CN105810771A - 一种背结晶硅异质结双面太阳电池及制备方法 - Google Patents
一种背结晶硅异质结双面太阳电池及制备方法 Download PDFInfo
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Abstract
一种背结晶硅异质结双面太阳电池及制备方法,其结构从迎光面开始依次为:迎光面栅线状电极、高透过率减反射薄膜、重掺杂晶体硅背场层、硅片、本征非晶硅基薄膜钝化层、重掺杂非晶硅薄膜发射极、透明导电薄膜层,背光面栅线状电极。先进行硅片的制绒清洗,然后依次制备重掺杂晶体硅背场层、高透过率减反射薄膜、迎光面栅线状电极;硅片的背光面再次清洗,再制备本征非晶硅基薄膜钝化层、重掺杂非晶硅薄膜发射极、透明导电薄膜层、背光面栅线状电极制备。相对于双面异质结HIT结构,本发明可增大太阳电池的短路电流,获得更高转换效率,减少了至少一半甚至全部ITO用量,减少了部分银用量,与现行晶体硅太阳电池产线技术兼容,减少了设备成本。
Description
技术领域
本发明属于太阳电池和半导体器件技术领域。涉及太阳电池的结构设计和制造技术。
背景技术
晶硅异质结太阳电池的典型代表为日本松下公司的基于n型硅片的双面异质结HIT结构和将pn结均移至背面的HBC结构,其中前者可作为双面进光太阳电池,后者只可单面进光。双面进光太阳电池制造制作成双面进光组件相比于同等条件下的单面进光太阳电池组件可提高5~30%(不同使用环境,草地较少,雪地最多)的发电量收益,双面进光是太阳电池未来的应用趋势。HIT结构的高转换效率得益于非晶硅/晶体硅的异质结结构所带来的高内建电势,但其表面的透明导电ITO层、重掺杂及本征a-Si:H层会造成较多的光吸收损耗,所以其短路电流较小。另外,从资源消耗及成本方面考虑,该结构双面均需要地球上稀有原材料ITO和Ag,且因其只能采用低温烘干工艺制作银栅线,栅线电阻率远高于纯银,导致需要消耗更多的银以保证器件较小的串联电阻,并造成更多的光遮挡面积和光生电流损失。目前,如何进一步减少异质结太阳电池的遮光损失是该类太阳电池性能提升的关键;同时,减少贵重原材料消耗,降低生产成本也是加速该类太阳电池推广普及的重要方面。
发明内容
本发明的目的是提出一种背结晶体硅异质结双面太阳电池及制备方法,涉及太阳能结构以及配套的生产技术。具有双面进光、高短路电流、高效率、低成本的特点。
本发明所述的一种背结晶硅异质结双面太阳电池,其结构为背结结构,其结构从迎光面开始依次为:迎光面栅线状电极、高透过率减反射薄膜、重掺杂晶体硅背场层、硅片、本征非晶硅基薄膜钝化层、重掺杂非晶硅薄膜发射极、透明导电薄膜层,背光面栅线状电极。
进一步,本结构在采用薄硅片的情况下优势更加明显。
本发明所述的一种背结晶硅异质结双面太阳电池,其制备方法为:硅片的制绒清洗,重掺杂晶体硅背场层的制备,高透过率减反射薄膜的制备,迎光面栅线状电极制备;硅片的背光面再次清洗,本征非晶硅基薄膜钝化层的制备,重掺杂非晶硅薄膜发射极的制备,透明导电薄膜层制备,背光面栅线状电极制备。
进一步,为提高硅片的背光面再次清洗的效果,优选在硅片的制绒清洗后在硅片的背光面预先沉积一层氧化硅保护膜,所述氧化硅保护膜在硅片的背光面再次清洗步骤中予以去除。
本发明所述一种背结晶硅异质结双面太阳电池,其结构的各部分的优选材料构成从迎光面依次为:栅线状银电极,氮化硅薄膜钝化减反射层,重掺杂n型晶体硅背场层,n型晶体硅片,本征非晶硅或非晶亚氧化硅薄膜,重掺杂非晶硅或非晶亚氧化硅薄膜发射极,ITO或AZO透明导电氧化物薄膜(优选AZO),栅线状银或铜电极。
本发明上述优选材料构成的一种背结晶硅异质结双面太阳电池的制备方法为:n型硅片的制绒清洗,采用CVD或PVD法在硅片的迎光面上沉积含磷氧化硅薄膜作为扩散源进行高温扩散制造重掺杂n型晶体硅背场层,去除扩散源层并进行硅片清洗,PECVD法制造氮化硅薄膜钝化减反射层,丝网印刷高温银浆并烘干烧结得到迎光面栅线状银电极,硅片背光面的再次清洗,采用PECVD或热丝CVD法依次沉积本征非晶硅或非晶亚氧化硅薄膜、重掺杂非晶硅或非晶亚氧化硅薄膜发射极,采用PVD法沉积ITO或AZO,丝网印刷低温银浆或者铜浆并烘干得到背光面栅线状电极,对硅片边缘进行防漏电处理。
所述的制备方法,优选在硅片的制绒清洗后,在硅片的背光面上沉积一层氧化硅薄膜,该层薄膜将在硅片的背光面再次清洗技术步骤中予以去除。进一步,对于透明导电氧化物材料,优选AZO材料,可完全避免贵重原材料ITO的用量。
本发明所述的一种背结晶硅异质结双面太阳电池所用硅片适用于厚度≤200微米的硅片,且优选80-180微米。
本发明采用重掺杂晶体硅层作为非晶硅/晶体硅异质结太阳电池的背场,并对其采用氮化硅作为该面的钝化减反射层,配以高温烧结的银栅线作为电极,将该新型结构用作太阳电池的迎光面,以减少非晶硅/晶体硅太阳电池的光吸收损耗和背场面的串联电阻,减少该类太阳电池贵重原材料ITO的消耗。将非晶硅/晶体硅异质结的重掺杂发射极部分放置于太阳电池的背面,以保留其高内建电势的优点;并且背面采用栅线结构电极,保留了大部分面积可进光,进一步增加太阳电池的转换效率。在此基础上可进一步减少电池背光面电极银材料的用量。设计新型太阳电池结构的整套制造技术路线以保证其大规模产业化生产的可行性、与现有晶硅太阳电池产线的兼容和低制造成本。
本发明效果:相对于双面异质结HIT结构,本发明结构可增大太阳电池的短路电流,获得更高转换效率,减少了至少一半甚至全部ITO用量,减少了部分银用量,与现行晶体硅太阳电池产线技术兼容,减少了设备成本。
附图说明
附图1为本发明结构的太阳能电池与双面异质结HIT结构太阳能电池在不同硅片厚度情况下转换效率对比曲线图。其中1为本发明结构太阳电池不同硅片厚度情况下的转换效率,2为双面异质结HIT结构发射极面进光情况下不同硅片厚度情况下的转换效率,3为双面异质结HIT结构背场面进光情况下不同硅片厚度情况下的转换效率。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
一种背结晶硅异质结双面太阳电池,各部分的材料构成从迎光面依次为:栅线状银电极,氮化硅薄膜钝化减反射层,重掺杂n型晶体硅背场层,n型晶体硅片,本征非晶硅薄膜,p型重掺杂非晶硅薄膜发射极,ITO薄膜,栅线状银电极。上述构成的太阳电池结构的制造技术方案为:n型硅片的制绒清洗;采用PECVD在硅片的迎光面上沉积含磷氧化硅薄膜作为扩散源进行840℃高温扩散制造重掺杂n型晶体硅背场层;HF去除扩散源层并对硅片进行清洗,PECVD法制造氮化硅薄膜钝化减反射层,丝网印刷高温银浆并烘干烧结得到迎光面栅线状银电极,硅片背光面的再次清洗,采用PECVD依次沉积本征非晶硅薄膜、重掺杂非晶硅薄膜发射极,采用PVD法沉积ITO,丝网印刷低温银浆并烘干得到背光面栅线状电极,采用等离子体刻蚀法对硅片边缘进行防漏电处理。
采用该结构的太阳电池采用AMPS软件进行模拟分析,与同等可比膜层结构的双面异质结HIT电池的发射极面进光和背场面见光的转换效率的对比如图1所示,可见本发明结构具有明显的优势。另外,本结构相比于双面异质结HIT结构节省了一半ITO的用量,约半数产线设备采用现有晶硅电池产线所采用的设备,价格便宜,技术兼容性好,大大降低了设备的成本投入。
实施例2。
一种背结晶硅异质结双面太阳电池的结构,各部分的材料构成从迎光面依次为:栅线状银电极,氮化硅薄膜钝化减反射层,重掺杂n型晶体硅背场层,n型晶体硅片,本征非晶亚氧化硅薄膜,重掺杂非晶硅薄膜发射极,AZO透明导电氧化物薄膜,栅线状铜电极。上述材料构成的太阳电池结构的制造技术方案为:n型硅片的制绒清洗,在硅片的背光面上湿氧氧化法得到一层氧化硅薄膜,采用PVD法在硅片的迎光面上沉积含磷氧化硅薄膜作为扩散源进行900℃高温扩散制造重掺杂n型晶体硅背场层,HF去除扩散源层并进行硅片清洗,PECVD法制造氮化硅薄膜钝化减反射层,丝网印刷高温银浆并烘干烧结得到迎光面栅线状银电极,硅片背光面去除氧化硅薄膜并再次清洗,采用热丝CVD法依次银沉积本征非晶亚氧化硅薄膜、重掺杂非晶硅薄膜发射极,采用PVD法沉积AZO,丝网印刷低温铜浆并烘干得到背光面栅线状电极,对硅片边缘进行防漏电处理。
处理转换效率的优势外,本结构相比于双面异质结HIT结构节省了全部ITO的用量,采用廉价的AZO材料取代;节省了发射极面的银用量,采用廉价的铜进行取代;约半数产线设备采用现有晶硅电池产线所采用的设备,价格便宜,技术兼容性好,大大降低了设备的成本投入。
Claims (8)
1.一种背结晶硅异质结双面太阳电池,其特征是其结构从迎光面开始依次为:迎光面栅线状电极、高透过率减反射薄膜、重掺杂晶体硅背场层、硅片、本征非晶硅基薄膜钝化层、重掺杂非晶硅薄膜发射极、透明导电薄膜层,背光面栅线状电极。
2.根据权利要求1所述背结晶硅异质结双面太阳电池,其特征是其结构的各部分的材料构成从迎光面依次为:栅线状银电极、氮化硅薄膜钝化减反射层、重掺杂n型晶体硅背场层、n型晶体硅片、本征非晶硅或非晶亚氧化硅薄膜、重掺杂非晶硅或非晶亚氧化硅薄膜发射极、ITO或AZO透明导电氧化物薄膜、栅线状银或铜电极。
3.根据权利要求1或2所述的背结晶硅异质结双面太阳电池,其特征是所用硅片的厚度≤200微米。
4.根据权利要求1或2所述的背结晶硅异质结双面太阳电池,其特征是所用硅片的厚度为80-180微米。
5.权利要求1所述的背结晶硅异质结双面太阳电池的制备方法,其特征是按以下步骤:硅片的制绒清洗,重掺杂晶体硅背场层的制备,高透过率减反射薄膜的制备,迎光面栅线状电极制备;硅片的背光面再次清洗,本征非晶硅基薄膜钝化层的制备,重掺杂非晶硅薄膜发射极的制备,透明导电薄膜层制备,背光面栅线状电极制备。
6.根据权利要求5所述的背结晶硅异质结双面太阳电池制备方法,其特征是在硅片的制绒清洗后,在硅片的背光面预先沉积一层氧化硅保护膜,而后在硅片的背光面再次清洗步骤中去除。
7.根据权利要求5所述的背结晶硅异质结双面太阳电池制备方法,其特征是按权利要求2所述材料,按如下步骤:n型硅片的制绒清洗,采用CVD或PVD法在硅片的迎光面上沉积含磷氧化硅薄膜作为扩散源进行高温扩散制造重掺杂n型晶体硅背场层,去除扩散源层并进行硅片清洗,PECVD法制造氮化硅薄膜钝化减反射层,丝网印刷高温银浆并烘干烧结得到迎光面栅线状银电极,硅片背光面的再次清洗,采用PECVD或热丝CVD法依次沉积本征非晶硅或非晶亚氧化硅薄膜、重掺杂非晶硅或非晶亚氧化硅薄膜发射极,采用PVD法沉积ITO或AZO,丝网印刷低温银浆或者铜浆并烘干得到背光面栅线状电极,对硅片边缘进行防漏电处理。
8.根据权利要求7所述的背结晶硅异质结双面太阳电池制备方法,其特征是在磷扩散前,在硅片的背光面上沉积一层氧化硅薄膜,该层薄膜将在硅片的背光面再次清洗技术步骤中予以去除。
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