JPS5242479A - Continuous fabrication of determineddform single crystals and apparatus therefor - Google Patents

Continuous fabrication of determineddform single crystals and apparatus therefor

Info

Publication number
JPS5242479A
JPS5242479A JP9407376A JP9407376A JPS5242479A JP S5242479 A JPS5242479 A JP S5242479A JP 9407376 A JP9407376 A JP 9407376A JP 9407376 A JP9407376 A JP 9407376A JP S5242479 A JPS5242479 A JP S5242479A
Authority
JP
Japan
Prior art keywords
determineddform
single crystals
apparatus therefor
continuous fabrication
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9407376A
Other languages
Japanese (ja)
Other versions
JPS546510B2 (en
Inventor
Rikaru Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ugine Kuhlmann SA
Original Assignee
Ugine Kuhlmann SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7524770A external-priority patent/FR2321326A1/en
Priority claimed from FR7622863A external-priority patent/FR2359639A2/en
Application filed by Ugine Kuhlmann SA filed Critical Ugine Kuhlmann SA
Publication of JPS5242479A publication Critical patent/JPS5242479A/en
Publication of JPS546510B2 publication Critical patent/JPS546510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9407376A 1975-08-08 1976-08-09 Continuous fabrication of determineddform single crystals and apparatus therefor Granted JPS5242479A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7524770A FR2321326A1 (en) 1975-08-08 1975-08-08 Direct prodn. of monocrystal wafers - using seed crystal and drawing die with rectangular opening
FR7622863A FR2359639A2 (en) 1976-07-27 1976-07-27 Direct prodn. of monocrystal wafers - using seed crystal and drawing die with rectangular opening

Publications (2)

Publication Number Publication Date
JPS5242479A true JPS5242479A (en) 1977-04-02
JPS546510B2 JPS546510B2 (en) 1979-03-29

Family

ID=26219025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9407376A Granted JPS5242479A (en) 1975-08-08 1976-08-09 Continuous fabrication of determineddform single crystals and apparatus therefor

Country Status (5)

Country Link
JP (1) JPS5242479A (en)
CH (1) CH612596A5 (en)
DE (1) DE2635373C2 (en)
GB (1) GB1546843A (en)
IT (1) IT1069679B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010105876A (en) * 2008-10-31 2010-05-13 Tdk Corp Single crystal pulling-down apparatus
JP4738174B2 (en) * 2003-07-17 2011-08-03 ステラケミファ株式会社 Method for producing fluoride crystals
JP2021172796A (en) * 2020-04-30 2021-11-01 Tdk株式会社 Single crystal phosphor, and production method of crystal
JP2021172575A (en) * 2020-04-30 2021-11-01 Tdk株式会社 Crucible and crystal production apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528454A1 (en) * 1982-06-11 1983-12-16 Criceram MODIFIED CREUSET FOR THE METHOD OF CRYSTALLIZATION BY PENDING DROP
DE4323793A1 (en) * 1993-07-15 1995-01-19 Wacker Chemitronic Process for the production of rods or blocks from semiconductor material which expands on solidification by crystallizing a melt produced from granules, and device for carrying it out
DE4423720C1 (en) * 1994-07-08 1996-02-01 Heraeus Electro Nite Int Surface tension measurement esp. in molten metal
ATE156264T1 (en) * 1994-07-08 1997-08-15 Heraeus Electro Nite Int DEVICE FOR MEASURING SURFACE TENSION
US7691199B2 (en) 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1134967B (en) * 1954-03-02 1962-08-23 Siemens Ag Method for drawing a rod-shaped crystalline semiconductor body
DE1204837B (en) * 1961-08-21 1965-11-11 Merck & Co Inc Process for the continuous production of rods from thermoelectric materials
US3249404A (en) * 1963-02-20 1966-05-03 Merck & Co Inc Continuous growth of crystalline materials
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3801309A (en) * 1971-11-08 1974-04-02 Tyco Laboratories Inc Production of eutectic bodies by unidirectional solidification

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113568A (en) * 1974-07-24 1976-02-03 Hitachi Ltd Handotaiketsushono seizohohooyobi seizosochi

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738174B2 (en) * 2003-07-17 2011-08-03 ステラケミファ株式会社 Method for producing fluoride crystals
JP2010105876A (en) * 2008-10-31 2010-05-13 Tdk Corp Single crystal pulling-down apparatus
JP2021172796A (en) * 2020-04-30 2021-11-01 Tdk株式会社 Single crystal phosphor, and production method of crystal
JP2021172575A (en) * 2020-04-30 2021-11-01 Tdk株式会社 Crucible and crystal production apparatus

Also Published As

Publication number Publication date
GB1546843A (en) 1979-05-31
DE2635373C2 (en) 1982-04-15
IT1069679B (en) 1985-03-25
CH612596A5 (en) 1979-08-15
JPS546510B2 (en) 1979-03-29
DE2635373A1 (en) 1977-04-21

Similar Documents

Publication Publication Date Title
JPS51117199A (en) Method of making single crystal
ZA757846B (en) Novel silicon crystals and method of producing same
JPS5252185A (en) Pullluppgrowth of silicone crystals
GB1542940A (en) Dihydroimidazopyridinones and derivatives of such compounds
JPS5264496A (en) Method of increasing bulk of cut tobacoo and apparatus therefor
ZA76460B (en) Substituted benzodiazepin-10-ones and method of use
JPS51149181A (en) Pullluppgrowth of single crystal materials
ZA764667B (en) Slide fastening element and apparatus and method of manufacture
JPS5242479A (en) Continuous fabrication of determineddform single crystals and apparatus therefor
JPS51117200A (en) Alkaliibetaaalumina material and method of producing same
EG12225A (en) Protective material made of crystals
JPS528929A (en) Continuous casting and apparatus thereof
JPS51151299A (en) Method of making single crystal galliumnitride
JPS5270939A (en) Method of continuous casting and its apparatus
IL52320A0 (en) P-isobutzyl hydratropate of guyiycol and process for its preparation
PH12074A (en) Diarylbutanolamines and method of use thereof
JPS5266824A (en) Apparatus of continuous casting
JPS51150825A (en) Method of combining fundamental design material
JPS51116173A (en) Method of manufacturing isothermal crystal and apparatus therefor
JPS52103324A (en) Compound material of antiiabrasion and shockkresisting
JPS51115769A (en) Seniconductor compound and method of producucing single crystal thereof
JPS532455A (en) New derivatives of cyclobutaneprostaglandin and process for manufacture thereof
JPS5218757A (en) Compound and method of cohting
JPS52100433A (en) Novel derivatives of 22phenyll 22hydroxyethylamine and process for preparing same
JPS51149597A (en) Single crystal of ferroodielectric material and method of growth thereof