CN106558628A - 一种cigs薄膜太阳能电池窗口层的制备方法 - Google Patents
一种cigs薄膜太阳能电池窗口层的制备方法 Download PDFInfo
- Publication number
- CN106558628A CN106558628A CN201510630858.0A CN201510630858A CN106558628A CN 106558628 A CN106558628 A CN 106558628A CN 201510630858 A CN201510630858 A CN 201510630858A CN 106558628 A CN106558628 A CN 106558628A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- bzo
- layer
- layers
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 21
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 15
- 239000011701 zinc Substances 0.000 claims abstract description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 32
- 239000011787 zinc oxide Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 230000035484 reaction time Effects 0.000 claims description 6
- QMXBEONRRWKBHZ-UHFFFAOYSA-N [Na][Mo] Chemical compound [Na][Mo] QMXBEONRRWKBHZ-UHFFFAOYSA-N 0.000 claims description 5
- 210000001142 back Anatomy 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 230000003111 delayed effect Effects 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 2
- 230000008859 change Effects 0.000 abstract description 2
- 230000006378 damage Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 58
- 210000004027 cell Anatomy 0.000 description 21
- 238000000034 method Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 229960001296 zinc oxide Drugs 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
一种CIGS薄膜太阳能电池窗口层的制备方法，步骤1、清洗沉积有硫化镉的CdS缓冲层衬底；步骤2、利用低压化学气相沉积法(LPCVD)依次制备本征氧化锌层和BZO导电窗口层，步骤依次为：先将步骤1清洗好的硫化镉缓冲层衬底，传入TCO设备的预热腔体中真空预热；再将预热好的衬底送入TCO设备的反应腔室，分以下两个阶段沉积：第一阶段生长i-ZnO层；第二阶段生长BZO导电窗口。本发明制备工艺简单，反应温度低，而且在水汽保护下，不会对电池产生破坏，可在一定程度上形成退火处理，使得电池结构更为紧密；其次，通过连续改变B2H6流量，可形成梯度结构的BZO层，改善光电性能，增加其电池转化效率。
Description
技术领域
本发明涉及太阳能电池制造工艺，特别涉及用于一种CIGS薄膜太阳能电池窗口层的制备方法。
背景技术
铜铟镓硒(CIGS)薄膜太阳能电池具有低成本、高效率、稳定性好等优点，是公认的最具有发展和市场潜力的第二代太阳能电池。人们对其研究兴起于上个世纪八十年代初，经过三十多年发展，CIGS薄膜太阳能电池的理论研究以及制备工艺取得了可喜的成果。CIGS薄膜太阳能电池的最高实验室光电转化效率达到21.7％。柔性衬底的CIGS薄膜太阳能电池以可绕曲的金属箔或者聚合物箔为衬底，其在空间应用是比较理想的光伏器件。CIGS柔性薄膜太阳能电池不仅重量比功率高，而且可弯曲折叠，不怕碰摔，可以应用在很多特殊的场合，包括屋顶、衣服上、汽车顶部以及航空航天领域等等，具有广阔的应用范围和市场空间。
传统的CIGS薄膜光伏电池普遍采用ZnO：Al(AZO)透明电极作为窗口层。制备过程多采用磁控溅射法制备，不具备绒面结构，还得再镀一层减反膜MgF2减小AZO对光的反射，增加光的吸收作用。尽管研究工作者通过对薄膜工艺进行改善，降低Al的浓度同时进行掺H处理，或者对窗口层进行绒面处理形成“陷光结构”，但是这些方法并不能完全避免窗口层薄膜在近红外波段的吸收损耗，而且使电池的制备工艺更加繁琐，不利于CIGS薄膜太阳能电池生产成本的降低。
发明内容
针对上述现有技术的不足，本发明提出一种CIGS薄膜太阳能电池窗口层的制备方法。主要解决传统CIGS薄膜太阳能电池窗口层制备工艺复杂、光电性能不理想问题。
本发明的技术方案为：
一种CIGS薄膜太阳能电池窗口层的制备方法，其步骤为：
步骤1、清洗沉积有硫化镉的CdS缓冲层衬底：
利用清洗机，采用中高压DI水喷淋、风力高温烘干；
步骤2、利用低压化学气相沉积法(LPCVD)依次制备本征氧化锌层和BZO导电窗口层，步骤依次为：
2-1、先将步骤1清洗好的硫化镉缓冲层衬底，传入TCO设备的预热腔体中真空预热，温度为160-260℃，预热时间为2-10min；
2-2、再将预热好的衬底送入TCO设备的反应腔室，分以下两个阶段沉积：
2-2-1、第一阶段生长i-ZnO层，反应时间为0.5-5min，温度为150-250℃，各气体流量分别为：DEZn 250-600sccm、H2O 300-700sccm、B2H6 50-225sccm；
2-2-2、第二阶段生长BZO导电窗口层，反应时间为4-10min，温度为150-250℃，各气体流量为DEZn 100-600sccm、H2O 100-700sccm、B2H650-225sccm，其中B2H6的通入流量随沉积时间逐渐增大，形成梯度结构，提高太阳能电池的效率；所述的梯度结构为BZO层，晶粒尺寸下大上小；B2H6通入反应腔前B2H6是经H2稀释过的，稀释浓度为B2H6体积0.5％-2％，所述的本征氧化锌i-ZnO层的厚度为20-100nm；所述的BZO层厚度为100-1000nm。
本发明的技术效果是：
本发明制备的CIGS薄膜太阳能电池窗口层，ZnO：B层作为CIGS太阳能电池结构的透明导电窗口层，比传统导电窗口层ZnO：Al层具有更低方块电阻，而且通过LPCVD法制备出的透明导电氧化ZnO：B层，直接具有“绒面结构”结构，可作为前电极，提高电池对光的利用率的同时降低了生产成本。本发明的优势在于，制备工艺简单，反应温度低，而且在水汽保护下，不会对电池产生破坏，可在一定程度上形成退火处理，使得电池结构更为紧密；其次，通过连续改变B2H6流量，可形成梯度结构的BZO层，改善光电性能，增加其电池转化效率，更好的促进目前CIGS的发展，在大规模生产具有重要的参考价值。
附图说明
图1为CIGS薄膜太阳能电池的整体结构图。
图中：1、基体；2、阻挡层；3、钼背电极层；4、钼钠层；5、CIGS光吸收层；6、CdS缓冲层；7、本征氧化锌层；8、硼掺杂氧化锌导电窗口层(BZO导电窗口层)；9、表面金属电极层。
具体实施方式
本发明涉及一种CIGS薄膜太阳能电池窗口层的制备方法。以下简单叙述CIGS的基本结构，重点以案例形式阐述CIGS薄膜太阳能电池窗口层的制备方法。
图1为CIGS薄膜太阳能电池的整体结构。其中，基底1可为柔性不锈钢、铝、镍、铂或其合金的衬底，厚度为10-100μm，也可以为硬质玻璃，柔性玻璃衬底，其厚度为0.2-5mm。阻挡层2为铬、钛化钨合金等，厚度为10-200nm，能有效的阻挡柔性金属基板1作为衬底时金属杂质对上层的CIGS光吸收层5扩散影响。钼背电极层3作为整个CIGS薄膜太阳能电池的背电极，厚度是200-1500nm。钼钠层4是钼钠预置层，其厚度是10-300nm。CIGS光吸收层5在整个电池中作为p型电极，其厚度是1-3μm。CdS(硫化镉)缓冲层6是连接CIGS光吸收层5和本征氧化锌(i-ZnO)层7之间的中间层结构，调节带隙和晶格匹配，起到缓冲的桥梁作用，同时作为电池器件N极的组成部分；其厚度30nm-50nm。本征氧化锌(i-ZnO)层7作为整个CIGS太阳能电池器件的N极，本征氧化锌层7的厚度为20-100nm。CIGS光吸收层5与硫化镉缓冲层6及本征氧化锌层7形成太阳能电池的PN结。硼掺杂氧化锌导电窗口层(BZO导电窗口层)8作为整个CIGS太阳能电池的透明导电氧化物窗口层，硼掺杂氧化锌(BZO)窗口层，可将太阳能电池表面的入射光收集，减少因界面反射造成的损失，能保护电池内部结果的同时增加电池的光学性能，其厚度为100-1000nm。在导电窗口层8上配置表面金属电极栅线9。表面金属电极栅线9由银浆组成，通过丝网印刷技术印刷在电池表面烧结形成。主要作用就是收集表面的光生载流子，输出电子。因为它是不透光的，所以必须细小，成网栅状结构分布在导电窗口层8表面，减少串联电阻和效率损失。
制备CIGS薄膜太阳能电池窗口层的前期工作为：
