FR2906406B1 - Procede de realisation de cellule photovoltaique a heterojonction en face arriere. - Google Patents

Procede de realisation de cellule photovoltaique a heterojonction en face arriere.

Info

Publication number
FR2906406B1
FR2906406B1 FR0653943A FR0653943A FR2906406B1 FR 2906406 B1 FR2906406 B1 FR 2906406B1 FR 0653943 A FR0653943 A FR 0653943A FR 0653943 A FR0653943 A FR 0653943A FR 2906406 B1 FR2906406 B1 FR 2906406B1
Authority
FR
France
Prior art keywords
producing
photovoltaic cell
side heterojunction
heterojunction
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0653943A
Other languages
English (en)
Other versions
FR2906406A1 (fr
Inventor
Yannick Veschetti
Bruno Remiat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0653943A priority Critical patent/FR2906406B1/fr
Priority to EP07803574A priority patent/EP2067174A2/fr
Priority to US12/442,853 priority patent/US7972894B2/en
Priority to PCT/EP2007/060016 priority patent/WO2008037658A2/fr
Priority to JP2009528733A priority patent/JP2010504636A/ja
Publication of FR2906406A1 publication Critical patent/FR2906406A1/fr
Application granted granted Critical
Publication of FR2906406B1 publication Critical patent/FR2906406B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
FR0653943A 2006-09-26 2006-09-26 Procede de realisation de cellule photovoltaique a heterojonction en face arriere. Active FR2906406B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0653943A FR2906406B1 (fr) 2006-09-26 2006-09-26 Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
EP07803574A EP2067174A2 (fr) 2006-09-26 2007-09-21 Procede de realisation de cellule photovoltaique a heterojonction en face arriere
US12/442,853 US7972894B2 (en) 2006-09-26 2007-09-21 Method of producing a photovoltaic cell with a heterojunction on the rear face
PCT/EP2007/060016 WO2008037658A2 (fr) 2006-09-26 2007-09-21 Procede de realisation de cellule photovoltaique a heterojonction en face arriere
JP2009528733A JP2010504636A (ja) 2006-09-26 2007-09-21 背面ヘテロ接合太陽電池製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0653943A FR2906406B1 (fr) 2006-09-26 2006-09-26 Procede de realisation de cellule photovoltaique a heterojonction en face arriere.

Publications (2)

Publication Number Publication Date
FR2906406A1 FR2906406A1 (fr) 2008-03-28
FR2906406B1 true FR2906406B1 (fr) 2008-12-19

Family

ID=37963592

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0653943A Active FR2906406B1 (fr) 2006-09-26 2006-09-26 Procede de realisation de cellule photovoltaique a heterojonction en face arriere.

Country Status (5)

