CN114864729B - 硅基异质结太阳电池及其制备方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 110
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 62
- 238000002161 passivation Methods 0.000 claims abstract description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 23
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- 239000007789 gas Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- 238000001755 magnetron sputter deposition Methods 0.000 description 3
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- 239000004332 silver Substances 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
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Abstract
本申请公开了一种硅基异质结太阳电池及其制备方法，其中，硅基异质结太阳电池，包括依次叠层设置的基底、钝化层、电子传输层及透明导电氧化物层，所述电子传输层为纳米硅氧层，所述纳米硅氧层与透明导电氧化物层之间设置有n型掺杂非晶硅层。上述方案可以改善电子传输层的电学性能。
Description
本申请是申请日为2020年8月21日，申请号为202010852298.4，发明名称为硅基异质结太阳电池及其制备方法的分案申请。
技术领域
本发明一般涉及太阳能光伏发电技术领域，具体涉及一种硅基异质结太阳电池及其制备方法。
背景技术
硅基异质结(Silicon Hetero-Junction；SHJ)太阳电池具有较高的转化效率，最高的转化效率可以超过25％。现有主流SHJ电池技术路线，由于纳米硅氧以其带隙大，吸收系数小，且光折射率可调节等优势，成为太阳能电池广为采用的一种窗口层材料(也即电子传输层材料)。然而，众所周知，纳米硅氧材料随着氧原子(O)的引入，光学性能提高，但其电学性能单调递减，从而导致电池电流(Isc)的提升和填充因子(FF)的下降程度不同，最终使得SHJ电池的效率提升幅度较小。因此，如何在保持纳米硅氧材料优良光学性能的同时改善其电学性能成为进一步获得高效SHJ电池亟待解决的问题。
发明内容
鉴于现有技术中的上述缺陷或不足，期望提供一种硅基异质结太阳电池及其制备方法，用以至少改善电子传输层的电学性能。
第一方面，本发明提供一种硅基异质结太阳电池，包括依次叠层设置的基底、钝化层、电子传输层及透明导电氧化物(Transparent Conductive Oxide；TCO)层，所述电子传输层为纳米硅氧层；
所述纳米硅氧层与透明导电氧化物层之间设置有n型掺杂非晶硅层。
作为可实现方式，所述n型掺杂非晶硅层的厚度为2nm-4nm。
作为可实现方式，所述纳米硅氧层的折射率为1.9-2.3之间，晶化率为35％-50％。
作为可实现方式，所述纳米硅氧层包括层叠设置的纳米硅氧材料层和纳米硅材料层。
作为可实现方式，所述纳米硅氧材料层的厚度为8nm-15nm，所述纳米硅材料层的厚度为2nm-5nm。
作为可实现方式，所述纳米硅氧层与钝化层之间设置有本征纳米硅层。
作为可实现方式，所述本征纳米硅层的厚度为0.1nm-4nm。
作为可实现方式，所述钝化层及所述本征纳米硅层的H的总含量在20％-28％，或所述钝化层及所述本征纳米硅层的微结构因子在 55％-70％。
第二方面，本发明提供一种上述硅基异质结太阳电池的制备方法，包括以下步骤：
依次形成所述基底、所述钝化层、所述电子传输层及透明导电氧化物层，所述电子传输层为纳米硅氧层；
在所述纳米硅氧层与透明导电氧化物层之间形成n型掺杂非晶硅层。
作为可实现方式，在进行所述n型掺杂非晶硅层沉积时，工艺条件为：
向RF-PECVD工艺腔通入第二工作气体，所述第二工作气体包括 PH3和SiH4，所述PH3和所述SiH4的流量比为1:5-2:5，所述RF-PECVD 工艺腔内压强为0.3mbar～0.8mbar，电源功率密度为 20mW/cm2-30mW/cm2。
上述方案，通过在纳米硅氧层与透明导电氧化物层之间设置n型掺杂非晶硅层，可以改善纳米硅氧层与透明导电氧化物层的接触，在低氧化的界面处，透明导电氧化物材料的扩散相对较小，从而可以降低纳米硅氧层与透明导电氧化物层之间的带阶，改善载流子传输，利于填充因子的改善。
除此之外，通过在纳米硅氧层与钝化层之间设置本征纳米硅层，使得钝化层的表面处于非晶硅与纳米硅的晶相转化区，有利于诱导纳米硅氧加速成核，提高纳米硅氧的晶化率，提高了材料的电学性能，进而提高了电子传输层的电学性能。此外，本征纳米硅层还可以阻挡电子传输层中的磷(P)元素扩散，防止因磷元素扩散而影响钝化层的钝化效果，且本征纳米硅层可以使钝化层的微结构因子(R*)增大，在一定程度上提高了钝化层表面的钝化效果。
附图说明
通过阅读参照以下附图所作的对非限制性实施例所作的详细描述，本申请的其它特征、目的和优点将会变得更明显：
图1为本发明实施例提供的硅基异质结太阳电池的结构示意图；
图2为本发明另一实施例提供的硅基异质结太阳电池的结构示意图；
图3为本发明又一实施例提供的硅基异质结太阳电池的结构示意图；
图4为本发明实施例提供的硅基异质结太阳电池的制备方法的流程图；
图5为图4流程图的制备过程示意图；
图6为本发明另一实施例提供的硅基异质结太阳电池的制备方法的流程图；
图7为图6流程图的制备过程示意图；
图8为本发明又一实施例提供的硅基异质结太阳电池的制备方法的流程图；
图9为图8流程图的制备过程示意图。
具体实施方式
下面结合附图和实施例对本申请作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释相关发明，而非对该发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与发明相关的部分。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本申请。
至少如图1所示，本发明实施例提供的硅基异质结太阳电池，包括依次叠层设置的基底1、钝化层2、p型掺杂非晶硅层6、电子传输层4及TCO层5，所述电子传输层4为纳米硅氧层；所述纳米硅氧层与TCO层5之间设置有n型掺杂非晶硅层8。
这里所说的依次叠层设置是指各层按照一定的先后顺序来形成，依次叠层设置的各层之间可以设置其它层，也可以不设置其它层。例如，钝化层2是直接设置在基底1上的，钝化层2与基底1之间可以不设置其他层；而钝化层2与电子传输层2之间设置有其它层，这里设置的是本征纳米硅层3。
基底1例如可以为n型或者p型掺杂的晶硅基底。
钝化层2可以为本征非晶硅层。
电子传输层4可以为n型掺杂的纳米硅氧层。
可以只在电子传输层4与钝化层2之间设置本征纳米硅层3，如图1所示。也可以只在电子传输层4与TCO层5之间设置n型掺杂非晶硅层8，如图2所示。还可以既在电子传输层4与钝化层2之间设置本征纳米硅层3，又在电子传输层4与TCO层5之间设置n型掺杂非晶硅层8，如图3所示；该三种结构形式详见下述制备方法的描述。
上述方案，通过在电子传输层4与TCO层5之间设置n型掺杂非晶硅层8，可以改善电子传输层4与TCO层5的接触，在低氧化的界面处，透明导电氧化物材料的扩散相对较小，从而可以降低电子传输层4与TCO层5之间的带阶，改善载流子传输，利于填充因子的改善。
通过在电子传输层4与钝化层2之间设置本征纳米硅层3，使得钝化层2的表面处于非晶硅与电子传输层4中的纳米硅的晶相转化区，有利于诱导纳米硅氧加速成核，提高纳米硅氧的晶化率，提高了材料的电学性能，进而提高了电子传输层4的电学性能，其中，纳米硅氧材料的激活能下降5％-10％，电导提升20％-30％。此外，本征纳米硅层3还可以阻挡电子传输层4，如n型掺杂的纳米硅氧层中的磷(P) 元素扩散，防止因磷元素扩散而影响钝化层2的钝化效果，且本征纳米硅层3可以使钝化层2的微结构因子(R*)增大，在一定程度上提高了钝化层2表面的钝化效果。
在既设置本征纳米硅层3，又设置n型掺杂非晶硅层8的情况下，电子传输层4中的纳米硅氧材料激活能下降：35％-60％，电导提升： 25％-40％。
作为可实现方式，所述纳米硅氧层的折射率为1.9-2.3之间，晶化率为35％-50％。
作为可实现方式，所述纳米硅氧层包括层叠设置的纳米硅氧材料层和纳米硅材料层。例如可以先在本征纳米硅层3上形成纳米硅材料层，然后在纳米硅材料层上形成纳米硅氧材料层。
作为可实现方式，所述纳米硅氧材料层的厚度为8nm-15nm，所述纳米硅材料层的厚度为2nm-5nm。
作为可实现方式，所述本征纳米硅层3的厚度为0.1nm-4nm。
作为可实现方式，所述钝化层2及所述本征纳米硅层3的H的总含量在20％-28％。在沉积本征纳米硅层3时，采用高氢稀释比的第一工作气体，例如，第一工作气体包括H2和SiH4，H2和SiH4的流量比为90:1-220:1，以达到高氢稀释比。
作为可实现方式，为了提高电学性能，所述钝化层2及所述本征纳米硅层3的微结构因子在55％-70％。
作为可实现方式，所述n型掺杂非晶硅层8的厚度为2nm-4nm。
第二方面，本发明提供一种上述硅基异质结太阳电池的制备方法，包括以下步骤：
依次形成所述基底1、所述钝化层2、所述电子传输层4及TCO 层5，所述电子传输层4为纳米硅氧层；
在所述电子传输层4与TCO层5之间形成n型掺杂非晶硅层8。
这里所说的依次形成指各层按照一定的先后顺序来形成，依次形成的各层之间可以设置其它层，也可以不设置其它层。例如，钝化层 2是直接形成在基底1上的，钝化层2与基底1之间可以不设置其他层；而钝化层2与电子传输层4之间形成有其它层，这里设置的是本征纳米硅层3。
可以仅在形成钝化层2后，在钝化层2上沉积本征纳米硅层3。也可以仅在形成纳米硅氧层后，在纳米硅氧层上沉积n型掺杂非晶硅层8。还可以既在形成钝化层2后，在钝化层2上沉积本征纳米硅层3，还在形成纳米硅氧层后，在纳米硅氧层上沉积n型掺杂非晶硅层8。
该制备方法用于上述实施例中的硅基异质结太阳电池，其效果及原理参见上述实施例，这里不再赘述。
作为可实现方式，在进行所述本征纳米硅层3沉积时，工艺条件为：
向VHF-PECVD工艺腔通入第一工作气体，所述第一工作气体包括H2和SiH4，所述H2和所述SiH4的流量比为90:1-220:1，所述 VHF-PECVD工艺腔内压强为3mbar～5mbar，电源功率密度为 55mW/cm2-85mW/cm2。
作为可实现方式，在进行所述n型掺杂非晶硅层8沉积时，工艺条件为：
向RF-PECVD工艺腔通入第二工作气体，所述第二工作气体包括 PH3和SiH4，所述PH3和所述SiH4的流量比为1:5-2:5，所述RF-PECVD 工艺腔内压强为0.3mbar～0.8mbar，电源功率密度为 20mW/cm2-30mW/cm2。
作为可实现方式，所述纳米硅氧层的折射率为1.9-2.3之间，晶化率为35％-50％。
作为可实现方式，所述纳米硅氧层包括层叠设置的纳米硅氧材料层和纳米硅材料层。
作为可实现方式，所述纳米硅氧材料层的厚度为8nm-15nm，所述纳米硅材料层的厚度为2nm-5nm。
作为可实现方式，所述n型掺杂非晶硅层8的厚度为2nm-4nm。
以下以几种具体实现方式，对该发明提供的硅基异质结太阳电池的制备方法，予以示例性说明，其并非是对本发明的唯一性限定。
第一种实现方式，如图4、图5所示：
S101：对基底1进行表面结构化。
提供一基底1，该基底1可以是n型或者p型掺杂的晶硅基底，在该实现方式中以n型掺杂的晶硅基底为例。使用含有KOH的溶液对基底1表面进行制绒，以完成表面织构化。其中，KOH溶液的浓度可以为5％wt，温度80℃。并在此过程使用含有氢氟酸的溶液进行清洗，并在清洗后进行水洗及烘干等工序。
S102：沉积钝化层2。
将经过表面结构化的基底1放置于射频等离子体增强化学气相沉积系统(RadioFrequency Plasma Enhanced Chemical Vapor Deposition； RF-PECVD)内，分别在基底1的正面和背面沉积钝化层2，钝化层2 可以为本征非晶硅层。例如但不限于，RF-PECVD采用的射频频率为 13.56MHz。沉积的本征非晶硅层的厚度在5nm-10nm。
S103：沉积本征纳米硅层3。
将上述步骤沉积过钝化层2的部件，放入到甚高频等离子体增强化学气相沉积设备(Very High Frequency Plasma Enhanced Chemical Vapor Deposition；VHF-PECVD)内，并向VHF-PECVD工艺腔通入第一工作气体，所述第一工作气体包括H2和SiH4，所述H2和所述SiH4的流量比为90:1-120:1，所述VHF-PECVD工艺腔内压强为3mbar～5 mbar，电源功率密度为55mW/cm2-85mW/cm2。沉积厚度为0.1nm-4nm 的本征纳米硅层3。
S104：沉积电子传输层4。
该电子传输层4采用n型纳米硅氧层。
将沉积过本征纳米硅层3的部件，放入到13.56MHz的RF-PECVD 设备中，在本征纳米硅层3上沉积10nm-20nm厚的n型纳米硅氧层。
S105：沉积背面p型掺杂非晶硅层6。
在沉积过n型纳米硅氧层的部件的背面，通过13.56MHz的 RF-PECVD设备在基底1背面的钝化层2上沉积5nm-15nm厚的p型掺杂非晶硅层6。
S106：沉积透明导电氧化物层5。
通过物理气相沉积(Physical Vapour Deposition；PVD)，如磁控溅射工艺，分别在n型纳米硅氧层及p型掺杂非晶硅层6上沉积透明导电氧化物层5。
S107：制备电极7。
通过丝网印刷等放置，在正面及背面的透明导电氧化物层5上印制导电浆料，并烧结形成对应的电极7。导电浆料例如但不限于为银浆。
第二种实现方式，如图6、图7所示：
S201：对基底1进行表面结构化。
提供一基底1，该基底1可以是n型或者p型掺杂的晶硅基底，在该实现方式中以n型掺杂的晶硅基底为例。使用含有KOH的溶液对基底1表面进行制绒，以完成表面织构化。其中，KOH溶液的浓度可以为5％wt，温度80℃。并在此过程使用含有氢氟酸的溶液进行清洗，并在清洗后进行水洗及烘干等工序。
S202：沉积钝化层2。
将经过表面结构化的基底1放置于射频等离子体增强化学气相沉积系统(RadioFrequency Plasma Enhanced Chemical Vapor Deposition； RF-PECVD)内，分别在基底1的正面和背面沉积钝化层2，钝化层2 可以为本征非晶硅层。例如但不限于，RF-PECVD采用的射频频率为 13.56MHz。沉积的本征非晶硅层的厚度在5nm-10nm。
S203：沉积电子传输层4。
该电子传输层4采用n型纳米硅氧层。
将沉积过钝化层2的部件，放入到13.56MHz的RF-PECVD设备中，在钝化层2上沉积10nm-20nm厚的n型纳米硅氧层4。
S204：沉积n型掺杂非晶硅层8。
将沉积过电子传输层2的部件放入到RF-PECVD设备，例如但不限于，RF-PECVD采用的射频频率为13.56MHz。向RF-PECVD工艺腔通入第二工作气体，所述第二工作气体包括PH3和SiH4，所述PH3和所述SiH4的流量比为1:5-2:5，所述RF-PECVD工艺腔内压强为 0.3mbar～0.8mbar，电源功率密度为20mW/cm2-30mW/cm2。沉积 2nm-4nm厚的n型掺杂非晶硅层8。
S205：沉积背面p型掺杂非晶硅层6。
在沉积过n型纳米硅氧层的部件的背面，通过13.56MHz的 RF-PECVD设备在基底1背面的钝化层2上沉积5nm-15nm厚的p型掺杂非晶硅层6。
S206：沉积TCO层5。
通过物理气相沉积(Physical Vapour Deposition；PVD)，如磁控溅射工艺，分别在电子传输层4(也即n型纳米硅氧层)及p型掺杂非晶硅层6上沉积TCO层5。
S207：制备电极7。
通过丝网印刷等放置，在正面及背面的透明导电氧化物层5上印制导电浆料，并烧结形成对应的电极7。导电浆料例如但不限于为银浆。
第三种实现方式，如图8、图9所示：
S301：对基底1进行表面结构化。
提供一基底1，该基底1可以是n型或者p型掺杂的晶硅基底，在该实现方式中以n型掺杂的晶硅基底为例。使用含有KOH的溶液对基底1表面进行制绒，以完成表面织构化。其中，KOH溶液的浓度可以为5％wt，温度80℃。并在此过程使用含有氢氟酸的溶液进行清洗，并在清洗后进行水洗及烘干等工序。
S302：沉积钝化层2。
将经过表面结构化的基底1放置于射频等离子体增强化学气相沉积系统(RadioFrequency Plasma Enhanced Chemical Vapor Deposition； RF-PECVD)内，分别在基底1的正面和背面沉积钝化层2，钝化层2 可以为本征非晶硅层。例如但不限于，RF-PECVD采用的射频频率为 13.56MHz。沉积的本征非晶硅层的厚度在5nm-10nm。
S303：沉积本征纳米硅层3。
将上述步骤沉积过钝化层2的部件，放入到甚高频等离子体增强化学气相沉积设备(Very High Frequency Plasma Enhanced Chemical Vapor Deposition；VHF-PECVD)内，并向VHF-PECVD工艺腔通入第一工作气体，所述第一工作气体包括H2和SiH4，所述H2和所述SiH4的流量比为90:1-120:1，所述VHF-PECVD工艺腔内压强为3mbar～5 mbar，电源功率密度为55mW/cm2-85mW/cm2。沉积厚度为0.1nm-4nm 的本征纳米硅层3。
