CN110112229A - 一种无细栅的太阳能电池 - Google Patents
一种无细栅的太阳能电池 Download PDFInfo
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- CN110112229A CN110112229A CN201910358920.3A CN201910358920A CN110112229A CN 110112229 A CN110112229 A CN 110112229A CN 201910358920 A CN201910358920 A CN 201910358920A CN 110112229 A CN110112229 A CN 110112229A
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- thin grid
- solar battery
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- graphene
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- 238000000034 method Methods 0.000 claims abstract description 48
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 230000033116 oxidation-reduction process Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000001652 electrophoretic deposition Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 4
- 238000007650 screen-printing Methods 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 12
- 239000013078 crystal Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 235000008216 herbs Nutrition 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 241001347978 Major minor Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910358920.3A CN110112229A (zh) | 2019-04-29 | 2019-04-29 | 一种无细栅的太阳能电池 |
Applications Claiming Priority (1)
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CN201910358920.3A CN110112229A (zh) | 2019-04-29 | 2019-04-29 | 一种无细栅的太阳能电池 |
Publications (1)
Publication Number | Publication Date |
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CN110112229A true CN110112229A (zh) | 2019-08-09 |
Family
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Family Applications (1)
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CN201910358920.3A Pending CN110112229A (zh) | 2019-04-29 | 2019-04-29 | 一种无细栅的太阳能电池 |
Country Status (1)
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CN (1) | CN110112229A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113035977A (zh) * | 2021-04-28 | 2021-06-25 | 广东爱旭科技有限公司 | 防烧穿pn结的perc电池、电池组件和光伏系统 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104134706A (zh) * | 2014-07-17 | 2014-11-05 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN205231076U (zh) * | 2015-11-02 | 2016-05-11 | 钧石(中国)能源有限公司 | 一种异质结太阳能电池 |
CN105702757A (zh) * | 2016-04-07 | 2016-06-22 | 乐叶光伏科技有限公司 | 一种晶体硅太阳能电池透明导电组合体及其制备方法 |
CN205564766U (zh) * | 2016-04-06 | 2016-09-07 | 乐叶光伏科技有限公司 | 一种具有二维电极结构的 p 型晶体硅太阳能电池 |
CN105957905A (zh) * | 2016-06-21 | 2016-09-21 | 常州天合光能有限公司 | 无细栅线晶硅太阳能电池及其制备方法 |
US20170110616A1 (en) * | 2014-03-21 | 2017-04-20 | Brookhaven Science Associates, Llc | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS |
CN208028070U (zh) * | 2017-11-24 | 2018-10-30 | 比亚迪股份有限公司 | 一种太阳能电池片及电池片阵列和组件 |
-
2019
- 2019-04-29 CN CN201910358920.3A patent/CN110112229A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170110616A1 (en) * | 2014-03-21 | 2017-04-20 | Brookhaven Science Associates, Llc | HOLE BLOCKING, ELECTRON TRANSPORTING AND WINDOW LAYER FOR OPTIMIZED Culn (1-x)Ga(x)Se2 SOLAR CELLS |
CN104134706A (zh) * | 2014-07-17 | 2014-11-05 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN205231076U (zh) * | 2015-11-02 | 2016-05-11 | 钧石(中国)能源有限公司 | 一种异质结太阳能电池 |
CN205564766U (zh) * | 2016-04-06 | 2016-09-07 | 乐叶光伏科技有限公司 | 一种具有二维电极结构的 p 型晶体硅太阳能电池 |
CN105702757A (zh) * | 2016-04-07 | 2016-06-22 | 乐叶光伏科技有限公司 | 一种晶体硅太阳能电池透明导电组合体及其制备方法 |
CN105957905A (zh) * | 2016-06-21 | 2016-09-21 | 常州天合光能有限公司 | 无细栅线晶硅太阳能电池及其制备方法 |
CN208028070U (zh) * | 2017-11-24 | 2018-10-30 | 比亚迪股份有限公司 | 一种太阳能电池片及电池片阵列和组件 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113035977A (zh) * | 2021-04-28 | 2021-06-25 | 广东爱旭科技有限公司 | 防烧穿pn结的perc电池、电池组件和光伏系统 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200825 Address after: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant after: Huanghe hydropower Xining Solar Power Co.,Ltd. Applicant after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant after: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Applicant before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Applicant before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Applicant before: QINGHAI HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Applicant before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20190809 |