CN202076297U - 基于p型硅片的背接触式hit太阳能电池结构 - Google Patents
基于p型硅片的背接触式hit太阳能电池结构 Download PDFInfo
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Abstract
本实用新型涉及一种太阳能电池结构,具体涉及一种基于P型硅片的背接触式HIT太阳能电池结构。本实用新型将常规晶硅电池和薄膜太阳能电池结合,该结构使得太阳光在电池内传播光程更长,电池较常规晶硅太阳电池厚度大大减薄;电极全部印刷在电池背面,既避免了常规太阳能电池正面电极遮光的问题,又降低了对电极印刷精度和高宽比的要求,可提高晶体硅太阳能电池的效率,适用于产业化生产。
Description
技术领域
本实用新型涉及一种太阳能电池结构,具体涉及一种基于P型硅片的背接触式HIT太阳能电池结构。
背景技术
太阳能产业的迅速发展需求一种工艺流程简单,光电转化效率高的产业化技术来降低发电成本,达到与市电同价或低于市电电价的目标。
当前常规晶硅电池随着产业化的发展,转换效率提升和成本降低都有了较大的进步。但常规晶硅电池的本身技术特点限制了其发电成本的进一步降低,难以达到市电同价的目标。业界出现了多种解决方案,包括选择性发射极太阳能电池、背接触式太阳能电池、HIT电池等。同时新的技术,如激光技术、LIP技术、光刻技术等的出现也为太阳能电池进一步的转换效率提升和成本降低提供了可能。
目前在各种高效太阳电池中,背接触电池和HIT电池是极为有效地解决方案。背接触电池提高太阳能电池的光利用率,使得效率有了巨大提升。但是其多采用了激光技术,成本较高且产能较小。HIT电池减少了电池厚度且效率较常规晶硅电池有了提高,但其仍在电池正面印刷银电极,遮光率的问题没有解决。
发明内容
本实用新型的目的就是针对上述存在的缺陷而提供一种基于P型硅片的背接触式HIT太阳能电池结构,该结构使得太阳光在电池内传播光程更长,电池较常规晶硅太阳电池厚度大大减薄;电极全部印刷在电池背面,即避免了常规太阳能电池正面电极遮光的问题,又降低了对电极印刷精度和高宽比的要求,可提高晶体硅太阳能电池的效率,适用于产业化生产。
本实用新型采用的技术方案为一种基于P型硅片的背接触式HIT太阳能电池结构,包括P型硅片,制绒后的P型硅片正表面有一层高浓度P+型非晶硅薄膜和一层氮化硅减反射膜;P型硅片背表面分为P型区域和N型区域,其中P型区域为P型硅片基体;N型区域基底为P型硅片,P型硅片上依次为一层本征非晶硅薄层和一层N型非晶硅薄层,在P型基体和N型区域表面覆盖一层SiO2薄层;在背表面的N型区域和P型区域分别印刷导电浆料作为N区电极和P区电极。
P型硅片正表面的一层高浓度P+型非晶硅薄膜,膜厚度范围为1~50000nm。
P型硅片正表面的一层氮化硅减反射膜厚度为75~85nm,折射率为2.0~2.2。
P型硅片背表面N型区域的一层本征非晶硅薄层,膜厚度范围为1~50000nm;一层N型非晶硅薄层,膜厚度范围为1~50000nm。
在P型硅片背表面P型区域和N型区域上的一层SiO2薄层,厚度在1~50000nm。
在背表面的N型区域和P型区域分别丝网印刷导电浆料作为电极,N型区域上采用的电极印刷材料为银浆;P型区域上采用的电极印刷材料为银浆、银铝浆,或者是类似常规太阳能电池背面银铝相接的结构的一种。
本实用新型的有益效果是:一种基于P型硅片的背接触式HIT太阳能电池结构,在制绒后的P型硅片正表面沉积一层高浓度P+型非晶硅薄膜;在背表面依次沉积一层本征非晶硅薄层和一层N型非晶硅薄层;在硅片背表面采用丝网印刷烧结方式沉积SiO2作为掩膜,采用丝网印刷的方式把SiO2浆料印刷在硅片背面,烧结形成掩膜的方法使掩膜形状更精准和易控;在硅片正表面生长氮化硅减反射层;使用强碱溶液腐蚀背表面掩膜未遮档区域直至露出P型硅基体;使用HF酸腐蚀掉SiO2掩膜以露出N型非晶硅;在硅片背面沉积一层SiO2薄层作为背面钝化层和反射面;在背表面的N型区域和P型区域分别丝网印刷导电浆料经烧结作为N区电极和P区电极。该结构使得太阳光在电池内传播光程更长,电池较常规晶硅太阳电池厚度大大减薄;电极全部印刷在电池背面,即避免了常规太阳能电池正面电极遮光的问题,又降低了对电极印刷精度和高宽比的要求;在组件生产中使用本电池可减少焊接工序,节约焊带,降低组件生产成本。本实用新型将常规晶硅电池和薄膜太阳能电池结合,方法简单,能够迅速产业化。
附图说明:
图1所示为本实用新型电池结构图;
图2所示为本实用新型实施例1和2中电池背面的掩膜区域的示意图;
图3所示为本实用新型实施例1和2中背面电极结构示意图。
图中,1. P型硅片,2. P+非晶硅薄膜,3. 本征非晶硅薄层,4. N型非晶硅薄层,5. 氮化硅减反射膜,6. SiO2薄层,7. P区电极,8. N区电极,9. SiO2掩膜。
具体实施方式:
为了更好地理解本实用新型,下面结合附图和实例来说明本实用新型的技术方案,但是本实用新型并不局限于此。
本实用新型采用的技术方案为一种基于P型硅片的背接触式HIT太阳能电池结构,包括P型硅片1,在制绒后的P型硅片1正表面有一层高浓度P+型非晶硅薄膜2和氮化硅减反射膜5;P型硅片1背表面分为P型区域和N型区域,其中P型区域为P型硅片基体1;N型区域基底为P型硅片1,P型硅片1上依次为一层本征非晶硅薄层3和一层N型非晶硅薄层4,在硅片背面P型基体1和N型区域表面覆盖一层SiO2薄层6作为背面钝化层和反射面;在背表面的N型区域和P型区域分别印刷导电浆料作为N区电极8和P区电极7。
实施例1:
选择P型单晶硅片;P型硅片1经过常规的清洗工艺,进行表面碱制绒,以便去除硅片表面的机械损伤层,清除表面油污和金属杂质,形成金字塔形貌的绒面,增加对太阳光的吸收,增加PN结面积,提高短路电流。采用非晶硅镀膜设备在P型硅片1的正表面沉积一层高掺杂的P+型非晶硅薄层2, 薄膜膜厚为50nm,然后在P型硅片1背表面依次沉积一层本征非晶硅薄层3,膜厚度为1nm,和一层N型非晶硅薄层4,膜厚度为150nm。在丝网印刷机台上,按照说明书附图图2中所示掩膜图样,在P型硅片1背表面印刷上SiO2浆料,烧结后成为SiO2掩膜9。在400℃下,采用PECVD工艺即等离子体增强化学气相沉积法在P型硅片1正表面沉积70~80nm厚的氮化硅减反射层5,反应气体为硅烷和氨气。然后将硅片置于浓度为20%的NaOH溶液中,85℃下将SiO2掩膜9未覆盖的非晶硅去除,露出下表面的P型硅基体。然后在浓度为15%的HF酸溶液中将SiO2掩膜9去除。采用APCVD或PECVD机台在硅片下表面沉积一层很薄的SiO2薄层6,薄膜厚度为30nm,作为背面钝化层和反射面。最后按照说明书附图图3所示图案在背表面的N型区域和P型区域分别印刷导电浆料作为作为N区电极8和P区电极7,N型区域上采用的电极印刷材料为银浆;P型区域上采用的电极印刷材料为银浆、银铝浆,或者是类似常规太阳能电池背面银铝相接的结构的一种,烧结后形成本实用新型的基于P型硅片的背接触式HIT太阳能电池。
实施例2:
选择P型多晶硅片;P型硅片1经过常规的清洗工艺,进行表面碱制绒,以便去除硅片表面的机械损伤层,清除表面油污和金属杂质,形成金字塔形貌的绒面,增加对太阳光的吸收,增加PN结面积,提高短路电流。采用非晶硅镀膜设备在P型硅片1的正表面沉积一层高掺杂的P+型非晶硅薄层2, 薄膜膜厚为50nm,然后在P型硅片1背表面依次沉积一层本征非晶硅薄层3,膜厚度为1nm,和一层N型非晶硅薄层4,膜厚度为150nm。在丝网印刷机台上,按照说明书附图图2中所示掩膜图样,在P型硅片1背表面印刷上SiO2浆料,烧结后成为SiO2掩膜9。在400℃下,采用PECVD工艺即等离子体增强化学气相沉积法在P型硅片1正表面沉积70~80nm厚的氮化硅减反射层5,反应气体为硅烷和氨气。然后将硅片置于浓度为20%的NaOH溶液中,85℃下将SiO2掩膜9未覆盖的非晶硅去除,露出下表面的P型硅基体。然后在浓度为15%的HF酸溶液中将SiO2掩膜9去除。采用APCVD或PECVD机台在硅片下表面沉积一层很薄的SiO2薄层6,薄膜厚度为30nm,作为背面钝化层和反射面。最后按照说明书附图图3所示图案在背表面的N型区域和P型区域分别印刷导电浆料作为作为N区电极8和P区电极7,N型区域上采用的电极印刷材料为银浆;P型区域上采用的电极印刷材料为银浆、银铝浆,或者是类似常规太阳能电池背面银铝相接的结构的一种,烧结后形成本实用新型的基于P型硅片的背接触式HIT太阳能电池。
Claims (6)
1.一种基于P型硅片的背接触式HIT太阳能电池结构,包括P型硅片,其特征在于,在制绒后的P型硅片正表面有一层高浓度P+型非晶硅薄膜和一层氮化硅减反射膜;P型硅片背表面分为P型区域和N型区域,其中P型区域为P型硅片基体;N型区域基底为P型硅片,P型硅片上依次为一层本征非晶硅薄层和一层N型非晶硅薄层,在P型基体和N型区域表面覆盖一层SiO2薄层;在背表面的N型区域和P型区域分别印刷导电浆料作为N区电极和P区电极。
2.根据权利要求1所述的一种基于P型硅片的背接触式HIT太阳能电池结构,其特征在于:P型硅片正表面的一层高浓度P+型非晶硅薄膜,膜厚度范围为1~50000nm。
3.根据权利要求1所述的一种基于P型硅片的背接触式HIT太阳能电池结构,其特征在于:P型硅片正表面的一层氮化硅减反射膜厚度为75~85nm,折射率为2.0~2.2。
4.根据权利要求1所述的一种基于P型硅片的背接触式HIT太阳能电池结构,其特征在于:P型硅片背表面N型区域的一层本征非晶硅薄层,膜厚度范围为1~50000nm;一层N型非晶硅薄层,膜厚度范围为1~50000nm。
5.根据权利要求1所述的一种基于P型硅片的背接触式HIT太阳能电池结构,其特征在于:在P型硅片背表面P型区域和N型区域上的一层SiO2薄层,厚度在1~50000nm。
6.根据权利要求1所述的一种基于P型硅片的背接触式HIT太阳能电池结构,其特征在于:在背表面的N型区域和P型区域分别丝网印刷导电浆料作为电极,N型区域上采用的电极印刷材料为银浆;P型区域上采用的电极印刷材料为银浆、银铝浆,或者是类似常规太阳能电池背面银铝相接的结构的一种。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103094395A (zh) * | 2012-08-17 | 2013-05-08 | 常州天合光能有限公司 | 一种降低p型衬底hit太阳能电池串阻的方法 |
CN103943693A (zh) * | 2014-04-30 | 2014-07-23 | 山东力诺太阳能电力股份有限公司 | 一种p型硅衬底背面接触式太阳电池结构和制备方法 |
CN108666386A (zh) * | 2018-07-11 | 2018-10-16 | 泰州隆基乐叶光伏科技有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN114256381A (zh) * | 2021-11-08 | 2022-03-29 | 泰州隆基乐叶光伏科技有限公司 | N型TopCon电池片及其制备方法 |
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2011
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103094395A (zh) * | 2012-08-17 | 2013-05-08 | 常州天合光能有限公司 | 一种降低p型衬底hit太阳能电池串阻的方法 |
CN103943693A (zh) * | 2014-04-30 | 2014-07-23 | 山东力诺太阳能电力股份有限公司 | 一种p型硅衬底背面接触式太阳电池结构和制备方法 |
CN108666386A (zh) * | 2018-07-11 | 2018-10-16 | 泰州隆基乐叶光伏科技有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN108666386B (zh) * | 2018-07-11 | 2024-02-02 | 泰州隆基乐叶光伏科技有限公司 | 一种p型背接触太阳电池及其制备方法 |
CN114256381A (zh) * | 2021-11-08 | 2022-03-29 | 泰州隆基乐叶光伏科技有限公司 | N型TopCon电池片及其制备方法 |
CN114256381B (zh) * | 2021-11-08 | 2024-01-16 | 西安隆基乐叶光伏科技有限公司 | N型TopCon电池片及其制备方法 |
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