JPS5252185A - Pullluppgrowth of silicone crystals - Google Patents
Pullluppgrowth of silicone crystalsInfo
- Publication number
- JPS5252185A JPS5252185A JP51116085A JP11608576A JPS5252185A JP S5252185 A JPS5252185 A JP S5252185A JP 51116085 A JP51116085 A JP 51116085A JP 11608576 A JP11608576 A JP 11608576A JP S5252185 A JPS5252185 A JP S5252185A
- Authority
- JP
- Japan
- Prior art keywords
- pullluppgrowth
- crystals
- silicone
- silicone crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/916—Oxygen testing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/624,618 US4040895A (en) | 1975-10-22 | 1975-10-22 | Control of oxygen in silicon crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5252185A true JPS5252185A (en) | 1977-04-26 |
JPS5329677B2 JPS5329677B2 (en) | 1978-08-22 |
Family
ID=24502676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51116085A Granted JPS5252185A (en) | 1975-10-22 | 1976-09-29 | Pullluppgrowth of silicone crystals |
Country Status (7)
Country | Link |
---|---|
US (1) | US4040895A (en) |
JP (1) | JPS5252185A (en) |
CA (1) | CA1067800A (en) |
DE (1) | DE2639707C2 (en) |
FR (1) | FR2328509A1 (en) |
GB (1) | GB1519725A (en) |
IT (1) | IT1068285B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5494478A (en) * | 1977-12-30 | 1979-07-26 | Wacker Chemitronic | Manufacture of high purity silicon single crystal |
JPH0532480A (en) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | Method for growing crystal |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
EP0042901B1 (en) * | 1980-06-26 | 1984-10-31 | International Business Machines Corporation | Process for controlling the oxygen content of silicon ingots pulled by the czochralski method |
EP0055619B1 (en) * | 1980-12-29 | 1985-05-29 | Monsanto Company | Method for regulating concentration and distribution of oxygen in czochralski grown silicon |
US4511428A (en) * | 1982-07-09 | 1985-04-16 | International Business Machines Corporation | Method of controlling oxygen content and distribution in grown silicon crystals |
US4545849A (en) * | 1983-03-03 | 1985-10-08 | Motorola Inc. | Method for control of oxygen in silicon crystals |
US4659423A (en) * | 1986-04-28 | 1987-04-21 | International Business Machines Corporation | Semiconductor crystal growth via variable melt rotation |
US5215620A (en) * | 1989-09-19 | 1993-06-01 | Shin-Etsu Handotai Co. Ltd. | Method for pulling a silicon single crystal by imposing a periodic rotation rate on a constant rotation rate |
JPH0699223B2 (en) * | 1989-09-19 | 1994-12-07 | 信越半導体株式会社 | Silicon single crystal pulling method |
JPH0777999B2 (en) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | Method for growing antimony-doped single crystal silicon |
US5135218A (en) * | 1990-12-21 | 1992-08-04 | Mcgovern James R | Pool game table |
EP0668613A1 (en) * | 1993-09-09 | 1995-08-23 | Soviet-German Joint Venture "Mamt" | Method of determining the concentration of oxygen in silicon crystals |
US5474020A (en) * | 1994-05-06 | 1995-12-12 | Texas Instruments Incorporated | Oxygen precipitation control in czochralski-grown silicon cyrstals |
US5820672A (en) * | 1994-05-09 | 1998-10-13 | Texas Instruments Incorporated | OISF control in czochralski-grown crystals |
US5593498A (en) * | 1995-06-09 | 1997-01-14 | Memc Electronic Materials, Inc. | Apparatus for rotating a crucible of a crystal pulling machine |
US5795381A (en) * | 1996-09-09 | 1998-08-18 | Memc Electrical Materials, Inc. | SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon |
EP0879903B1 (en) | 1997-05-21 | 2001-12-12 | Shin-Etsu Handotai Company Limited | Silicon seed crystal, method of manufacturing the same, and method of manufacturing a silicon monocrystal through use of the seed crystal |
US5911825A (en) * | 1997-09-30 | 1999-06-15 | Seh America, Inc. | Low oxygen heater |
EP0947611A3 (en) * | 1998-03-17 | 2002-03-20 | Shin-Etsu Handotai Company Limited | A method for producing a silicon single crystal and the silicon single crystal produced thereby |
KR100764394B1 (en) | 2002-11-12 | 2007-10-05 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | Process for preparing single crystal silicon using crucible rotation to control temperature gradient |
CN101935871A (en) * | 2010-09-04 | 2011-01-05 | 山西天能科技有限公司 | Method for reducing dislocation of monocrystalline silicon |
CN102011178B (en) * | 2010-12-30 | 2012-10-03 | 宁晋晶兴电子材料有限公司 | Production method capable of reducing internal air holes of monocrystalline silicon |
CN107268080B (en) * | 2017-07-06 | 2019-08-02 | 锦州神工半导体股份有限公司 | A kind of pulling growth method of the major diameter without double ridge monocrystalline silicon |
CN109576785A (en) * | 2018-12-29 | 2019-04-05 | 徐州鑫晶半导体科技有限公司 | The method of oxygen content during adjusting monocrystalline silicon growing |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3353914A (en) * | 1964-12-30 | 1967-11-21 | Martin Marietta Corp | Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof |
NL145151B (en) * | 1965-08-05 | 1975-03-17 | Tno | METHOD AND EQUIPMENT FOR ZONE MELTES. |
US3873463A (en) * | 1972-02-23 | 1975-03-25 | Philips Corp | Method of and device for manufacturing substituted single crystals |
US3929557A (en) * | 1973-06-11 | 1975-12-30 | Us Air Force | Periodically and alternately accelerating and decelerating rotation rate of a feed crystal |
-
1975
- 1975-10-22 US US05/624,618 patent/US4040895A/en not_active Expired - Lifetime
-
1976
- 1976-07-28 FR FR7623756A patent/FR2328509A1/en active Granted
- 1976-09-03 DE DE2639707A patent/DE2639707C2/en not_active Expired
- 1976-09-16 GB GB38428/76A patent/GB1519725A/en not_active Expired
- 1976-09-17 IT IT27309/76A patent/IT1068285B/en active
- 1976-09-29 JP JP51116085A patent/JPS5252185A/en active Granted
- 1976-10-20 CA CA263,823A patent/CA1067800A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5494478A (en) * | 1977-12-30 | 1979-07-26 | Wacker Chemitronic | Manufacture of high purity silicon single crystal |
JPS5727077B2 (en) * | 1977-12-30 | 1982-06-08 | ||
JPH0532480A (en) * | 1991-02-20 | 1993-02-09 | Sumitomo Metal Ind Ltd | Method for growing crystal |
Also Published As
Publication number | Publication date |
---|---|
FR2328509A1 (en) | 1977-05-20 |
DE2639707A1 (en) | 1977-04-28 |
US4040895A (en) | 1977-08-09 |
GB1519725A (en) | 1978-08-02 |
IT1068285B (en) | 1985-03-21 |
DE2639707C2 (en) | 1983-08-18 |
FR2328509B1 (en) | 1979-07-06 |
CA1067800A (en) | 1979-12-11 |
JPS5329677B2 (en) | 1978-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5252185A (en) | Pullluppgrowth of silicone crystals | |
GB1539244A (en) | Manufacture of silicon crystals | |
JPS51117199A (en) | Method of making single crystal | |
JPS5453684A (en) | Treatment of single crystal | |
JPS5283331A (en) | Nnthiolcarbonyl derivatives of nnphosphonomethylglycin | |
GB1554283A (en) | Treatment of glass | |
JPS51136772A (en) | Preparation of high ciss1*44polybutadiene | |
JPS51149181A (en) | Pullluppgrowth of single crystal materials | |
JPS5251353A (en) | Novel homologue of natural prostagladine | |
JPS51115427A (en) | Preparation of ethylbenzole | |
JPS5251330A (en) | Preparation of trichloromethyll trifluoromethyllbenzene | |
JPS51131836A (en) | Preparation of acetoacetylarylamide | |
EG12225A (en) | Protective material made of crystals | |
JPS51130521A (en) | Stabilisation of redused betaanicotineamideeadenineedinucleotide | |
JPS51112919A (en) | Manufacture of gammaamodified polyamidee66filament | |
JPS51151299A (en) | Method of making single crystal galliumnitride | |
JPS51146860A (en) | Side of clock | |
IL49686A0 (en) | Preparation of 3-phenoxybenzaldehydes | |
JPS5259118A (en) | Preparation of trichloromethyll trifluoromethyllbenzene | |
JPS5259119A (en) | Preparation of trichloromethyll trifluoromethyllbenzene | |
IL50634A0 (en) | Preparation of 2-amino-1-alcohols | |
JPS5253069A (en) | Manufacture of heattresistant sheettlike substance | |
JPS5273832A (en) | Preparation of halogennitrobenzole | |
IL50150A0 (en) | Preparation of 3-methoxymethyl-cephalosporins | |
NZ181026A (en) | Preparation of n-oxazol-2-ylcarboxamides |