SE377054B - - Google Patents

Info

Publication number
SE377054B
SE377054B SE7102846A SE284671A SE377054B SE 377054 B SE377054 B SE 377054B SE 7102846 A SE7102846 A SE 7102846A SE 284671 A SE284671 A SE 284671A SE 377054 B SE377054 B SE 377054B
Authority
SE
Sweden
Application number
SE7102846A
Inventor
A A Bergh
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE377054B publication Critical patent/SE377054B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE7102846A 1970-03-16 1971-03-05 SE377054B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1992970A 1970-03-16 1970-03-16

Publications (1)

Publication Number Publication Date
SE377054B true SE377054B (en) 1975-06-23

Family

ID=21795814

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7102846A SE377054B (en) 1970-03-16 1971-03-05

Country Status (8)

Country Link
US (1) US3648654A (en)
JP (1) JPS528796B1 (en)
BE (1) BE764314A (en)
DE (1) DE2111946C3 (en)
FR (1) FR2084643A5 (en)
GB (1) GB1315298A (en)
NL (1) NL144496B (en)
SE (1) SE377054B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036317A1 (en) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Liquid phase epitaxy appts. for mfg. semiconductor devices - where molten phase flows from cup shaped vessel into cell contg. substrates
JPS58148426A (en) * 1982-03-01 1983-09-03 Semiconductor Res Found Growth device
JP2001160540A (en) * 1999-09-22 2001-06-12 Canon Inc Producing device for semiconductor device, liquid phase growing method, liquid phase growing device and solar battery
JP4827107B2 (en) * 2006-03-24 2011-11-30 日本碍子株式会社 Method for producing nitride single crystal

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1422545A (en) * 1920-06-01 1922-07-11 Ernest L Dayton Coating apparatus
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
BE624740A (en) * 1961-11-15
DE1287047B (en) * 1965-02-18 1969-01-16 Siemens Ag Method and device for depositing a monocrystalline semiconductor layer
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
US3382843A (en) * 1965-10-23 1968-05-14 Optical Coating Laboratory Inc Vacuum coating apparatus utilizing rotating sources
US3524426A (en) * 1968-02-29 1970-08-18 Libbey Owens Ford Glass Co Apparatus for coating by thermal evaporation
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase

Also Published As

Publication number Publication date
DE2111946C3 (en) 1974-03-07
FR2084643A5 (en) 1971-12-17
NL144496B (en) 1975-01-15
BE764314A (en) 1971-09-16
DE2111946A1 (en) 1971-09-30
GB1315298A (en) 1973-05-02
JPS528796B1 (en) 1977-03-11
DE2111946B2 (en) 1973-08-02
US3648654A (en) 1972-03-14
NL7103418A (en) 1971-09-20

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