FR2321326A1 - Procede de fabrication en continu de monocristaux preformes - Google Patents
Procede de fabrication en continu de monocristaux preformesInfo
- Publication number
- FR2321326A1 FR2321326A1 FR7524770A FR7524770A FR2321326A1 FR 2321326 A1 FR2321326 A1 FR 2321326A1 FR 7524770 A FR7524770 A FR 7524770A FR 7524770 A FR7524770 A FR 7524770A FR 2321326 A1 FR2321326 A1 FR 2321326A1
- Authority
- FR
- France
- Prior art keywords
- seed crystal
- prodn
- direct
- al2o3
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7524770A FR2321326A1 (fr) | 1975-08-08 | 1975-08-08 | Procede de fabrication en continu de monocristaux preformes |
DE19762635373 DE2635373C2 (de) | 1975-08-08 | 1976-08-06 | Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form |
JP9407376A JPS5242479A (en) | 1975-08-08 | 1976-08-09 | Continuous fabrication of determineddform single crystals and apparatus therefor |
CH1013876A CH612596A5 (en) | 1975-08-08 | 1976-08-09 | Process for continuous manufacture of preformed single crystals and device for its use |
IT6898476A IT1069679B (it) | 1975-08-08 | 1976-08-09 | Procedimento e dispositivo per la produzione di monocristalli preformati |
GB3310076A GB1546843A (en) | 1975-08-08 | 1976-08-09 | Process for the continuous preparation of preformed monocrystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7524770A FR2321326A1 (fr) | 1975-08-08 | 1975-08-08 | Procede de fabrication en continu de monocristaux preformes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2321326A1 true FR2321326A1 (fr) | 1977-03-18 |
FR2321326B1 FR2321326B1 (fr) | 1981-02-13 |
Family
ID=9158931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7524770A Granted FR2321326A1 (fr) | 1975-08-08 | 1975-08-08 | Procede de fabrication en continu de monocristaux preformes |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2321326A1 (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2837775A1 (de) * | 1977-08-31 | 1979-03-08 | Ugine Kuhlmann | Verfahren zum kontinuierlichen aufbringen von kristallinem silicium in form eines duennen films auf ein graphitiertes substrat |
US4495155A (en) * | 1982-06-11 | 1985-01-22 | Circeram | Modified crucible for the pendant drop method of crystallization |
EP1132503A2 (fr) * | 2000-03-03 | 2001-09-12 | Ngk Insulators, Ltd. | Procédé et appareillage pour la production des monocristaux d'oxydes |
EP1138808A1 (fr) * | 2000-03-09 | 2001-10-04 | Ngk Insulators, Ltd. | Procédé pour la production d'un corps plan composé d'un oxyde monocristallin |
EP1143041A1 (fr) * | 2000-03-09 | 2001-10-10 | Ngk Insulators, Ltd. | Procédé pour la production d'un corps plan composé d'oxyde monocristallin |
EP1666644A1 (fr) * | 2003-07-17 | 2006-06-07 | Stella Chemifa Kabushiki Kaisha | Procede d'obtention d'un cristal de fluorure |
ITMI20120328A1 (it) * | 2012-03-02 | 2013-09-03 | Infn Istituto Naz Di Fisica Nucleare | Procedimento di realizzazione di fibre cristalline |
-
1975
- 1975-08-08 FR FR7524770A patent/FR2321326A1/fr active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2837775A1 (de) * | 1977-08-31 | 1979-03-08 | Ugine Kuhlmann | Verfahren zum kontinuierlichen aufbringen von kristallinem silicium in form eines duennen films auf ein graphitiertes substrat |
US4495155A (en) * | 1982-06-11 | 1985-01-22 | Circeram | Modified crucible for the pendant drop method of crystallization |
EP1132503A2 (fr) * | 2000-03-03 | 2001-09-12 | Ngk Insulators, Ltd. | Procédé et appareillage pour la production des monocristaux d'oxydes |
EP1132503A3 (fr) * | 2000-03-03 | 2004-04-21 | Ngk Insulators, Ltd. | Procédé et appareillage pour la production des monocristaux d'oxydes |
EP1138808A1 (fr) * | 2000-03-09 | 2001-10-04 | Ngk Insulators, Ltd. | Procédé pour la production d'un corps plan composé d'un oxyde monocristallin |
EP1143041A1 (fr) * | 2000-03-09 | 2001-10-10 | Ngk Insulators, Ltd. | Procédé pour la production d'un corps plan composé d'oxyde monocristallin |
US6451110B2 (en) | 2000-03-09 | 2002-09-17 | Ngk Insulators, Ltd. | Process for producing a planar body of an oxide single crystal |
US6527851B2 (en) | 2000-03-09 | 2003-03-04 | Ngk Insulators, Ltd. | Process for producing a planar body of an oxide single crystal |
EP1666644A1 (fr) * | 2003-07-17 | 2006-06-07 | Stella Chemifa Kabushiki Kaisha | Procede d'obtention d'un cristal de fluorure |
EP1666644A4 (fr) * | 2003-07-17 | 2009-05-20 | Stella Chemifa Kk | Procede d'obtention d'un cristal de fluorure |
ITMI20120328A1 (it) * | 2012-03-02 | 2013-09-03 | Infn Istituto Naz Di Fisica Nucleare | Procedimento di realizzazione di fibre cristalline |
Also Published As
Publication number | Publication date |
---|---|
FR2321326B1 (fr) | 1981-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1213867A (en) | Method of manufacturing silicon carbide single crystal filaments | |
US2992903A (en) | Apparatus for growing thin crystals | |
GB1319893A (en) | Apparatus for growing crystalline bodies from the melt | |
FR2321326A1 (fr) | Procede de fabrication en continu de monocristaux preformes | |
GB1528897A (en) | Method of purifying silicon | |
GB1286024A (en) | Method of producing single semiconductor crystals | |
JPS5685822A (en) | Method of growing polycrystalline silicon layer on substrate from molten silicon source | |
FR2359639A2 (fr) | Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins | |
US3998668A (en) | Aluminum metaphosphate dopant sources | |
US3130040A (en) | Dendritic seed crystals having a critical spacing between three interior twin planes | |
US3261722A (en) | Process for preparing semiconductor ingots within a depression | |
GB1229508A (fr) | ||
CH612596A5 (en) | Process for continuous manufacture of preformed single crystals and device for its use | |
US3092462A (en) | Method for the manufacture of rods of meltable material | |
US3093520A (en) | Semiconductor dendritic crystals | |
GB1468106A (en) | Method and apparatus for crystal growth | |
US3669763A (en) | Traveling solvent method of growing silicon carbide crystals and junctions utilizing yttrium as the solvent | |
ES365930A1 (es) | Un metodo de fabricar cristales, particularmente cristales filamentosos. | |
GB769426A (en) | Improvements relating to the manufacture of crystalline material | |
US3671203A (en) | Method and apparatus for czochralski growth of large crystals | |
JPS5252570A (en) | Device for production of compound semiconductor | |
GB1315298A (en) | Growing crystals on a substrate | |
JPS6445118A (en) | Solid-phase diffusion of boron | |
JPS5696883A (en) | Manufacture of silicon carbide diode | |
SU1633032A1 (ru) | Способ получени полупроводниковых гетероструктур |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |