GB1311028A - Producing monocrystals - Google Patents

Producing monocrystals

Info

Publication number
GB1311028A
GB1311028A GB5603170A GB5603170A GB1311028A GB 1311028 A GB1311028 A GB 1311028A GB 5603170 A GB5603170 A GB 5603170A GB 5603170 A GB5603170 A GB 5603170A GB 1311028 A GB1311028 A GB 1311028A
Authority
GB
United Kingdom
Prior art keywords
melt
crystal
cooling
flat
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5603170A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1311028A publication Critical patent/GB1311028A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1311028 Crystal pulling INTERNATIONAL BUSINESS MACHINES CORP 25 Nov 1970 [5 Dec 1969] 56031/70 Heading BIS In order to grow a crystal, by the Czochralski method, on a flat crystallization front, thereby minimising crystallographic defects, the temperature distribution in the melt is arranged, so that the isothermal surface on which the front lies is flat and very near the surface of the melt. In these conditions, the rate of growth can be greatly increased, by cooling the upper part of the crystal and a silicon crystal of 2¢ ins. diameter can be obtained, with an acceptably low crystallographic defect density and greater than normal length, by directing a larger proportion of the applied heat to the upper portion and surface of the melt, while cooling the lower portion of the melt. Conventional apparatus is thus modified by increasing the thickness of the graphite insulation at the top 95 and reducing it at the bottom 97, providing a molybdenum shield 100 and a pyrolytic graphite ring 101, allowing heat to pass freely from the base of crucible 72 and by providing water-cooling jackets 96, 102 and 84.
GB5603170A 1969-12-05 1970-11-25 Producing monocrystals Expired GB1311028A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88257169A 1969-12-05 1969-12-05

Publications (1)

Publication Number Publication Date
GB1311028A true GB1311028A (en) 1973-03-21

Family

ID=25380873

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5603170A Expired GB1311028A (en) 1969-12-05 1970-11-25 Producing monocrystals

Country Status (6)

Country Link
US (1) US3798007A (en)
JP (1) JPS5341115B1 (en)
CA (1) CA935744A (en)
DE (1) DE2059713A1 (en)
FR (1) FR2071776A5 (en)
GB (1) GB1311028A (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1475261A (en) * 1975-04-02 1977-06-01 Nat Res Dev Siliceous materials
US4238274A (en) * 1978-07-17 1980-12-09 Western Electric Company, Inc. Method for avoiding undesirable deposits in crystal growing operations
US4224099A (en) * 1978-08-10 1980-09-23 Union Carbide Corporation Method for producing R-plane single crystal alpha alumina
US4549345A (en) * 1981-11-19 1985-10-29 Wilsey Harvey J Method of making a graphite zig-zag picket heater
US4410796A (en) * 1981-11-19 1983-10-18 Ultra Carbon Corporation Segmented heater assembly
JPS6144797A (en) * 1984-08-10 1986-03-04 Toshiba Corp Apparatus for growing single crystal and method for controlling same
US4755658A (en) * 1985-11-12 1988-07-05 Ultra Carbon Corporation Segmented heater system
US4703556A (en) * 1985-11-12 1987-11-03 Ultra Carbon Corporation Method of making a segmented heater system
US4971652A (en) * 1989-12-18 1990-11-20 General Electric Company Method and apparatus for crystal growth control
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
US5414927A (en) * 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets
US5360599A (en) * 1993-06-21 1994-11-01 General Electric Company Crucible support heater for the control of melt flow pattern in a crystal growth process
US5394830A (en) * 1993-08-27 1995-03-07 General Electric Company Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process
US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
JP4151474B2 (en) * 2003-05-13 2008-09-17 信越半導体株式会社 Method for producing single crystal and single crystal
DE102006002682A1 (en) * 2006-01-19 2007-08-02 Siltronic Ag Apparatus and method for producing a single crystal, single crystal and semiconductor wafer
US20070188717A1 (en) * 2006-02-14 2007-08-16 Melcher Charles L Method for producing crystal elements having strategically oriented faces for enhancing performance
TW201012988A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Gas recirculation heat exchanger for casting silicon
MY168651A (en) * 2010-11-22 2018-11-28 Toyo Tanso Co Single crystal pulling apparatus and low heat conductive member used for single crystal pulling apparatus
US9464364B2 (en) * 2011-11-09 2016-10-11 Varian Semiconductor Equipment Associates, Inc. Thermal load leveling during silicon crystal growth from a melt using anisotropic materials
US9896778B2 (en) * 2013-05-31 2018-02-20 Toyota Jidosha Kabushiki Kaisha Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
FR1316707A (en) * 1961-12-22 1963-02-01 Radiotechnique Improvements to devices for obtaining single crystals by pulling
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
NL301284A (en) * 1962-12-10
US3291571A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Crystal growth
US3291574A (en) * 1963-12-23 1966-12-13 Gen Motors Corp Semiconductor crystal growth from a domical projection
US3298795A (en) * 1964-03-23 1967-01-17 Westinghouse Electric Corp Process for controlling dendritic crystal growth
US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
US3359077A (en) * 1964-05-25 1967-12-19 Globe Union Inc Method of growing a crystal
BE676042A (en) * 1965-02-10 1966-06-16
US3511610A (en) * 1966-10-14 1970-05-12 Gen Motors Corp Silicon crystal growing
US3551115A (en) * 1968-05-22 1970-12-29 Ibm Apparatus for growing single crystals

Also Published As

Publication number Publication date
DE2059713A1 (en) 1971-06-09
JPS5341115B1 (en) 1978-10-31
FR2071776A5 (en) 1971-09-17
CA935744A (en) 1973-10-23
US3798007A (en) 1974-03-19

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee