GB1315298A - Growing crystals on a substrate - Google Patents
Growing crystals on a substrateInfo
- Publication number
- GB1315298A GB1315298A GB2403371*A GB2403371A GB1315298A GB 1315298 A GB1315298 A GB 1315298A GB 2403371 A GB2403371 A GB 2403371A GB 1315298 A GB1315298 A GB 1315298A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- melt
- crucible
- plate
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/08—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1315298 Crystallizing from a melt WESTERN ELECTRIC CO Inc 19 April 1971 [16 March 1970] 24033/71 Headings B1G and B1S In order to improve crystal growth, e.g. of an epitaxial layer of Ga P from a solution in a mixture of Ga, Ga 2 O 3 and Zn, on the surface 73 of a substrate 64, the substrate is shielded from impurities, by a cover plate 72, which is held down over it, while the melt is being heated and only raised at the crystal growing temperature. During crystal growth a heat sink 79, through which cooling gas may be passed, maintains a vertical temperature gradient in crucible 61, having horizontal isotherms, so that a uniform crystal layer is produced. When the desired thickness has been reached growth may be stopped by returning the plate 72 on tilting the furnace 74, thereby tipping the melt off the substrate. Confining the substrate in a closely fitting recess (62) out of contact with the melt, is stated to limit thermal degradation (by volatilization of an element) to one monolayer of the surface 73. This effect may be enhanced by making plate 72 of the same material as the substrate, whereby it also serves to maintain saturation of the melt. Alternatively, it may be made of an inert material, which may be the same as that from which the crucible 61 is made, e.g. pure graphite, alumina, quartz, boronitride or an inert ceramic material.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1992970A | 1970-03-16 | 1970-03-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1315298A true GB1315298A (en) | 1973-05-02 |
Family
ID=21795814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2403371*A Expired GB1315298A (en) | 1970-03-16 | 1971-04-19 | Growing crystals on a substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3648654A (en) |
| JP (1) | JPS528796B1 (en) |
| BE (1) | BE764314A (en) |
| DE (1) | DE2111946C3 (en) |
| FR (1) | FR2084643A5 (en) |
| GB (1) | GB1315298A (en) |
| NL (1) | NL144496B (en) |
| SE (1) | SE377054B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3036317A1 (en) * | 1980-09-26 | 1982-05-19 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Liquid phase epitaxy appts. for mfg. semiconductor devices - where molten phase flows from cup shaped vessel into cell contg. substrates |
| JPS58148426A (en) * | 1982-03-01 | 1983-09-03 | Semiconductor Res Found | Growth device |
| JP2001160540A (en) * | 1999-09-22 | 2001-06-12 | Canon Inc | Producing device for semiconductor device, liquid phase growing method, liquid phase growing device and solar battery |
| JP4827107B2 (en) * | 2006-03-24 | 2011-11-30 | 日本碍子株式会社 | Method for producing nitride single crystal |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1422545A (en) * | 1920-06-01 | 1922-07-11 | Ernest L Dayton | Coating apparatus |
| US3206322A (en) * | 1960-10-31 | 1965-09-14 | Morgan John Robert | Vacuum deposition means and methods for manufacture of electronic components |
| BE624740A (en) * | 1961-11-15 | |||
| DE1287047B (en) * | 1965-02-18 | 1969-01-16 | Siemens Ag | Method and device for depositing a monocrystalline semiconductor layer |
| US3491720A (en) * | 1965-07-29 | 1970-01-27 | Monsanto Co | Epitaxial deposition reactor |
| US3382843A (en) * | 1965-10-23 | 1968-05-14 | Optical Coating Laboratory Inc | Vacuum coating apparatus utilizing rotating sources |
| US3524426A (en) * | 1968-02-29 | 1970-08-18 | Libbey Owens Ford Glass Co | Apparatus for coating by thermal evaporation |
| US3551219A (en) * | 1968-05-09 | 1970-12-29 | Bell Telephone Labor Inc | Epitaxial growth technique |
| US3560276A (en) * | 1968-12-23 | 1971-02-02 | Bell Telephone Labor Inc | Technique for fabrication of multilayered semiconductor structure |
| US3565702A (en) * | 1969-02-14 | 1971-02-23 | Rca Corp | Depositing successive epitaxial semiconductive layers from the liquid phase |
-
1970
- 1970-03-16 US US19929A patent/US3648654A/en not_active Expired - Lifetime
-
1971
- 1971-03-05 SE SE7102846A patent/SE377054B/xx unknown
- 1971-03-12 DE DE2111946A patent/DE2111946C3/en not_active Expired
- 1971-03-15 NL NL717103418A patent/NL144496B/en not_active IP Right Cessation
- 1971-03-15 FR FR7109005A patent/FR2084643A5/fr not_active Expired
- 1971-03-16 BE BE764314A patent/BE764314A/en not_active IP Right Cessation
- 1971-03-16 JP JP46014124A patent/JPS528796B1/ja active Pending
- 1971-04-19 GB GB2403371*A patent/GB1315298A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE377054B (en) | 1975-06-23 |
| DE2111946C3 (en) | 1974-03-07 |
| NL144496B (en) | 1975-01-15 |
| DE2111946A1 (en) | 1971-09-30 |
| US3648654A (en) | 1972-03-14 |
| NL7103418A (en) | 1971-09-20 |
| JPS528796B1 (en) | 1977-03-11 |
| DE2111946B2 (en) | 1973-08-02 |
| BE764314A (en) | 1971-09-16 |
| FR2084643A5 (en) | 1971-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3634149A (en) | Method of manufacturing aluminium nitride crystals for semiconductor devices | |
| Bouchard | The preparation of single crystals of FeS2, CoS2, and NiS2 pyrites by chlorine transport | |
| US3031275A (en) | Process for growing single crystals | |
| GB1345367A (en) | Growing crystals upon a substrate | |
| Korczak et al. | Liquid encapsulated Czochralski growth of silver thiogallate | |
| GB1311028A (en) | Producing monocrystals | |
| CA1080588A (en) | Method of forming and growing a single crystal of a semiconductor compound | |
| JPH07172998A (en) | Production of single crystal of silicon carbide | |
| GB1315298A (en) | Growing crystals on a substrate | |
| US3234135A (en) | Growth of beryl crystals | |
| US3607752A (en) | Process for the culture of large monocrystals of lithium niobate | |
| US3811963A (en) | Method of epitaxially depositing gallium nitride from the liquid phase | |
| JPH11147785A (en) | Production of single crystal | |
| JPH0645519B2 (en) | Method for growing p-type SiC single crystal | |
| KR20010032297A (en) | Charge for vertical boat growth process and use thereof | |
| GB1498459A (en) | Growing semiconductor epitaxial films | |
| GB1490114A (en) | Growing crystals from a melt | |
| JP2612897B2 (en) | Single crystal growing equipment | |
| Peigen et al. | A modified horizontal gradient-freeze technique for growth of dislocation-free Si-doped GaAs single crystals | |
| Gutknecht et al. | Growth of lead sulfide single crystals by the bridgman method | |
| JP2830306B2 (en) | Compound semiconductor crystal manufacturing equipment | |
| JPH0527500Y2 (en) | ||
| JPH0316988A (en) | Production device of single crystal of compound semiconductor | |
| JPS55140800A (en) | Crucible for crystal growing crucible device | |
| JPH08109094A (en) | Production of compound semiconductor single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |