NL270516A - - Google Patents

Info

Publication number
NL270516A
NL270516A NL270516DA NL270516A NL 270516 A NL270516 A NL 270516A NL 270516D A NL270516D A NL 270516DA NL 270516 A NL270516 A NL 270516A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL270516A publication Critical patent/NL270516A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate
NL270516D 1960-11-30 NL270516A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES71476A DE1185151B (de) 1960-11-30 1960-11-30 Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten

Publications (1)

Publication Number Publication Date
NL270516A true NL270516A (fr)

Family

ID=7502501

Family Applications (1)

Application Number Title Priority Date Filing Date
NL270516D NL270516A (fr) 1960-11-30

Country Status (5)

Country Link
US (1) US3160521A (fr)
CH (1) CH426745A (fr)
DE (1) DE1185151B (fr)
GB (1) GB939051A (fr)
NL (1) NL270516A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251441B (fr) * 1962-06-20
FR1370724A (fr) * 1963-07-15 1964-08-28 Electronique & Automatisme Sa Procédé de réalisation de couches minces monocristallines
DE1444502B2 (de) * 1963-08-01 1970-01-08 IBM Deutschland Internationale Büro-Maschinen OmbH, 7032 Sindelfingen Verfahren zur Regelung der Schärfe von an Galliumarsenid-Einkristallen zu bildenden pn-übergängen
US3344054A (en) * 1964-03-02 1967-09-26 Schjeldahl Co G T Art of controlling sputtering and metal evaporation by means of a plane acceptor
US3366462A (en) * 1964-11-04 1968-01-30 Siemens Ag Method of producing monocrystalline semiconductor material
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
US3505107A (en) * 1966-01-03 1970-04-07 Texas Instruments Inc Vapor deposition of germanium semiconductor material
USB524765I5 (fr) * 1966-02-03 1900-01-01
US3455745A (en) * 1966-07-08 1969-07-15 Dow Corning Coating of objects with tetraboron silicide
US3900660A (en) * 1972-08-21 1975-08-19 Union Carbide Corp Manufacture of silicon metal from a mixture of chlorosilanes
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
WO1981002948A1 (fr) * 1980-04-10 1981-10-15 Massachusetts Inst Technology Procede de production de feuilles d'un materiau cristallin et dispositifs fabriques a partir de ces feuilles
US4400715A (en) * 1980-11-19 1983-08-23 International Business Machines Corporation Thin film semiconductor device and method for manufacture
US4853076A (en) * 1983-12-29 1989-08-01 Massachusetts Institute Of Technology Semiconductor thin films
DE3404818A1 (de) * 1984-02-10 1985-08-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum erzeugen eines pn- ueberganges in einem nach dem durchlaufverfahren hergestellten siliziumband
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
DE112011100856B4 (de) * 2010-05-31 2015-08-06 International Business Machines Corporation Verfahren und Einheit zur Herstellung eines monokristallinen Blatts

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2902350A (en) * 1954-12-21 1959-09-01 Rca Corp Method for single crystal growth
FR1141561A (fr) * 1956-01-20 1957-09-04 Cedel Procédé et moyens pour la fabrication de matériaux semi-conducteurs
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke

Also Published As

Publication number Publication date
US3160521A (en) 1964-12-08
GB939051A (en) 1963-10-09
DE1185151B (de) 1965-01-14
CH426745A (de) 1966-12-31

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