ATE548759T1 - Verfahren zur herstellung einer festkörperabbildungsvorrichtung - Google Patents

Verfahren zur herstellung einer festkörperabbildungsvorrichtung

Info

Publication number
ATE548759T1
ATE548759T1 AT10000005T AT10000005T ATE548759T1 AT E548759 T1 ATE548759 T1 AT E548759T1 AT 10000005 T AT10000005 T AT 10000005T AT 10000005 T AT10000005 T AT 10000005T AT E548759 T1 ATE548759 T1 AT E548759T1
Authority
AT
Austria
Prior art keywords
layer
silicon
forming
epitaxial growth
substrate
Prior art date
Application number
AT10000005T
Other languages
English (en)
Inventor
Chiaki Sakai
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of ATE548759T1 publication Critical patent/ATE548759T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
AT10000005T 2009-01-20 2010-01-04 Verfahren zur herstellung einer festkörperabbildungsvorrichtung ATE548759T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009009525A JP5347520B2 (ja) 2009-01-20 2009-01-20 固体撮像装置の製造方法

Publications (1)

Publication Number Publication Date
ATE548759T1 true ATE548759T1 (de) 2012-03-15

Family

ID=42077600

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10000005T ATE548759T1 (de) 2009-01-20 2010-01-04 Verfahren zur herstellung einer festkörperabbildungsvorrichtung

Country Status (7)

Country Link
US (2) US7897427B2 (de)
EP (1) EP2209140B1 (de)
JP (1) JP5347520B2 (de)
KR (1) KR20100085826A (de)
CN (1) CN101783321A (de)
AT (1) ATE548759T1 (de)
TW (1) TWI431768B (de)

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JP5347520B2 (ja) * 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
TWI419316B (zh) * 2010-08-04 2013-12-11 Himax Imagimg Inc 感測裝置及其製造方法
JP5665599B2 (ja) 2011-02-24 2015-02-04 株式会社東芝 半導体装置および半導体装置の製造方法
JP5481419B2 (ja) 2011-03-25 2014-04-23 株式会社東芝 半導体装置の製造方法
JP2013012574A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
US9294691B2 (en) * 2011-09-06 2016-03-22 Sony Corporation Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method
KR101323001B1 (ko) * 2012-02-29 2013-10-29 주식회사 엘지실트론 이미지 센서 및 이의 제조 방법
US9041206B2 (en) * 2013-03-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method
CN103441132A (zh) * 2013-07-10 2013-12-11 上海新储集成电路有限公司 一种用低温裂片硅晶圆制备背照射cmos图像传感器的方法
CN104347385A (zh) * 2013-07-23 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法
TWI694604B (zh) 2015-07-23 2020-05-21 光澄科技股份有限公司 光偵測器
US10707260B2 (en) 2015-08-04 2020-07-07 Artilux, Inc. Circuit for operating a multi-gate VIS/IR photodiode
US10861888B2 (en) 2015-08-04 2020-12-08 Artilux, Inc. Silicon germanium imager with photodiode in trench
US10761599B2 (en) 2015-08-04 2020-09-01 Artilux, Inc. Eye gesture tracking
WO2017024121A1 (en) 2015-08-04 2017-02-09 Artilux Corporation Germanium-silicon light sensing apparatus
EP3783656B1 (de) 2015-08-27 2023-08-23 Artilux Inc. Optischer sensor mit breitem spektrum
US10739443B2 (en) 2015-11-06 2020-08-11 Artilux, Inc. High-speed light sensing apparatus II
US10741598B2 (en) 2015-11-06 2020-08-11 Atrilux, Inc. High-speed light sensing apparatus II
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
TWI788246B (zh) 2018-02-23 2022-12-21 美商光程研創股份有限公司 光偵測裝置
TWI780007B (zh) 2018-04-08 2022-10-01 美商光程研創股份有限公司 光偵測裝置及其系統
TWI795562B (zh) 2018-05-07 2023-03-11 美商光程研創股份有限公司 雪崩式之光電晶體
US10969877B2 (en) 2018-05-08 2021-04-06 Artilux, Inc. Display apparatus
US20240105419A1 (en) * 2022-09-23 2024-03-28 Intel Corporation Altering operational characteristics of a semiconductor device using accelerated ions

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JPH11354525A (ja) * 1998-06-11 1999-12-24 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
JP4487369B2 (ja) * 2000-03-13 2010-06-23 ソニー株式会社 固体撮像素子及びその製造方法、並びに固体撮像素子の露光時間制御方法
FR2829290B1 (fr) * 2001-08-31 2004-09-17 Atmel Grenoble Sa Capteur d'image couleur sur substrat transparent et procede de fabrication
JP4211696B2 (ja) 2004-06-30 2009-01-21 ソニー株式会社 固体撮像装置の製造方法
KR100632463B1 (ko) * 2005-02-07 2006-10-11 삼성전자주식회사 에피택셜 반도체 기판의 제조 방법과 이를 이용한 이미지센서의 제조 방법, 에피택셜 반도체 기판 및 이를 이용한이미지 센서
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Also Published As

Publication number Publication date
US8524574B2 (en) 2013-09-03
EP2209140B1 (de) 2012-03-07
KR20100085826A (ko) 2010-07-29
EP2209140A1 (de) 2010-07-21
US20110136295A1 (en) 2011-06-09
JP5347520B2 (ja) 2013-11-20
TWI431768B (zh) 2014-03-21
US20100184246A1 (en) 2010-07-22
US7897427B2 (en) 2011-03-01
CN101783321A (zh) 2010-07-21
JP2010171036A (ja) 2010-08-05
TW201103133A (en) 2011-01-16

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