依次沉积完阻挡层、钼背电极层、钼钠层、CIGS光吸收层和CdS缓冲层后，进行清洗，传送入TCO设备预热腔体中真空预热，温度为230℃，预热时间为5min；再将预热好的CdS缓冲层衬底送入低压化学气相沉积设备(以下简称TCO设备)的反应腔室，反应温度为200℃。反应结束后，将反应好的衬底传送到第三个腔体，冷却室，通过通入冷氮快速降低衬底温度，加快工作效率，同时在保护气氛的下，能防止薄膜氧化，稳定电池的性能。
本发明CIGS薄膜太阳能电池窗口层的制备方法为：
步骤1、清洗沉积有硫化镉的(CdS)缓冲层衬底：
利用清洗机，采用中高压DI水喷淋、风力高温烘干。
步骤2、利用低压化学气相沉积法(LPCVD)依次制备本征氧化锌层和BZO导电窗口层；步骤依次为：
2-1、先将步骤1清洗好的硫化镉缓冲层衬底，传入TCO设备的预热腔体中真空预热，温度为160-260℃，预热时间为2-10min；
2-2、再将预热好的衬底送入TCO设备的反应腔室，分以下两个阶段沉积：
2-2-1、第一阶段生长i-ZnO层，反应时间为0.5-5min，温度为150-250℃，各气体流量分别为DEZn(250-600sccm)、H2O(300-700sccm)、B2H6(0sccm)；
2-2-2、第二阶段生长硼掺杂氧化锌(BZO)层，反应时间为4-10min，温度为150-250℃，各气体流量为DEZn(100-600sccm)、H2O(100-700sccm)、B2H6(0-225sccm)，其中B2H6的通入流量是随沉积时间逐渐增大的，这样可以形成梯度结构，有利于改善太阳能电池光学性能，从而提高太阳能电池的效率。所述的梯度结构为BZO层晶粒尺寸下大上小，这种结构很有利于光学电学综合性能的改善，从而对提高电池的效率有很大的帮助。其形成原因由于B2H6在低流量掺杂ZnO时，形成的BZO晶体尺寸较大，B2H6在高流量掺杂ZnO时，形成的BZO晶体尺寸较小。所采用的LPCVD工艺原理是气体DEZn(二乙基锌)作为锌源，H2O(水蒸汽)作为氧源，反应生成ZnO；B2H6(硼烷)属于掺杂气体，通入反应腔前B2H6是经H2稀释过的，稀释浓度为B2H6体积0.5％-2％(即H2占的比例为88％-99.5％)，其通入反应腔流量为0-225sccm，作用主要是提高ZnO的导电性能，形成透明导电氧化物薄膜(BZO)窗口层。本发明所述的本征氧化锌i-ZnO层的厚度为20-100nm；所述的BZO层厚度为100-1000nm。
Claims (10)
1.一种CIGS薄膜太阳能电池，依次包括基底、阻挡层、钼背电极层、钼钠层、CIGS光吸收层、CdS缓冲层、本征氧化锌层和BZO导电窗口层；在BZO导电窗口层上配置表面金属电极层，表面金属电极层由银浆组成，通过丝网印刷技术印刷在电池表面烧结形成，其不透光，成网栅状结构分布在BZO导电窗口层表面。
2.根据权利要求1所述的太阳能电池，其特征在于：基底为柔性不锈钢、铝、镍、铂或其合金的衬底，厚度为10-100μm；或，基底为硬质玻璃或柔性玻璃衬底，其厚度为0.2-5mm。
3.根据权利要求1所述的太阳能电池，其特征在于：阻挡层为铬或钛化钨合金，厚度为10-200nm。
4.根据权利要求1所述的太阳能电池，其特征在于：钼背电极层作为整个CIGS薄膜太阳能电池的背电极，厚度是200-1500nm。
5.根据权利要求1所述的太阳能电池，其特征在于：钼钠层是钼钠预置层，其厚度是10-300nm。
6.根据权利要求1所述的太阳能电池，其特征在于：CIGS光吸收层在整个电池中作为p型电极，其厚度是1-3μm。
7.根据权利要求1所述的太阳能电池，其特征在于：本征氧化锌层作为整个CIGS太阳能电池器件的N极，本征氧化锌层7的厚度为20-100nm。
8.根据权利要求1、6或7所述的太阳能电池，其特征在于：CdS缓冲层作为CIGS薄膜太阳能电池的衬底，是连接CIGS光吸收层和本征氧化锌层之间的结构，起到缓冲的桥梁作用，其厚度30nm-50nm；CIGS光吸收层与硫化镉缓冲层及本征氧化锌层形成PN结。
9.根据权利要求1所述的太阳能电池，其特征在于：BZO导电窗口层作为整个CIGS太阳能电池的透明导电氧化物窗口层，厚度为100-1000nm。
10.一种CIGS薄膜太阳能电池窗口层的制备方法，其步骤为：
步骤1、清洗沉积有硫化镉的CdS缓冲层衬底：
利用清洗机，采用中高压DI水喷淋、风力高温烘干；
步骤2、利用低压化学气相沉积法(LPCVD)依次制备本征氧化锌层和BZO导电窗口层，步骤依次为：
2-1、先将步骤1清洗好的硫化镉缓冲层衬底，传入TCO设备的预热腔体中真空预热，温度为160-260℃，预热时间为2-10min；
2-2、再将预热好的衬底送入TCO设备的反应腔室，分以下两个阶段沉积：
2-2-1、第一阶段生长i-ZnO层，反应时间为0.5-5min，温度为150-250℃，各气体流量分别为：DEZn 250-600sccm、H2O 300-700sccm、B2H6 50-225sccm；
2-2-2、第二阶段生长BZO导电窗口层，反应时间为4-10min，温度为150-250℃，各气体流量为DEZn 100-600sccm、H2O 100-700sccm、B2H6 50-225sccm，其中B2H6的通入流量随沉积时间逐渐增大，形成梯度结构，提高太阳能电池的效率；所述的梯度结构为BZO层，晶粒尺寸下大上小；B2H6通入反应腔前B2H6是经H2稀释过的，稀释浓度为B2H6体积0.5％-2％，所述的本征氧化锌i-ZnO层的厚度为20-100nm；所述的BZO层厚度为100-1000nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510630858.0A CN106558628A (zh) | 2015-09-30 | 2015-09-30 | 一种cigs薄膜太阳能电池窗口层的制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510630858.0A CN106558628A (zh) | 2015-09-30 | 2015-09-30 | 一种cigs薄膜太阳能电池窗口层的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106558628A true CN106558628A (zh) | 2017-04-05 |
Family
ID=58416797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510630858.0A Withdrawn CN106558628A (zh) | 2015-09-30 | 2015-09-30 | 一种cigs薄膜太阳能电池窗口层的制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106558628A (zh) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994079A (zh) * | 2017-08-11 | 2018-05-04 | 北京汉能光伏投资有限公司 | 柔性薄膜电池及其制备方法 |
| CN110098333A (zh) * | 2019-05-08 | 2019-08-06 | 蜂巢能源科技有限公司 | 钙钛矿吸收层的制备方法及钙钛矿太阳能电池的加工方法 |
| CN110444622A (zh) * | 2019-06-26 | 2019-11-12 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池窗口层的制备方法 |
| WO2020020217A1 (zh) * | 2018-07-24 | 2020-01-30 | 领凡新能源科技(北京)有限公司 | 铜铟镓硒薄膜太阳能电池芯片的缓冲层及其制备方法、铜铟镓硒薄膜太阳能电池芯片 |
| CN113471306A (zh) * | 2021-06-01 | 2021-10-01 | 安徽华晟新能源科技有限公司 | 一种异质结电池及异质结电池的制备方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102168256A (zh) * | 2011-03-21 | 2011-08-31 | 南开大学 | 利用MOCVD梯度掺杂技术生长ZnO：B薄膜及应用 |
| CN102544138A (zh) * | 2012-02-08 | 2012-07-04 | 南开大学 | 一种设置AlN薄膜层的铜铟镓硒薄膜太阳电池 |
| CN202855752U (zh) * | 2012-11-07 | 2013-04-03 | 厦门神科太阳能有限公司 | Cigs基薄膜太阳能电池 |
| CN103872154A (zh) * | 2014-03-28 | 2014-06-18 | 厦门大学 | 一种含钠钼膜及其制备方法和应用 |
| CN205122601U (zh) * | 2015-09-30 | 2016-03-30 | 常德汉能薄膜太阳能科技有限公司 | 一种cigs薄膜太阳能电池 |
-
2015
- 2015-09-30 CN CN201510630858.0A patent/CN106558628A/zh not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102168256A (zh) * | 2011-03-21 | 2011-08-31 | 南开大学 | 利用MOCVD梯度掺杂技术生长ZnO：B薄膜及应用 |
| CN102544138A (zh) * | 2012-02-08 | 2012-07-04 | 南开大学 | 一种设置AlN薄膜层的铜铟镓硒薄膜太阳电池 |
| CN202855752U (zh) * | 2012-11-07 | 2013-04-03 | 厦门神科太阳能有限公司 | Cigs基薄膜太阳能电池 |
