DE602007003963D1 - Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad - Google Patents

Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad

Info

Publication number
DE602007003963D1
DE602007003963D1 DE602007003963T DE602007003963T DE602007003963D1 DE 602007003963 D1 DE602007003963 D1 DE 602007003963D1 DE 602007003963 T DE602007003963 T DE 602007003963T DE 602007003963 T DE602007003963 T DE 602007003963T DE 602007003963 D1 DE602007003963 D1 DE 602007003963D1
Authority
DE
Germany
Prior art keywords
photovoltaic element
silicon substrate
treatment step
stabilisation
efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602007003963T
Other languages
English (en)
Inventor
Axel Herguth
Martin Kaes
Giso Hahn
Ihor Melnyk
Gunnar Schubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitaet Konstanz
Original Assignee
Universitaet Konstanz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitaet Konstanz filed Critical Universitaet Konstanz
Publication of DE602007003963D1 publication Critical patent/DE602007003963D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
DE602007003963T 2006-03-21 2007-03-21 Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad Expired - Fee Related DE602007003963D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006012920A DE102006012920B3 (de) 2006-03-21 2006-03-21 Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
PCT/EP2007/002502 WO2007107351A1 (en) 2006-03-21 2007-03-21 Method for fabricating a photovoltaic element with stabilised efficiency

Publications (1)

Publication Number Publication Date
DE602007003963D1 true DE602007003963D1 (de) 2010-02-04

Family

ID=38169429

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102006012920A Active DE102006012920B3 (de) 2006-03-21 2006-03-21 Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
DE602007003963T Expired - Fee Related DE602007003963D1 (de) 2006-03-21 2007-03-21 Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102006012920A Active DE102006012920B3 (de) 2006-03-21 2006-03-21 Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad

Country Status (9)

Country Link
US (2) US8263176B2 (de)
EP (2) EP1997157B1 (de)
CN (1) CN101405875B (de)
AT (2) ATE453211T1 (de)
DE (2) DE102006012920B3 (de)
ES (2) ES2338822T3 (de)
PT (1) PT1997157E (de)
TW (1) TWI495132B (de)
WO (1) WO2007107351A1 (de)

