FR2906406B1 - Procede de realisation de cellule photovoltaique a heterojonction en face arriere. - Google Patents
Procede de realisation de cellule photovoltaique a heterojonction en face arriere.Info
- Publication number
- FR2906406B1 FR2906406B1 FR0653943A FR0653943A FR2906406B1 FR 2906406 B1 FR2906406 B1 FR 2906406B1 FR 0653943 A FR0653943 A FR 0653943A FR 0653943 A FR0653943 A FR 0653943A FR 2906406 B1 FR2906406 B1 FR 2906406B1
- Authority
- FR
- France
- Prior art keywords
- producing
- photovoltaic cell
- side heterojunction
- heterojunction
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0653943A FR2906406B1 (fr) | 2006-09-26 | 2006-09-26 | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
EP07803574A EP2067174A2 (fr) | 2006-09-26 | 2007-09-21 | Procede de realisation de cellule photovoltaique a heterojonction en face arriere |
US12/442,853 US7972894B2 (en) | 2006-09-26 | 2007-09-21 | Method of producing a photovoltaic cell with a heterojunction on the rear face |
PCT/EP2007/060016 WO2008037658A2 (fr) | 2006-09-26 | 2007-09-21 | Procede de realisation de cellule photovoltaique a heterojonction en face arriere |
JP2009528733A JP2010504636A (ja) | 2006-09-26 | 2007-09-21 | 背面ヘテロ接合太陽電池製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0653943A FR2906406B1 (fr) | 2006-09-26 | 2006-09-26 | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2906406A1 FR2906406A1 (fr) | 2008-03-28 |
FR2906406B1 true FR2906406B1 (fr) | 2008-12-19 |
Family
ID=37963592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0653943A Active FR2906406B1 (fr) | 2006-09-26 | 2006-09-26 | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
Country Status (5)
Country | Link |
---|---|
US (1) | US7972894B2 (fr) |
EP (1) | EP2067174A2 (fr) |
JP (1) | JP2010504636A (fr) |
FR (1) | FR2906406B1 (fr) |
WO (1) | WO2008037658A2 (fr) |
Families Citing this family (63)
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US20070169808A1 (en) * | 2006-01-26 | 2007-07-26 | Kherani Nazir P | Solar cell |
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KR101142861B1 (ko) * | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
US7927910B2 (en) * | 2009-06-28 | 2011-04-19 | Sino-American Silicon Products Inc. | Manufacturing method of solar cell |
KR101146736B1 (ko) * | 2009-09-14 | 2012-05-17 | 엘지전자 주식회사 | 태양 전지 |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
KR20110071375A (ko) * | 2009-12-21 | 2011-06-29 | 현대중공업 주식회사 | 후면전계형 이종접합 태양전지 및 그 제조방법 |
US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US20120012170A1 (en) * | 2010-07-19 | 2012-01-19 | Institutt For Energiteknikk | Processed silicon wafer, silicon chip, and method and apparatus for production thereof |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
WO2012132616A1 (fr) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | Procédé de fabrication d'un élément de conversion photoélectrique |
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JPWO2012132766A1 (ja) * | 2011-03-28 | 2014-07-28 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
CN102214719B (zh) * | 2011-06-10 | 2013-05-01 | 山东力诺太阳能电力股份有限公司 | 基于n型硅片的背接触异质结太阳电池 |
WO2013038768A1 (fr) * | 2011-09-12 | 2013-03-21 | 三洋電機株式会社 | Cellule solaire et son procédé de fabrication |
KR20130050721A (ko) | 2011-11-08 | 2013-05-16 | 삼성에스디아이 주식회사 | 태양 전지 |
US20130146136A1 (en) * | 2011-12-13 | 2013-06-13 | Kyoung-Jin Seo | Photovoltaic device and method of manufacturing the same |
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US20130157409A1 (en) * | 2011-12-16 | 2013-06-20 | Kaushik Vaidya | Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices |
KR101948206B1 (ko) * | 2012-03-02 | 2019-02-14 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 태양 전지와, 이의 제조 방법 |
JP6032911B2 (ja) * | 2012-03-23 | 2016-11-30 | シャープ株式会社 | 光電変換素子およびその製造方法 |
JP5774204B2 (ja) * | 2012-03-29 | 2015-09-09 | 三菱電機株式会社 | 光起電力素子およびその製造方法、太陽電池モジュール |
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US9577134B2 (en) * | 2013-12-09 | 2017-02-21 | Sunpower Corporation | Solar cell emitter region fabrication using self-aligned implant and cap |
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WO2016147565A1 (fr) * | 2015-03-16 | 2016-09-22 | パナソニックIpマネジメント株式会社 | Cellule de batterie solaire |
KR101689471B1 (ko) * | 2015-06-15 | 2016-12-26 | 한양대학교 산학협력단 | 금속 칼코겐 화합물 박막 및 그 제조 방법 |
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CN105449042A (zh) * | 2015-12-29 | 2016-03-30 | 浙江晶科能源有限公司 | 钝化发射极背表面电池的制备方法 |
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US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
JP7053892B2 (ja) * | 2018-12-27 | 2022-04-12 | 株式会社カネカ | 太陽電池の製造方法 |
JP7274899B2 (ja) * | 2019-03-22 | 2023-05-17 | 株式会社カネカ | 太陽電池の製造方法 |
KR102365141B1 (ko) * | 2019-09-17 | 2022-02-21 | 울산과학기술원 | 공극을 포함하는 투명 태양전지 및 이의 제조방법 |
JP7458834B2 (ja) * | 2020-03-12 | 2024-04-01 | 株式会社カネカ | 太陽電池および太陽電池の製造方法 |
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FR2906405B1 (fr) * | 2006-09-22 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de regions dopees dans un substrat et de cellule photovoltaique |
US8349644B2 (en) * | 2007-10-18 | 2013-01-08 | e-Cube Energy Technologies, Ltd. | Mono-silicon solar cells |
US8779280B2 (en) * | 2009-08-18 | 2014-07-15 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
-
2006
- 2006-09-26 FR FR0653943A patent/FR2906406B1/fr active Active
-
2007
- 2007-09-21 JP JP2009528733A patent/JP2010504636A/ja active Pending
- 2007-09-21 US US12/442,853 patent/US7972894B2/en not_active Expired - Fee Related
- 2007-09-21 EP EP07803574A patent/EP2067174A2/fr not_active Withdrawn
- 2007-09-21 WO PCT/EP2007/060016 patent/WO2008037658A2/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2010504636A (ja) | 2010-02-12 |
US7972894B2 (en) | 2011-07-05 |
US20100087031A1 (en) | 2010-04-08 |
EP2067174A2 (fr) | 2009-06-10 |
FR2906406A1 (fr) | 2008-03-28 |
WO2008037658A3 (fr) | 2008-05-22 |
WO2008037658A2 (fr) | 2008-04-03 |
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