。
步骤S103，在所述P型非晶硅层上形成背面减反层500，如图4所示。优选的，采用物理气相沉积(Physical Vapor Deposition，PVD)的方式进行沉积。优选的，所述背面减反层500为透明导电氧化物薄膜(TCO)。该背面减反层500可以采用氧化锌、掺硼氧化锌等材料制备。
继续执行步骤S104，参见图5，形成正面接触金属电极600。
首先，利用皮秒激光，对第一本征非晶硅层210、N型非晶硅层220以及氮化硅层400进行开槽。其中，单片硅片的刻线时间为2～3秒，激光功率优选为1～5W；其次，在开槽的同时进行激光掺杂；最后，采用光诱导镀(Light Induced Plating)的方式形成金属电极600。
形成金属电极600之后，继续执行步骤S105，在所述背面减反层500上进行丝网印刷，即利用丝网印刷将低温银浆料印刷于光伏电池的背面减反层500上。
在所述步骤S105之后还需要进行固化，即将所述硅片置于保护气氛环境下进行热固化，固化后即可在硅片的背面形成接触金属电极700。优选的，所述热固化操作在200℃以下进行。优选的，所述保护气氛环境是指在氮气气氛下。该保护气氛环境中的气体成分的质量百分比稳定保持在：氮气：96％，氢气：4％。
采用本发明提供的制备方法制备HJT光伏电池成本低、易操作，制备的电池转换效率高。
虽然关于示例实施例及其优点已经详细说明，应当理解在不脱离本发明的精神和所附权利要求限定的保护范围的情况下，可以对这些实施例进行各种变化、替换和修改。对于其他例子，本领域的普通技术人员应当容易理解在保持本发明保护范围内的同时，工艺步骤的次序可以变化。
此外，本发明的应用范围不局限于说明书中描述的特定实施例的工艺、机构、制造、物质组成、手段、方法及步骤。从本发明的公开内容，作为本领域的普通技术人员将容易地理解，对于目前已存在或者以后即将开发出的工艺、机构、制造、物质组成、手段、方法或步骤，其中它们执行与本发明描述的对应实施例大体相同的功能或者获得大体相同的结果，依照本发明可以对它们进行应用。因此，本发明所附权利要求旨在将这些工艺、机构、制造、物质组成、手段、方法或步骤包含在其保护范围内。
Claims (4)
1.一种HJT光伏电池的制备方法，其特征在于，所述制备方法包括如下步骤：
a)提供N型硅片，并对所述硅片进行制绒操作；
b)在所述硅片的上表面依次沉积第一本征非晶硅层、N型非晶硅层以及氮化硅层；
在所述硅片的下表面依次沉积第二本征非晶硅层和P型非晶硅层；
c)在所述P型非晶硅层上形成背面减反层；
d)形成正面接触金属电极；
e)在所述背面减反层上进行丝网印刷。
2.根据权利要求1所述的制备方法，其特征在于，所述步骤d)进一步为：
d1)利用皮秒激光对第一本征非晶硅层、N型非晶硅层以及氮化硅层进行开槽；
d2)在开槽同时进行激光掺杂；
d3)采用光诱导镀的方式形成金属电极。
3.根据权利要求1所述的制备方法，其特征在于，在所述步骤e)之后还包括步骤：
f)将所述硅片置于保护气氛环境下进行热固化，所述热固化操作在200℃以下进行。
4.根据权利要求1所述的制备方法，其特征在于，所述制绒操作为利用具有强氧化性物质对所述硅片表面进行化学处理。
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