CN203242640U - 一种具有透明电极的晶硅太阳能电池 - Google Patents
一种具有透明电极的晶硅太阳能电池 Download PDFInfo
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- CN203242640U CN203242640U CN2013200843963U CN201320084396U CN203242640U CN 203242640 U CN203242640 U CN 203242640U CN 2013200843963 U CN2013200843963 U CN 2013200843963U CN 201320084396 U CN201320084396 U CN 201320084396U CN 203242640 U CN203242640 U CN 203242640U
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- silicon solar
- crystal silicon
- transparency electrode
- solar batteries
- transparent electrode
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910021389 graphene Inorganic materials 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 210000004027 cell Anatomy 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2013200843963U CN203242640U (zh) | 2013-02-25 | 2013-02-25 | 一种具有透明电极的晶硅太阳能电池 |
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CN2013200843963U CN203242640U (zh) | 2013-02-25 | 2013-02-25 | 一种具有透明电极的晶硅太阳能电池 |
Publications (1)
Publication Number | Publication Date |
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CN203242640U true CN203242640U (zh) | 2013-10-16 |
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CN2013200843963U Expired - Lifetime CN203242640U (zh) | 2013-02-25 | 2013-02-25 | 一种具有透明电极的晶硅太阳能电池 |
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CN (1) | CN203242640U (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117311A (zh) * | 2013-02-25 | 2013-05-22 | 中国东方电气集团有限公司 | 一种具有透明电极的晶硅太阳能电池 |
CN104134709A (zh) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | 多晶硅电池的石墨烯电极的印刷工艺 |
CN104134706A (zh) * | 2014-07-17 | 2014-11-05 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN108493280A (zh) * | 2018-02-01 | 2018-09-04 | 苏州太阳井新能源有限公司 | 一种高表面导电能力的太阳能电池及其制作方法 |
-
2013
- 2013-02-25 CN CN2013200843963U patent/CN203242640U/zh not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117311A (zh) * | 2013-02-25 | 2013-05-22 | 中国东方电气集团有限公司 | 一种具有透明电极的晶硅太阳能电池 |
CN103117311B (zh) * | 2013-02-25 | 2016-04-06 | 中国东方电气集团有限公司 | 一种具有透明电极的晶硅太阳能电池 |
CN104134706A (zh) * | 2014-07-17 | 2014-11-05 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN104134706B (zh) * | 2014-07-17 | 2016-08-24 | 山东力诺太阳能电力股份有限公司 | 一种石墨烯硅太阳电池及其制作方法 |
CN104134709A (zh) * | 2014-08-14 | 2014-11-05 | 无锡尚品太阳能电力科技有限公司 | 多晶硅电池的石墨烯电极的印刷工艺 |
CN108493280A (zh) * | 2018-02-01 | 2018-09-04 | 苏州太阳井新能源有限公司 | 一种高表面导电能力的太阳能电池及其制作方法 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: DONGFANG ELECTRIC INTERNATIONAL CORPORATION Free format text: FORMER OWNER: CHINA DONGFANG ELECTRIC GROUP CORPORATION Effective date: 20150724 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150724 Address after: 610036 Sichuan Province, Chengdu City District Shu cattle Road No. 333 6 floor Patentee after: Dongfang Electric Corporation Address before: Jinniu District Chengdu City, Sichuan province 610036 Shu Road No. 333 Patentee before: Dongfang Electric Corporation |
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AV01 | Patent right actively abandoned |
Granted publication date: 20131016 Effective date of abandoning: 20160406 |
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C25 | Abandonment of patent right or utility model to avoid double patenting |