Country Link
US (1) US7972894B2 (fr)
EP (1) EP2067174A2 (fr)
JP (1) JP2010504636A (fr)
FR (1) FR2906406B1 (fr)
WO (1) WO2008037658A2 (fr)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
KR101539047B1 (ko) * 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
KR101142861B1 (ko) * 2009-02-04 2012-05-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
US7927910B2 (en) * 2009-06-28 2011-04-19 Sino-American Silicon Products Inc. Manufacturing method of solar cell
KR101146736B1 (ko) * 2009-09-14 2012-05-17 엘지전자 주식회사 태양 전지
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
KR20110071375A (ko) * 2009-12-21 2011-06-29 현대중공업 주식회사 후면전계형 이종접합 태양전지 및 그 제조방법
US8524524B2 (en) * 2010-04-22 2013-09-03 General Electric Company Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US20120012170A1 (en) * 2010-07-19 2012-01-19 Institutt For Energiteknikk Processed silicon wafer, silicon chip, and method and apparatus for production thereof
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
WO2012132616A1 (fr) * 2011-03-25 2012-10-04 三洋電機株式会社 Procédé de fabrication d'un élément de conversion photoélectrique
JP5842173B2 (ja) 2011-03-28 2016-01-13 パナソニックIpマネジメント株式会社 光電変換装置及び光電変換装置の製造方法
JPWO2012132766A1 (ja) * 2011-03-28 2014-07-28 三洋電機株式会社 光電変換装置及び光電変換装置の製造方法
GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
CN102214719B (zh) * 2011-06-10 2013-05-01 山东力诺太阳能电力股份有限公司 基于n型硅片的背接触异质结太阳电池
WO2013038768A1 (fr) * 2011-09-12 2013-03-21 三洋電機株式会社 Cellule solaire et son procédé de fabrication
KR20130050721A (ko) 2011-11-08 2013-05-16 삼성에스디아이 주식회사 태양 전지
US20130146136A1 (en) * 2011-12-13 2013-06-13 Kyoung-Jin Seo Photovoltaic device and method of manufacturing the same
JP2013125890A (ja) * 2011-12-15 2013-06-24 Sharp Corp 光電変換素子およびその製造方法
US20130157409A1 (en) * 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
KR101948206B1 (ko) * 2012-03-02 2019-02-14 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 태양 전지와, 이의 제조 방법
JP6032911B2 (ja) * 2012-03-23 2016-11-30 シャープ株式会社 光電変換素子およびその製造方法
JP5774204B2 (ja) * 2012-03-29 2015-09-09 三菱電機株式会社 光起電力素子およびその製造方法、太陽電池モジュール
CN104137269B (zh) * 2012-05-14 2016-12-28 三菱电机株式会社 光电变换装置及其制造方法、光电变换模块
JP6103867B2 (ja) * 2012-09-12 2017-03-29 シャープ株式会社 光電変換素子および光電変換素子の製造方法
JP2014072209A (ja) * 2012-09-27 2014-04-21 Sharp Corp 光電変換素子および光電変換素子の製造方法
CN104781936A (zh) 2012-10-04 2015-07-15 喜瑞能源公司 具有电镀的金属格栅的光伏器件
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
JP2014158017A (ja) * 2013-01-16 2014-08-28 Sharp Corp 光電変換素子および光電変換素子の製造方法
JP2014183073A (ja) * 2013-03-18 2014-09-29 Sharp Corp 光電変換素子および光電変換素子の製造方法
JP6223424B2 (ja) * 2013-03-28 2017-11-01 シャープ株式会社 光電変換素子
JP6342386B2 (ja) * 2013-04-01 2018-06-13 シャープ株式会社 光電変換装置
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
KR102045001B1 (ko) * 2013-06-05 2019-12-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
WO2015122257A1 (fr) * 2014-02-13 2015-08-20 シャープ株式会社 Élément de conversion photoélectrique
US20150270421A1 (en) * 2014-03-20 2015-09-24 Varian Semiconductor Equipment Associates, Inc. Advanced Back Contact Solar Cells
WO2015189878A1 (fr) * 2014-06-13 2015-12-17 国立大学法人福島大学 Cellule solaire et son procédé de fabrication
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US20160020342A1 (en) * 2014-07-17 2016-01-21 Solarcity Corporation Solar cell with interdigitated back contact
WO2016072415A1 (fr) * 2014-11-07 2016-05-12 シャープ株式会社 Élément de conversion photoélectrique
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US9947822B2 (en) 2015-02-02 2018-04-17 Tesla, Inc. Bifacial photovoltaic module using heterojunction solar cells
WO2016147565A1 (fr) * 2015-03-16 2016-09-22 パナソニックIpマネジメント株式会社 Cellule de batterie solaire
KR101689471B1 (ko) * 2015-06-15 2016-12-26 한양대학교 산학협력단 금속 칼코겐 화합물 박막 및 그 제조 방법
DE102015112046A1 (de) * 2015-07-23 2017-01-26 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung einseitig angeordneter strukturierter Kontakte in einer Schichtanordnung für ein photovoltaisches Bauelement
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
CN105449042A (zh) * 2015-12-29 2016-03-30 浙江晶科能源有限公司 钝化发射极背表面电池的制备方法
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
JP7053892B2 (ja) * 2018-12-27 2022-04-12 株式会社カネカ 太陽電池の製造方法
JP7274899B2 (ja) * 2019-03-22 2023-05-17 株式会社カネカ 太陽電池の製造方法
KR102365141B1 (ko) * 2019-09-17 2022-02-21 울산과학기술원 공극을 포함하는 투명 태양전지 및 이의 제조방법
JP7458834B2 (ja) * 2020-03-12 2024-04-01 株式会社カネカ 太陽電池および太陽電池の製造方法
CN114883424B (zh) * 2022-05-25 2023-11-21 中国科学院电工研究所 一种基于丝网印刷制备全背接触晶硅异质结太阳电池结构的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134090A (en) * 1982-06-18 1992-07-28 At&T Bell Laboratories Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
JPS6292485A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 太陽電池の製造方法
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5053083A (en) 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5213628A (en) 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JP3203078B2 (ja) * 1992-12-09 2001-08-27 三洋電機株式会社 光起電力素子
JPH06204532A (ja) * 1992-12-28 1994-07-22 Canon Inc 太陽電池のグリッド電極の製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
JP2001094136A (ja) * 1999-09-22 2001-04-06 Canon Inc 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法
JP4169463B2 (ja) * 2000-08-29 2008-10-22 三洋電機株式会社 光起電力素子の製造方法
CN100401532C (zh) * 2001-11-26 2008-07-09 壳牌阳光有限公司 太阳能电池及其制造方法
JP3902534B2 (ja) * 2001-11-29 2007-04-11 三洋電機株式会社 光起電力装置及びその製造方法
JP2003298078A (ja) * 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
JP4155899B2 (ja) * 2003-09-24 2008-09-24 三洋電機株式会社 光起電力素子の製造方法
FR2880989B1 (fr) 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7860841B2 (en) * 2005-09-09 2010-12-28 Sap Ag Method and apparatus to support mass changes to business objects in an integrated computer system
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
FR2906405B1 (fr) * 2006-09-22 2008-12-19 Commissariat Energie Atomique Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique
US8349644B2 (en) * 2007-10-18 2013-01-08 e-Cube Energy Technologies, Ltd. Mono-silicon solar cells
US8779280B2 (en) * 2009-08-18 2014-07-15 Lg Electronics Inc. Solar cell and method of manufacturing the same

Also Published As

Publication number Publication date
JP2010504636A (ja) 2010-02-12
US7972894B2 (en) 2011-07-05
US20100087031A1 (en) 2010-04-08
EP2067174A2 (fr) 2009-06-10
FR2906406A1 (fr) 2008-03-28
WO2008037658A3 (fr) 2008-05-22
WO2008037658A2 (fr) 2008-04-03

Similar Documents

Publication Publication Date Title
FR2906406B1 (fr) Procede de realisation de cellule photovoltaique a heterojonction en face arriere.
FR2919758B1 (fr) Systeme de groupement de cellules solaires photovoltaiques a concentrateurs.
GB0615651D0 (en) A process for manufacturing solar cells
EP2182556A4 (fr) Procédé de fabrication de cellule solaire
EP2169725A4 (fr) Procédé de fabrication de module de pile solaire
EP2168172A4 (fr) Procédés de fabrication d'une cellule solaire à composé iii-v en couche mince
EP2351101A4 (fr) Technique de fabrication d une cellule solaire
EP2211389A4 (fr) Batterie solaire, procédé de fabrication d'une batterie solaire, procédé de fabrication d'un module de batterie solaire et module de batterie solaire
AP2352A (en) A concentrating solar cell apparatus.
EP2168167A4 (fr) Structure de cellule solaire à nanofil
EP2109149A4 (fr) Cellule de batterie solaire, reseau de batteries solaires, module de batterie solaire et procede de fabrication d'un reseau de batteries solaires
HK1180106A1 (zh) 用於製造具有選擇性發射極的太陽能電池的方法
IL209780A (en) A process for producing electrodes for solar cells
EP2257986A4 (fr) Procede permettant de fabriquer des cellules solaires
EP2479804A4 (fr) Cellule solaire, son procédé de fabrication et module de cellule solaire
IL195802A0 (en) Mounting system, in particular for solar modules
EP2224534A4 (fr) Cellule solaire photosensibilisée, son procédé de fabrication et module de cellule solaire photosensibilisée
FR2906403B1 (fr) Procede de recuit de cellules photovoltaiques
EP2356695A4 (fr) Cellule solaire et son procédé de fabrication, et module de cellule solaire
EP2372780A4 (fr) Module de cellule solaire et son procédé de fabrication
EP2284909A4 (fr) Feuille adhésive pour panneau de cellule solaire, panneau de cellule solaire utilisant la feuille adhésive, et procédé de fabrication d'un panneau de cellule solaire utilisant la feuille adhésive
EP2296216A4 (fr) Pile solaire sensible au colorant, procédé de fabrication de pile solaire sensible au colorant et module de pile solaire sensible au colorant
PL2071216T3 (pl) Nadplastyczna uszczelka, korzystnie dla układu komórek elektrochemicznych
EP2524802A4 (fr) Feuille résistant aux intempéries pour module de pile solaire, produit obtenu à l'aide de la feuille, et procédé pour produire la feuille résistant aux intempéries pour module de pile solaire
FR2933959B1 (fr) Procede de fabrication de films directement en alveole.

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12