ATE548759T1 - Verfahren zur herstellung einer festkörperabbildungsvorrichtung - Google Patents

Verfahren zur herstellung einer festkörperabbildungsvorrichtung

Info

Publication number
ATE548759T1
ATE548759T1 AT10000005T AT10000005T ATE548759T1 AT E548759 T1 ATE548759 T1 AT E548759T1 AT 10000005 T AT10000005 T AT 10000005T AT 10000005 T AT10000005 T AT 10000005T AT E548759 T1 ATE548759 T1 AT E548759T1
Authority
AT
Austria
Prior art keywords
layer
silicon
forming
epitaxial growth
substrate
Prior art date
Application number
AT10000005T
Other languages
English (en)
Inventor
Chiaki Sakai
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of ATE548759T1 publication Critical patent/ATE548759T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
AT10000005T 2009-01-20 2010-01-04 Verfahren zur herstellung einer festkörperabbildungsvorrichtung ATE548759T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009009525A JP5347520B2 (ja) 2009-01-20 2009-01-20 固体撮像装置の製造方法

Publications (1)

Publication Number Publication Date
ATE548759T1 true ATE548759T1 (de) 2012-03-15

Family

ID=42077600

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10000005T ATE548759T1 (de) 2009-01-20 2010-01-04 Verfahren zur herstellung einer festkörperabbildungsvorrichtung

Country Status (7)

Country Link
US (2) US7897427B2 (de)
EP (1) EP2209140B1 (de)
JP (1) JP5347520B2 (de)
KR (1) KR20100085826A (de)
CN (1) CN101783321A (de)
AT (1) ATE548759T1 (de)
TW (1) TWI431768B (de)

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JP5347520B2 (ja) * 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
TWI419316B (zh) * 2010-08-04 2013-12-11 Himax Imagimg Inc 感測裝置及其製造方法
JP5665599B2 (ja) * 2011-02-24 2015-02-04 株式会社東芝 半導体装置および半導体装置の製造方法
JP5481419B2 (ja) 2011-03-25 2014-04-23 株式会社東芝 半導体装置の製造方法
JP2013012574A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
US9294691B2 (en) * 2011-09-06 2016-03-22 Sony Corporation Imaging device, imaging apparatus, manufacturing apparatus and manufacturing method
KR101323001B1 (ko) * 2012-02-29 2013-10-29 주식회사 엘지실트론 이미지 센서 및 이의 제조 방법
US9041206B2 (en) * 2013-03-12 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure and method
CN103441132A (zh) * 2013-07-10 2013-12-11 上海新储集成电路有限公司 一种用低温裂片硅晶圆制备背照射cmos图像传感器的方法
CN104347385A (zh) * 2013-07-23 2015-02-11 中芯国际集成电路制造(上海)有限公司 一种半导体器件的选择性刻蚀方法及bsi图像传感器制作方法
TWI676281B (zh) 2015-07-23 2019-11-01 光澄科技股份有限公司 光偵測器及其製造方法
US10761599B2 (en) 2015-08-04 2020-09-01 Artilux, Inc. Eye gesture tracking
CN108028258B (zh) 2015-08-04 2022-06-21 光程研创股份有限公司 锗硅感光设备
US10707260B2 (en) 2015-08-04 2020-07-07 Artilux, Inc. Circuit for operating a multi-gate VIS/IR photodiode
US10861888B2 (en) 2015-08-04 2020-12-08 Artilux, Inc. Silicon germanium imager with photodiode in trench
CN114754864B (zh) 2015-08-27 2023-03-24 光程研创股份有限公司 宽频谱光学传感器
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10741598B2 (en) 2015-11-06 2020-08-11 Atrilux, Inc. High-speed light sensing apparatus II
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
US10739443B2 (en) 2015-11-06 2020-08-11 Artilux, Inc. High-speed light sensing apparatus II
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
CN111868929B (zh) 2018-02-23 2021-08-03 奥特逻科公司 光检测装置及其光检测方法
JP7212062B2 (ja) 2018-04-08 2023-01-24 アーティラックス・インコーポレイテッド 光検出装置
TWI795562B (zh) 2018-05-07 2023-03-11 美商光程研創股份有限公司 雪崩式之光電晶體
US10969877B2 (en) 2018-05-08 2021-04-06 Artilux, Inc. Display apparatus
US20240105419A1 (en) * 2022-09-23 2024-03-28 Intel Corporation Altering operational characteristics of a semiconductor device using accelerated ions

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JP4940667B2 (ja) 2005-06-02 2012-05-30 ソニー株式会社 固体撮像素子及びその製造方法
JP4997879B2 (ja) * 2005-08-26 2012-08-08 ソニー株式会社 半導体装置及びその製造方法並びに固体撮像装置及びその製造方法並びに撮像装置
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Also Published As

Publication number Publication date
JP2010171036A (ja) 2010-08-05
EP2209140A1 (de) 2010-07-21
US8524574B2 (en) 2013-09-03
TWI431768B (zh) 2014-03-21
US20110136295A1 (en) 2011-06-09
JP5347520B2 (ja) 2013-11-20
US7897427B2 (en) 2011-03-01
TW201103133A (en) 2011-01-16
US20100184246A1 (en) 2010-07-22
KR20100085826A (ko) 2010-07-29
EP2209140B1 (de) 2012-03-07
CN101783321A (zh) 2010-07-21

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