| CN103872154A (zh) * | 2014-03-28 | 2014-06-18 | 厦门大学 | 一种含钠钼膜及其制备方法和应用 |
| CN205122601U (zh) * | 2015-09-30 | 2016-03-30 | 常德汉能薄膜太阳能科技有限公司 | 一种cigs薄膜太阳能电池 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994079A (zh) * | 2017-08-11 | 2018-05-04 | 北京汉能光伏投资有限公司 | 柔性薄膜电池及其制备方法 |
| WO2020020217A1 (zh) * | 2018-07-24 | 2020-01-30 | 领凡新能源科技(北京)有限公司 | 铜铟镓硒薄膜太阳能电池芯片的缓冲层及其制备方法、铜铟镓硒薄膜太阳能电池芯片 |
| CN110098333A (zh) * | 2019-05-08 | 2019-08-06 | 蜂巢能源科技有限公司 | 钙钛矿吸收层的制备方法及钙钛矿太阳能电池的加工方法 |
| CN110098333B (zh) * | 2019-05-08 | 2022-04-29 | 无锡极电光能科技有限公司 | 钙钛矿吸收层的制备方法及钙钛矿太阳能电池的加工方法 |
| CN110444622A (zh) * | 2019-06-26 | 2019-11-12 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池窗口层的制备方法 |
| CN113471306A (zh) * | 2021-06-01 | 2021-10-01 | 安徽华晟新能源科技有限公司 | 一种异质结电池及异质结电池的制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207320169U (zh) | 一种渐变带隙的钙钛矿电池 | |
| CN106601855A (zh) | 一种双面发电异质结太阳能电池的制备方法 | |
| CN106558628A (zh) | 一种cigs薄膜太阳能电池窗口层的制备方法 | |
| CN205122601U (zh) | 一种cigs薄膜太阳能电池 | |
| CN102270705B (zh) | 一种双结构绒面透明导电电极的制备方法 | |
| CN102332499B (zh) | 一种利用微颗粒制备双结构绒面透明电极的方法 | |
| CN106024937A (zh) | 一种cigs基薄膜太阳能电池及其制备方法 | |
| CN107342331B (zh) | 一种t型顶电极背反射薄膜太阳电池的生产工艺 | |
| CN101510568A (zh) | 非晶硅/染料敏化叠层薄膜太阳电池及其制备方法 | |
| CN207542252U (zh) | 一种晶体硅太阳能电池结构 | |
| CN102157572A (zh) | 晶体硅太阳能电池 | |
| CN110911525B (zh) | 一种柔性CdTe薄膜太阳能电池的制备方法 | |
| CN202259324U (zh) | 无栅线p型晶体硅太阳能电池 | |
| CN105355681B (zh) | 一种溅射靶材及用该溅射靶材制作的cigs基薄膜太阳能电池 | |
| CN101882653B (zh) | 基于纳米CdS薄膜的太阳能电池制备方法 | |
| CN105244394B (zh) | 一种cigs基薄膜太阳能电池及其制备方法 | |
| CN106409961B (zh) | 一种n-Si/CdSSe叠层太阳电池及其制备方法 | |
| CN101707219B (zh) | 本征隔离结构太阳能电池及其制造方法 | |
| CN105047738B (zh) | 溅射靶材及用该溅射靶材制作的cigs基薄膜太阳能电池 | |
| CN111354814B (zh) | 一种双结叠层太阳能电池及其制备方法 | |
| CN103280496A (zh) | 一种晶体硅异质结/微晶硅薄膜叠层光伏电池的制备方法 | |
| CN208284484U (zh) | 一种cigs光伏叠瓦组件 | |
| CN207925499U (zh) | 一种Cu2ZnSn(S,Se)4薄膜太阳能电池 | |
| CN208000925U (zh) | 一种太阳能电池 | |
| CN203325950U (zh) | 一种多带隙双面透光太阳能电池 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20170405 |
|
| WW01 | Invention patent application withdrawn after publication |