CN107994079A - 柔性薄膜电池及其制备方法 - Google Patents
柔性薄膜电池及其制备方法 Download PDFInfo
- Publication number
- CN107994079A CN107994079A CN201710684582.3A CN201710684582A CN107994079A CN 107994079 A CN107994079 A CN 107994079A CN 201710684582 A CN201710684582 A CN 201710684582A CN 107994079 A CN107994079 A CN 107994079A
- Authority
- CN
- China
- Prior art keywords
- layer
- flexible
- film battery
- flexible substrate
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims description 71
- 239000010936 titanium Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 25
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 22
- 229910001220 stainless steel Inorganic materials 0.000 claims description 16
- 239000010935 stainless steel Substances 0.000 claims description 16
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 14
- 230000001154 acute effect Effects 0.000 claims description 10
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 8
- 239000011684 sodium molybdate Substances 0.000 claims description 8
- 235000015393 sodium molybdate Nutrition 0.000 claims description 7
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims 4
- 235000013024 sodium fluoride Nutrition 0.000 claims 2
- 239000011775 sodium fluoride Substances 0.000 claims 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 26
- 229910052751 metal Inorganic materials 0.000 description 30
- 239000002184 metal Substances 0.000 description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 25
- 238000001755 magnetron sputter deposition Methods 0.000 description 20
- 239000011787 zinc oxide Substances 0.000 description 20
- 230000005611 electricity Effects 0.000 description 10
- 238000002310 reflectometry Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000004411 aluminium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 238000002207 thermal evaporation Methods 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710684582.3A CN107994079A (zh) | 2017-08-11 | 2017-08-11 | 柔性薄膜电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710684582.3A CN107994079A (zh) | 2017-08-11 | 2017-08-11 | 柔性薄膜电池及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107994079A true CN107994079A (zh) | 2018-05-04 |
Family
ID=62029705
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710684582.3A Pending CN107994079A (zh) | 2017-08-11 | 2017-08-11 | 柔性薄膜电池及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107994079A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630768A (zh) * | 2018-07-05 | 2018-10-09 | 深圳大学 | 一种用于薄膜太阳电池的表面陷光阵列结构及制备方法 |
CN108987492A (zh) * | 2018-09-25 | 2018-12-11 | 汉能新材料科技有限公司 | 光伏组件、阻水膜及其制造方法 |
CN110120436A (zh) * | 2019-04-26 | 2019-08-13 | 圣晖莱南京能源科技有限公司 | 一种双节型cigs太阳能电池及其制备方法 |
CN110767756A (zh) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池及其制备方法 |
