DE602006002249D1 - Verfahren zur Dotierung mit Hilfe von Diffusion, Oberflächenoxidation und Rückätzung sowie Verfahren zur Herstellung von Solarzellen - Google Patents
Verfahren zur Dotierung mit Hilfe von Diffusion, Oberflächenoxidation und Rückätzung sowie Verfahren zur Herstellung von SolarzellenInfo
- Publication number
- DE602006002249D1 DE602006002249D1 DE602006002249T DE602006002249T DE602006002249D1 DE 602006002249 D1 DE602006002249 D1 DE 602006002249D1 DE 602006002249 T DE602006002249 T DE 602006002249T DE 602006002249 T DE602006002249 T DE 602006002249T DE 602006002249 D1 DE602006002249 D1 DE 602006002249D1
- Authority
- DE
- Germany
- Prior art keywords
- solar cells
- diffusion
- etching back
- doping
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000005530 etching Methods 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000010301 surface-oxidation reaction Methods 0.000 title 1
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Weting (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06112217A EP1843389B1 (de) | 2006-04-04 | 2006-04-04 | Verfahren zur Dotierung mit Hilfe von Diffusion, Oberflächenoxidation und Rückätzung sowie Verfahren zur Herstellung von Solarzellen |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006002249D1 true DE602006002249D1 (de) | 2008-09-25 |
Family
ID=36384380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006002249T Active DE602006002249D1 (de) | 2006-04-04 | 2006-04-04 | Verfahren zur Dotierung mit Hilfe von Diffusion, Oberflächenoxidation und Rückätzung sowie Verfahren zur Herstellung von Solarzellen |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1843389B1 (de) |
AT (1) | ATE404991T1 (de) |
DE (1) | DE602006002249D1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8053867B2 (en) | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
US7951696B2 (en) | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
US7820532B2 (en) | 2008-12-29 | 2010-10-26 | Honeywell International Inc. | Methods for simultaneously forming doped regions having different conductivity-determining type element profiles |
US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
WO2011038718A2 (de) | 2009-09-30 | 2011-04-07 | Systaic Cells Gmbh | Behandlung und herstellung selektiver emitter von solarzellen |
DE102011050055A1 (de) | 2010-09-03 | 2012-04-26 | Schott Solar Ag | Verfahren zum nasschemischen Ätzen einer Silziumschicht |
DE102011050136A1 (de) | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Verfahren zum nasschemischen Ätzen einer Siliziumschicht |
DE102010037355A1 (de) | 2010-09-06 | 2012-03-08 | Schott Solar Ag | Kristalline Solarzelle und Verfahren zur Herstellung einer solchen |
TWI431797B (zh) | 2010-10-19 | 2014-03-21 | Ind Tech Res Inst | 選擇性射極之太陽能電池及其製作方法 |
DE102011000861A1 (de) * | 2011-02-22 | 2012-08-23 | Rena Gmbh | Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens |
DE102011050214A1 (de) * | 2011-05-09 | 2012-11-15 | Centrotherm Photovoltaics Ag | Verfahren zur Herstellung einer Solarzelle mit einer mehrstufigen Dotierung |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
CN102290491A (zh) * | 2011-08-31 | 2011-12-21 | 无锡赛晶太阳能有限公司 | 一种晶体硅太阳能电池片扩散层的刻蚀方法 |
US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
DE102012018746A1 (de) * | 2012-09-21 | 2014-03-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Dotierung von Halbleitersubstraten |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152824A (en) * | 1977-12-30 | 1979-05-08 | Mobil Tyco Solar Energy Corporation | Manufacture of solar cells |
FR2484709A1 (fr) * | 1980-06-16 | 1981-12-18 | Radiotechnique Compelec | Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords |
US5871591A (en) * | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
US7402448B2 (en) * | 2003-01-31 | 2008-07-22 | Bp Corporation North America Inc. | Photovoltaic cell and production thereof |
-
2006
- 2006-04-04 AT AT06112217T patent/ATE404991T1/de not_active IP Right Cessation
- 2006-04-04 EP EP06112217A patent/EP1843389B1/de not_active Not-in-force
- 2006-04-04 DE DE602006002249T patent/DE602006002249D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
ATE404991T1 (de) | 2008-08-15 |
EP1843389B1 (de) | 2008-08-13 |
EP1843389A1 (de) | 2007-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SOLARWORLD INDUSTRIES DEUTSCHLAND GMBH, 53175 , DE |