ATE545158T1 - Vorrichtung zur herstellung eines photovoltaischen elements mit stabilisierter effizienz - Google Patents

Vorrichtung zur herstellung eines photovoltaischen elements mit stabilisierter effizienz

Info

Publication number
ATE545158T1
ATE545158T1 AT09179651T AT09179651T ATE545158T1 AT E545158 T1 ATE545158 T1 AT E545158T1 AT 09179651 T AT09179651 T AT 09179651T AT 09179651 T AT09179651 T AT 09179651T AT E545158 T1 ATE545158 T1 AT E545158T1
Authority
AT
Austria
Prior art keywords
photovoltaic element
silicon substrate
treatment step
efficiency
stabilisation
Prior art date
Application number
AT09179651T
Other languages
English (en)
Inventor
Axel Herguth
Martin Kaes
Giso Hahn
Ihor Melnyk
Gunnar Schubert
Original Assignee
Univ Konstanz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Konstanz filed Critical Univ Konstanz
Application granted granted Critical
Publication of ATE545158T1 publication Critical patent/ATE545158T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AT09179651T 2006-03-21 2007-03-21 Vorrichtung zur herstellung eines photovoltaischen elements mit stabilisierter effizienz ATE545158T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006012920A DE102006012920B3 (de) 2006-03-21 2006-03-21 Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad

Publications (1)

Publication Number Publication Date
ATE545158T1 true ATE545158T1 (de) 2012-02-15

Family

ID=38169429

Family Applications (2)

Application Number Title Priority Date Filing Date
AT09179651T ATE545158T1 (de) 2006-03-21 2007-03-21 Vorrichtung zur herstellung eines photovoltaischen elements mit stabilisierter effizienz
AT07723459T ATE453211T1 (de) 2006-03-21 2007-03-21 Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT07723459T ATE453211T1 (de) 2006-03-21 2007-03-21 Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad

Country Status (9)