CN113054040A (zh) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光导开关的衬底以及具有该衬底的光导开关 |
CN113380913A (zh) * | 2021-05-13 | 2021-09-10 | 西安埃德迈光电科技有限公司 | 一种超柔薄膜电池组件结构及制备方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101944541A (zh) * | 2009-07-08 | 2011-01-12 | 深圳先进技术研究院 | 薄膜光伏电池及其制造方法 |
CN102231398A (zh) * | 2011-06-29 | 2011-11-02 | 中国科学院深圳先进技术研究院 | 具有绒面的铜铟镓硒薄膜电池及其制备方法 |
KR20130014985A (ko) * | 2011-08-01 | 2013-02-12 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
US20140026958A1 (en) * | 2011-04-08 | 2014-01-30 | Lg Innotek Co., Ltd. | Solar cell and manufacturing method thereof |
KR20140058792A (ko) * | 2012-11-06 | 2014-05-15 | 엘에스엠트론 주식회사 | 박막형 태양전지 및 그 제조방법 |
CN104752557A (zh) * | 2013-12-31 | 2015-07-01 | 中国电子科技集团公司第十八研究所 | 陷光结构铜铟镓硒薄膜太阳电池的制备方法 |
CN105023961A (zh) * | 2015-08-24 | 2015-11-04 | 中国工程物理研究院材料研究所 | 一种柔性铜锌锡硫薄膜太阳能电池及其制备方法 |
CN105355676A (zh) * | 2015-11-18 | 2016-02-24 | 北京四方创能光电科技有限公司 | 一种柔性cigs薄膜太阳电池的背电极结构 |
CN105590973A (zh) * | 2014-11-17 | 2016-05-18 | 中国电子科技集团公司第十八研究所 | 一种具有高结合力吸收层的柔性薄膜太阳电池 |
CN105742388A (zh) * | 2014-12-10 | 2016-07-06 | 北京汉能创昱科技有限公司 | 一种多元化合物薄膜太阳能电池及其制备方法 |
CN106558628A (zh) * | 2015-09-30 | 2017-04-05 | 常德汉能薄膜太阳能科技有限公司 | 一种cigs薄膜太阳能电池窗口层的制备方法 |
CN106653898A (zh) * | 2016-11-04 | 2017-05-10 | 中利腾晖光伏科技有限公司 | 一种czts太阳能电池 |
CN206259365U (zh) * | 2016-11-22 | 2017-06-16 | 浙江昱辉阳光能源江苏有限公司 | 一种铜铟镓硒薄膜太阳能电池 |
CN207124198U (zh) * | 2017-08-11 | 2018-03-20 | 北京汉能光伏投资有限公司 | 柔性薄膜电池 |
-
2017
- 2017-08-11 CN CN201710684582.3A patent/CN107994079A/zh active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101944541A (zh) * | 2009-07-08 | 2011-01-12 | 深圳先进技术研究院 | 薄膜光伏电池及其制造方法 |
US20140026958A1 (en) * | 2011-04-08 | 2014-01-30 | Lg Innotek Co., Ltd. | Solar cell and manufacturing method thereof |
CN102231398A (zh) * | 2011-06-29 | 2011-11-02 | 中国科学院深圳先进技术研究院 | 具有绒面的铜铟镓硒薄膜电池及其制备方法 |
KR20130014985A (ko) * | 2011-08-01 | 2013-02-12 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR20140058792A (ko) * | 2012-11-06 | 2014-05-15 | 엘에스엠트론 주식회사 | 박막형 태양전지 및 그 제조방법 |
CN104752557A (zh) * | 2013-12-31 | 2015-07-01 | 中国电子科技集团公司第十八研究所 | 陷光结构铜铟镓硒薄膜太阳电池的制备方法 |
CN105590973A (zh) * | 2014-11-17 | 2016-05-18 | 中国电子科技集团公司第十八研究所 | 一种具有高结合力吸收层的柔性薄膜太阳电池 |
CN105742388A (zh) * | 2014-12-10 | 2016-07-06 | 北京汉能创昱科技有限公司 | 一种多元化合物薄膜太阳能电池及其制备方法 |
CN105023961A (zh) * | 2015-08-24 | 2015-11-04 | 中国工程物理研究院材料研究所 | 一种柔性铜锌锡硫薄膜太阳能电池及其制备方法 |
CN106558628A (zh) * | 2015-09-30 | 2017-04-05 | 常德汉能薄膜太阳能科技有限公司 | 一种cigs薄膜太阳能电池窗口层的制备方法 |
CN105355676A (zh) * | 2015-11-18 | 2016-02-24 | 北京四方创能光电科技有限公司 | 一种柔性cigs薄膜太阳电池的背电极结构 |
CN106653898A (zh) * | 2016-11-04 | 2017-05-10 | 中利腾晖光伏科技有限公司 | 一种czts太阳能电池 |
CN206259365U (zh) * | 2016-11-22 | 2017-06-16 | 浙江昱辉阳光能源江苏有限公司 | 一种铜铟镓硒薄膜太阳能电池 |
