US2890976A - Monocrystalline tubular semiconductor - Google Patents

Monocrystalline tubular semiconductor Download PDF

Info

Publication number
US2890976A
US2890976A US478685A US47868554A US2890976A US 2890976 A US2890976 A US 2890976A US 478685 A US478685 A US 478685A US 47868554 A US47868554 A US 47868554A US 2890976 A US2890976 A US 2890976A
Authority
US
United States
Prior art keywords
core
semiconductor
tube
germanium
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US478685A
Inventor
Lehovec Kurt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sprague Electric Co
Original Assignee
Sprague Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sprague Electric Co filed Critical Sprague Electric Co
Priority to US478685A priority Critical patent/US2890976A/en
Application granted granted Critical
Publication of US2890976A publication Critical patent/US2890976A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B01J3/042—Pressure vessels, e.g. autoclaves in the form of a tube
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

Definitions

  • FIG. 2 MONOCRYSTALLINE TUBULAR SEMICONDUCTOR Filed Dec. 50, 1954 FIG. 2
  • This invention relates to new and improved monoa: ed Stes Patent 9 crystalline semiconductive structures and more particularly to novel embodiments of monocrystalline germanium and silicon having electrical and chemical applications.
  • Figure 1 is a perspective view of a container illustrating the present invention
  • Figure 2 is a sectional view of an open-ended tube representing another embodiment of this invention.
  • Figure 3 is a perspective view of a translator element typical of the present invention.
  • a tube of semiconductor material such as silicon or germanium is provided in the form of a single crystal.
  • These semiconductor materials are relatively inert in the chemical sense, more so than the metals generally used for reactor bombs.
  • the fact that they are in the form of a single crystal makes them exceptionally strong and easily capable of resisting the high pressure that may be applied to chemical reactions. Either of these materials in a wall thickness of for example, will withstand quite a few atmospheres of pressure.
  • the tubular construction can be provided by either drilling out the center of a suitably dimensioned rod, or by directly growing the semiconductor crystal around an elongated core.
  • a container in the form of a tube having one end open and one end closed. When used under pressure, the open end can be covered as by a semiconductor slab or lid, and the contact points of the lid to the bomb can be fused together by local heating.
  • the open mouth of the container can be provided with a securing element, such as external threads or lugs against which a correspondingly-shaped portion of the lid can be secured so as to form a cap.
  • Any soft material inert to the reactants can be used as a gasket between the container and cap. For temperatures of about 300 C. or below, polytetrafluoroethylene or lead sheet make suitable gaskets.
  • a container in the form shown in Fig. 1 can be effected in the manner described in U. S. Letters Patent 2,631,356, granted March 17, 1953, except that a solid inert core is inserted through the seed crystal and pulled outwith it as the crystallization growth progresses.
  • this is a conventionalway of growing semiconductor crystals, and the external diameter of the growing mass is readily controllable.
  • a carbon rod makes suitable core for the growth of a cylindrical germanium crystal.
  • the grown mass containing the core is subjected to a relatively low temperature, -70 C. for example, to facilitate the withdrawal.
  • a relatively low temperature is conveniently provided by Dry Ice.
  • the strength of the container can also be improved by smoothing its external surfaces, as by a machining and polishing operation.
  • the pulling of the mass can be controlled so that the growth is discontinued before the end of the core is reached.
  • the growing mass can then be quickly removed from the liquid material to provide a tube which is open at both ends.
  • lids or caps can be provided on both open ends.
  • a feature of the present invention is the fact that the tubular construction is also readily adapted for providing electrical translating elements such as are used in rectifiers or transistors.
  • the tube can be provided with an electrical conductivity junction.
  • the junction is readily furnished by merely doping the surface of the core with the appropriate type of impurity. At the high temperature of the growing operation, this impurity tends to diffuse into the semiconductor material from the core.
  • impurities providing the desired type of conductivity upon incorporation into the semiconductor can be introduced as follows:
  • the impurity is introduced into the space either inside or outside of the tube, and is diffused into the semiconductor by heat treatment. It is recommended to introduce the impurities in gaseous form; e.g. in an n-type germanium tube, boron hydride is passed at elevated temperatures, thereby rendering the inner side of the germanium p-type by diffusion of boron into the germanium.
  • Fig. 2 shows a single crystal semiconductor tube having an electrical conductivity junction provided in the above manner.
  • the body of material has its external portion 10 of one type of electrical conductivity such as the N-type, provided by an extremely small. content of antimony, for example.
  • the balance or inner portion 12 of the body can have a P-type electrical conductivity, as for example by reason of the diffusion of indium in small concentrations. At the limit of diffusion, there is a junction 14 where the different electrical conductivities meet.
  • the tube of Fig. 2 can be sliced transversely into thin rings which make suitable bodies to which contacts can be connected for making a rectifier or transistor.
  • Lowresistance, or so-called ohmic contacts can be applied, as by soldering, to the respective portions 10, 12 of the tube, before or after it is sliced.
  • Point contact electrodes can also be connected to the semiconductor slices whether or not they have a junction.
  • More than one junction can be provided in the tube or the individual slices, as by diffusing an additional impurity into the body from its external or internal face. Where the second diffusion takes place from the same face as the first dilfusion, the second should not penetrate as far as the first.
  • Fig'. 3 ⁇ shows'a slice of the above typeinwhich two junctions are present. Here the successivezones of the semiconductor are identified as 20, 22 and'24'Withthe intervening junctions 26 and 28.
  • the zo'n es can have either the N-P-Nor P- NP sequence, with suitable connections being provided as indicated above to complete a'corresponding type of transistor.
  • a germanium rod be connected asan anode with respect to a cathode of pointed 'form with the point advancing into the germanium as it is dissolved.
  • the electrolyit ic current will concentrate on the portions of the germanium close to the point of the cathode, the anodic dissolution will proceed in a penetrating fashion to create "an opening to 20 times the diameter of the pointed cathode, depending upon the distance that is maintained between the cathode and the anode.
  • a'suitable internal diameter is /zf or even less. For translating elements, internal diameters as little as- A "or even 3 are preferred.
  • LA bomb type chemical reactioncontainer in the 4 form of a tubular single crystal of semiconductor material of the class-consisting of silicon and germanium, the tube having a closed bottom.
  • a process for producing a monocrystalline tubular semi-conductor of a material of the class consisting of silicon and germanium which comprises inserting a core of an inert material havinga-thermal expansion co efiicient greater than the semi-conductor material into a seed crystal of the semi-conductor material, growing a crystal of the semi-conductor material on the core, and s'ubjectingthe grown crystal and core to a low tempera ture to facilitate removal of the core.
  • a tube of semiconductor material of the class coni sisting of silicon and germanium said tube being inthe form of an elongated single crystal, at least one end of said tube being closed to provide a bomb type chemical reaction container.
  • An annular semiconductor body of a material of the .class consisting of silicon and germanium said body being in the form ofan elongated annular single crystal, saidbody having atleast one concentrically disposed ringshaped-electrical'conductivity junction extending therethrough, said body having at least one closed end to provide a bomb type chemical reaction container capable of dilfusing conductioin impurities from saidring-shaped junction.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Description

MONOCRYSTALLINE TUBULAR SEMICONDUCTOR Filed Dec. 50, 1954 FIG. 2
INVENTOR. KU RT LEHOVEC BY cmm wg HIS ATTO NEYS MONDCRYSTALLINE TUBULAR SEMICONDUCTOR Kurt Lehovec,Williamstown, Mass., assignor to Sprague Electric Company, North Adams, Mass, a corporation of Massachusetts Application December 30, 1954, Serial No. 478,685
4 Claims. (Cl. 148-33) This invention relates to new and improved monoa: ed Stes Patent 9 crystalline semiconductive structures and more particularly to novel embodiments of monocrystalline germanium and silicon having electrical and chemical applications.
Some chemical reactions require containers that are quite inert at elevated temperatures and are able to withstand high pressures. Although the prior art bombs used for this purpose are readily constructed to withstand pressures, they are generally made of relatively active metal and are accordingly subject toattack by the reactants, particularly at elevated temperatures, so that the reactants frequently become contaminated.
Among the objects of this invention is the provision of improved containers in which the above difiiculty is minimized. It is a further object of this invention to provide monocrystalline tubular semiconductors that can be used to provide either containers or electrical translating elements for rectifiers, transistors or the like.
The above as well as additional objects and advantages of the present invention will be more apparent from the following description of several of its exemplifications taken in conjunction with the accompanying drawings, wherein:
Figure 1 is a perspective view of a container illustrating the present invention;
Figure 2 is a sectional view of an open-ended tube representing another embodiment of this invention; and
Figure 3 is a perspective view of a translator element typical of the present invention.
According to the present invention a tube of semiconductor material such as silicon or germanium is provided in the form of a single crystal. These semiconductor materials are relatively inert in the chemical sense, more so than the metals generally used for reactor bombs. In addition, the fact that they are in the form of a single crystal makes them exceptionally strong and easily capable of resisting the high pressure that may be applied to chemical reactions. Either of these materials in a wall thickness of for example, will withstand quite a few atmospheres of pressure.
The tubular construction can be provided by either drilling out the center of a suitably dimensioned rod, or by directly growing the semiconductor crystal around an elongated core. Referring to Fig. 1, there is shown a container in the form of a tube having one end open and one end closed. When used under pressure, the open end can be covered as by a semiconductor slab or lid, and the contact points of the lid to the bomb can be fused together by local heating. Alternatively, the open mouth of the container can be provided with a securing element, such as external threads or lugs against which a correspondingly-shaped portion of the lid can be secured so as to form a cap. Any soft material inert to the reactants can be used as a gasket between the container and cap. For temperatures of about 300 C. or below, polytetrafluoroethylene or lead sheet make suitable gaskets.
The growing of a container in the form shown in Fig. 1 can be effected in the manner described in U. S. Letters Patent 2,631,356, granted March 17, 1953, except that a solid inert core is inserted through the seed crystal and pulled outwith it as the crystallization growth progresses. As pointed out in that patent, this is a conventionalway of growing semiconductor crystals, and the external diameter of the growing mass is readily controllable. By selecting a core of a material that has a thermal expansion coefficient greater than that of the semiconductor material, .the withdrawal of the core from the grown mass of semiconductor is simplified. A carbon rod makes suitable core for the growth of a cylindrical germanium crystal. Best results are obtained, however, if the grown mass containing the core is subjected to a relatively low temperature, -70 C. for example, to facilitate the withdrawal. Such a temperature is conveniently provided by Dry Ice. The strength of the container can also be improved by smoothing its external surfaces, as by a machining and polishing operation.
Instead of having the crystal grown in such a way as to close one end of the tube, the pulling of the mass can be controlled so that the growth is discontinued before the end of the core is reached. In other words, the growing mass can then be quickly removed from the liquid material to provide a tube which is open at both ends. When such a tube is used as a reactor bomb, lids or caps can be provided on both open ends.
A feature of the present invention is the fact that the tubular construction is also readily adapted for providing electrical translating elements such as are used in rectifiers or transistors. To this end, the tube can be provided with an electrical conductivity junction. When the tube is grown from a liquid in the manner indicated above, the junction is readily furnished by merely doping the surface of the core with the appropriate type of impurity. At the high temperature of the growing operation, this impurity tends to diffuse into the semiconductor material from the core.
After the semiconductor tube has been grown, impurities providing the desired type of conductivity upon incorporation into the semiconductor can be introduced as follows: The impurity is introduced into the space either inside or outside of the tube, and is diffused into the semiconductor by heat treatment. It is recommended to introduce the impurities in gaseous form; e.g. in an n-type germanium tube, boron hydride is passed at elevated temperatures, thereby rendering the inner side of the germanium p-type by diffusion of boron into the germanium.
Fig. 2 shows a single crystal semiconductor tube having an electrical conductivity junction provided in the above manner. The body of material has its external portion 10 of one type of electrical conductivity such as the N-type, provided by an extremely small. content of antimony, for example. The balance or inner portion 12 of the body can have a P-type electrical conductivity, as for example by reason of the diffusion of indium in small concentrations. At the limit of diffusion, there is a junction 14 where the different electrical conductivities meet.
The tube of Fig. 2 can be sliced transversely into thin rings which make suitable bodies to which contacts can be connected for making a rectifier or transistor. Lowresistance, or so-called ohmic contacts can be applied, as by soldering, to the respective portions 10, 12 of the tube, before or after it is sliced. Point contact electrodes can also be connected to the semiconductor slices whether or not they have a junction.
More than one junction can be provided in the tube or the individual slices, as by diffusing an additional impurity into the body from its external or internal face. Where the second diffusion takes place from the same face as the first dilfusion, the second should not penetrate as far as the first. Fig'. 3{shows'a slice of the above typeinwhich two junctions are present. Here the successivezones of the semiconductor are identified as 20, 22 and'24'Withthe intervening junctions 26 and 28. The zo'n es can have either the N-P-Nor P- NP sequence, with suitable connections being provided as indicated above to complete a'corresponding type of transistor.
The presence or absence of a junction in a semiconductqr body has no effect on its ability to satisfactorily res-ist-pressuresas well as chemical attack when used as a container or bomb for chemical reactions. 7 Byway of example, the drilling out of a rod, referred to above,'canbe efiected either by a mechanical drilling arrangement using a standard drilling tool, or it can be ac- Tc omplished electromechamically. The electromechanical dissolution of germanium, for example, is described in the December 195 3- issue of the Proceedings of the I.R.E., volume 41, pages 1706+1708, and all that is. necessary is that a germanium rod be connected asan anode with respect to a cathode of pointed 'form with the point advancing into the germanium as it is dissolved. Inasmuch as the electrolyit ic current will concentrate on the portions of the germanium close to the point of the cathode, the anodic dissolution will proceed in a penetrating fashion to create "an opening to 20 times the diameter of the pointed cathode, depending upon the distance that is maintained between the cathode and the anode. To make a container for chemical reactions, a'suitable internal diameter is /zf or even less. For translating elements, internal diameters as little as- A "or even 3 are preferred. Asmany-apparently widelydifierent embodiments of this invention maybe made without departing from the spil-itandscope hereof, it is to be understood thatthe invention is notlimited to the specific embodiments hereof. except as defined in the appended claims. What is claimed is:
LA bomb type chemical reactioncontainer in the 4 form of a tubular single crystal of semiconductor material of the class-consisting of silicon and germanium, the tube having a closed bottom.
2. A process for producing a monocrystalline tubular semi-conductor of a material of the class consisting of silicon and germanium which comprises inserting a core of an inert material havinga-thermal expansion co efiicient greater than the semi-conductor material into a seed crystal of the semi-conductor material, growing a crystal of the semi-conductor material on the core, and s'ubjectingthe grown crystal and core to a low tempera ture to facilitate removal of the core.
3. A tube of semiconductor material of the class coni sisting of silicon and germanium, said tube being inthe form of an elongated single crystal, at least one end of said tube being closed to provide a bomb type chemical reaction container.
4. An annular semiconductor body of a material of the .class consisting of silicon and germanium, said body being in the form ofan elongated annular single crystal, saidbody having atleast one concentrically disposed ringshaped-electrical'conductivity junction extending therethrough, said body having at least one closed end to provide a bomb type chemical reaction container capable of dilfusing conductioin impurities from saidring-shaped junction.
References'Citedin the file of this patent UNITED STATES PATENTS OTHER REFERENCES B1 1 Cr tal r w h, page 508, 1951-

