JPS528796B1 - - Google Patents

Info

Publication number
JPS528796B1
JPS528796B1 JP46014124A JP1412471A JPS528796B1 JP S528796 B1 JPS528796 B1 JP S528796B1 JP 46014124 A JP46014124 A JP 46014124A JP 1412471 A JP1412471 A JP 1412471A JP S528796 B1 JPS528796 B1 JP S528796B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46014124A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS528796B1 publication Critical patent/JPS528796B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP46014124A 1970-03-16 1971-03-16 Pending JPS528796B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1992970A 1970-03-16 1970-03-16

Publications (1)

Publication Number Publication Date
JPS528796B1 true JPS528796B1 (en) 1977-03-11

Family

ID=21795814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46014124A Pending JPS528796B1 (en) 1970-03-16 1971-03-16

Country Status (8)

Country Link
US (1) US3648654A (en)
JP (1) JPS528796B1 (en)
BE (1) BE764314A (en)
DE (1) DE2111946C3 (en)
FR (1) FR2084643A5 (en)
GB (1) GB1315298A (en)
NL (1) NL144496B (en)
SE (1) SE377054B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3036317A1 (en) * 1980-09-26 1982-05-19 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Liquid phase epitaxy appts. for mfg. semiconductor devices - where molten phase flows from cup shaped vessel into cell contg. substrates
JPS58148426A (en) * 1982-03-01 1983-09-03 Semiconductor Res Found Growth device
JP2001160540A (en) * 1999-09-22 2001-06-12 Canon Inc Producing device for semiconductor device, liquid phase growing method, liquid phase growing device and solar battery
JP4827107B2 (en) * 2006-03-24 2011-11-30 日本碍子株式会社 Method for producing nitride single crystal

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1422545A (en) * 1920-06-01 1922-07-11 Ernest L Dayton Coating apparatus
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
BE624740A (en) * 1961-11-15
DE1287047B (en) * 1965-02-18 1969-01-16 Siemens Ag Method and device for depositing a monocrystalline semiconductor layer
US3491720A (en) * 1965-07-29 1970-01-27 Monsanto Co Epitaxial deposition reactor
US3382843A (en) * 1965-10-23 1968-05-14 Optical Coating Laboratory Inc Vacuum coating apparatus utilizing rotating sources
US3524426A (en) * 1968-02-29 1970-08-18 Libbey Owens Ford Glass Co Apparatus for coating by thermal evaporation
US3551219A (en) * 1968-05-09 1970-12-29 Bell Telephone Labor Inc Epitaxial growth technique
US3560276A (en) * 1968-12-23 1971-02-02 Bell Telephone Labor Inc Technique for fabrication of multilayered semiconductor structure
US3565702A (en) * 1969-02-14 1971-02-23 Rca Corp Depositing successive epitaxial semiconductive layers from the liquid phase

Also Published As

Publication number Publication date
DE2111946C3 (en) 1974-03-07
FR2084643A5 (en) 1971-12-17
NL144496B (en) 1975-01-15
BE764314A (en) 1971-09-16
DE2111946A1 (en) 1971-09-30
GB1315298A (en) 1973-05-02
DE2111946B2 (en) 1973-08-02
US3648654A (en) 1972-03-14
NL7103418A (en) 1971-09-20
SE377054B (en) 1975-06-23

Similar Documents

Publication Publication Date Title
AR204384A1 (en)
FR2084643A5 (en)
ATA96471A (en)
AU2044470A (en)
AU1146470A (en)
AU1473870A (en)
AU1326870A (en)
AU2017870A (en)
AU1833270A (en)
AU1716970A (en)
AU2085370A (en)
AU1517670A (en)
AU1336970A (en)
AU1591370A (en)
AU1872870A (en)
AU1328670A (en)
AU1247570A (en)
AU1343870A (en)
AU1235770A (en)
AU2131570A (en)
AU2130770A (en)
AU2130570A (en)
AU2144270A (en)
AU1581370A (en)
AU1086670A (en)