S304：沉积电子传输层4。
该电子传输层4采用n型纳米硅氧层。
将沉积过本征纳米硅层3的部件，放入到13.56MHz的RF-PECVD 设备中，在本征纳米硅层3上沉积10nm-20nm厚的n型纳米硅氧层。
S305：沉积n型掺杂非晶硅层8。
将沉积过电子传输层2的部件放入到RF-PECVD设备，例如但不限于，RF-PECVD采用的射频频率为13.56MHz。向RF-PECVD工艺腔通入第二工作气体，所述第二工作气体包括PH3和SiH4，所述PH3和所述SiH4的流量比为1:5-2:5，所述RF-PECVD工艺腔内压强为 0.3mbar～0.8mbar，电源功率密度为20mW/cm2-30mW/cm2。沉积 2nm-4nm厚的n型掺杂非晶硅层8。
S306：沉积背面p型掺杂非晶硅层6。
在沉积过n型纳米硅氧层的部件的背面，通过13.56MHz的 RF-PECVD设备在基底1背面的钝化层2上沉积5nm-15nm厚的p型掺杂非晶硅层6。
S307：沉积TCO层5。
通过物理气相沉积(Physical Vapour Deposition；PVD)，如磁控溅射工艺，分别在n型纳米硅氧层及p型掺杂非晶硅层6上沉积TCO层 5。
S308：制备电极7。
通过丝网印刷等放置，在正面及背面的透明导电氧化物层5上印制导电浆料，并烧结形成对应的电极7。导电浆料例如但不限于为银浆。
需要理解的是，上文如有涉及术语“中心”、“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
以上描述仅为本申请的较佳实施例以及对所运用技术原理的说明。本领域技术人员应当理解，本申请中所涉及的发明范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离发明构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本申请中公开的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。
Claims (10)
1.一种硅基异质结太阳电池，包括依次叠层设置的基底、钝化层、电子传输层及透明导电氧化物层，所述电子传输层为纳米硅氧层，其特征在于；
所述纳米硅氧层与透明导电氧化物层之间设置有n型掺杂非晶硅层。
2.根据权利要求1所述的硅基异质结太阳电池，其特征在于，所述n型掺杂非晶硅层的厚度为2 nm-4 nm。
3.根据权利要求1所述的硅基异质结太阳电池，其特征在于，所述纳米硅氧层的折射率为1.9-2.3之间，晶化率为35%-50%。
4.根据权利要求1所述的硅基异质结太阳电池，其特征在于，所述纳米硅氧层包括层叠设置的纳米硅氧材料层和纳米硅材料层。
5.根据权利要求4所述的硅基异质结太阳电池，其特征在于，所述纳米硅氧材料层的厚度为8 nm-15 nm，所述纳米硅材料层的厚度为2 nm-5 nm。
6.根据权利要求1-5任一项所述的硅基异质结太阳电池，其特征在于，所述纳米硅氧层与钝化层之间设置有本征纳米硅层。
7.根据权利要求6所述的硅基异质结太阳电池，其特征在于，所述本征纳米硅层的厚度为0.1 nm-4 nm。
8.根据权利要求6所述的硅基异质结太阳电池，其特征在于，所述钝化层及所述本征纳米硅层的H的总含量在20%-28%，或所述钝化层及所述本征纳米硅层的微结构因子在55%-70%。
9.一种如权利要求1-8任一项所述硅基异质结太阳电池的制备方法，其特征在于，包括以下步骤：
依次形成所述基底、所述钝化层、所述电子传输层及透明导电氧化物层，所述电子传输层为纳米硅氧层；
在所述纳米硅氧层与透明导电氧化物层之间形成n型掺杂非晶硅层。
10.根据权利要求9所述的制备方法，其特征在于，在进行所述n型掺杂非晶硅层沉积时，工艺条件为：
向RF-PECVD工艺腔通入第二工作气体，所述第二工作气体包括PH3和SiH4，所述PH3和所述SiH4的流量比为1:5-2:5，所述RF-PECVD工艺腔内压强为0.3 mbar～0.8 mbar，电源功率密度为20 mW/cm2-30 mW/cm2。
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