Claims (1)

  1. 2. A PROCESS FOR PRODUCING A MONOCRYSTALLINE TUBULAR SEMI-CONDUCTOR OF A MATERIAL OF THE CLASS CONSISTING OF SILICON AND GERMANIUM WHICH COMPRISES INSERTING A CORE OF AN INERT MATERIAL HAVING A THERMAL EXPANSION COEFFICIENT GREATER THAN THE SEMI-CONDUCTOR MATERIAL INTO A SEED CRYSTAL OF THE SEMI-CONDUCTOR MATERIAL, GROWING A CRYSTAL OF THE SEMI-CONDUCTOR MATERIAL ON THE CORE, AND SUBJECTING THE GROWN CRYSTAL AND CORE TO A LOW TEMPERATURE TO FACILITATE REMOVAL OF THE CORE.
US478685A 1954-12-30 1954-12-30 Monocrystalline tubular semiconductor Expired - Lifetime US2890976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US478685A US2890976A (en) 1954-12-30 1954-12-30 Monocrystalline tubular semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US478685A US2890976A (en) 1954-12-30 1954-12-30 Monocrystalline tubular semiconductor

Publications (1)

Publication Number Publication Date
US2890976A true US2890976A (en) 1959-06-16

Family

ID=23900963

Family Applications (1)

Application Number Title Priority Date Filing Date
US478685A Expired - Lifetime US2890976A (en) 1954-12-30 1954-12-30 Monocrystalline tubular semiconductor

Country Status (1)

Country Link
US (1) US2890976A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
DE1154577B (en) * 1960-02-13 1963-09-19 Stanislas Teszner Controlled unipolar semiconductor component with a hollow cylindrical semiconductor body of a conductivity type
US3226269A (en) * 1960-03-31 1965-12-28 Merck & Co Inc Monocrystalline elongate polyhedral semiconductor material
US3245002A (en) * 1962-10-24 1966-04-05 Gen Electric Stimulated emission semiconductor devices
US3341787A (en) * 1962-12-03 1967-09-12 Texas Instruments Inc Laser system with pumping by semiconductor radiant diode
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3925802A (en) * 1973-02-27 1975-12-09 Mitsubishi Electric Corp Semiconductor device
FR2282719A1 (en) * 1974-08-19 1976-03-19 Ibm CIRCUIT SUPPORT
FR2356282A1 (en) * 1975-12-05 1978-01-20 Mobil Tyco Solar Energy Corp PROCESS FOR MANUFACTURING RIBBONS OF SEMI-CONDUCTIVE MATERIAL, IN PARTICULAR FOR THE PRODUCTION OF SOLAR BATTERIES
US4595428A (en) * 1984-01-03 1986-06-17 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body
US4720308A (en) * 1984-01-03 1988-01-19 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby
US5393349A (en) * 1991-08-16 1995-02-28 Tokyo Electron Sagami Kabushiki Kaisha Semiconductor wafer processing apparatus
US6462398B1 (en) * 1998-07-09 2002-10-08 Asahi Kogaku Kogyo Kabushiki Kaisha Semiconductor device and semiconductor assembly apparatus for semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1256930A (en) * 1914-05-16 1918-02-19 Otto Schaller Filament or wire formed of a single crystal.
US1531784A (en) * 1921-12-13 1925-03-31 Cleveland Trust Co Sheet metal
US2142660A (en) * 1934-11-17 1939-01-03 American Platinum Works Platinum crucible
US2703296A (en) * 1950-06-20 1955-03-01 Bell Telephone Labor Inc Method of producing a semiconductor element
US2714183A (en) * 1952-12-29 1955-07-26 Gen Electric Semi-conductor p-n junction units and method of making the same
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1256930A (en) * 1914-05-16 1918-02-19 Otto Schaller Filament or wire formed of a single crystal.
US1531784A (en) * 1921-12-13 1925-03-31 Cleveland Trust Co Sheet metal
US2142660A (en) * 1934-11-17 1939-01-03 American Platinum Works Platinum crucible
US2703296A (en) * 1950-06-20 1955-03-01 Bell Telephone Labor Inc Method of producing a semiconductor element
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2754455A (en) * 1952-11-29 1956-07-10 Rca Corp Power Transistors
US2714183A (en) * 1952-12-29 1955-07-26 Gen Electric Semi-conductor p-n junction units and method of making the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
DE1154577B (en) * 1960-02-13 1963-09-19 Stanislas Teszner Controlled unipolar semiconductor component with a hollow cylindrical semiconductor body of a conductivity type
DE1154577C2 (en) * 1960-02-13 1964-04-23 Stanislas Teszner Controlled unipolar semiconductor component with a hollow cylindrical semiconductor body of a conductivity type
US3226269A (en) * 1960-03-31 1965-12-28 Merck & Co Inc Monocrystalline elongate polyhedral semiconductor material
US3245002A (en) * 1962-10-24 1966-04-05 Gen Electric Stimulated emission semiconductor devices
US3341787A (en) * 1962-12-03 1967-09-12 Texas Instruments Inc Laser system with pumping by semiconductor radiant diode
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3925802A (en) * 1973-02-27 1975-12-09 Mitsubishi Electric Corp Semiconductor device
FR2282719A1 (en) * 1974-08-19 1976-03-19 Ibm CIRCUIT SUPPORT
FR2356282A1 (en) * 1975-12-05 1978-01-20 Mobil Tyco Solar Energy Corp PROCESS FOR MANUFACTURING RIBBONS OF SEMI-CONDUCTIVE MATERIAL, IN PARTICULAR FOR THE PRODUCTION OF SOLAR BATTERIES
US4595428A (en) * 1984-01-03 1986-06-17 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body
US4720308A (en) * 1984-01-03 1988-01-19 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby
US5393349A (en) * 1991-08-16 1995-02-28 Tokyo Electron Sagami Kabushiki Kaisha Semiconductor wafer processing apparatus
US6462398B1 (en) * 1998-07-09 2002-10-08 Asahi Kogaku Kogyo Kabushiki Kaisha Semiconductor device and semiconductor assembly apparatus for semiconductor device

