CN104733557A - Hit太阳能电池及提高hit电池的短路电流密度的方法 - Google Patents
Hit太阳能电池及提高hit电池的短路电流密度的方法 Download PDFInfo
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- CN104733557A CN104733557A CN201510016048.6A CN201510016048A CN104733557A CN 104733557 A CN104733557 A CN 104733557A CN 201510016048 A CN201510016048 A CN 201510016048A CN 104733557 A CN104733557 A CN 104733557A
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 230000001965 increasing effect Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000002905 metal composite material Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000012528 membrane Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 5
- 230000007306 turnover Effects 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000005543 nano-size silicon particle Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000011712 cell development Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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Abstract
Description
Claims (16)
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CN201510016048.6A CN104733557B (zh) | 2015-01-13 | 2015-01-13 | Hit太阳能电池及提高hit电池的短路电流密度的方法 |
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CN201510016048.6A CN104733557B (zh) | 2015-01-13 | 2015-01-13 | Hit太阳能电池及提高hit电池的短路电流密度的方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206781A (zh) * | 2016-08-30 | 2016-12-07 | 陕西师范大学 | 一种单晶硅基异质结太阳能电池及其制备方法 |
CN110943136A (zh) * | 2018-09-25 | 2020-03-31 | 君泰创新(北京)科技有限公司 | 一种p型硅薄膜和太阳能电池及制备方法 |
CN111326606A (zh) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N型分片太阳能电池结构及其制作方法 |
CN111403538A (zh) * | 2018-12-28 | 2020-07-10 | 成都珠峰永明科技有限公司 | 太阳能电池及其制备方法 |
CN112151636A (zh) * | 2020-08-21 | 2020-12-29 | 隆基绿能科技股份有限公司 | 硅基异质结太阳电池及其制备方法 |
CN112736151A (zh) * | 2021-01-08 | 2021-04-30 | 上海交通大学 | 基于宽带隙窗口层的背结硅异质结太阳电池 |
CN114122154A (zh) * | 2021-10-11 | 2022-03-01 | 中国科学院电工研究所 | 一种载流子选择性钝化接触太阳电池及其制备方法 |
CN115148861A (zh) * | 2022-09-01 | 2022-10-04 | 福建金石能源有限公司 | 异质结太阳能电池的制作方法 |
Citations (8)
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CN101257052A (zh) * | 2008-04-07 | 2008-09-03 | 南开大学 | 硅基薄膜太阳电池用窗口材料及其制备方法 |
CN101677113A (zh) * | 2008-09-11 | 2010-03-24 | 应用材料股份有限公司 | 用于基于薄膜和晶片的太阳能应用的微晶硅合金 |
US20100229928A1 (en) * | 2009-03-12 | 2010-09-16 | Twin Creeks Technologies, Inc. | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element |
CN203218277U (zh) * | 2012-11-19 | 2013-09-25 | 湖南师范大学 | 一种hit太阳电池 |
CN203503678U (zh) * | 2012-07-23 | 2014-03-26 | 东莞市长安东阳光铝业研发有限公司 | 一种hit太阳能电池 |
CN103872176A (zh) * | 2012-12-18 | 2014-06-18 | 国际商业机器公司 | 具有集成光伏电池的器件及其制造方法 |
CN103904151A (zh) * | 2014-04-22 | 2014-07-02 | 河北工业大学 | 一种hit太阳能电池及其制备方法 |
WO2014175066A1 (ja) * | 2013-04-25 | 2014-10-30 | シャープ株式会社 | 光電変換素子 |
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2015
- 2015-01-13 CN CN201510016048.6A patent/CN104733557B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101257052A (zh) * | 2008-04-07 | 2008-09-03 | 南开大学 | 硅基薄膜太阳电池用窗口材料及其制备方法 |
CN101677113A (zh) * | 2008-09-11 | 2010-03-24 | 应用材料股份有限公司 | 用于基于薄膜和晶片的太阳能应用的微晶硅合金 |
US20100229928A1 (en) * | 2009-03-12 | 2010-09-16 | Twin Creeks Technologies, Inc. | Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element |
CN203503678U (zh) * | 2012-07-23 | 2014-03-26 | 东莞市长安东阳光铝业研发有限公司 | 一种hit太阳能电池 |
CN203218277U (zh) * | 2012-11-19 | 2013-09-25 | 湖南师范大学 | 一种hit太阳电池 |
CN103872176A (zh) * | 2012-12-18 | 2014-06-18 | 国际商业机器公司 | 具有集成光伏电池的器件及其制造方法 |
WO2014175066A1 (ja) * | 2013-04-25 | 2014-10-30 | シャープ株式会社 | 光電変換素子 |
CN103904151A (zh) * | 2014-04-22 | 2014-07-02 | 河北工业大学 | 一种hit太阳能电池及其制备方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106206781A (zh) * | 2016-08-30 | 2016-12-07 | 陕西师范大学 | 一种单晶硅基异质结太阳能电池及其制备方法 |
CN110943136A (zh) * | 2018-09-25 | 2020-03-31 | 君泰创新(北京)科技有限公司 | 一种p型硅薄膜和太阳能电池及制备方法 |
CN111403538A (zh) * | 2018-12-28 | 2020-07-10 | 成都珠峰永明科技有限公司 | 太阳能电池及其制备方法 |
CN111326606A (zh) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N型分片太阳能电池结构及其制作方法 |
CN112151636A (zh) * | 2020-08-21 | 2020-12-29 | 隆基绿能科技股份有限公司 | 硅基异质结太阳电池及其制备方法 |
CN112151636B (zh) * | 2020-08-21 | 2022-07-15 | 隆基绿能科技股份有限公司 | 硅基异质结太阳电池及其制备方法 |
CN114864729A (zh) * | 2020-08-21 | 2022-08-05 | 隆基绿能科技股份有限公司 | 硅基异质结太阳电池及其制备方法 |
CN114864729B (zh) * | 2020-08-21 | 2023-08-01 | 隆基绿能科技股份有限公司 | 硅基异质结太阳电池及其制备方法 |
CN112736151B (zh) * | 2021-01-08 | 2022-11-15 | 上海交通大学 | 基于宽带隙窗口层的背结硅异质结太阳电池 |
CN112736151A (zh) * | 2021-01-08 | 2021-04-30 | 上海交通大学 | 基于宽带隙窗口层的背结硅异质结太阳电池 |
CN114122154A (zh) * | 2021-10-11 | 2022-03-01 | 中国科学院电工研究所 | 一种载流子选择性钝化接触太阳电池及其制备方法 |
CN114122154B (zh) * | 2021-10-11 | 2023-12-19 | 中国科学院电工研究所 | 一种载流子选择性钝化接触太阳电池及其制备方法 |
CN115148861A (zh) * | 2022-09-01 | 2022-10-04 | 福建金石能源有限公司 | 异质结太阳能电池的制作方法 |
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