CN107068806B - 消除多晶硅电池片内部金属复合体的方法 - Google Patents

消除多晶硅电池片内部金属复合体的方法 Download PDF

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CN107068806B
CN107068806B CN201710255951.7A CN201710255951A CN107068806B CN 107068806 B CN107068806 B CN 107068806B CN 201710255951 A CN201710255951 A CN 201710255951A CN 107068806 B CN107068806 B CN 107068806B
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polycrystalline silicon
battery plate
silicon battery
metal complex
interior metal
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CN107068806A (zh
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任常瑞
符黎明
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Changzhou Shichuang Energy Co Ltd
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Priority to MYPI2018700039A priority patent/MY184983A/en
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Abstract

本发明公开了一种消除多晶硅电池片内部金属复合体的方法，在一定温度条件下，通过电注入的方式，向多晶硅电池片注入电流，消除多晶硅电池片内部的金属复合体。本发明能消除多晶硅电池片内部金属复合体，进而提高多晶硅电池片的转换效率，且工艺步骤简单，处理时间短，成本低，适合批量生产。

Description

消除多晶硅电池片内部金属复合体的方法
技术领域
本发明涉及消除多晶硅电池片内部金属复合体的方法。
背景技术
在多晶硅电池片的生产工艺流程中，金属化时的高温烧结会使硅片内的原生金属沉淀分解形成不稳定的金属复合体，这些金属复合体具有一定的复合活性，会导致电池出现一定程度的效率下降。进一步，在多晶硅电池片的使用过程中，这些金属复合体会转变成复合活性较高的亚稳态，亚稳态金属复合体会导致电池转换效率进一步下降。且这些亚稳态金属复合体会继续分解，形成高复合活性的金属原子，这些金属原子会导致电池效率再进一步下降。
发明内容
本发明的目的在于提供一种消除多晶硅电池片内部金属复合体的方法，其能消除多晶硅电池片内部金属复合体，进而提高多晶硅电池片的转换效率，且工艺步骤简单，处理时间短，成本低，适合批量生产。
为实现上述目的，本发明的技术方案是设计一种消除多晶硅电池片内部金属复合体的方法，在一定温度条件下，通过电注入的方式，向多晶硅电池片注入电流，消除多晶硅电池片内部的金属复合体。
优选的，所述电注入的方式为：对多晶硅电池片施加正偏电压。
优选的，在250～350℃的温度条件下，进行电注入。
优选的，所述电注入过程中，注入电流控制在600～800mA/cm2。
优选的，所述电注入的时间控制在0.5～1min。
优选的，在300～350℃的温度条件下，进行电注入。
本发明的优点和有益效果在于：提供一种消除多晶硅电池片内部金属复合体的方法，其能消除多晶硅电池片内部金属复合体，进而提高多晶硅电池片的转换效率，且工艺步骤简单，处理时间短，成本低，适合批量生产。
本发明能加速金属复合体的转变，使其变成金属离子从而被表面俘获，提高电池的效率。更具体地来说，本发明能使多晶硅电池片中的金属复合体快速的分解成金属原子，并使金属原子快速的向多晶硅电池片表面扩散，最终使高复合活性的金属原子被全部俘获，失去复合活性，从而实现电池效率的升高。而且在多晶硅电池片的后续使用过程中，不会再发生效率的衰减。
本发明能使多晶硅太阳电池的转换效率获得增益，能使多晶硅太阳电池的效率绝对值提升约0.2%，本发明尤其适用于高效的多晶PERC电池。
本发明工艺步骤简单，可以使用较低成本的设备来实现，而且处理时间短，设备能耗较低，适合批量生产。
具体实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明具体实施的技术方案是：
一种消除多晶硅电池片内部金属复合体的方法，在一定温度条件下，通过电注入的方式，向多晶硅电池片注入电流，消除多晶硅电池片内部的金属复合体；
具体的工艺条件如下：
在250～350℃的温度条件下，进行电注入；
所述电注入的方式为：对多晶硅电池片施加正偏电压；
所述电注入过程中，注入电流控制在600～800mA/cm2；
所述电注入的时间控制在0.5～1min。
优选的，在300～350℃的温度条件下，进行电注入。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (2)

1.消除多晶硅电池片内部金属复合体的方法，其特征在于，在250～350℃的温度条件下，通过电注入的方式，向多晶硅电池片注入电流，消除多晶硅电池片内部的金属复合体；
所述电注入的方式为：对多晶硅电池片施加正偏电压；
所述电注入过程中，注入电流控制在600～800mA/cm2；
所述电注入的时间控制在0.5min。
2.根据权利要求1所述的消除多晶硅电池片内部金属复合体的方法，其特征在于，在300～350℃的温度条件下，进行电注入。
CN201710255951.7A 2017-04-19 2017-04-19 消除多晶硅电池片内部金属复合体的方法 Active CN107068806B (zh)

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Application Number Priority Date Filing Date Title
CN201710255951.7A CN107068806B (zh) 2017-04-19 2017-04-19 消除多晶硅电池片内部金属复合体的方法
KR1020170172825A KR20180117522A (ko) 2017-04-19 2017-12-15 다결정 실리콘 셀 내부 금속 복합체를 제거하는 방법
JP2017246987A JP6434607B2 (ja) 2017-04-19 2017-12-22 多結晶シリコンセル内部の金属複合体の除去方法
MYPI2018700039A MY184983A (en) 2017-04-19 2018-01-04 Method for eliminating metal composites from polycrystalline silicon cell piece
US15/868,755 US10276741B2 (en) 2017-04-19 2018-01-11 Method for eliminating metal composites from polycrystalline silicon cell piece
SG10201800661UA SG10201800661UA (en) 2017-04-19 2018-01-25 Method for eliminating metal composites from polycrystalline silicon cell piece
KR1020190168438A KR102154937B1 (ko) 2017-04-19 2019-12-17 다결정 실리콘 셀 내부 금속 복합체를 제거하는 방법

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