JPS51151299A - Method of making single crystal galliumnitride - Google Patents

Method of making single crystal galliumnitride

Info

Publication number
JPS51151299A
JPS51151299A JP6721176A JP6721176A JPS51151299A JP S51151299 A JPS51151299 A JP S51151299A JP 6721176 A JP6721176 A JP 6721176A JP 6721176 A JP6721176 A JP 6721176A JP S51151299 A JPS51151299 A JP S51151299A
Authority
JP
Japan
Prior art keywords
galliumnitride
single crystal
making single
making
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6721176A
Other languages
Japanese (ja)
Inventor
Fuiritsupu Arai Jiyan
Madaa Rooran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS51151299A publication Critical patent/JPS51151299A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP6721176A 1975-06-13 1976-06-10 Method of making single crystal galliumnitride Pending JPS51151299A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7518581A FR2313976A1 (en) 1975-06-13 1975-06-13 PROCESS FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALS AND SINGLE CRYSTALS OBTAINED BY IMPLEMENTING THIS PROCESS

Publications (1)

Publication Number Publication Date
JPS51151299A true JPS51151299A (en) 1976-12-25

Family

ID=9156506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6721176A Pending JPS51151299A (en) 1975-06-13 1976-06-10 Method of making single crystal galliumnitride

Country Status (4)

Country Link
JP (1) JPS51151299A (en)
DE (1) DE2624958C3 (en)
FR (1) FR2313976A1 (en)
GB (1) GB1551403A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999034037A1 (en) * 1997-12-25 1999-07-08 Japan Energy Corporation Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
JP2006083055A (en) * 2004-08-20 2006-03-30 Mitsubishi Chemicals Corp Metal nitride and method for producing metal nitride
WO2010007983A1 (en) * 2008-07-16 2010-01-21 住友電気工業株式会社 Method for growing gan crystal
JP2011073968A (en) * 1999-06-09 2011-04-14 Ricoh Co Ltd Apparatus for producing crystal

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL173917B1 (en) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Method of obtaining a crystalline lamellar structure
WO1997013891A1 (en) * 1995-10-13 1997-04-17 Centrum Badan Wysokocisnieniowych METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES
PL186905B1 (en) 1997-06-05 2004-03-31 Cantrum Badan Wysokocisnieniow Method of producing high-resistance volumetric gan crystals
TW519551B (en) * 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999034037A1 (en) * 1997-12-25 1999-07-08 Japan Energy Corporation Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors
JP2011073968A (en) * 1999-06-09 2011-04-14 Ricoh Co Ltd Apparatus for producing crystal
JP2013227221A (en) * 1999-06-09 2013-11-07 Ricoh Co Ltd Method for producing crystal of group iii nitride
JP2006083055A (en) * 2004-08-20 2006-03-30 Mitsubishi Chemicals Corp Metal nitride and method for producing metal nitride
WO2010007983A1 (en) * 2008-07-16 2010-01-21 住友電気工業株式会社 Method for growing gan crystal
JP2010042976A (en) * 2008-07-16 2010-02-25 Sumitomo Electric Ind Ltd METHOD FOR GROWING GaN CRYSTAL

Also Published As

Publication number Publication date
GB1551403A (en) 1979-08-30
FR2313976A1 (en) 1977-01-07
DE2624958C3 (en) 1980-09-25
DE2624958A1 (en) 1976-12-23
DE2624958B2 (en) 1980-01-31

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