Country Link
US (2) US8263176B2 (de)
EP (2) EP1997157B1 (de)
CN (1) CN101405875B (de)
AT (2) ATE545158T1 (de)
DE (2) DE102006012920B3 (de)
ES (2) ES2381979T3 (de)
PT (1) PT1997157E (de)
TW (1) TWI495132B (de)
WO (1) WO2007107351A1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009025998A1 (de) * 2009-06-18 2010-12-30 Q-Cells Se Wirkungsgradstabilisierungsverfahren für Solarzellen
FR2949607B1 (fr) * 2009-09-03 2011-10-21 Commissariat Energie Atomique Procede de traitement de cellules photovoltaiques contre la diminution du rendement lors de l'eclairement
DE102009059300B4 (de) * 2009-12-23 2019-11-28 Solarworld Industries Gmbh Photovoltaikzellen-Transport- und -Regenerationsbehälter
US9202964B2 (en) * 2010-03-01 2015-12-01 First Solar, Inc. System and method for photovoltaic device temperature control while conditioning a photovoltaic device
US8940556B2 (en) * 2010-03-01 2015-01-27 First Solar, Inc Electrical bias methods and apparatus for photovoltaic device manufacture
US20120211079A1 (en) * 2011-02-23 2012-08-23 International Business Machines Corporation Silicon photovoltaic element and fabrication method
EP2715805B1 (de) 2011-06-03 2016-04-06 MEMC Singapore Pte. Ltd. Verfahren zur unterdrückung des verschleisses von minoritätsträgern bei siliziumwafern
TWI594447B (zh) * 2011-06-03 2017-08-01 Ｍｅｍｃ新加坡有限公司 在矽晶圓中抑制少數載子壽命衰減之製程及包括硼之矽晶圓
FR2977079B1 (fr) * 2011-06-27 2013-07-26 Commissariat Energie Atomique Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement
WO2013000894A2 (de) * 2011-06-28 2013-01-03 Saint-Gobain Glass France Verfahren zur schnellen stabilisierung der nennleistung eines dünnschichtsolarmoduls
DE102011056843A1 (de) * 2011-12-21 2013-06-27 Centrotherm Photovoltaics Ag Verfahren zur Stabilisierung eines Wirkungsgrades von Siliziumsolarzellen
CN106024611B (zh) 2012-05-21 2018-11-23 新南创新私人有限公司 用于处理半导体晶片的设备和方法
FR2995727B1 (fr) 2012-09-14 2014-10-24 Commissariat Energie Atomique Dispositif et procede de restauration de cellules photovoltaiques a base de silicium
FR2995728B1 (fr) 2012-09-14 2014-10-24 Commissariat Energie Atomique Dispositif et procede de restauration des cellules solaires a base de silicium avec transducteur ultrason
CN102969405A (zh) * 2012-12-12 2013-03-13 泰通(泰州)工业有限公司 一种高效浅结太阳能电池的扩散工艺
ES2830766T3 (es) 2013-06-26 2021-06-04 Univ Konstanz Procedimiento y dispositivo para producir un elemento fotovoltaico con eficiencia estabilizada
KR102230171B1 (ko) * 2013-07-26 2021-03-22 뉴사우스 이노베이션즈 피티와이 리미티드 실리콘에서의 열처리
DE102013113123B4 (de) * 2013-11-27 2021-11-18 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
CN105470351B (zh) * 2014-01-17 2019-04-19 盐城阿特斯阳光能源科技有限公司 一种减少晶体硅太阳能电池片衰减的方法
DE102014106292A1 (de) * 2014-05-06 2015-11-12 Hanwha Q Cells Gmbh Solarzellen-Behandlungsverfahren, Solarmodul-Behandlungsverfahren, Solarmodul-Herstellungsverfahren und Behandlungsvorrichtung
KR101569415B1 (ko) * 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
TWI513028B (zh) * 2014-08-15 2015-12-11 Motech Ind Inc 處理裝置
US9780252B2 (en) * 2014-10-17 2017-10-03 Tp Solar, Inc. Method and apparatus for reduction of solar cell LID
FR3028669B1 (fr) 2014-11-14 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de restauration de cellules solaires photovoltaiques a base de silicium
US10505069B2 (en) 2015-03-13 2019-12-10 Newsouth Innovations Pty Limited Method for processing silicon material
US10443941B2 (en) 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
DE102015108880A1 (de) 2015-06-04 2016-12-08 Hanwha Q.CELLS GmbH Vorrichtung und Verfahren zur Temperatursteuerung von gestapelten Photovaltaikzellen
DE102015114298A1 (de) 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
DE102015219087A1 (de) 2015-10-02 2017-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Stabilisierung der Konversionseffizienz von Siliziumsolarzellen
KR102293471B1 (ko) 2015-12-30 2021-08-24 현대에너지솔루션(주) 라미네이션 장치
CN107393971A (zh) * 2016-05-16 2017-11-24 昱晶能源科技股份有限公司 回复太阳能电池模块的效率的方法及其可携式装置
US10461212B2 (en) * 2016-06-06 2019-10-29 Newsouth Innovations Pty Limited Method for processing silicon material
WO2018009974A1 (en) * 2016-07-12 2018-01-18 Newsouth Innovations Pty Limited A method for manufacturing a photovoltaic device
CN107068806B (zh) * 2017-04-19 2018-10-19 常州时创能源科技有限公司 消除多晶硅电池片内部金属复合体的方法
CN108306612B (zh) 2017-12-20 2019-11-26 华为技术有限公司 一种光伏电站中的光伏组件衰减修复方法和装置
DE102018001057B4 (de) * 2018-02-07 2025-12-04 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle
CN109004061B (zh) * 2018-06-28 2023-07-18 华南理工大学 晶硅光伏太阳能电池电注入退火测试装置及方法
US12009451B2 (en) 2018-07-30 2024-06-11 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
DE102019102227A1 (de) 2019-01-29 2019-11-14 Universität Konstanz Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen
CN111129211B (zh) * 2019-12-05 2021-11-16 广东爱旭科技有限公司 一种改善perc太阳能电池载流子衰减的方法及设备
DE102021132240A1 (de) 2021-12-08 2023-06-15 Hanwha Q Cells Gmbh Anlage zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle und Verfahren zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850612A (en) * 1953-10-29 1958-09-02 Gen Electric Electric baking and broiling ovens
US3597281A (en) * 1969-05-02 1971-08-03 Nasa Recovery of radiation damaged solar cells through thermanl annealing
US4494302A (en) * 1981-03-23 1985-01-22 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
US5528071A (en) * 1990-01-18 1996-06-18 Russell; Jimmie L. P-I-N photodiode with transparent conductor n+layer
US5327005A (en) * 1991-12-18 1994-07-05 Santa Barbara Research Center Striped contact IR detector
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
WO2001071820A2 (en) 2000-03-22 2001-09-27 Aegis Semiconductor A semitransparent optical detector with a transparent conductor and method of making
JP3640609B2 (ja) * 2000-10-16 2005-04-20 アルプス電気株式会社 プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法
US7153722B2 (en) * 2003-06-06 2006-12-26 Canon Kabushiki Kaisha Method and apparatus for manufacturing photovoltaic device

Also Published As

Publication number Publication date
WO2007107351A1 (en) 2007-09-27
DE602007003963D1 (de) 2010-02-04
ES2338822T3 (es) 2010-05-12
TWI495132B (zh) 2015-08-01
EP2164114B1 (de) 2012-02-08
EP1997157A1 (de) 2008-12-03
ES2381979T9 (es) 2012-07-04
DE102006012920B3 (de) 2008-01-24
TW200814347A (en) 2008-03-16
PT1997157E (pt) 2010-03-29
ATE453211T1 (de) 2010-01-15
EP2164114A1 (de) 2010-03-17
US20100243036A1 (en) 2010-09-30
CN101405875B (zh) 2010-07-28
EP1997157B1 (de) 2009-12-23
ES2381979T3 (es) 2012-06-04
US8263176B2 (en) 2012-09-11
CN101405875A (zh) 2009-04-08
US20110162716A1 (en) 2011-07-07

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