Similar Documents

Publication Publication Date Title
US2890976A (en) Monocrystalline tubular semiconductor
US3093517A (en) Intermetallic semiconductor body formation
US2882468A (en) Semiconducting materials and devices made therefrom
Dubin Formation mechanism of porous silicon layers obtained by anodization of monocrystalline n-type silicon in HF solutions
US3154384A (en) Apparatus for growing compound semiconductor crystal
US3293084A (en) Method of treating semiconductor bodies by ion bombardment
US2776920A (en) Germanium-zinc alloy semi-conductors
US2834697A (en) Process for vapor-solid diffusion of a conductivity-type determining impurity in semiconductors
US3104991A (en) Method of preparing semiconductor material
DE2019655A1 (en) Process for the manufacture of semiconductors and for the manufacture of a doped metallic conductor
US2711379A (en) Method of controlling the concentration of impurities in semi-conducting materials
US3320103A (en) Method of fabricating a semiconductor by out-diffusion
US2762730A (en) Method of making barriers in semiconductors
US3278274A (en) Method of pulling monocrystalline silicon carbide
US3178798A (en) Vapor deposition process wherein the vapor contains both donor and acceptor impurities
US3082126A (en) Producing diffused junctions in silicon carbide
US3762968A (en) Method of forming region of a desired conductivity type in the surface of a semiconductor body
Slichter et al. Impurity effects in the thermal conversion of germanium
US3313663A (en) Intermetallic semiconductor body and method of diffusing an n-type impurity thereinto
US3154446A (en) Method of forming junctions
US3705825A (en) Growth layer of semiconductor compounds produced by melt epitaxy
US2981646A (en) Process of forming barrier layers
US4135952A (en) Process for annealing semiconductor materials
NO137145B (en) STEERING AND / OR PROPULSION DEVICE FOR A VESSEL
US2845370A (en) Semi-conductor crystal rectifiers