FR2071776A5 - - Google Patents
Info
- Publication number
- FR2071776A5 FR2071776A5 FR7037333A FR7037333A FR2071776A5 FR 2071776 A5 FR2071776 A5 FR 2071776A5 FR 7037333 A FR7037333 A FR 7037333A FR 7037333 A FR7037333 A FR 7037333A FR 2071776 A5 FR2071776 A5 FR 2071776A5
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88257169A | 1969-12-05 | 1969-12-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2071776A5 true FR2071776A5 (fr) | 1971-09-17 |
Family
ID=25380873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7037333A Expired FR2071776A5 (fr) | 1969-12-05 | 1970-10-06 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3798007A (fr) |
JP (1) | JPS5341115B1 (fr) |
CA (1) | CA935744A (fr) |
DE (1) | DE2059713A1 (fr) |
FR (1) | FR2071776A5 (fr) |
GB (1) | GB1311028A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2644755A1 (fr) * | 2010-11-22 | 2013-10-02 | Toyo Tanso Co., Ltd. | Dispositif de tirage de monocristaux et élément faiblement conducteur de chaleur à utiliser dans un dispositif de tirage de monocristaux |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1475261A (en) * | 1975-04-02 | 1977-06-01 | Nat Res Dev | Siliceous materials |
US4238274A (en) * | 1978-07-17 | 1980-12-09 | Western Electric Company, Inc. | Method for avoiding undesirable deposits in crystal growing operations |
US4224099A (en) * | 1978-08-10 | 1980-09-23 | Union Carbide Corporation | Method for producing R-plane single crystal alpha alumina |
US4410796A (en) * | 1981-11-19 | 1983-10-18 | Ultra Carbon Corporation | Segmented heater assembly |
US4549345A (en) * | 1981-11-19 | 1985-10-29 | Wilsey Harvey J | Method of making a graphite zig-zag picket heater |
JPS6144797A (ja) * | 1984-08-10 | 1986-03-04 | Toshiba Corp | 単結晶育成装置およびその制御方法 |
US4755658A (en) * | 1985-11-12 | 1988-07-05 | Ultra Carbon Corporation | Segmented heater system |
US4703556A (en) * | 1985-11-12 | 1987-11-03 | Ultra Carbon Corporation | Method of making a segmented heater system |
US4971652A (en) * | 1989-12-18 | 1990-11-20 | General Electric Company | Method and apparatus for crystal growth control |
DE4204777A1 (de) * | 1991-02-20 | 1992-10-08 | Sumitomo Metal Ind | Vorrichtung und verfahren zum zuechten von einkristallen |
US5414927A (en) * | 1993-03-30 | 1995-05-16 | Union Oil Co | Furnace elements made from graphite sheets |
US5360599A (en) * | 1993-06-21 | 1994-11-01 | General Electric Company | Crucible support heater for the control of melt flow pattern in a crystal growth process |
US5394830A (en) * | 1993-08-27 | 1995-03-07 | General Electric Company | Apparatus and method for growing long single crystals in a liquid encapsulated Czochralski process |
US5487355A (en) * | 1995-03-03 | 1996-01-30 | Motorola, Inc. | Semiconductor crystal growth method |
US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
US5935321A (en) * | 1997-08-01 | 1999-08-10 | Motorola, Inc. | Single crystal ingot and method for growing the same |
JP4151474B2 (ja) * | 2003-05-13 | 2008-09-17 | 信越半導体株式会社 | 単結晶の製造方法及び単結晶 |
DE102006002682A1 (de) * | 2006-01-19 | 2007-08-02 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls, Einkristall und Halbleiterscheibe |
US20070188717A1 (en) * | 2006-02-14 | 2007-08-16 | Melcher Charles L | Method for producing crystal elements having strategically oriented faces for enhancing performance |
TW201012988A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Gas recirculation heat exchanger for casting silicon |
US9464364B2 (en) * | 2011-11-09 | 2016-10-11 | Varian Semiconductor Equipment Associates, Inc. | Thermal load leveling during silicon crystal growth from a melt using anisotropic materials |
JP6062045B2 (ja) * | 2013-05-31 | 2017-01-18 | 新日鐵住金株式会社 | SiC単結晶の製造装置及び当該製造装置を用いるSiC単結晶の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3173765A (en) * | 1955-03-18 | 1965-03-16 | Itt | Method of making crystalline silicon semiconductor material |
US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
US2879189A (en) * | 1956-11-21 | 1959-03-24 | Shockley William | Method for growing junction semi-conductive devices |
US2890139A (en) * | 1956-12-10 | 1959-06-09 | Shockley William | Semi-conductive material purification method and apparatus |
FR1316707A (fr) * | 1961-12-22 | 1963-02-01 | Radiotechnique | Perfectionnements aux dispositifs d'obtention de monocristaux par tirage |
US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
NL301284A (fr) * | 1962-12-10 | |||
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3291574A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Semiconductor crystal growth from a domical projection |
US3298795A (en) * | 1964-03-23 | 1967-01-17 | Westinghouse Electric Corp | Process for controlling dendritic crystal growth |
US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
US3359077A (en) * | 1964-05-25 | 1967-12-19 | Globe Union Inc | Method of growing a crystal |
BE676042A (fr) * | 1965-02-10 | 1966-06-16 | ||
US3511610A (en) * | 1966-10-14 | 1970-05-12 | Gen Motors Corp | Silicon crystal growing |
US3551115A (en) * | 1968-05-22 | 1970-12-29 | Ibm | Apparatus for growing single crystals |
-
1969
- 1969-12-05 US US00882571A patent/US3798007A/en not_active Expired - Lifetime
-
1970
- 1970-10-06 FR FR7037333A patent/FR2071776A5/fr not_active Expired
- 1970-11-13 JP JP9953970A patent/JPS5341115B1/ja active Pending
- 1970-11-25 GB GB5603170A patent/GB1311028A/en not_active Expired
- 1970-12-03 CA CA099713A patent/CA935744A/en not_active Expired
- 1970-12-04 DE DE19702059713 patent/DE2059713A1/de active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2644755A1 (fr) * | 2010-11-22 | 2013-10-02 | Toyo Tanso Co., Ltd. | Dispositif de tirage de monocristaux et élément faiblement conducteur de chaleur à utiliser dans un dispositif de tirage de monocristaux |
EP2644755A4 (fr) * | 2010-11-22 | 2014-05-14 | Toyo Tanso Co | Dispositif de tirage de monocristaux et élément faiblement conducteur de chaleur à utiliser dans un dispositif de tirage de monocristaux |
US9453291B2 (en) | 2010-11-22 | 2016-09-27 | Toyo Tanso Co., Ltd. | Single crystal pulling apparatus and low heat conductive member used for single crystal pulling apparatus |
Also Published As
Publication number | Publication date |
---|---|
GB1311028A (en) | 1973-03-21 |
CA935744A (en) | 1973-10-23 |
DE2059713A1 (de) | 1971-06-09 |
US3798007A (en) | 1974-03-19 |
JPS5341115B1 (fr) | 1978-10-31 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |