CN104134706B - 一种石墨烯硅太阳电池及其制作方法 - Google Patents
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Abstract
本发明提供一种石墨烯硅太阳电池及其制作方法。该石墨烯硅太阳电池，由上而下依次包括以下结构：正面金属电极、氮化硅薄膜、石墨烯薄膜、N型硅薄层、P型硅基体和背面金属电极构成。该太阳电池可以大幅降低太阳电池的串联电阻，提高电池收集电流的能力，从而提高电池的转换效率。另外，因为石墨烯的导电能力很强，可以降低银浆的使用量，达到降低成本的作用。
Description
技术领域
本发明属于硅太阳电池技术领域，具体为一种石墨烯硅太阳电池及其制作方法。
背景技术
随着传统燃煤发电对环境的污染，以及核电的安全问题等原因，近年来太阳能光伏行业作为一种新型绿色能源越来越受到人们的重视，尤其是晶体硅电池，因为其较高的光电转换效率以及稳定的性能，其市场份额占到90%左右。然而与常规发电相比，太阳能电池成本比较高，导致其不能大规模应用。影响太阳能发电的因素一个是制作成本高，另一个因素是转换效率较低。
石墨烯的问世受到越来越多的关注，很多独特的性能正在被逐步发现并应用到很多领域。其高透光性和优异的导电性能，使石墨烯成为太阳能电池的材料提供了很好的基础。
当前常规晶硅太阳能电池片的制造工艺一般有如下几个步骤：化学清洗及表面织构化处理、扩散制结、边缘刻蚀和去磷硅玻璃、沉积减反射膜、印刷电极、烧结。太阳能电池片在将光能转换成电能的过程中，其内部产生的光生载流子需要通过外部印刷的电极收集并引出，然后与外部电路连接，从而将电流输送出来。
由于目前为了降低串联电阻，提高电流收集能力，因此现有技术的栅线遮光率达到了６％以上，降低了太阳能电池片的利用效率。除此之外，印刷电极时需要贵重金属作为导电浆料，主栅线和副栅线覆盖在硅片上的面积较大也必然使得导电浆料的使用增加。
发明内容
本发明的目的就是针对上述存在的缺陷而提供一种石墨烯硅太阳电池及其制作方法。该太阳电池可以大幅降低太阳电池的串联电阻，提高电池收集电流的能力，从而提高电池的转换效率。另外，因为石墨烯的导电能力很强，可以降低银浆的使用量，达到降低成本的作用。
本发明的一种石墨烯硅太阳电池及其制作方法技术方案为，一种石墨烯硅太阳电池，由上而下依次包括以下结构：正面金属电极、氮化硅薄膜、石墨烯薄膜、N型硅薄层、P型硅基体和背面金属电极构成。
正面金属电极穿透氮化硅薄膜和石墨烯薄膜与N型硅薄层接触。
正面金属电极为Ag电极。
氮化硅薄膜厚度为80-90nm。
石墨烯薄膜厚度为1-10nm。
N型硅薄层扩散方阻为80-90欧姆，结深0.2-0.5μm。
一种石墨烯硅太阳电池的制作方法，包括以下步骤：
（1）将P型基体单晶或多晶硅片放在化学溶液中将表面腐蚀成绒面结构；
（2）通过将磷原子高温扩散或者磷离子注入法完成正面磷掺杂，形成N型硅薄层；
（3）通过化学溶液或等离子法对硅片进行刻蚀去边并清洗；
（4）在N型硅薄层上制备生成石墨烯薄层；
（5）通过PECVD法镀上氮化硅薄层；
（6）印刷正面与背面电极。
步骤（4）所述的石墨烯薄层通过化学气相沉积法、碳化硅表面外延法、氧化减薄法、粘胶带法或硅表面生长法来实现。
步骤（4）所述的石墨烯薄层为一层以上石墨烯。
本发明的有益效果为：
1. 石墨烯层上覆盖氮化硅薄膜层可以实现减反射和钝化效果，并保护石墨烯层不受污染与物理破坏；
2. 石墨烯可以作为导电材料提高电池电流，从而提高转换效率；
3. 减少贵金属银电极的遮盖面积，降低电池成本。
附图说明：
图1所示为本发明的基本结构示意图。
图中，1.正面金属电极、2.氮化硅薄膜、3.石墨烯薄膜、4.N型硅薄层、5.P型硅基体、6.背面金属电极。
具体实施方式：
为了更好地理解本发明，下面用具体实例来详细说明本发明的技术方案，但是本发明并不局限于此。
实施例1
如说明书附图图1所示，本发明一种石墨烯硅太阳电池由上而下依次包括以下结构：正面金属电极1、氮化硅薄膜2、石墨烯薄膜3、N型硅薄层4、P型硅基体5和背面金属电极6构成。
所述的一种石墨烯硅太阳电池的制作方法如下：
1）将p型多晶硅片浸入HF:HNO3=2:1的混合液中进行制绒处理，在P型硅基体5表面形成绒面；
2）把制绒后的硅片放入扩散炉进行磷扩散形成N型硅薄层4，扩散温度890℃，扩散方阻在80-90欧姆，结深约0.2-0.5μm；
3）采用HF+HNO3一定比例混合液对扩散后硅片进行刻边处理，然后使用HF酸进行清洗及去除氧化层；
4）使用化学气相沉积法在N型硅薄层4上制作5nm石墨烯薄层3，然后再使用PECVD法镀上氮化硅薄膜2，厚度大约80-90nm。
5）将镀膜后的硅片背面印刷Ag电极及Al背场浆料并烘干，在n型掺杂的正面印刷Ag浆料，然后通过带式烧结炉烧结，烧结温度为930-960℃,完成石墨烯电池的制作。
按照上述实验的结果：采用多晶硅片制作的电池效率提升0.1%，同时银浆的消耗量降低8%。
实施例2
如说明书附图图1所示，本发明一种石墨烯硅太阳电池由上而下依次包括以下结构：正面金属电极1、氮化硅薄膜2、石墨烯薄膜3、N型硅薄层4、P型硅基体5和背面金属电极6构成。
所述的一种石墨烯硅太阳电池的制作方法如下：
1）将p型多晶硅片浸入HF:HNO3=2:1的混合液中进行制绒处理，在P型硅基体5表面形成绒面；
2）把制绒后的硅片放入扩散炉进行磷扩散形成N型硅薄层4，扩散温度890℃，扩散方阻在80-90欧姆，结深约0.2-0.5μm；
3）采用HF+HNO3一定比例混合液对扩散后硅片进行刻边处理，然后使用HF酸进行清洗及去除氧化层；
4）使用化学气相沉积法在N型硅薄层4上制作8nm石墨烯薄层3，然后再使用PECVD法镀上氮化硅薄膜2，厚度大约80-90nm。
5）将镀膜后的硅片背面印刷Ag电极及Al背场浆料并烘干，在n型掺杂的正面印刷Ag浆料，然后通过带式烧结炉烧结，烧结温度为930-960℃,完成石墨烯电池的制作。
按照上述实验的结果：采用多晶硅片制作的电池效率提升0.08%，同时银浆的消耗量降低10%。
Claims (4)
1.一种石墨烯硅太阳电池，其特征在于，由上而下依次包括以下结构：正面金属电极、氮化硅薄膜、石墨烯薄膜、N型硅薄层、P型硅基体和背面金属电极构成；
正面金属电极穿透氮化硅薄膜和石墨烯薄膜与N型硅薄层接触，正面金属电极为Ag电极；
氮化硅薄膜厚度为80-90nm，石墨烯薄膜厚度为1-10nm，N型硅薄层扩散方阻为80-100欧姆，结深0.2-0.5μm。
2. 如权利要求1所述的一种石墨烯硅太阳电池的制作方法，其特征在于，包括以下步骤：
（1）将P型基体单晶或多晶硅片放在化学溶液中将表面腐蚀成绒面结构；
（2）通过将磷原子高温扩散或者磷离子注入法完成正面磷掺杂，形成N型硅薄层；
（3）通过化学溶液或等离子法对硅片进行刻蚀去边并清洗；
（4）在N型硅薄层上制备生成石墨烯薄层；
（5）通过PECVD法镀上氮化硅薄层；
（6）印刷正面与背面电极。
3.根据权利要求2所述的一种石墨烯硅太阳电池的制作方法，其特征在于，步骤（4）所述的石墨烯薄层通过化学气相沉积法、碳化硅表面外延法、氧化减薄法、粘胶带法或硅表面生长法来实现。
4. 根据权利要求2所述的一种石墨烯硅太阳电池的制作方法，其特征在于，步骤（4）所述的石墨烯薄层为一层以上石墨烯。
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| CN106505124A (zh) * | 2016-11-28 | 2017-03-15 | 戚明海 | 一种石墨烯硅基太阳能电池及其制造方法 |
| CN110112229A (zh) * | 2019-04-29 | 2019-08-09 | 国家电投集团西安太阳能电力有限公司 | 一种无细栅的太阳能电池 |
| CN114843357A (zh) * | 2022-04-14 | 2022-08-02 | 上海明湖科技有限公司 | 一种石墨烯电池及其制作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311323A (zh) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | 一种石墨烯/硅太阳电池及其制造方法 |
| CN203242640U (zh) * | 2013-02-25 | 2013-10-16 | 中国东方电气集团有限公司 | 一种具有透明电极的晶硅太阳能电池 |
| CN103746013A (zh) * | 2014-01-20 | 2014-04-23 | 广东瑞德兴阳光伏科技有限公司 | 一种石墨烯太阳能电池及其制备方法 |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203242640U (zh) * | 2013-02-25 | 2013-10-16 | 中国东方电气集团有限公司 | 一种具有透明电极的晶硅太阳能电池 |
| CN103311323A (zh) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | 一种石墨烯/硅太阳电池及其制造方法 |
| CN103746013A (zh) * | 2014-01-20 | 2014-04-23 | 广东瑞德兴阳光伏科技有限公司 | 一种石墨烯太阳能电池及其制备方法 |
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