CN207124198U (zh) * | 2017-08-11 | 2018-03-20 | 北京汉能光伏投资有限公司 | 柔性薄膜电池 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108630768A (zh) * | 2018-07-05 | 2018-10-09 | 深圳大学 | 一种用于薄膜太阳电池的表面陷光阵列结构及制备方法 |
CN110767756A (zh) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池及其制备方法 |
CN108987492A (zh) * | 2018-09-25 | 2018-12-11 | 汉能新材料科技有限公司 | 光伏组件、阻水膜及其制造方法 |
CN110120436A (zh) * | 2019-04-26 | 2019-08-13 | 圣晖莱南京能源科技有限公司 | 一种双节型cigs太阳能电池及其制备方法 |
CN110120436B (zh) * | 2019-04-26 | 2021-02-05 | 圣晖莱南京能源科技有限公司 | 一种双节型cigs太阳能电池及其制备方法 |
CN113054040A (zh) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光导开关的衬底以及具有该衬底的光导开关 |
CN113380913A (zh) * | 2021-05-13 | 2021-09-10 | 西安埃德迈光电科技有限公司 | 一种超柔薄膜电池组件结构及制备方法 |
CN113380913B (zh) * | 2021-05-13 | 2024-01-26 | 西安埃德迈光电科技有限公司 | 一种超柔薄膜电池组件结构及制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107994079A (zh) | 柔性薄膜电池及其制备方法 | |
CN104380476B (zh) | 用于类似铜铟亚盐酸太阳能电池的光伏器件的高反射率后接触 | |
CN102709402B (zh) | 基于图形化金属衬底的薄膜太阳电池及其制作方法 | |
CN207124198U (zh) | 柔性薄膜电池 | |
CN109346610A (zh) | 一种钙钛矿太阳能电池及其制备方法 | |
JP2013539241A (ja) | 太陽電池 | |
CN108630768A (zh) | 一种用于薄膜太阳电池的表面陷光阵列结构及制备方法 | |
JP2013098195A (ja) | 光電変換素子 | |
CN107275426A (zh) | 一种等离子体多尖端纳米结构太阳能电池及其制造方法 | |
CN204538089U (zh) | 基于石墨烯与纳米结构钙钛矿材料的光探测器 | |
CN109728173B (zh) | 薄膜太阳能电池及其制备方法 | |
JP5602234B2 (ja) | 太陽光発電装置及びその製造方法 | |
CN105244393B (zh) | 聚酰亚胺太阳能电池及其制备方法 | |
CN106298989A (zh) | 一种提高薄膜太阳能电池背电极和吸收层附着力的方法 | |
CN101777588A (zh) | 光散射多层结构及其制造方法 | |
US20140041721A1 (en) | Solar cell and manufacturing method thereof | |
CN109616545B (zh) | 提高晶硅太阳电池的背铝栅线和激光开槽对准精度的方法 | |
JP5947315B2 (ja) | 太陽電池 | |
JP2014504033A (ja) | 太陽電池及びその製造方法 | |
US20100139757A1 (en) | Photovoltaic cell structure | |
TWI430466B (zh) | 高效率碲化鎘薄膜太陽能電池之元件結構 | |
CN209169156U (zh) | 太阳能电池 | |
CN104952961A (zh) | 一种n-CdSxSe1-x薄膜/石墨烯肖特基结太阳能电池 | |
CN105304764B (zh) | 一种倒置结构太阳能电池制作方法 | |
CN110061075A (zh) | 一种金属Na掺杂的CIGS太阳能电池及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 101400 5 Fengxiang East Street, Yang Song Town, Huairou District, Beijing. Applicant after: BEIJING HANERGY OPTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 100107 0-A, an Li Road, Chaoyang District, Beijing. Applicant before: BEIJING HANERGY SOLAR POWER INVESTMENT Co.,Ltd. |
|
CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210113 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Beijing Huihong Technology Co.,Ltd. Address before: 101400 5 Fengxiang East Street, Yang Song Town, Huairou District, Beijing. Applicant before: BEIJING HANERGY OPTOVOLTAIC TECHNOLOGY Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20211027 Address after: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant after: Dongjun new energy Co.,Ltd. Address before: No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing Applicant before: Beijing Huihong Technology Co.,Ltd. |
|
TA01 | Transfer of patent application right |