ATE404991T1 - Verfahren zur dotierung mit hilfe von diffusion, oberflächenoxidation und rückätzung sowie verfahren zur herstellung von solarzellen - Google Patents

Verfahren zur dotierung mit hilfe von diffusion, oberflächenoxidation und rückätzung sowie verfahren zur herstellung von solarzellen

Info

Publication number
ATE404991T1
ATE404991T1 AT06112217T AT06112217T ATE404991T1 AT E404991 T1 ATE404991 T1 AT E404991T1 AT 06112217 T AT06112217 T AT 06112217T AT 06112217 T AT06112217 T AT 06112217T AT E404991 T1 ATE404991 T1 AT E404991T1
Authority
AT
Austria
Prior art keywords
solar cells
diffusion
doping
producing solar
etch back
Prior art date
Application number
AT06112217T
Other languages
English (en)
Inventor
Rainer Toelle
Original Assignee
Solarworld Ind Deutschland Gmb
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarworld Ind Deutschland Gmb filed Critical Solarworld Ind Deutschland Gmb
Application granted granted Critical
Publication of ATE404991T1 publication Critical patent/ATE404991T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Weting (AREA)
  • Photovoltaic Devices (AREA)
AT06112217T 2006-04-04 2006-04-04 Verfahren zur dotierung mit hilfe von diffusion, oberflächenoxidation und rückätzung sowie verfahren zur herstellung von solarzellen ATE404991T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06112217A EP1843389B1 (de) 2006-04-04 2006-04-04 Verfahren zur Dotierung mit Hilfe von Diffusion, Oberflächenoxidation und Rückätzung sowie Verfahren zur Herstellung von Solarzellen

Publications (1)

Publication Number Publication Date
ATE404991T1 true ATE404991T1 (de) 2008-08-15

Family

ID=36384380

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06112217T ATE404991T1 (de) 2006-04-04 2006-04-04 Verfahren zur dotierung mit hilfe von diffusion, oberflächenoxidation und rückätzung sowie verfahren zur herstellung von solarzellen

Country Status (3)

Country Link
EP (1) EP1843389B1 (de)
AT (1) ATE404991T1 (de)
DE (1) DE602006002249D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053867B2 (en) 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
US7951696B2 (en) 2008-09-30 2011-05-31 Honeywell International Inc. Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
US7820532B2 (en) 2008-12-29 2010-10-26 Honeywell International Inc. Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US8518170B2 (en) 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
US8324089B2 (en) 2009-07-23 2012-12-04 Honeywell International Inc. Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions
WO2011038718A2 (de) 2009-09-30 2011-04-07 Systaic Cells Gmbh Behandlung und herstellung selektiver emitter von solarzellen
DE102011050055A1 (de) 2010-09-03 2012-04-26 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Silziumschicht
DE102011050136A1 (de) 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
DE102010037355A1 (de) 2010-09-06 2012-03-08 Schott Solar Ag Kristalline Solarzelle und Verfahren zur Herstellung einer solchen
TWI431797B (zh) 2010-10-19 2014-03-21 Ind Tech Res Inst 選擇性射極之太陽能電池及其製作方法
DE102011000861A1 (de) * 2011-02-22 2012-08-23 Rena Gmbh Verfahren zum Behandeln eines Objekts, insbesondere eines Solarzellensubstrats, und Vorrichtung zur Durchführung des Verfahrens
DE102011050214A1 (de) * 2011-05-09 2012-11-15 Centrotherm Photovoltaics Ag Verfahren zur Herstellung einer Solarzelle mit einer mehrstufigen Dotierung
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
CN102290491A (zh) * 2011-08-31 2011-12-21 无锡赛晶太阳能有限公司 一种晶体硅太阳能电池片扩散层的刻蚀方法
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
DE102012018746A1 (de) * 2012-09-21 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
FR2484709A1 (fr) * 1980-06-16 1981-12-18 Radiotechnique Compelec Perfectionnement a la realisation d'une cellule solaire en vue de neutraliser les risques de mauvais isolement a l'endroit des bords
US5871591A (en) * 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
US6552414B1 (en) * 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof

Also Published As

Publication number Publication date
EP1843389B1 (de) 2008-08-13
EP1843389A1 (de) 2007-10-10
DE602006002249D1 (de) 2008-09-25

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