CN101257052A - 硅基薄膜太阳电池用窗口材料及其制备方法 - Google Patents
硅基薄膜太阳电池用窗口材料及其制备方法 Download PDFInfo
- Publication number
- CN101257052A CN101257052A CNA2008100526204A CN200810052620A CN101257052A CN 101257052 A CN101257052 A CN 101257052A CN A2008100526204 A CNA2008100526204 A CN A2008100526204A CN 200810052620 A CN200810052620 A CN 200810052620A CN 101257052 A CN101257052 A CN 101257052A
- Authority
- CN
- China
- Prior art keywords
- silicon
- thin film
- solar cell
- based thin
- film solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 131
- 239000010703 silicon Substances 0.000 title claims abstract description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000010409 thin film Substances 0.000 title claims abstract description 96
- 239000000463 material Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013081 microcrystal Substances 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 13
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 26
- 238000002360 preparation method Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 17
- 239000005543 nano-size silicon particle Substances 0.000 claims description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 8
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 5
- 239000001569 carbon dioxide Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000003610 charcoal Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000012895 dilution Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910014558 c-SiO Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2008100526204A CN100546050C (zh) | 2008-04-07 | 2008-04-07 | 硅基薄膜太阳电池用窗口材料及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2008100526204A CN100546050C (zh) | 2008-04-07 | 2008-04-07 | 硅基薄膜太阳电池用窗口材料及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101257052A true CN101257052A (zh) | 2008-09-03 |
CN100546050C CN100546050C (zh) | 2009-09-30 |
Family
ID=39891653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2008100526204A Active CN100546050C (zh) | 2008-04-07 | 2008-04-07 | 硅基薄膜太阳电池用窗口材料及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100546050C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332504A (zh) * | 2011-04-13 | 2012-01-25 | 东旭集团有限公司 | 提高非晶硅太阳能电池中p型层和i型层界面性能的方法 |
CN102856437A (zh) * | 2012-09-10 | 2013-01-02 | 福建铂阳精工设备有限公司 | 微晶硅薄膜太阳能电池的制造方法 |
CN102931293A (zh) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | 取代非晶硅薄膜太阳电池的背反射层金属氧化物 |
CN103022255A (zh) * | 2012-12-27 | 2013-04-03 | 沈阳工程学院 | 一种在未引入电极的太阳能电池片上制备ZnO/Al薄膜的方法 |
CN104733557A (zh) * | 2015-01-13 | 2015-06-24 | 福建铂阳精工设备有限公司 | Hit太阳能电池及提高hit电池的短路电流密度的方法 |
CN108417651A (zh) * | 2018-03-07 | 2018-08-17 | 宁波山迪光能技术有限公司 | 薄膜太阳能电池、制作方法及隔热太阳能夹胶玻璃 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254969B (zh) * | 2011-08-17 | 2012-11-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | 基于纳米柱阵列的光电器件及其制作方法 |
-
2008
- 2008-04-07 CN CNB2008100526204A patent/CN100546050C/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102332504A (zh) * | 2011-04-13 | 2012-01-25 | 东旭集团有限公司 | 提高非晶硅太阳能电池中p型层和i型层界面性能的方法 |
CN102332504B (zh) * | 2011-04-13 | 2013-04-10 | 东旭集团有限公司 | 提高非晶硅太阳能电池中p型层和i型层界面性能的方法 |
CN102931293A (zh) * | 2011-08-11 | 2013-02-13 | 吉富新能源科技(上海)有限公司 | 取代非晶硅薄膜太阳电池的背反射层金属氧化物 |
CN102856437A (zh) * | 2012-09-10 | 2013-01-02 | 福建铂阳精工设备有限公司 | 微晶硅薄膜太阳能电池的制造方法 |
CN103022255A (zh) * | 2012-12-27 | 2013-04-03 | 沈阳工程学院 | 一种在未引入电极的太阳能电池片上制备ZnO/Al薄膜的方法 |
CN103022255B (zh) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | 一种在未引入电极的太阳能电池片上制备ZnO/Al薄膜的方法 |
CN104733557A (zh) * | 2015-01-13 | 2015-06-24 | 福建铂阳精工设备有限公司 | Hit太阳能电池及提高hit电池的短路电流密度的方法 |
CN108417651A (zh) * | 2018-03-07 | 2018-08-17 | 宁波山迪光能技术有限公司 | 薄膜太阳能电池、制作方法及隔热太阳能夹胶玻璃 |
CN108417651B (zh) * | 2018-03-07 | 2020-06-09 | 宁波山迪光能技术有限公司 | 薄膜太阳能电池、制作方法及隔热太阳能夹胶玻璃 |
Also Published As
Publication number | Publication date |
---|---|
CN100546050C (zh) | 2009-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100546050C (zh) | 硅基薄膜太阳电池用窗口材料及其制备方法 | |
CN202549860U (zh) | 一种异质结太阳电池 | |
CN101556971B (zh) | 硅基薄膜太阳电池用背反射电极及其制备方法 | |
CN102779864B (zh) | 一种碲化镉薄膜电池及其制备方法 | |
CN101609796B (zh) | 薄膜形成方法和薄膜太阳能电池的制造方法 | |
CN102208477A (zh) | 一种非晶硅/微晶硅叠层太阳电池及其制备方法 | |
CN102983215A (zh) | 具有硅纳米线结构的硅薄膜太阳能电池的制备方法 | |
CN102142469A (zh) | Pi柔性衬底太阳电池用p型微晶硅碳薄膜材料及制备 | |
CN101257056B (zh) | 柔性衬底硅基薄膜太阳电池 | |
CN102255005A (zh) | 薄膜太阳电池及其制造方法 | |
CN102916060B (zh) | 一种硅基薄膜太阳电池及其制备方法 | |
CN101771097A (zh) | 一种带隙可调控的硅基异质结太阳电池 | |
CN102138220A (zh) | 用于为具有降低的光致衰退的光伏器件淀积非晶硅膜以改进稳定性能的方法 | |
CN201699034U (zh) | 一种硅基异质结太阳电池 | |
CN106449815A (zh) | 基于非晶硅薄膜的异质结太阳能电池器件的制备方法 | |
CN101159297B (zh) | SnO2为衬底的微晶硅薄膜太阳电池用透明导电薄膜的制备方法 | |
CN110459639A (zh) | 具有氢退火tco导电膜的异质结电池结构及其制备方法 | |
CN101740648A (zh) | 窗口层为p型微晶硅锗的硅锗薄膜太阳电池及其制备方法 | |
CN210156405U (zh) | 具有氢退火tco导电膜的异质结电池结构 | |
CN102931270B (zh) | 一种弱光型非晶硅太阳能电池及其制造方法 | |
CN101562215A (zh) | 提高单室沉积微晶硅基薄膜太阳电池效率的制备方法 | |
CN102208459A (zh) | 基于ZnO纳米线的高效硅基薄膜太阳能电池及制造方法 | |
CN101635318A (zh) | 太阳能电池 | |
CN201360010Y (zh) | 薄膜光伏器件 | |
CN201440423U (zh) | 薄膜光伏器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20080903 Assignee: Apollo Precision (Fujian) Limited Assignor: Nankai University Contract record no.: 2014990000447 Denomination of invention: Window material for silicon based thin film solar battery and preparing method thereof Granted publication date: 20090930 License type: Exclusive License Record date: 20140624 |
|
LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
ASS | Succession or assignment of patent right |
Owner name: FUJIAN APOLLO PRECISION LIMITED Free format text: FORMER OWNER: NANKAI UNIVERSITY Effective date: 20150423 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 300071 NANKAI, TIANJIN TO: 362001 QUANZHOU, FUJIAN PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150423 Address after: Licheng District, Jiangnan Hi-Tech Park in Quanzhou city in Fujian province 362001 (Sun Park) Patentee after: Apollo Precision (Fujian) Limited Address before: 300071 Tianjin City, Nankai District Wei Jin Road No. 94 Patentee before: Nankai University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210120 Address after: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee after: Beijing Huihong Technology Co., Ltd Address before: 362001 Jiangnan high tech park, South Ring Road, Licheng District, Quanzhou City, Fujian Province Patentee before: APOLLO PRECISION (FUJIAN) Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20210929 Address after: 101400 Yanqi Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Dongjun new energy Co.,Ltd. Address before: 101400 No.31 Yanqi street, Yanqi Economic Development Zone, Huairou District, Beijing (cluster registration) Patentee before: Beijing Huihong Technology Co., Ltd |
|
TR01 | Transfer of patent right |