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US9202964B2 (en) * 2010-03-01 2015-12-01 First Solar, Inc. System and method for photovoltaic device temperature control while conditioning a photovoltaic device
US8940556B2 (en) * 2010-03-01 2015-01-27 First Solar, Inc Electrical bias methods and apparatus for photovoltaic device manufacture
US20120211079A1 (en) * 2011-02-23 2012-08-23 International Business Machines Corporation Silicon photovoltaic element and fabrication method
EP2715805B1 (de) * 2011-06-03 2016-04-06 MEMC Singapore Pte. Ltd. Verfahren zur unterdrückung des verschleisses von minoritätsträgern bei siliziumwafern
TWI594447B (zh) * 2011-06-03 2017-08-01 Ｍｅｍｃ新加坡有限公司 在矽晶圓中抑制少數載子壽命衰減之製程及包括硼之矽晶圓
FR2977079B1 (fr) * 2011-06-27 2013-07-26 Commissariat Energie Atomique Procede de traitement de cellules photovoltaiques a heterojonction pour ameliorer et stabiliser leur rendement
EP2727155B1 (de) * 2011-06-28 2019-08-07 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Verfahren zur schnellen stabilisierung der nennleistung eines dünnschichtsolarmoduls
DE102011056843A1 (de) 2011-12-21 2013-06-27 Centrotherm Photovoltaics Ag Verfahren zur Stabilisierung eines Wirkungsgrades von Siliziumsolarzellen
WO2013173867A1 (en) 2012-05-21 2013-11-28 Newsouth Innovations Pty Limited Advanced hydrogenation of silicon solar cells
FR2995728B1 (fr) * 2012-09-14 2014-10-24 Commissariat Energie Atomique Dispositif et procede de restauration des cellules solaires a base de silicium avec transducteur ultrason
FR2995727B1 (fr) * 2012-09-14 2014-10-24 Commissariat Energie Atomique Dispositif et procede de restauration de cellules photovoltaiques a base de silicium
CN102969405A (zh) * 2012-12-12 2013-03-13 泰通(泰州)工业有限公司 一种高效浅结太阳能电池的扩散工艺
KR101807381B1 (ko) * 2013-06-26 2018-01-10 우니페르시테트 콘스탄츠 안정화된 효율을 가지는 광기전력 소자를 생산하기 위한 방법 및 디바이스
EP3025377B1 (de) * 2013-07-26 2020-04-01 NewSouth Innovations Pty Limited Thermische behandlung in silicium
DE102013113123B4 (de) * 2013-11-27 2021-11-18 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
CN105470351B (zh) * 2014-01-17 2019-04-19 盐城阿特斯阳光能源科技有限公司 一种减少晶体硅太阳能电池片衰减的方法
DE102014106292A1 (de) * 2014-05-06 2015-11-12 Hanwha Q Cells Gmbh Solarzellen-Behandlungsverfahren, Solarmodul-Behandlungsverfahren, Solarmodul-Herstellungsverfahren und Behandlungsvorrichtung
KR101569415B1 (ko) * 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
TWI513028B (zh) * 2014-08-15 2015-12-11 Motech Ind Inc 處理裝置
US9780252B2 (en) * 2014-10-17 2017-10-03 Tp Solar, Inc. Method and apparatus for reduction of solar cell LID
FR3028669B1 (fr) 2014-11-14 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de restauration de cellules solaires photovoltaiques a base de silicium
TW201705229A (zh) * 2015-03-13 2017-02-01 新南創新私人有限公司 一種處理矽材料的方法
US10443941B2 (en) 2015-05-20 2019-10-15 Illinois Tool Works Inc. Light annealing in a cooling chamber of a firing furnace
DE102015108880A1 (de) 2015-06-04 2016-12-08 Hanwha Q.CELLS GmbH Vorrichtung und Verfahren zur Temperatursteuerung von gestapelten Photovaltaikzellen
DE102015114298A1 (de) 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
DE102015219087A1 (de) 2015-10-02 2017-04-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Stabilisierung der Konversionseffizienz von Siliziumsolarzellen
KR102293471B1 (ko) 2015-12-30 2021-08-24 현대에너지솔루션(주) 라미네이션 장치
CN107393971A (zh) * 2016-05-16 2017-11-24 昱晶能源科技股份有限公司 回复太阳能电池模块的效率的方法及其可携式装置
EP3465777A4 (de) * 2016-06-06 2019-05-08 NewSouth Innovations Pty Limited Verfahren zur bearbeitung eines siliciummaterials
US10923618B2 (en) 2016-07-12 2021-02-16 Newsouth Innovations Pty Limited Method for manufacturing a photovoltaic device
CN107068806B (zh) * 2017-04-19 2018-10-19 常州时创能源科技有限公司 消除多晶硅电池片内部金属复合体的方法
CN108306612B (zh) 2017-12-20 2019-11-26 华为技术有限公司 一种光伏电站中的光伏组件衰减修复方法和装置
DE102018001057A1 (de) * 2018-02-07 2019-08-08 Aic Hörmann Gmbh & Co. Kg Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Ermitterschicht einer Siliziumsolarzelle
CN109004061B (zh) * 2018-06-28 2023-07-18 华南理工大学 晶硅光伏太阳能电池电注入退火测试装置及方法
US12009451B2 (en) 2018-07-30 2024-06-11 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
DE102019102227A1 (de) 2019-01-29 2019-11-14 Universität Konstanz Vorrichtung zum Messen einer Strahlungsintensität insbesondere in einem Durchlaufofen
CN111129211B (zh) * 2019-12-05 2021-11-16 广东爱旭科技有限公司 一种改善perc太阳能电池载流子衰减的方法及设备
DE102021132240A1 (de) 2021-12-08 2023-06-15 Hanwha Q Cells Gmbh Anlage zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle und Verfahren zur Stabilisierung und/oder Verbesserung eines Wirkungsgrads einer Solarzelle

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US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same
WO2001071820A2 (en) 2000-03-22 2001-09-27 Aegis Semiconductor A semitransparent optical detector with a transparent conductor and method of making
JP3640609B2 (ja) * 2000-10-16 2005-04-20 アルプス電気株式会社 プラズマ処理装置，プラズマ処理システムおよびこれらの性能確認システム，検査方法
US7153722B2 (en) * 2003-06-06 2006-12-26 Canon Kabushiki Kaisha Method and apparatus for manufacturing photovoltaic device

Also Published As

Publication number Publication date
US8263176B2 (en) 2012-09-11
CN101405875B (zh) 2010-07-28
WO2007107351A1 (en) 2007-09-27
ES2381979T3 (es) 2012-06-04
EP2164114A1 (de) 2010-03-17
TWI495132B (zh) 2015-08-01
ATE453211T1 (de) 2010-01-15
ES2381979T9 (es) 2012-07-04
CN101405875A (zh) 2009-04-08
ES2338822T3 (es) 2010-05-12
ATE545158T1 (de) 2012-02-15
PT1997157E (pt) 2010-03-29
US20100243036A1 (en) 2010-09-30
EP1997157B1 (de) 2009-12-23
US20110162716A1 (en) 2011-07-07
TW200814347A (en) 2008-03-16
DE102006012920B3 (de) 2008-01-24
EP1997157A1 (de) 2008-12-03
EP2164114B1 (de) 2012-02-08

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee